Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102213) > Сторінка 110 з 1704

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DTC144TKAT146 DTC144TKAT146 Rohm Semiconductor dtc144te.pdf Description: TRANS PREBIAS NPN 200MW SMT3
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DTC144TSATP DTC144TSATP Rohm Semiconductor DTC144TE,TKA,TM,TSA,TUA.pdf Description: TRANS PREBIAS NPN 300MW SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTC144TUAT106 DTC144TUAT106 Rohm Semiconductor datasheet?p=DTC144TUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.64 грн
Мінімальне замовлення: 3000
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DTC144VKAT146 DTC144VKAT146 Rohm Semiconductor datasheet?p=DTC144VKA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC144VUAT106 DTC144VUAT106 Rohm Semiconductor dtc144v.pdf Description: TRANS PREBIAS NPN 200MW UMT3
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DTC144WETL DTC144WETL Rohm Semiconductor DTC144WKA Description: TRANS PREBIAS NPN 150MW EMT3
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DTC144WUAT106 DTC144WUAT106 Rohm Semiconductor datasheet?p=DTC144WUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTC314TKT146 DTC314TKT146 Rohm Semiconductor DTC314TK,TU.pdf Description: TRANS PREBIAS NPN 200MW SMT3
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DTC314TUT106 DTC314TUT106 Rohm Semiconductor DTC314TK,TU.pdf Description: TRANS PREBIAS NPN 200MW UMT3
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DTC323TUT106 DTC323TUT106 Rohm Semiconductor DTC323TU(TK,TS), DTC343TK,TS.pdf Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
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DTC343TKT146 DTC343TKT146 Rohm Semiconductor datasheet?p=DTC343TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 15V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
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DTC363EKT146 DTC363EKT146 Rohm Semiconductor datasheet?p=DTC363EK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 6.8 kOhms
Resistor - Emitter Base (R2): 6.8 kOhms
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DTC363EUT106 DTC363EUT106 Rohm Semiconductor DTC363Ex.pdf Description: TRANS PREBIAS NPN 20V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 6.8 kOhms
Resistor - Emitter Base (R2): 6.8 kOhms
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DTC363TKT146 DTC363TKT146 Rohm Semiconductor DTC363TK,TS.pdf Description: TRANS PREBIAS NPN 15V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 6.8 kOhms
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DTD113EKT146 DTD113EKT146 Rohm Semiconductor datasheet?p=DTD113EK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTD113ZUT106 DTD113ZUT106 Rohm Semiconductor datasheet?p=DTD113ZU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTD114ESTP DTD114ESTP Rohm Semiconductor dtd114ek.pdf Description: TRANS PREBIAS NPN 50V 0.5A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD114GKT146 DTD114GKT146 Rohm Semiconductor datasheet?p=DTD114GK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.06 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTD122JKT146 DTD122JKT146 Rohm Semiconductor DTD122JK.pdf Description: TRANS PREBIAS NPN 200MW SMT3
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DTD123EKT146 DTD123EKT146 Rohm Semiconductor datasheet?p=DTD123EK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+9.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTD123TKT146 DTD123TKT146 Rohm Semiconductor datasheet?p=DTD123TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+12.13 грн
6000+10.67 грн
9000+10.16 грн
Мінімальне замовлення: 3000
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DTD133HKT146 DTD133HKT146 Rohm Semiconductor DTD133H.pdf Description: TRANS PREBIAS NPN 200MW SMT3
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DTD143TKT146 DTD143TKT146 Rohm Semiconductor datasheet?p=DTD143TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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EDZTE615.1B EDZTE615.1B Rohm Semiconductor datasheet?p=EDZ5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.1V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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EDZTE615.6B EDZTE615.6B Rohm Semiconductor datasheet?p=EDZ5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 5.6V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
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EDZTE616.2B EDZTE616.2B Rohm Semiconductor Description: DIODE ZENER 6.2V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: EMD2
Part Status: Obsolete
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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EDZTE616.8B EDZTE616.8B Rohm Semiconductor datasheet?p=EDZ6.8B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: DIODE ZENER 6.8V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: EMD2
Part Status: Obsolete
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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EM6K1T2R EM6K1T2R Rohm Semiconductor EM6K1_RevC.pdf Description: MOSFET 2N-CH 30V 0.1A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: EMT6
Part Status: Not For New Designs
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+10.91 грн
16000+9.73 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMA2T2R EMA2T2R Rohm Semiconductor ema2t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT5
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EMA4T2R EMA4T2R Rohm Semiconductor ema4t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT5
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EMB10T2R EMB10T2R Rohm Semiconductor datasheet?p=EMB10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+7.67 грн
16000+6.65 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMB11T2R EMB11T2R Rohm Semiconductor datasheet?p=EMB11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+7.68 грн
16000+6.66 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMB2T2R EMB2T2R Rohm Semiconductor emb2t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
товару немає в наявності
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EMB3T2R EMB3T2R Rohm Semiconductor emb3t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
EMB4T2R EMB4T2R Rohm Semiconductor emb3t2r-e.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
товару немає в наявності
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EMB6T2R EMB6T2R Rohm Semiconductor datasheet?p=EMB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS 2PNP 50V 30MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMB9T2R EMB9T2R Rohm Semiconductor EMB9,%20IMB9A,UMB9N.pdf Description: TRANS 2PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMD12T2R EMD12T2R Rohm Semiconductor datasheet?p=EMD12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMD2T2R EMD2T2R Rohm Semiconductor emd2t2r-e.pdf Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMD3T2R EMD3T2R Rohm Semiconductor emd3t2r-e.pdf Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMD6T2R EMD6T2R Rohm Semiconductor datasheet?p=EMD6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
8000+7.68 грн
16000+6.66 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMD9T2R EMD9T2R Rohm Semiconductor datasheet?p=EMD9&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMF21T2R EMF21T2R Rohm Semiconductor EMF21.pdf Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMF22T2R EMF22T2R Rohm Semiconductor EMF22,%20UMF22N.pdf Description: TRANS NPN PREBIAS/NPN 0.15W EMT6
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В кошику  од. на суму  грн.
EMF5T2R EMF5T2R Rohm Semiconductor datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+10.32 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMG2T2R EMG2T2R Rohm Semiconductor datasheet?p=EMG2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
Part Status: Active
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EMH10T2R EMH10T2R Rohm Semiconductor datasheet?p=EMH10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
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EMH11T2R EMH11T2R Rohm Semiconductor datasheet?p=EMH11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
8000+7.67 грн
16000+6.65 грн
24000+6.55 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMH1T2R EMH1T2R Rohm Semiconductor emh1t2r-e.pdf Description: TRANS 2NPN PREBIAS 0.15W EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMH2T2R EMH2T2R Rohm Semiconductor datasheet?p=EMH2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
8000+7.68 грн
16000+6.66 грн
24000+6.56 грн
56000+5.79 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMH3T2R EMH3T2R Rohm Semiconductor datasheet?p=EMH3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
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В кошику  од. на суму  грн.
EMH4T2R EMH4T2R Rohm Semiconductor datasheet?p=EMH4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: EMT6
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EMH9T2R EMH9T2R Rohm Semiconductor datasheet?p=EMH9&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+10.32 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMT1T2R EMT1T2R Rohm Semiconductor datasheet?p=EMT1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP 50V 0.15A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT6
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
8000+5.49 грн
16000+5.14 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMT2T2R EMT2T2R Rohm Semiconductor datasheet?p=EMT2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2PNP 50V 0.15A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT6
Part Status: Not For New Designs
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EMT3T2R EMT3T2R Rohm Semiconductor emt3.pdf Description: TRANS 2PNP 50V 0.15A 6EMT
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EMX18T2R EMX18T2R Rohm Semiconductor datasheet?p=EMX18&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN DUAL 12V 500MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: EMT6
Part Status: Active
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EMX1T2R EMX1T2R Rohm Semiconductor datasheet?p=EMX1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN DUAL 50V 150MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT6
Part Status: Active
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
8000+7.52 грн
16000+6.66 грн
24000+6.36 грн
40000+5.66 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMX2T2R EMX2T2R Rohm Semiconductor datasheet?p=EMX2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN 50V 0.15A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT6
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EMX4T2R EMX4T2R Rohm Semiconductor datasheet?p=EMX4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN 20V 0.05A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 1.5GHz
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+15.43 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
DTC144TKAT146 dtc144te.pdf
DTC144TKAT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
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DTC144TSATP DTC144TE,TKA,TM,TSA,TUA.pdf
DTC144TSATP
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 300MW SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: SPT
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
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DTC144TUAT106 datasheet?p=DTC144TUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144TUAT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.64 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTC144VKAT146 datasheet?p=DTC144VKA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144VKAT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTC144VUAT106 dtc144v.pdf
DTC144VUAT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
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DTC144WETL DTC144WKA
DTC144WETL
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 150MW EMT3
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DTC144WUAT106 datasheet?p=DTC144WUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144WUAT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
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DTC314TKT146 DTC314TK,TU.pdf
DTC314TKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
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DTC314TUT106 DTC314TK,TU.pdf
DTC314TUT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
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DTC323TUT106 DTC323TU(TK,TS), DTC343TK,TS.pdf
DTC323TUT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
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DTC343TKT146 datasheet?p=DTC343TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC343TKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 15V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
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DTC363EKT146 datasheet?p=DTC363EK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC363EKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 6.8 kOhms
Resistor - Emitter Base (R2): 6.8 kOhms
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DTC363EUT106 DTC363Ex.pdf
DTC363EUT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Supplier Device Package: UMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 6.8 kOhms
Resistor - Emitter Base (R2): 6.8 kOhms
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DTC363TKT146 DTC363TK,TS.pdf
DTC363TKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 15V 0.6A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 6.8 kOhms
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DTD113EKT146 datasheet?p=DTD113EK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD113EKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Resistors Included: R1 and R2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTD113ZUT106 datasheet?p=DTD113ZU&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD113ZUT106
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
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DTD114ESTP dtd114ek.pdf
DTD114ESTP
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SPT
Packaging: Tape & Box (TB)
Package / Case: SC-72 Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 300 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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DTD114GKT146 datasheet?p=DTD114GK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD114GKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.06 грн
Мінімальне замовлення: 3000
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DTD122JKT146 DTD122JK.pdf
DTD122JKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
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DTD123EKT146 datasheet?p=DTD123EK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD123EKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTD123TKT146 datasheet?p=DTD123TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD123TKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistors Included: R1 Only
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.13 грн
6000+10.67 грн
9000+10.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTD133HKT146 DTD133H.pdf
DTD133HKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW SMT3
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DTD143TKT146 datasheet?p=DTD143TK&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTD143TKT146
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 40V 0.5A SMT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
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EDZTE615.1B datasheet?p=EDZ5.1B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZTE615.1B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
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EDZTE615.6B datasheet?p=EDZ5.6B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZTE615.6B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
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EDZTE616.2B
EDZTE616.2B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: EMD2
Part Status: Obsolete
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
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EDZTE616.8B datasheet?p=EDZ6.8B&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EDZTE616.8B
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 150MW EMD2
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: EMD2
Part Status: Obsolete
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
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EM6K1T2R EM6K1_RevC.pdf
EM6K1T2R
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 0.1A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 100mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 5V
Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: EMT6
Part Status: Not For New Designs
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+10.91 грн
16000+9.73 грн
Мінімальне замовлення: 8000
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EMA2T2R ema2t2r-e.pdf
EMA2T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT5
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EMA4T2R ema4t2r-e.pdf
EMA4T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT5
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EMB10T2R datasheet?p=EMB10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMB10T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+7.67 грн
16000+6.65 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMB11T2R datasheet?p=EMB11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMB11T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+7.68 грн
16000+6.66 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMB2T2R emb2t2r-e.pdf
EMB2T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMB3T2R emb3t2r-e.pdf
EMB3T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
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EMB4T2R emb3t2r-e.pdf
EMB4T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMB6T2R datasheet?p=EMB6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMB6T2R
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS 2PNP 50V 30MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMB9T2R EMB9,%20IMB9A,UMB9N.pdf
EMB9T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
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EMD12T2R datasheet?p=EMD12&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD12T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMD2T2R emd2t2r-e.pdf
EMD2T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
товару немає в наявності
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EMD3T2R emd3t2r-e.pdf
EMD3T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
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EMD6T2R datasheet?p=EMD6&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD6T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+7.68 грн
16000+6.66 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMD9T2R datasheet?p=EMD9&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMD9T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
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EMF21T2R EMF21.pdf
EMF21T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
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EMF22T2R EMF22,%20UMF22N.pdf
EMF22T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/NPN 0.15W EMT6
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EMF5T2R datasheet?p=EMF5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMF5T2R
Виробник: Rohm Semiconductor
Description: TRANS NPN PREBIAS/PNP 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Frequency - Transition: 250MHz, 260MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+10.32 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMG2T2R datasheet?p=EMG2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMG2T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
EMH10T2R datasheet?p=EMH10&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH10T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: EMT6
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EMH11T2R datasheet?p=EMH11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH11T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: EMT6
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+7.67 грн
16000+6.65 грн
24000+6.55 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMH1T2R emh1t2r-e.pdf
EMH1T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMH2T2R datasheet?p=EMH2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH2T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+7.68 грн
16000+6.66 грн
24000+6.56 грн
56000+5.79 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMH3T2R datasheet?p=EMH3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH3T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: EMT6
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EMH4T2R datasheet?p=EMH4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH4T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: EMT6
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EMH9T2R datasheet?p=EMH9&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMH9T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+10.32 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMT1T2R datasheet?p=EMT1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMT1T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT6
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+5.49 грн
16000+5.14 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMT2T2R datasheet?p=EMT2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMT2T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 140MHz
Supplier Device Package: EMT6
Part Status: Not For New Designs
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EMT3T2R emt3.pdf
EMT3T2R
Виробник: Rohm Semiconductor
Description: TRANS 2PNP 50V 0.15A 6EMT
товару немає в наявності
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EMX18T2R datasheet?p=EMX18&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX18T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 12V 500MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Frequency - Transition: 320MHz
Supplier Device Package: EMT6
Part Status: Active
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EMX1T2R datasheet?p=EMX1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX1T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN DUAL 50V 150MA EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT6
Part Status: Active
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+7.52 грн
16000+6.66 грн
24000+6.36 грн
40000+5.66 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
EMX2T2R datasheet?p=EMX2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX2T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 50V 0.15A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT6
товару немає в наявності
В кошику  од. на суму  грн.
EMX4T2R datasheet?p=EMX4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
EMX4T2R
Виробник: Rohm Semiconductor
Description: TRANS 2NPN 20V 0.05A 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 20mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 10mA, 10V
Frequency - Transition: 1.5GHz
Supplier Device Package: EMT6
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+15.43 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
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