Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (101691) > Сторінка 1692 з 1695
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RB530CM-60T2R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.2A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
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| RJP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
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| RHP020N06T100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| RSR020N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
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| RSR020N06HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
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| SCT3022ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
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| SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
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| SCT3030ARC14 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| 2SC4725TLP | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.15W Collector-emitter voltage: 20V Current gain: 82...180 Frequency: 1.5GHz Polarisation: bipolar Type of transistor: NPN |
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| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| RV2C014BCT2CL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -2.8A Power dissipation: 0.6W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
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| RV2C002UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Pulsed drain current: 0.6A Power dissipation: 0.1W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 11.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RB088BM100FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 5µA Max. forward voltage: 0.87V Load current: 5A x2 Max. forward impulse current: 50A Max. off-state voltage: 100V |
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В кошику од. на суму грн. | |||||||||||||||
| RB098BM100FHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 3µA Max. forward voltage: 0.77V Load current: 3A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
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В кошику од. на суму грн. | |||||||||||||||
| RBQ15BM100AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 140µA Max. forward voltage: 0.71V Load current: 7.5A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RBQ20BM100AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.2mA Max. forward voltage: 0.69V Load current: 10A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCT3022KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SCT3022KLHRC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| RS1E280BNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 94nC On-state resistance: 3.2mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 30W Drain current: 80A Pulsed drain current: 112A |
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| RS1E280GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 36nC On-state resistance: 3.8mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 31W Drain current: 80A Pulsed drain current: 112A |
товару немає в наявності |
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2SC4774T106S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Frequency: 800MHz Case: SC70; SOT323 |
товару немає в наявності |
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2SC3906KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
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2SC4713KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Frequency: 800MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1757KT146S | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 0.5A Power dissipation: 0.2W Collector-emitter voltage: 15V Current gain: 270...560 Frequency: 150MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9778HFP-TR | ROHM SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Mounting: SMD Output voltage: 1...35V DC Output current: 2A Input voltage: 7...35V DC Frequency: 500MHz Type of integrated circuit: PMIC Topology: buck Kind of integrated circuit: DC/DC converter Case: HRP7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| RSR010N10HZGTL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX84C10VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOT23 Leakage current: 2µA Kind of package: reel; tape Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 10V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C10VLYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Mounting: SMD Semiconductor structure: single diode Case: SOT23 Leakage current: 0.2µA Kind of package: reel; tape Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 10V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOP8 Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -10A Gate charge: 39nC On-state resistance: 12.6mΩ Power dissipation: 2W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMG8NTR | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Semiconductor structure: common emitter Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 2595 шт: термін постачання 21-30 дні (днів) |
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| BU9880GUL-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial Supply voltage: 1.7...5.5V DC Operating temperature: -40...85°C Kind of interface: serial Access time: 5ms Memory: 64kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 8kx8bit Kind of package: reel; tape Case: VCSP50L1 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD |
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В кошику од. на суму грн. | |||||||||||||||
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arraysDescription: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Case: SOT23 Max. forward impulse current: 1.7A Max. off-state voltage: 13V Breakdown voltage: 16V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Kind of package: reel; tape Type of diode: TVS array Mounting: SMD Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C13VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6.5% Zener voltage: 13V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-06HYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 120mA x2 Semiconductor structure: common anode; double Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Max. load current: 120mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B10VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 10V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B15VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 15V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B16VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 16V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B18VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 18V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B24VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 24V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B5V1LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 5.1V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C27VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 27V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 27V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C36VLYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 36V; SMD; reel,tape; SOT23; single diode; 100nA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 36V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V6LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.6V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 5µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BD4936G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Integrated circuit features: ±1% accuracy Kind of package: reel; tape Manufacturer series: BD49 Case: SSOP5 Kind of RESET output: CMOS Active logical level: low Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 3.6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BU4936G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Integrated circuit features: ±1% accuracy Kind of package: reel; tape Manufacturer series: BU49 Case: SSOP5 Kind of RESET output: CMOS Active logical level: low Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 3.6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BU4926G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Mounting: SMD Integrated circuit features: ±1% accuracy Manufacturer series: BU49 Kind of package: reel; tape Kind of RESET output: CMOS Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.6V Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BH3547F-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: SOP8 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 77mW Number of channels: 2 Supply voltage: 4.5...6.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BH3544F-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: SOP8 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 62mW Number of channels: 2 Supply voltage: 2.8...6.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD88400GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: VCSP50L2 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 80mW Number of channels: 2 Supply voltage: 2.4...5.5V DC Impedance: 16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD88410GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: VCSP50L2 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 80mW Gain: 1V/V Number of channels: 2 Supply voltage: 2.4...5.5V DC Impedance: 16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BD88415GUL-E2 | ROHM SEMICONDUCTOR |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: VCSP50L2 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 80mW Gain: 1.5V/V Number of channels: 2 Supply voltage: 2.4...5.5V DC Impedance: 16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC013ZMT2L | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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DTA013ZMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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SML-P11MTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1.9VDC; 1x0.6x0.2mm; 1mA Power: 54mW Operating voltage: 1.9V DC Front: flat Type of diode: LED Mounting: SMD Manufacturer series: PicoLED™ LED lens: transparent LED colour: yellow green Wavelength: 466...574nm LED current: 1mA Dimensions: 1x0.6x0.2mm Luminosity: 1...2.1mcd Case: 0402 |
на замовлення 3668 шт: термін постачання 21-30 дні (днів) |
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DTA123YCAT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Type of transistor: PNP Case: SOT23 Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz Collector current: 0.1A Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT |
на замовлення 866 шт: термін постачання 21-30 дні (днів) |
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DTA123JMT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base-emitter resistor: 10kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. |
| RB530CM-60T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
товару немає в наявності
В кошику
од. на суму грн.
| RJP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| RJP020N06T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RHP020N06T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RSR020N06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| RSR020N06HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| SCT3022ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
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| SCT3022ALHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
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| SCT3030ARC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| 2SC4725TLP |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.15W
Collector-emitter voltage: 20V
Current gain: 82...180
Frequency: 1.5GHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.15W
Collector-emitter voltage: 20V
Current gain: 82...180
Frequency: 1.5GHz
Polarisation: bipolar
Type of transistor: NPN
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| RV2C010UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
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| RV2C014BCT2CL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -2.8A
Power dissipation: 0.6W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -2.8A
Power dissipation: 0.6W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| RV2C002UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| RB088BM100FHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. forward impulse current: 50A
Max. off-state voltage: 100V
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| RB098BM100FHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 3µA
Max. forward voltage: 0.77V
Load current: 3A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 3µA
Max. forward voltage: 0.77V
Load current: 3A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
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| RBQ15BM100AFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 140µA
Max. forward voltage: 0.71V
Load current: 7.5A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 140µA
Max. forward voltage: 0.71V
Load current: 7.5A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
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| RBQ20BM100AFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.2mA
Max. forward voltage: 0.69V
Load current: 10A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.2mA
Max. forward voltage: 0.69V
Load current: 10A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
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| SCT3022KLGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
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| SCT3022KLHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
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| RS1E280BNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 80A
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 80A
Pulsed drain current: 112A
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| RS1E280GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 31W
Drain current: 80A
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 31W
Drain current: 80A
Pulsed drain current: 112A
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| 2SC4774T106S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC70; SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC70; SOT323
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| 2SC3906KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
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| 2SC4713KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC59; SOT346
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| 2SD1757KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 0.5A
Power dissipation: 0.2W
Collector-emitter voltage: 15V
Current gain: 270...560
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 0.5A
Power dissipation: 0.2W
Collector-emitter voltage: 15V
Current gain: 270...560
Frequency: 150MHz
Case: SC59; SOT346
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| BD9778HFP-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Input voltage: 7...35V DC
Frequency: 500MHz
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: HRP7
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Input voltage: 7...35V DC
Frequency: 500MHz
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: HRP7
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| RSR010N10FHATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSR010N10HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BZX84C10VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Leakage current: 2µA
Kind of package: reel; tape
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Leakage current: 2µA
Kind of package: reel; tape
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Application: automotive industry
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| BZX84C10VLYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Leakage current: 0.2µA
Kind of package: reel; tape
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Mounting: SMD
Semiconductor structure: single diode
Case: SOT23
Leakage current: 0.2µA
Kind of package: reel; tape
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
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| RRS100P03HZGTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 39nC
On-state resistance: 12.6mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 39nC
On-state resistance: 12.6mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
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| UMG8NTR |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 2595 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.67 грн |
| 43+ | 9.44 грн |
| 57+ | 7.05 грн |
| 100+ | 6.25 грн |
| 285+ | 3.28 грн |
| 784+ | 3.10 грн |
| BU9880GUL-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial
Supply voltage: 1.7...5.5V DC
Operating temperature: -40...85°C
Kind of interface: serial
Access time: 5ms
Memory: 64kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: VCSP50L1
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial
Supply voltage: 1.7...5.5V DC
Operating temperature: -40...85°C
Kind of interface: serial
Access time: 5ms
Memory: 64kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: VCSP50L1
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
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| BAV99HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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| MMBZ16VALFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Max. forward impulse current: 1.7A
Max. off-state voltage: 13V
Breakdown voltage: 16V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Leakage current: 50nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Max. forward impulse current: 1.7A
Max. off-state voltage: 13V
Breakdown voltage: 16V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Leakage current: 50nA
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| BZX84C13VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6.5%
Zener voltage: 13V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6.5%
Zener voltage: 13V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BAS40-06HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
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| BZX84B10VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.2µA
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| BZX84B15VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 15V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 15V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BZX84B16VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BZX84B18VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 18V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 18V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BZX84B24VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BZX84B5V1LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 5.1V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 5.1V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
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| BZX84C27VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 27V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 27V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BZX84C36VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 36V; SMD; reel,tape; SOT23; single diode; 100nA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 36V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 36V; SMD; reel,tape; SOT23; single diode; 100nA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 36V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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| BZX84C3V6LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 5µA
Application: automotive industry
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| BD4936G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BD49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.6V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BD49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.6V
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| BU4936G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BU49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 3.6V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BU49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 3.6V
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| BU4926G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Integrated circuit features: ±1% accuracy
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Integrated circuit features: ±1% accuracy
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
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| BH3547F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 77mW
Number of channels: 2
Supply voltage: 4.5...6.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 77mW
Number of channels: 2
Supply voltage: 4.5...6.5V DC
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| BH3544F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 62mW
Number of channels: 2
Supply voltage: 2.8...6.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 62mW
Number of channels: 2
Supply voltage: 2.8...6.5V DC
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| BD88400GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
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| BD88410GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
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| BD88415GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1.5V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1.5V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
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| DTC013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 15.87 грн |
| DTA013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 975 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.98 грн |
| 120+ | 3.33 грн |
| 170+ | 2.34 грн |
| 500+ | 1.94 грн |
| 594+ | 1.57 грн |
| SML-P11MTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1.9VDC; 1x0.6x0.2mm; 1mA
Power: 54mW
Operating voltage: 1.9V DC
Front: flat
Type of diode: LED
Mounting: SMD
Manufacturer series: PicoLED™
LED lens: transparent
LED colour: yellow green
Wavelength: 466...574nm
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Luminosity: 1...2.1mcd
Case: 0402
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1.9VDC; 1x0.6x0.2mm; 1mA
Power: 54mW
Operating voltage: 1.9V DC
Front: flat
Type of diode: LED
Mounting: SMD
Manufacturer series: PicoLED™
LED lens: transparent
LED colour: yellow green
Wavelength: 466...574nm
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Luminosity: 1...2.1mcd
Case: 0402
на замовлення 3668 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.37 грн |
| 25+ | 16.03 грн |
| 29+ | 13.73 грн |
| 100+ | 8.17 грн |
| 134+ | 6.98 грн |
| 369+ | 6.59 грн |
| 1000+ | 6.27 грн |
| DTA123YCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: PNP
Case: SOT23
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Collector current: 0.1A
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
на замовлення 866 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.55 грн |
| 87+ | 4.60 грн |
| 129+ | 3.10 грн |
| 500+ | 2.44 грн |
| DTA123JMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 980 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 97+ | 4.13 грн |
| 132+ | 3.02 грн |
| 446+ | 2.10 грн |
| DTA123YKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
товару немає в наявності
В кошику
од. на суму грн.








