Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101691) > Сторінка 1690 з 1695

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R6042JNZ4C13 ROHM SEMICONDUCTOR datasheet?p=R6042JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 0.104Ω
Gate-source voltage: ±30V
Drain current: 42A
Pulsed drain current: 126A
Power dissipation: 495W
Drain-source voltage: 600V
Kind of channel: enhancement
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RSH070N05GZETB RSH070N05GZETB ROHM SEMICONDUCTOR rsh070n05-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
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RSH070N05TB1 RSH070N05TB1 ROHM SEMICONDUCTOR rsh070n05-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
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BU7232SF-E2 ROHM SEMICONDUCTOR bu7251g-e.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: SOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...105°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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BU7232F-E2 ROHM SEMICONDUCTOR bu7231g-e.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: SOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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BU7232FVM-TR ROHM SEMICONDUCTOR bu7251g-e.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; MSOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: MSOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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BU7232SFVM-TR ROHM SEMICONDUCTOR bu7251g-e.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; MSOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: MSOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...105°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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FMA4AT148 FMA4AT148 ROHM SEMICONDUCTOR datasheet?p=FMA4A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
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RB520CM-60T2R RB520CM-60T2R ROHM SEMICONDUCTOR datasheet?p=RB520CM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.47V
Leakage current: 3µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
на замовлення 6228 шт:
термін постачання 21-30 дні (днів)
25+17.09 грн
81+4.92 грн
100+4.05 грн
500+3.54 грн
503+1.86 грн
1382+1.76 грн
Мінімальне замовлення: 25
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RB520SM-30T2R RB520SM-30T2R ROHM SEMICONDUCTOR datasheet?p=RB520SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520VM-40FHTE-17 RB520VM-40FHTE-17 ROHM SEMICONDUCTOR datasheet?p=RB520VM-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520HS-30T15R ROHM SEMICONDUCTOR datasheet?p=RB520HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2,SOD962-2; SMD; 30V; 0.2A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: DSN0603-2; SOD962-2
Max. forward voltage: 0.43V
Leakage current: 0.3µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
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RB520CM-30T2R RB520CM-30T2R ROHM SEMICONDUCTOR datasheet?p=RB520CM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
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RB520CS-30FHT2RA RB520CS-30FHT2RA ROHM SEMICONDUCTOR datasheet?p=RB520CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
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RB520SM-40FHT2R RB520SM-40FHT2R ROHM SEMICONDUCTOR datasheet?p=RB520SM-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520VM-30FHTE-17 RB520VM-30FHTE-17 ROHM SEMICONDUCTOR datasheet?p=RB520VM-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520VM-40TE-17 RB520VM-40TE-17 ROHM SEMICONDUCTOR datasheet?p=RB520VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RF05VYM1SFHTR RF05VYM1SFHTR ROHM SEMICONDUCTOR datasheet?p=RF05VYM1SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
на замовлення 3289 шт:
термін постачання 21-30 дні (днів)
21+20.51 грн
27+14.92 грн
32+12.62 грн
51+7.90 грн
100+6.54 грн
217+4.31 грн
597+4.07 грн
3000+3.93 грн
Мінімальне замовлення: 21
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RF05VAM2STR RF05VAM2STR ROHM SEMICONDUCTOR datasheet?p=RF05VAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)
23+18.80 грн
34+11.75 грн
50+8.97 грн
100+8.02 грн
186+5.00 грн
510+4.76 грн
Мінімальне замовлення: 23
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RF05VYM2SFHTR ROHM SEMICONDUCTOR datasheet?p=RF05VYM2SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
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RF05VAM1STR ROHM SEMICONDUCTOR datasheet?p=RF05VAM1S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
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UMH9NTN UMH9NTN ROHM SEMICONDUCTOR datasheet?p=UMH9N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)
28+15.38 грн
36+11.11 грн
41+9.68 грн
58+6.87 грн
100+6.04 грн
260+3.60 грн
715+3.40 грн
Мінімальне замовлення: 28
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BZX84C3V3LYT116 BZX84C3V3LYT116 ROHM SEMICONDUCTOR datasheet?p=BZX84C3V3LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
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BD00C0AWFP-E2 ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8A9F1BE28E83A0D2&compId=bd00c0aw.pdf?ci_sign=d53b22563f9f06ec98673fcca38be2a2cefb708c Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 3...15V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...26.5V
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BA50BC0WFP-E2 ROHM SEMICONDUCTOR datasheet?p=BA50BC0WFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
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BA33BC0WFP-E2 ROHM SEMICONDUCTOR datasheet?p=BA33BC0WFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Case: TO252-5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
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RQ5C060BCTCL ROHM SEMICONDUCTOR datasheet?p=RQ5C060BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -6A
Gate charge: 19.2nC
On-state resistance: 51mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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RQ5C035BCTCL ROHM SEMICONDUCTOR datasheet?p=RQ5C035BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
Gate charge: 6.5nC
On-state resistance: 135mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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RF6C055BCTCR ROHM SEMICONDUCTOR datasheet?p=RF6C055BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T
Case: SOT363T
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -5.5A
Gate charge: 15.2nC
On-state resistance: 25.8mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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RJU002N06FRAT106 ROHM SEMICONDUCTOR UMT3_T106_taping.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 3.1Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±12V
Drain-source voltage: 60V
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RSM002N06T2L ROHM SEMICONDUCTOR rsm002n06-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Case: VMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 12Ω
Power dissipation: 0.15W
Drain current: 0.25A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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RHU002N06FRAT106 ROHM SEMICONDUCTOR datasheet?p=RHU002N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
On-state resistance: 4Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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BD2221G-TR ROHM SEMICONDUCTOR datasheet?p=BD2221G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Operating temperature: -40...85°C
Kind of integrated circuit: high-side
Active logical level: low
Type of integrated circuit: power switch
Kind of output: N-Channel
On-state resistance: 0.21Ω
Number of channels: 1
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Case: SSOP5
Mounting: SMD
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RSQ020N03HZGTR ROHM SEMICONDUCTOR rsq020n03hzgtr-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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RGT16BM65DTL ROHM SEMICONDUCTOR datasheet?p=RGT16BM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO252
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
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RGT16NL65DGTL ROHM SEMICONDUCTOR datasheet?p=RGT16NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
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RGT16NS65DGTL ROHM SEMICONDUCTOR datasheet?p=RGT16NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: LPDS
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
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RB168MM100TR RB168MM100TR ROHM SEMICONDUCTOR datasheet?p=RB168MM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.4µA
Max. forward voltage: 0.81V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SOD123F
на замовлення 865 шт:
термін постачання 21-30 дні (днів)
14+31.62 грн
19+21.35 грн
50+15.40 грн
100+13.25 грн
151+6.19 грн
413+5.87 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RSJ650N10TL ROHM SEMICONDUCTOR rsj650n10-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
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BU4327G-TR BU4327G-TR ROHM SEMICONDUCTOR datasheet?p=BU4327G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 70mA
Threshold on-voltage: 2.7V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
на замовлення 2292 шт:
термін постачання 21-30 дні (днів)
20+21.37 грн
32+12.78 грн
100+10.63 грн
118+7.86 грн
325+7.46 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BU4327FVE-TR ROHM SEMICONDUCTOR datasheet?p=BU4327FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU43
Kind of RESET output: CMOS
Case: VSOF5
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Kind of integrated circuit: voltage detector
Type of integrated circuit: supervisor circuit
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1SS380VMFHTE-17 1SS380VMFHTE-17 ROHM SEMICONDUCTOR datasheet?p=1SS380VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
на замовлення 2050 шт:
термін постачання 21-30 дні (днів)
23+18.80 грн
37+10.95 грн
100+6.53 грн
250+5.43 грн
500+4.78 грн
1000+4.25 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
1SS380VMTE-17 1SS380VMTE-17 ROHM SEMICONDUCTOR datasheet?p=1SS380VM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
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RS1E350BNTB ROHM SEMICONDUCTOR rs1e350bntb-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 80A
Power dissipation: 35W
Drain-source voltage: 30V
Pulsed drain current: 140A
Case: HSOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 185nC
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RCJ700N20TL ROHM SEMICONDUCTOR datasheet?p=RCJ700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; Idm: 140A; 297W; D2PAK
Mounting: SMD
On-state resistance: 87mΩ
Drain current: 70A
Power dissipation: 297W
Drain-source voltage: 200V
Pulsed drain current: 140A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 125nC
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RRH090P03TB1 RRH090P03TB1 ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDD92C42BC3B45920D3&compId=rrh090p03.pdf?ci_sign=6152b7b731579df02dd9c35234ef6622cc5670c1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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R6006JND3TL1 ROHM SEMICONDUCTOR datasheet?p=R6006JND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 15.5nC
On-state resistance: 936mΩ
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 86W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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R6006KND3TL1 ROHM SEMICONDUCTOR r6006knd3tl1-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 12nC
On-state resistance: 1.6Ω
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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RF505BM6SFHTL ROHM SEMICONDUCTOR datasheet?p=RF505BM6SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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RF505BM6STL ROHM SEMICONDUCTOR datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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BD4942G-TR ROHM SEMICONDUCTOR bd48xxg-e.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
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RB160L-40TE25 RB160L-40TE25 ROHM SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 70A
Max. off-state voltage: 40V
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
13+33.33 грн
19+21.43 грн
100+12.54 грн
110+8.49 грн
303+8.02 грн
1000+7.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SP8M21FRATB SP8M21FRATB ROHM SEMICONDUCTOR datasheet?p=SP8M21FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
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SP8M6FRATB SP8M6FRATB ROHM SEMICONDUCTOR datasheet?p=SP8M6FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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SP8M8FRATB SP8M8FRATB ROHM SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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QS8M51FRATR ROHM SEMICONDUCTOR Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
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QS8M51TR ROHM SEMICONDUCTOR datasheet?p=QS8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
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UMG3N-TR ROHM SEMICONDUCTOR Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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FMG3AT148 FMG3AT148 ROHM SEMICONDUCTOR emg3t2r-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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DTC143ZEBHZGTL ROHM SEMICONDUCTOR dtc143ze3-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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R6042JNZ4C13 datasheet?p=R6042JNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 42A; Idm: 126A; 495W; TO247
Mounting: THT
Kind of package: tube
Case: TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 0.1µC
On-state resistance: 0.104Ω
Gate-source voltage: ±30V
Drain current: 42A
Pulsed drain current: 126A
Power dissipation: 495W
Drain-source voltage: 600V
Kind of channel: enhancement
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RSH070N05GZETB rsh070n05-e.pdf
RSH070N05GZETB
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
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RSH070N05TB1 rsh070n05-e.pdf
RSH070N05TB1
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 7A; Idm: 28A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 12nC
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BU7232SF-E2 bu7251g-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: SOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...105°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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BU7232F-E2 bu7231g-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: SOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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BU7232FVM-TR bu7251g-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; MSOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: MSOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...85°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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BU7232SFVM-TR bu7251g-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; MSOP8; reel,tape; Iio: 1pA; IB: 1pA
Case: MSOP8
Type of integrated circuit: comparator
Mounting: SMT
Kind of package: reel; tape
Operating temperature: -40...105°C
Input bias current: 1pA
Input offset current: 1pA
Input offset voltage: 11mV
Voltage supply range: ± 0.9...2.75V DC; 1.8...5.5V DC
Number of comparators: 2
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FMA4AT148 datasheet?p=FMA4A&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
FMA4AT148
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
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RB520CM-60T2R datasheet?p=RB520CM-60&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520CM-60T2R
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.47V
Leakage current: 3µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
на замовлення 6228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.09 грн
81+4.92 грн
100+4.05 грн
500+3.54 грн
503+1.86 грн
1382+1.76 грн
Мінімальне замовлення: 25
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RB520SM-30T2R datasheet?p=RB520SM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520SM-30T2R
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520VM-40FHTE-17 datasheet?p=RB520VM-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520VM-40FHTE-17
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520HS-30T15R datasheet?p=RB520HS-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN0603-2,SOD962-2; SMD; 30V; 0.2A
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: DSN0603-2; SOD962-2
Max. forward voltage: 0.43V
Leakage current: 0.3µA
Kind of package: reel; tape
Max. forward impulse current: 1.5A
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RB520CM-30T2R datasheet?p=RB520CM-30&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520CM-30T2R
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
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RB520CS-30FHT2RA datasheet?p=RB520CS-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520CS-30FHT2RA
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.1A
Semiconductor structure: single diode
Case: SOD923
Max. forward voltage: 0.45V
Leakage current: 0.5µA
Kind of package: reel; tape
Max. forward impulse current: 0.5A
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RB520SM-40FHT2R datasheet?p=RB520SM-40FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520SM-40FHT2R
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SC79; SOD523
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520VM-30FHTE-17 datasheet?p=RB520VM-30FH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520VM-30FHTE-17
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.58V
Leakage current: 1µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RB520VM-40TE-17 datasheet?p=RB520VM-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB520VM-40TE-17
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323F; SMD; 40V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: single diode
Case: SOD323F
Max. forward voltage: 0.55V
Leakage current: 10µA
Kind of package: reel; tape
Max. forward impulse current: 1A
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RF05VYM1SFHTR datasheet?p=RF05VYM1SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
RF05VYM1SFHTR
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
на замовлення 3289 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+20.51 грн
27+14.92 грн
32+12.62 грн
51+7.90 грн
100+6.54 грн
217+4.31 грн
597+4.07 грн
3000+3.93 грн
Мінімальне замовлення: 21
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RF05VAM2STR datasheet?p=RF05VAM2S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RF05VAM2STR
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.80 грн
34+11.75 грн
50+8.97 грн
100+8.02 грн
186+5.00 грн
510+4.76 грн
Мінімальне замовлення: 23
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RF05VYM2SFHTR datasheet?p=RF05VYM2SFH&amp;dist=Digi-key&amp;media=referral&amp;source=digi-key.com&amp;campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
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RF05VAM1STR datasheet?p=RF05VAM1S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 0.5A; 25ns; SOD323HE; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SOD323HE
Max. forward voltage: 0.98V
Max. forward impulse current: 6A
Kind of package: reel; tape
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UMH9NTN datasheet?p=UMH9N&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
UMH9NTN
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1830 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+15.38 грн
36+11.11 грн
41+9.68 грн
58+6.87 грн
100+6.04 грн
260+3.60 грн
715+3.40 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BZX84C3V3LYT116 datasheet?p=BZX84C3V3LY&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C3V3LYT116
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
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BD00C0AWFP-E2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD8A9F1BE28E83A0D2&compId=bd00c0aw.pdf?ci_sign=d53b22563f9f06ec98673fcca38be2a2cefb708c
Виробник: ROHM SEMICONDUCTOR
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 3÷15V; 1A; TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.5V
Output voltage: 3...15V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4...26.5V
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BA50BC0WFP-E2 datasheet?p=BA50BC0WFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; TO252-5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 1A
Case: TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...105°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...16V
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BA33BC0WFP-E2 datasheet?p=BA33BC0WFP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO252-5; SMD
Case: TO252-5
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: voltage regulator
Operating temperature: -40...105°C
Output current: 1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...16V
Output voltage: 3.3V
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RQ5C060BCTCL datasheet?p=RQ5C060BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -6A
Gate charge: 19.2nC
On-state resistance: 51mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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RQ5C035BCTCL datasheet?p=RQ5C035BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
Gate charge: 6.5nC
On-state resistance: 135mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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RF6C055BCTCR datasheet?p=RF6C055BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T
Case: SOT363T
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -5.5A
Gate charge: 15.2nC
On-state resistance: 25.8mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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RJU002N06FRAT106 UMT3_T106_taping.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 3.1Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±12V
Drain-source voltage: 60V
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RSM002N06T2L rsm002n06-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 250mA; Idm: 1A; 150mW; VMT3
Case: VMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 12Ω
Power dissipation: 0.15W
Drain current: 0.25A
Pulsed drain current: 1A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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RHU002N06FRAT106 datasheet?p=RHU002N06FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Case: UMT3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 2.2nC
On-state resistance: 4Ω
Power dissipation: 0.2W
Drain current: 0.2A
Pulsed drain current: 0.8A
Gate-source voltage: ±20V
Drain-source voltage: 60V
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BD2221G-TR datasheet?p=BD2221G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 1; N-Channel; SMD; SSOP5; -40÷85°C
Operating temperature: -40...85°C
Kind of integrated circuit: high-side
Active logical level: low
Type of integrated circuit: power switch
Kind of output: N-Channel
On-state resistance: 0.21Ω
Number of channels: 1
Supply voltage: 2.7...5.5V
Protection: over current OCP; overheating OTP; undervoltage UVP
Case: SSOP5
Mounting: SMD
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RSQ020N03HZGTR rsq020n03hzgtr-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2A; Idm: 8A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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RGT16BM65DTL datasheet?p=RGT16BM65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO252
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO252
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
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RGT16NL65DGTL datasheet?p=RGT16NL65D&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; TO263
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: TO263
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
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RGT16NS65DGTL datasheet?p=RGT16NS65D(LPDS)&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Виробник: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 8A; 47W; LPDS
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Case: LPDS
Mounting: SMD
Gate charge: 21nC
Turn-on time: 27ns
Turn-off time: 170ns
Collector current: 8A
Gate-emitter voltage: ±30V
Pulsed collector current: 24A
Power dissipation: 47W
Collector-emitter voltage: 650V
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RB168MM100TR datasheet?p=RB168MM100&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB168MM100TR
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 100V; 1A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 0.4µA
Max. forward voltage: 0.81V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 100V
Semiconductor structure: single diode
Case: SOD123F
на замовлення 865 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.62 грн
19+21.35 грн
50+15.40 грн
100+13.25 грн
151+6.19 грн
413+5.87 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
RSJ650N10TL rsj650n10-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 130A
Power dissipation: 100W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: reel; tape
Kind of channel: enhancement
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BU4327G-TR datasheet?p=BU4327G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BU4327G-TR
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Mounting: SMD
Operating temperature: -40...125°C
Maximum output current: 70mA
Threshold on-voltage: 2.7V
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: CMOS
Active logical level: low
Case: SSOP5
Type of integrated circuit: supervisor circuit
на замовлення 2292 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.37 грн
32+12.78 грн
100+10.63 грн
118+7.86 грн
325+7.46 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
BU4327FVE-TR datasheet?p=BU4327FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Manufacturer series: BU43
Kind of RESET output: CMOS
Case: VSOF5
Active logical level: low
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Kind of integrated circuit: voltage detector
Type of integrated circuit: supervisor circuit
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1SS380VMFHTE-17 datasheet?p=1SS380VMFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
1SS380VMFHTE-17
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
на замовлення 2050 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.80 грн
37+10.95 грн
100+6.53 грн
250+5.43 грн
500+4.78 грн
1000+4.25 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
1SS380VMTE-17 datasheet?p=1SS380VM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
1SS380VMTE-17
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
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RS1E350BNTB rs1e350bntb-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 140A; 35W; HSOP8
Mounting: SMD
On-state resistance: 2.5mΩ
Drain current: 80A
Power dissipation: 35W
Drain-source voltage: 30V
Pulsed drain current: 140A
Case: HSOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 185nC
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RCJ700N20TL datasheet?p=RCJ700N20&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 70A; Idm: 140A; 297W; D2PAK
Mounting: SMD
On-state resistance: 87mΩ
Drain current: 70A
Power dissipation: 297W
Drain-source voltage: 200V
Pulsed drain current: 140A
Case: D2PAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 125nC
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RRH090P03TB1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD92C42BC3B45920D3&compId=rrh090p03.pdf?ci_sign=6152b7b731579df02dd9c35234ef6622cc5670c1
RRH090P03TB1
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -36A; 2W; SOP8; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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R6006JND3TL1 datasheet?p=R6006JND3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 86W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 15.5nC
On-state resistance: 936mΩ
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 86W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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R6006KND3TL1 r6006knd3tl1-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 18A; 70W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Gate charge: 12nC
On-state resistance: 1.6Ω
Drain current: 6A
Pulsed drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 70W
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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RF505BM6SFHTL datasheet?p=RF505BM6SFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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RF505BM6STL datasheet?p=RF505BM6S&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; 30ns; DPAK; Ufmax: 1.7V; Ifsm: 50A
Type of diode: rectifying
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 30ns
Max. forward voltage: 1.7V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Case: DPAK
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BD4942G-TR bd48xxg-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Kind of RESET output: CMOS
Active logical level: low
Supply voltage: 950mV DC...10V DC
Case: SSOP5
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 4.2V
Kind of package: reel; tape
Number of channels: 1
Integrated circuit features: ±1% accuracy
Manufacturer series: BD49
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RB160L-40TE25
RB160L-40TE25
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 70A
Max. off-state voltage: 40V
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.33 грн
19+21.43 грн
100+12.54 грн
110+8.49 грн
303+8.02 грн
1000+7.86 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SP8M21FRATB datasheet?p=SP8M21FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M21FRATB
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 45/-45V; 6/-4A; Idm: 16÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 45/-45V
Drain current: 6/-4A
Pulsed drain current: 16...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 37/65mΩ
Mounting: SMD
Gate charge: 15.4/20nC
Kind of package: reel; tape
Kind of channel: enhancement
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SP8M6FRATB datasheet?p=SP8M6FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SP8M6FRATB
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5/-3.5A; Idm: 14÷20A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5/-3.5A
Pulsed drain current: 14...20A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 82/165mΩ
Mounting: SMD
Gate charge: 3.9/5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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SP8M8FRATB
SP8M8FRATB
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6/-4.5A; Idm: 18÷24A; 2W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6/-4.5A
Pulsed drain current: 18...24A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 47/90mΩ
Mounting: SMD
Gate charge: 7.2/8.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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QS8M51FRATR
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
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QS8M51TR datasheet?p=QS8M51&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 2/-1.5A; Idm: 6A; 1.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 2/-1.5A
Pulsed drain current: 6A
Power dissipation: 1.5W
Case: TSMD8
Gate-source voltage: ±20V
On-state resistance: 355/540mΩ
Mounting: SMD
Gate charge: 4.7/17nC
Kind of package: reel; tape
Kind of channel: enhancement
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UMG3N-TR
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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FMG3AT148 emg3t2r-e.pdf
FMG3AT148
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; SOT25; 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT25
Current gain: 100...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
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DTC143ZEBHZGTL dtc143ze3-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Current gain: 80
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