Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101691) > Сторінка 1693 з 1695
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| DTA123EETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123EKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 20 Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DTA123JEFRATL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| DTA123JETL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123JKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA8391G-TR | ROHM SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; Cmp: 1; SMT; SSOP5; reel,tape; Iio: 200nA; IB: 0.5uA Kind of package: reel; tape Type of integrated circuit: comparator Case: SSOP5 Mounting: SMT Operating temperature: -40...85°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 15mV Number of comparators: 1 Voltage supply range: ± 1...18V DC; 2...36V DC |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
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BA10393F-E2 | ROHM SEMICONDUCTOR |
Category: SMD comparatorsDescription: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA Mounting: SMT Operating temperature: -40...85°C Type of integrated circuit: comparator Kind of output: open collector Case: SO8 Kind of comparator: universal Input offset current: 50nA Input offset voltage: 5mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 2 Kind of package: reel; tape |
на замовлення 2098 шт: термін постачання 21-30 дні (днів) |
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SCS308AHGC9 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.71V Max. forward impulse current: 250A Leakage current: 0.16mA Kind of package: tube Max. load current: 36A Power dissipation: 57W |
на замовлення 747 шт: термін постачання 21-30 дні (днів) |
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| BA4584FV-E2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape Kind of package: reel; tape Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Case: SSOP-B14 Operating temperature: -40...85°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 3mV Voltage supply range: ± 2...16V DC; 4...32V DC Slew rate: 5V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BA4584YFV-MGE2 | ROHM SEMICONDUCTOR |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape Kind of package: reel; tape Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Case: SSOP-B14 Operating temperature: -40...105°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 3mV Voltage supply range: ± 2...16V DC; 4...32V DC Slew rate: 5V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CDZVT2R3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 100mW; 3.3V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EDZVT2R3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KDZVTFTR3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 80µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| UDZVTE-173.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| EDZVFHT2R3.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| UDZVFHTE-173.3B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RQ3E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 60A Power dissipation: 17W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1E150GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 60A Power dissipation: 22W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCS240AE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 160A Max. forward impulse current: 520A Leakage current: 0.4mA Power dissipation: 270W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCS240AE2HRC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 160A Max. forward impulse current: 520A Leakage current: 0.4mA Power dissipation: 270W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SCS240KE2C | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 160A Max. forward impulse current: 620A Power dissipation: 420W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SCS240KE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 160A Max. forward impulse current: 620A Leakage current: 0.4mA Power dissipation: 420W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BA78M18FP-E2 | ROHM SEMICONDUCTOR |
Category: Fixed voltage regulatorsDescription: IC: voltage regulator; fixed; 18V; 0.5A; TO252-3; SMD; reel,tape Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Number of channels: 1 Voltage drop: 2V Kind of voltage regulator: fixed Input voltage: 21...33V Output voltage: 18V Case: TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EDZVT2R5.1B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC79; SOD523F Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 6440 шт: термін постачання 21-30 дні (днів) |
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| CSL1901DW1 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; orange; SMD; 9.4mcd; 2mA; 605nm; Lens: white,diffused Mounting: SMD Type of diode: LED LED colour: orange Wavelength: 605nm LED current: 2mA Luminosity: 9.4mcd LED lens: diffused; white Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BV1LB028FPJ-CE1 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 2.4A; Ch: 1; SMD; -40÷150°C; 3÷5.5V Mounting: SMD Kind of integrated circuit: low-side Type of integrated circuit: power switch Protection: over current OCP; overheating OTP; undervoltage UVP Operating temperature: -40...150°C On-state resistance: 85mΩ Number of channels: 1 Output current: 2.4A Supply voltage: 3...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAV99HYT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RUQ050N02FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BU4312F-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Case: SSOP5 Mounting: SMD Kind of package: reel; tape Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 1.2V Integrated circuit features: ±1% accuracy Manufacturer series: BU43 Kind of RESET output: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SC3906KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Case: SC59; SOT346 Type of transistor: NPN Mounting: SMD Collector current: 50mA Power dissipation: 0.2W Current gain: 180...390 Collector-emitter voltage: 120V Frequency: 140MHz Polarisation: bipolar |
на замовлення 2795 шт: термін постачання 21-30 дні (днів) |
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| BD5227FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Type of integrated circuit: supervisor circuit Case: VSOF5 Supply voltage: 950mV DC...10V DC Mounting: SMD Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Number of channels: 1 Threshold on-voltage: 2.7V Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RQ3E180AJTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 39nC On-state resistance: 5.8mΩ Power dissipation: 30W Drain current: 30A Pulsed drain current: 72A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of channel: enhancement Case: HSMT8 |
на замовлення 1196 шт: термін постачання 21-30 дні (днів) |
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BD9G341AEFJ-E2 | ROHM SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: HTSSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: buck Kind of package: reel; tape Number of channels: 1 Output voltage: 1...76V DC Output current: 3A Input voltage: 12...76V DC Frequency: 750kHz |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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RB058L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.64V Max. forward impulse current: 120A Kind of package: reel; tape Leakage current: 4µA |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
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RBR5L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.53V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.2mA |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS106AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 86A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 65W Max. load current: 29A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS108AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 110A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 75W Max. load current: 35A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS112AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 167A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 93W Max. load current: 48A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5824T100R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DA204UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A Type of diode: switching Mounting: SMD Max. off-state voltage: 20V Load current: 0.1A Semiconductor structure: double series Case: SC70; SOT323 Max. forward voltage: 1V Max. forward impulse current: 0.3A Kind of package: reel; tape Max. load current: 0.2A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DA204KT146 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 20V; 0.1A; SC59,SOT346; Ufmax: 1V; Ifsm: 0.3A Type of diode: switching Mounting: SMD Max. off-state voltage: 20V Load current: 0.1A Semiconductor structure: double series Case: SC59; SOT346 Max. forward voltage: 1V Max. forward impulse current: 0.3A Kind of package: reel; tape Max. load current: 0.2A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RFN20NS4SFHTL | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 430V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 528 шт: термін постачання 21-30 дні (днів) |
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| RB160VYM-40FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 10A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RB168VYM-40FHTR | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.79V Leakage current: 0.5µA Max. forward impulse current: 5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SH8M41TB1 | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 80/-80V Drain current: 3.4/-2.6A Pulsed drain current: 10.4...13.6A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 160/310mΩ Mounting: SMD Gate charge: 6.6/8.2nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1691 шт: термін постачання 21-30 дні (днів) |
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SST3904T116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD1754HFN-TR | ROHM SEMICONDUCTOR |
Category: LED drivers Description: IC: driver; LED driver; HSON8; 32mA; 0.2÷4.1V; Ch: 4; 2.7÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: HSON8 Output current: 32mA Output voltage: 0.2...4.1V Number of channels: 4 Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -30...85°C Application: LED lighting control Kind of package: reel; tape |
на замовлення 2736 шт: термін постачання 21-30 дні (днів) |
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RB531SM-30T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky rectifying Case: SC79; SOD523 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.35V Leakage current: 10µA Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DTC143ECAHZGT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Current gain: 30 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SML-812MTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow green; SMD; 1305; 14÷40mcd; 2.1VDC; 3.4x1.25x1.1mm Case: 1305 Mounting: SMD LED lens: transparent LED colour: yellow green Wavelength: 569...575nm Power: 65mW Dimensions: 3.4x1.25x1.1mm Luminosity: 14...40mcd LED current: 20mA Operating voltage: 2.1V DC Front: flat Type of diode: LED |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
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UM6K31NTN | ROHM SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.25A Power dissipation: 0.15W Case: UMT6 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 1A |
на замовлення 2847 шт: термін постачання 21-30 дні (днів) |
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| RS1G120MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 48A Drain current: 34A Drain-source voltage: 40V Gate charge: 9.4nC On-state resistance: 20.7mΩ Power dissipation: 25W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G150MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 60A Drain current: 43A Drain-source voltage: 40V Gate charge: 15nC On-state resistance: 13.3mΩ Power dissipation: 25W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G180MNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Pulsed drain current: 72A Drain current: 57A Drain-source voltage: 40V Gate charge: 19.5nC On-state resistance: 9.2mΩ Power dissipation: 30W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RS1G201ATTB1 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8 Mounting: SMD Case: HSOP8 Kind of package: reel; tape Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -80A Drain current: -78A Drain-source voltage: -40V Gate charge: 130nC On-state resistance: 6.5mΩ Power dissipation: 40W |
товару немає в наявності |
В кошику од. на суму грн. |
| DTA123EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 20
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 20
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123JEFRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123JETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| DTA123JKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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| BA8391G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 1; SMT; SSOP5; reel,tape; Iio: 200nA; IB: 0.5uA
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SSOP5
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 15mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; Cmp: 1; SMT; SSOP5; reel,tape; Iio: 200nA; IB: 0.5uA
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SSOP5
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 15mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 890 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.90 грн |
| 18+ | 22.86 грн |
| 25+ | 20.48 грн |
| 100+ | 9.36 грн |
| 274+ | 8.89 грн |
| BA10393F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of package: reel; tape
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 2; SMT; SO8; reel,tape; 50nA
Mounting: SMT
Operating temperature: -40...85°C
Type of integrated circuit: comparator
Kind of output: open collector
Case: SO8
Kind of comparator: universal
Input offset current: 50nA
Input offset voltage: 5mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 2
Kind of package: reel; tape
на замовлення 2098 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.77 грн |
| 100+ | 23.25 грн |
| SCS308AHGC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. forward impulse current: 250A
Leakage current: 0.16mA
Kind of package: tube
Max. load current: 36A
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. forward impulse current: 250A
Leakage current: 0.16mA
Kind of package: tube
Max. load current: 36A
Power dissipation: 57W
на замовлення 747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.65 грн |
| 5+ | 222.21 грн |
| 6+ | 177.77 грн |
| 15+ | 168.24 грн |
| BA4584FV-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
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| BA4584YFV-MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...105°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...105°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
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| CDZVT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.3V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.3V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Leakage current: 20µA
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| EDZVT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
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| KDZVTFTR3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 80µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 80µA
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| UDZVTE-173.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
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| EDZVFHT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
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| UDZVFHTE-173.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
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| RQ3E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 60A
Power dissipation: 17W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 60A
Power dissipation: 17W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RS1E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SCS240AE2GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
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| SCS240AE2HRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
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| SCS240KE2C |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Power dissipation: 420W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Power dissipation: 420W
Kind of package: tube
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| SCS240KE2GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Leakage current: 0.4mA
Power dissipation: 420W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Leakage current: 0.4mA
Power dissipation: 420W
Kind of package: tube
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| BA78M18FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 18V; 0.5A; TO252-3; SMD; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Voltage drop: 2V
Kind of voltage regulator: fixed
Input voltage: 21...33V
Output voltage: 18V
Case: TO252-3
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 18V; 0.5A; TO252-3; SMD; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Voltage drop: 2V
Kind of voltage regulator: fixed
Input voltage: 21...33V
Output voltage: 18V
Case: TO252-3
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| EDZVT2R5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 6440 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 57+ | 6.98 грн |
| 100+ | 4.56 грн |
| 200+ | 3.98 грн |
| 500+ | 3.29 грн |
| 684+ | 1.36 грн |
| 1879+ | 1.29 грн |
| CSL1901DW1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; orange; SMD; 9.4mcd; 2mA; 605nm; Lens: white,diffused
Mounting: SMD
Type of diode: LED
LED colour: orange
Wavelength: 605nm
LED current: 2mA
Luminosity: 9.4mcd
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; orange; SMD; 9.4mcd; 2mA; 605nm; Lens: white,diffused
Mounting: SMD
Type of diode: LED
LED colour: orange
Wavelength: 605nm
LED current: 2mA
Luminosity: 9.4mcd
LED lens: diffused; white
Front: flat
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| BV1LB028FPJ-CE1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; SMD; -40÷150°C; 3÷5.5V
Mounting: SMD
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -40...150°C
On-state resistance: 85mΩ
Number of channels: 1
Output current: 2.4A
Supply voltage: 3...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; SMD; -40÷150°C; 3÷5.5V
Mounting: SMD
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -40...150°C
On-state resistance: 85mΩ
Number of channels: 1
Output current: 2.4A
Supply voltage: 3...5.5V
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| BAV99HYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| RUQ050N02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BU4312F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
Integrated circuit features: ±1% accuracy
Manufacturer series: BU43
Kind of RESET output: CMOS
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
Integrated circuit features: ±1% accuracy
Manufacturer series: BU43
Kind of RESET output: CMOS
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| 2SC3906KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Case: SC59; SOT346
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 180...390
Collector-emitter voltage: 120V
Frequency: 140MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Case: SC59; SOT346
Type of transistor: NPN
Mounting: SMD
Collector current: 50mA
Power dissipation: 0.2W
Current gain: 180...390
Collector-emitter voltage: 120V
Frequency: 140MHz
Polarisation: bipolar
на замовлення 2795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.19 грн |
| 16+ | 26.19 грн |
| 18+ | 22.62 грн |
| 100+ | 12.94 грн |
| 500+ | 9.21 грн |
| 1000+ | 8.17 грн |
| BD5227FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Type of integrated circuit: supervisor circuit
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Type of integrated circuit: supervisor circuit
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
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| RXH125N03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RQ3E180AJTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 5.8mΩ
Power dissipation: 30W
Drain current: 30A
Pulsed drain current: 72A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
Case: HSMT8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 5.8mΩ
Power dissipation: 30W
Drain current: 30A
Pulsed drain current: 72A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
Case: HSMT8
на замовлення 1196 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.41 грн |
| 10+ | 43.57 грн |
| 38+ | 24.52 грн |
| 105+ | 23.17 грн |
| BD9G341AEFJ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.56 грн |
| 10+ | 176.18 грн |
| 25+ | 161.10 грн |
| RB058L-60DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.64V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 4µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.64V
Max. forward impulse current: 120A
Kind of package: reel; tape
Leakage current: 4µA
на замовлення 880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.84 грн |
| 12+ | 33.17 грн |
| 50+ | 26.19 грн |
| 100+ | 23.57 грн |
| 250+ | 20.40 грн |
| 500+ | 18.25 грн |
| RBR5L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.10 грн |
| 10+ | 46.58 грн |
| 25+ | 40.32 грн |
| 100+ | 31.98 грн |
| 500+ | 25.00 грн |
| 1000+ | 22.70 грн |
| RB050L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
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| RB058L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
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| RB068L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
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| SCS106AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 86A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 65W
Max. load current: 29A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 86A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 65W
Max. load current: 29A
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| SCS108AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 110A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 75W
Max. load current: 35A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 110A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 75W
Max. load current: 35A
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| SCS112AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 167A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 93W
Max. load current: 48A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 167A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 93W
Max. load current: 48A
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| 2SC5824T100R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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| DA204UT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
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| DA204KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC59,SOT346; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC59; SOT346
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC59,SOT346; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC59; SOT346
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
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| RFN20NS4SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
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| RE1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 528 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 31+ | 12.86 грн |
| 100+ | 7.21 грн |
| 500+ | 4.97 грн |
| RB160VYM-40FHTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 10A
Kind of package: reel; tape
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| RB168VYM-40FHTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 0.5µA
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 0.5µA
Max. forward impulse current: 5A
Kind of package: reel; tape
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| SH8M41TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 80/-80V; 3.4/-2.6A; 2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 80/-80V
Drain current: 3.4/-2.6A
Pulsed drain current: 10.4...13.6A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 160/310mΩ
Mounting: SMD
Gate charge: 6.6/8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1691 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.74 грн |
| 10+ | 80.79 грн |
| 27+ | 35.39 грн |
| 73+ | 33.41 грн |
| SST3904T116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 200mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| BD1754HFN-TR |
Виробник: ROHM SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; LED driver; HSON8; 32mA; 0.2÷4.1V; Ch: 4; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: HSON8
Output current: 32mA
Output voltage: 0.2...4.1V
Number of channels: 4
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -30...85°C
Application: LED lighting control
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; HSON8; 32mA; 0.2÷4.1V; Ch: 4; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: HSON8
Output current: 32mA
Output voltage: 0.2...4.1V
Number of channels: 4
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -30...85°C
Application: LED lighting control
Kind of package: reel; tape
на замовлення 2736 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 47.86 грн |
| 14+ | 28.89 грн |
| 25+ | 25.47 грн |
| 100+ | 24.92 грн |
| RB531SM-30T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79,SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SC79; SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.35V
Leakage current: 10µA
Max. forward impulse current: 1A
Kind of package: reel; tape
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| DTC143ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Current gain: 30
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| SML-812MTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 1305; 14÷40mcd; 2.1VDC; 3.4x1.25x1.1mm
Case: 1305
Mounting: SMD
LED lens: transparent
LED colour: yellow green
Wavelength: 569...575nm
Power: 65mW
Dimensions: 3.4x1.25x1.1mm
Luminosity: 14...40mcd
LED current: 20mA
Operating voltage: 2.1V DC
Front: flat
Type of diode: LED
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 1305; 14÷40mcd; 2.1VDC; 3.4x1.25x1.1mm
Case: 1305
Mounting: SMD
LED lens: transparent
LED colour: yellow green
Wavelength: 569...575nm
Power: 65mW
Dimensions: 3.4x1.25x1.1mm
Luminosity: 14...40mcd
LED current: 20mA
Operating voltage: 2.1V DC
Front: flat
Type of diode: LED
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.01 грн |
| 13+ | 32.30 грн |
| UM6K31NTN |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 1A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 250mA; Idm: 1A; 150mW; UMT6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.25A
Power dissipation: 0.15W
Case: UMT6
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 1A
на замовлення 2847 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.77 грн |
| 18+ | 22.38 грн |
| 23+ | 17.86 грн |
| 100+ | 7.14 грн |
| 500+ | 5.40 грн |
| RS1G120MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 34A; Idm: 48A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 48A
Drain current: 34A
Drain-source voltage: 40V
Gate charge: 9.4nC
On-state resistance: 20.7mΩ
Power dissipation: 25W
товару немає в наявності
В кошику
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| RS1G150MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; Idm: 60A; 25W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 60A
Drain current: 43A
Drain-source voltage: 40V
Gate charge: 15nC
On-state resistance: 13.3mΩ
Power dissipation: 25W
товару немає в наявності
В кошику
од. на суму грн.
| RS1G180MNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 57A; Idm: 72A; 30W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 72A
Drain current: 57A
Drain-source voltage: 40V
Gate charge: 19.5nC
On-state resistance: 9.2mΩ
Power dissipation: 30W
товару немає в наявності
В кошику
од. на суму грн.
| RS1G201ATTB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -78A; Idm: -80A; 40W; HSOP8
Mounting: SMD
Case: HSOP8
Kind of package: reel; tape
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain current: -78A
Drain-source voltage: -40V
Gate charge: 130nC
On-state resistance: 6.5mΩ
Power dissipation: 40W
товару немає в наявності
В кошику
од. на суму грн.




















