Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (98935) > Сторінка 1457 з 1649
| Фото | Назва | Виробник | Інформація |
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| QH8JA1TCR | ROHM SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 77mΩ Mounting: SMD Gate charge: 10.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8JB5TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 51mΩ Mounting: SMD Gate charge: 17.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8JC5TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 101mΩ Mounting: SMD Gate charge: 17.3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8K26TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 7A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±12V On-state resistance: 50mΩ Mounting: SMD Gate charge: 2.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QH8KA2TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8KA4TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 40A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±12V On-state resistance: 24mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QH8M22TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 40/-40V Drain current: 4.5/2A Pulsed drain current: 18A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 59/260mΩ Mounting: SMD Gate charge: 2.6/9.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8MA2TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.5/3A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 56/115mΩ Mounting: SMD Gate charge: 7.8/8.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8MA3TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/5.5A Pulsed drain current: 18A Power dissipation: 2.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 46/72mΩ Mounting: SMD Gate charge: 7.2/10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QH8MA4TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 9/8A Pulsed drain current: 18A Power dissipation: 2.6W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 23.7/40.3mΩ Mounting: SMD Gate charge: 15.5/19.6nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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QS5K2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25 Mounting: SMD Case: TSOT25 Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 2A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±12V Kind of package: reel; tape Semiconductor structure: common source On-state resistance: 154mΩ Pulsed drain current: 8A Power dissipation: 1.25W Gate charge: 2.8nC кількість в упаковці: 1 шт |
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QS5U12TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U13TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 0.9W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U16TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.5A Pulsed drain current: 2A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U17TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 30V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 154mΩ Mounting: SMD Gate charge: 2.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U21TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U23TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U26TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U27TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 4.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U28TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±12V On-state resistance: 245mΩ Mounting: SMD Gate charge: 4.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U33TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±20V On-state resistance: 0.225Ω Mounting: SMD Gate charge: 3.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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QS5U34TR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A Type of transistor: N-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.5A Pulsed drain current: 3A Power dissipation: 1.25W Case: TSOT25 Gate-source voltage: ±10V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS6J11TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A Pulsed drain current: -8A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 400mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS6J1TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 430mΩ Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS6K1FRATR | ROHM SEMICONDUCTOR |
QS6K1FRATR Multi channel transistors |
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| QS6K1TR | ROHM SEMICONDUCTOR |
QS6K1TR Multi channel transistors |
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| QS6K21FRATR | ROHM SEMICONDUCTOR |
QS6K21FRATR Multi channel transistors |
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| QS6K21TR | ROHM SEMICONDUCTOR |
QS6K21TR Multi channel transistors |
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| QS6M4TR | ROHM SEMICONDUCTOR |
QS6M4TR Multi channel transistors |
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| QS6U22TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.5A Pulsed drain current: -6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 3nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QS6U24TR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A Type of transistor: P-MOSFET + Schottky Polarisation: unipolar Drain-source voltage: -30V Drain current: -1A Pulsed drain current: -2A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 1.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| QS8J13TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -5.5A Pulsed drain current: -18A Power dissipation: 1.5W Case: TSMT8 On-state resistance: 58mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8J2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -12V Drain current: -4A Pulsed drain current: -12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±10V On-state resistance: 132mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8J4TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -4A Pulsed drain current: -16A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8J5TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -5A Pulsed drain current: -20A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 63mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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| QS8K11TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 12A Power dissipation: 1.5W Case: TSMT8 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 3.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 1 шт |
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| QS8K13TCR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6A Pulsed drain current: 18A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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| QS8M31TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/2A; Idm: 4÷6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 60/-60V Drain current: 3/2A Pulsed drain current: 4...6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 137/266mΩ Mounting: SMD Gate charge: 4/7.2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 1000 шт: термін постачання 7-14 дні (днів) |
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| QS8M51FRATR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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| QS8M51TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100/-100V Drain current: 2/1.5A Pulsed drain current: 6A Power dissipation: 1.5W Case: TSMD8 Gate-source voltage: ±20V On-state resistance: 355/540mΩ Mounting: SMD Gate charge: 4.7/17nC Kind of package: reel; tape Kind of channel: enhanced |
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QSH29TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 1.25W Case: SC74; SOT457 Current gain: 500 Mounting: SMD Kind of package: reel; tape Base-emitter resistor: 10kΩ кількість в упаковці: 1 шт |
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QST8TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 1.5A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz кількість в упаковці: 1 шт |
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QST9TR | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz кількість в упаковці: 1 шт |
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QSX8TR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 30V; 1A; 500mW; SC74,SOT457 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.5W Case: SC74; SOT457 Current gain: 270...680 Mounting: SMD Kind of package: reel; tape Frequency: 320MHz кількість в упаковці: 1 шт |
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| QSZ2TR | ROHM SEMICONDUCTOR |
QSZ2TR Complementary transistors |
на замовлення 2942 шт: термін постачання 7-14 дні (днів) |
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| R6002END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.7A Pulsed drain current: 4A Power dissipation: 26W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6003KND3TL1 | ROHM SEMICONDUCTOR |
R6003KND3TL1 SMD N channel transistors |
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| R6004END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 8A Power dissipation: 59W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.36Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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| R6004JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4A Pulsed drain current: 12A Power dissipation: 60W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.43Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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| R6006JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 86W Drain-source voltage: 600V Drain current: 6A On-state resistance: 936mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 15.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 18A кількість в упаковці: 2500 шт |
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| R6006KND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 70W Drain-source voltage: 600V Drain current: 6A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A кількість в упаковці: 2500 шт |
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| R6007END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: TO252 On-state resistance: 1.2Ω кількість в упаковці: 2500 шт |
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| R6007ENJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 14A Power dissipation: 78W Gate charge: 20nC Polarisation: unipolar Drain current: 7A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: D2PAK On-state resistance: 1.2Ω кількість в упаковці: 1 шт |
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| R6007JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252 Type of transistor: N-MOSFET Mounting: SMD Case: TO252 On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A кількість в упаковці: 2500 шт |
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| R6007JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK Type of transistor: N-MOSFET Mounting: SMD Case: D2PAK On-state resistance: 780mΩ Kind of package: reel; tape Power dissipation: 96W Polarisation: unipolar Gate charge: 17.5nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 600V Drain current: 7A кількість в упаковці: 1 шт |
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| R6009END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252 Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Mounting: SMD Case: TO252 кількість в упаковці: 2500 шт |
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| R6009JND3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252 Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 585mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 27A Mounting: SMD Case: TO252 кількість в упаковці: 2500 шт |
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| R6009JNJGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 585mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 22nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 27A Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
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| R6009KNJTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK Kind of package: reel; tape Drain-source voltage: 600V Drain current: 9A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 94W Polarisation: unipolar Gate charge: 16.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 27A Mounting: SMD Case: D2PAK кількість в упаковці: 1 шт |
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| R6011END3TL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252 Mounting: SMD Pulsed drain current: 22A Power dissipation: 124W Gate charge: 32nC Polarisation: unipolar Drain current: 11A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 720mΩ кількість в упаковці: 2500 шт |
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| QH8JA1TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -5A; Idm: -18A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 10.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8JB5TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 51mΩ
Mounting: SMD
Gate charge: 17.2nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8JC5TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -3.5A; Idm: -14A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 101mΩ
Mounting: SMD
Gate charge: 17.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8K26TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 7A; Idm: 18A; 2.6W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 2.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QH8KA2TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8KA4TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 9A; Idm: 40A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 40A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±12V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QH8M22TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 4.5/2A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 59/260mΩ
Mounting: SMD
Gate charge: 2.6/9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 4.5/2A; Idm: 18A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 40/-40V
Drain current: 4.5/2A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 59/260mΩ
Mounting: SMD
Gate charge: 2.6/9.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8MA2TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.5/3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56/115mΩ
Mounting: SMD
Gate charge: 7.8/8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4.5/3A; Idm: 12A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.5/3A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 56/115mΩ
Mounting: SMD
Gate charge: 7.8/8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8MA3TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/5.5A
Pulsed drain current: 18A
Power dissipation: 2.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 46/72mΩ
Mounting: SMD
Gate charge: 7.2/10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/5.5A; Idm: 18A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 7/5.5A
Pulsed drain current: 18A
Power dissipation: 2.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 46/72mΩ
Mounting: SMD
Gate charge: 7.2/10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QH8MA4TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 9/8A; Idm: 18A; 2.6W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 9/8A
Pulsed drain current: 18A
Power dissipation: 2.6W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 23.7/40.3mΩ
Mounting: SMD
Gate charge: 15.5/19.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QS5K2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSOT25
Mounting: SMD
Case: TSOT25
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 2A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±12V
Kind of package: reel; tape
Semiconductor structure: common source
On-state resistance: 154mΩ
Pulsed drain current: 8A
Power dissipation: 1.25W
Gate charge: 2.8nC
кількість в упаковці: 1 шт
товар відсутній
| QS5U12TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U13TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 900mW
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.9W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U16TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 500mA; Idm: 2A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.5A
Pulsed drain current: 2A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U17TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 30V; 2A; Idm: 8A; 1.25W
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 154mΩ
Mounting: SMD
Gate charge: 2.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U21TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U23TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U26TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U27TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 4.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U28TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±12V
On-state resistance: 245mΩ
Mounting: SMD
Gate charge: 4.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U33TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -2A; Idm: -8A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: SMD
Gate charge: 3.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS5U34TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; unipolar; 20V; 1.5A; Idm: 3A
Type of transistor: N-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.5A
Pulsed drain current: 3A
Power dissipation: 1.25W
Case: TSOT25
Gate-source voltage: ±10V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS6J11TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2A; Idm: -8A; 1.25W; TSMT6
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2A
Pulsed drain current: -8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 400mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS6J1TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -1.5A; Idm: -6A; 1.25W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 430mΩ
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS6U22TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -20V; -1.5A; Idm: -6A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QS6U24TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET + Schottky; unipolar; -30V; -1A; Idm: -2A
Type of transistor: P-MOSFET + Schottky
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1A
Pulsed drain current: -2A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 1.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| QS8J13TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -5.5A; Idm: -18A; 1.5W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -5.5A
Pulsed drain current: -18A
Power dissipation: 1.5W
Case: TSMT8
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8J2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4A
Pulsed drain current: -12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±10V
On-state resistance: 132mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8J4TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4A; Idm: -16A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8J5TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -5A; Idm: -20A; 1.5W; TSMT8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5A
Pulsed drain current: -20A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 3000 шт
товар відсутній
| QS8K11TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 3.5A; Idm: 12A; 1.5W; TSMT8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 12A
Power dissipation: 1.5W
Case: TSMT8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 1 шт
товар відсутній
| QS8K13TCR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6A; Idm: 18A; 1.5W; TSMD8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
| QS8M31TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 60/-60V; 3/2A; Idm: 4÷6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 3/2A
Pulsed drain current: 4...6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 137/266mΩ
Mounting: SMD
Gate charge: 4/7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 1000 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 73.71 грн |
| 8+ | 34.74 грн |
| 25+ | 30.12 грн |
| 42+ | 22.44 грн |
| 114+ | 21.16 грн |
| QS8M51FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| QS8M51TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| QSH29TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC74; SOT457
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 60V; 0.5A; 1.25W; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 1.25W
Case: SC74; SOT457
Current gain: 500
Mounting: SMD
Kind of package: reel; tape
Base-emitter resistor: 10kΩ
кількість в упаковці: 1 шт
товар відсутній
| QST8TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 1.5A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
кількість в упаковці: 1 шт
товар відсутній
| QST9TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
товар відсутній
| QSX8TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 1A; 500mW; SC74,SOT457
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 1A
Power dissipation: 0.5W
Case: SC74; SOT457
Current gain: 270...680
Mounting: SMD
Kind of package: reel; tape
Frequency: 320MHz
кількість в упаковці: 1 шт
товар відсутній
| QSZ2TR |
|
Виробник: ROHM SEMICONDUCTOR
QSZ2TR Complementary transistors
QSZ2TR Complementary transistors
на замовлення 2942 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.35 грн |
| 86+ | 11.65 грн |
| 235+ | 11.01 грн |
| R6002END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.7A
Pulsed drain current: 4A
Power dissipation: 26W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.7A; Idm: 4A; 26W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.7A
Pulsed drain current: 4A
Power dissipation: 26W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6004END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 8A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.36Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| R6004JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 12A; 60W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.43Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
| R6006JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 86W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 936mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 86W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 936mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
товар відсутній
| R6006KND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Power dissipation: 70W
Drain-source voltage: 600V
Drain current: 6A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
кількість в упаковці: 2500 шт
товар відсутній
| R6007END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; TO252
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: TO252
On-state resistance: 1.2Ω
кількість в упаковці: 2500 шт
товар відсутній
| R6007ENJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 14A; 78W; D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 14A
Power dissipation: 78W
Gate charge: 20nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: D2PAK
On-state resistance: 1.2Ω
кількість в упаковці: 1 шт
товар відсутній
| R6007JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; TO252
Type of transistor: N-MOSFET
Mounting: SMD
Case: TO252
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 2500 шт
товар відсутній
| R6007JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 96W; D2PAK
Type of transistor: N-MOSFET
Mounting: SMD
Case: D2PAK
On-state resistance: 780mΩ
Kind of package: reel; tape
Power dissipation: 96W
Polarisation: unipolar
Gate charge: 17.5nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 600V
Drain current: 7A
кількість в упаковці: 1 шт
товар відсутній
| R6009END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 18A; 94W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 18A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
товар відсутній
| R6009JND3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; TO252
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: TO252
кількість в упаковці: 2500 шт
товар відсутній
| R6009JNJGTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 125W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 585mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 22nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
товар відсутній
| R6009KNJTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9A; Idm: 27A; 94W; D2PAK
Kind of package: reel; tape
Drain-source voltage: 600V
Drain current: 9A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 94W
Polarisation: unipolar
Gate charge: 16.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 27A
Mounting: SMD
Case: D2PAK
кількість в упаковці: 1 шт
товар відсутній
| R6011END3TL1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 124W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
кількість в упаковці: 2500 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 22A; 124W; TO252
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 124W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 720mΩ
кількість в упаковці: 2500 шт
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