Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102585) > Сторінка 115 з 1710
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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PTZTE254.7A | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PTZTE254.7B | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 4.9 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PTZTE255.1A | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PTZTE256.2A | Rohm Semiconductor |
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товару немає в наявності |
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PTZTE256.2B | Rohm Semiconductor |
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на замовлення 3005 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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PTZTE256.8A | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PTZTE257.5B | Rohm Semiconductor |
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товару немає в наявності |
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PTZTE258.2A | Rohm Semiconductor |
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на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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PTZTE259.1A | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PTZTE259.1B | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Voltage - Zener (Nom) (Vz): 9.8 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: PMDS Power - Max: 1 W Current - Reverse Leakage @ Vr: 20 µA @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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QS6K1TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.25W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RB060L-40TE25 | Rohm Semiconductor |
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на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||
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RB160L-60TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 1A PMDS Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDS Operating Temperature - Junction: 150°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB421DT146 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SMD3 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB441Q-40T-77 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB450FT106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB451FT106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RB461FT106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 700mA Supplier Device Package: UMD3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA Current - Reverse Leakage @ Vr: 200 µA @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB495DT146 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB520G-30T2R | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-723 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: VMD2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB551V-30TE-17 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 500mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA Current - Reverse Leakage @ Vr: 100 µA @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RB721Q-40T-77 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RHU002N06T106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Power Dissipation (Max): 200mW (Ta) Supplier Device Package: UMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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RK3055ETL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 4A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RK7002AT116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SST3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RLS-73TE-11 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz Current - Average Rectified (Io): 130mA Supplier Device Package: LLDS Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RN142STE61 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz Resistance @ If, F: 2Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 60V Supplier Device Package: EMD2 Current - Max: 100 mA Power Dissipation (Max): 150 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RN739FT106 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 125°C (TJ) Capacitance @ Vr, F: 0.4pF @ 35V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: UMD3 Current - Max: 50 mA Power Dissipation (Max): 100 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSA6.1ENTR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Applications: General Purpose Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: UMD5 Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.1V Power - Peak Pulse: 200W Power Line Protection: No |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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RSB6.8STE61 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSQ025P03TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSQ030P03TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSQ035P03TR | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSR025N03TL | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RSS050P03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS065N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS075P03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS090N03FU6TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS090P03TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS100N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS105N03TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS110N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
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В кошику од. на суму грн. | ||||||
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RSS120N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V |
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В кошику од. на суму грн. | ||||||
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RSS125N03TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSS140N03TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 14A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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RSX101VA-30TR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SM6K2T110 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: SMT6 |
на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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SP8J1TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8J2TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8J4TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8J5TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8K1TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8K2TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8K3TB | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SP8K5TB | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SST6838T216 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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SSTA56T116 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STZ5.6NT146 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SMD3 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STZ6.2NT146 | Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: SMD3 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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STZ6.8TT146 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. |
PTZTE254.7A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.7V 1W PMDS
Description: DIODE ZENER 4.7V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
PTZTE254.7B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 4.9V 1W PMDS
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Description: DIODE ZENER 4.9V 1W PMDS
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 4.9 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
товару немає в наявності
В кошику
од. на суму грн.
PTZTE255.1A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 1W PMDS
Description: DIODE ZENER 5.1V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
PTZTE256.2A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 1W PMDS
Description: DIODE ZENER 6.2V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
PTZTE256.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.5V 1W PMDS
Description: DIODE ZENER 6.5V 1W PMDS
на замовлення 3005 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PTZTE256.8A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 1W PMDS
Description: DIODE ZENER 6.8V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
PTZTE257.5B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.9V 1W PMDS
Description: DIODE ZENER 7.9V 1W PMDS
товару немає в наявності
В кошику
од. на суму грн.
PTZTE258.2A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.2V 1W PMDS
Description: DIODE ZENER 8.2V 1W PMDS
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PTZTE259.1A |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.1V 1W PMDS
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Description: DIODE ZENER 9.1V 1W PMDS
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
PTZTE259.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.8V 1W PMDS
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.8 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
Description: DIODE ZENER 9.8V 1W PMDS
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.8 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: PMDS
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 20 µA @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
QS6K1TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Description: MOSFET 2N-CH 30V 1A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1A
Input Capacitance (Ciss) (Max) @ Vds: 77pF @ 10V
Rds On (Max) @ Id, Vgs: 238mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.4nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.43 грн |
6000+ | 16.82 грн |
RB060L-40TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Description: DIODE SCHOTTKY 40V 2A PMDS
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RB160L-60TE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 1A PMDS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDS
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
RB421DT146 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA SMD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA SMD3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RB441Q-40T-77 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA MSD
Description: DIODE SCHOTTKY 40V 100MA MSD
товару немає в наявності
В кошику
од. на суму грн.
RB450FT106 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.93 грн |
RB451FT106 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.58 грн |
6000+ | 9.40 грн |
RB461FT106 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Description: DIODE SCHOTTKY 20V 700MA UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 700mA
Supplier Device Package: UMD3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.94 грн |
RB495DT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 25V SMD3
Description: DIODE ARRAY SCHOTTKY 25V SMD3
товару немає в наявності
В кошику
од. на суму грн.
RB520G-30T2R |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 100MA VMD2
Packaging: Tape & Reel (TR)
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE SCHOTTKY 30V 100MA VMD2
Packaging: Tape & Reel (TR)
Package / Case: SOD-723
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: VMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RB551V-30TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
Description: DIODE SCHOTTKY 20V 500MA UMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 500 mA
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
RB721Q-40T-77 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 30MA MSD
Description: DIODE SCHOTTKY 40V 30MA MSD
товару немає в наявності
В кошику
од. на суму грн.
RHU002N06T106 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
Description: MOSFET N-CH 60V 200MA UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Power Dissipation (Max): 200mW (Ta)
Supplier Device Package: UMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.63 грн |
6000+ | 4.89 грн |
9000+ | 4.62 грн |
RK3055ETL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
Description: MOSFET N-CH 60V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
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RK7002AT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 300MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SST3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
Description: MOSFET N-CH 60V 300MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SST3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 10 V
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RLS-73TE-11 |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 80V 130MA LLDS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 130mA
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE GEN PURP 80V 130MA LLDS
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0.5V, 1MHz
Current - Average Rectified (Io): 130mA
Supplier Device Package: LLDS
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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RN142STE61 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 60V 150MW EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: EMD2
Current - Max: 100 mA
Power Dissipation (Max): 150 mW
Description: RF DIODE PIN 60V 150MW EMD2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 60V
Supplier Device Package: EMD2
Current - Max: 100 mA
Power Dissipation (Max): 150 mW
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RN739FT106 |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 50V 100MW UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 35V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: UMD3
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
Description: RF DIODE PIN 50V 100MW UMD3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 0.4pF @ 35V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: UMD3
Current - Max: 50 mA
Power Dissipation (Max): 100 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.59 грн |
RSA6.1ENTR |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3VWM UMD5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: UMD5
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Description: TVS DIODE 3VWM UMD5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: UMD5
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 200W
Power Line Protection: No
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.97 грн |
RSB6.8STE61 |
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Виробник: Rohm Semiconductor
Description: TVS DIODE 3.5VWM EMD2
Description: TVS DIODE 3.5VWM EMD2
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RSQ025P03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
Description: MOSFET P-CH 30V 2.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
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RSQ030P03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Description: MOSFET P-CH 30V 3A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
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RSQ035P03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
Description: MOSFET P-CH 30V 3.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 10 V
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RSR025N03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Description: MOSFET N-CH 30V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.92 грн |
RSS050P03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 10 V
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RSS065N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
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RSS075P03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
Description: MOSFET P-CH 30V 7.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 10 V
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RSS090N03FU6TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Description: MOSFET N-CH 30V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
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RSS090P03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A 8-SOIC
Description: MOSFET P-CH 30V 9A 8-SOIC
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RSS100N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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RSS105N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10.5A 8-SOIC
Description: MOSFET N-CH 30V 10.5A 8-SOIC
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RSS110N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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RSS120N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
Description: MOSFET N-CH 30V 12A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 10 V
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RSS125N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8-SOIC
Description: MOSFET N-CH 30V 12.5A 8-SOIC
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RSS140N03TB |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 10 V
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 14A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 10 V
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RSX101VA-30TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 1A TUMD2
Description: DIODE SCHOTTKY 30V 1A TUMD2
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SM6K2T110 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.2A SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT6
Description: MOSFET 2N-CH 60V 0.2A SMT6
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 10V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: SMT6
на замовлення 4963 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.10 грн |
SP8J1TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 5A 8-SOIC
Description: MOSFET 2P-CH 30V 5A 8-SOIC
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SP8J2TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4.5A 8-SOIC
Description: MOSFET 2P-CH 30V 4.5A 8-SOIC
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SP8J4TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 2A 8-SOIC
Description: MOSFET 2P-CH 30V 2A 8-SOIC
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SP8J5TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 7A 8-SOIC
Description: MOSFET 2P-CH 30V 7A 8-SOIC
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SP8K1TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A 8-SOIC
Description: MOSFET 2N-CH 30V 5A 8-SOIC
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SP8K2TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K3TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SP8K5TB |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
Description: MOSFET 2N-CH 30V 3.5A 8-SOIC
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SST6838T216 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 40V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Description: TRANS NPN 40V 0.2A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 5V
Frequency - Transition: 180MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
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SSTA56T116 |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 80V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Description: TRANS PNP 80V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 9.87 грн |
STZ5.6NT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SMD3
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER ARRAY 5.6V SMD3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SMD3
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 14.98 грн |
STZ6.2NT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.2V SMD3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SMD3
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER ARRAY 6.2V SMD3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SMD3
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 15.07 грн |
6000+ | 13.78 грн |
9000+ | 12.79 грн |
STZ6.8TT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V SMD3
Description: DIODE ZENER ARRAY 6.8V SMD3
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