Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102219) > Сторінка 711 з 1704
| Фото | Назва | Виробник | Інформація |
Доступність |
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2SC4617EBTLQ | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 2192 шт: термін постачання 21-31 дні (днів) |
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2SC4617EBTLR | Rohm Semiconductor |
Description: TRANS NPN 50V 0.15A EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 180MHz Supplier Device Package: EMT3F (SOT-416FL) Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW |
на замовлення 5862 шт: термін постачання 21-31 дні (днів) |
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2SCR523UBTL | Rohm Semiconductor |
Description: TRANS NPN 50V 0.1A UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Frequency - Transition: 350MHz Supplier Device Package: UMT3F Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW |
на замовлення 30785 шт: термін постачання 21-31 дні (днів) |
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BA8391G-TR | Rohm Semiconductor |
Description: IC COMPARATOR OPEN 5-SSOP |
на замовлення 1974 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BD11600NUX-E2 | Rohm Semiconductor |
Description: IC USB SWITCH DPDT 10-VSONFeatures: USB 2.0 Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: USB On-State Resistance (Max): 6Ohm Supplier Device Package: VSON010X3020 Voltage - Supply, Single (V+): 2.5V ~ 5.5V Switch Circuit: DPDT Part Status: Active Number of Channels: 1 |
на замовлення 13886 шт: термін постачання 21-31 дні (днів) |
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BH1730FVC-TR | Rohm Semiconductor |
Description: SENSOR OPT 600NM AMBIENT 6WSOFPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Lead Exposed Pad Wavelength: 600nm Output Type: I2C Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 3.6V Supplier Device Package: 6-WSOF Proximity Detection: No Part Status: Active |
на замовлення 4875 шт: термін постачання 21-31 дні (днів) |
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BR24T02FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 2Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 256 x 8 DigiKey Programmable: Not Verified |
на замовлення 2957 шт: термін постачання 21-31 дні (днів) |
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BR24T16FVM-WTR | Rohm Semiconductor |
Description: IC EEPROM 16KBIT I2C 8MSOPPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-MSOP Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
на замовлення 1107 шт: термін постачання 21-31 дні (днів) |
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BU18TD3WG-TR | Rohm Semiconductor |
Description: IC REG LINEAR 1.8V 200MA 5-SSOPPackaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 5-SSOP Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 70dB (1kHz) Voltage Dropout (Max): 0.6V @ 200mA Protection Features: Over Current, Over Temperature |
на замовлення 4053 шт: термін постачання 21-31 дні (днів) |
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DAN222WMTL | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: EMD3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 70 V |
на замовлення 6474 шт: термін постачання 21-31 дні (днів) |
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DTC043ZMT2L | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 57755 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R15B | Rohm Semiconductor |
Description: DIODE ZENER 15V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 42 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
на замовлення 9464 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R16B | Rohm Semiconductor |
Description: DIODE ZENER 16V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
на замовлення 23867 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R18B | Rohm Semiconductor |
Description: DIODE ZENER 18V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 65 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 100 nA @ 13 V |
на замовлення 6448 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R3.6B | Rohm Semiconductor |
Description: DIODE ZENER 3.6V 150MW EMD2Tolerance: ±3% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
на замовлення 31433 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R5.1B | Rohm Semiconductor |
Description: DIODE ZENER 5.1V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V |
на замовлення 62307 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R5.6B | Rohm Semiconductor |
Description: DIODE ZENER 5.6V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V |
на замовлення 3209 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R6.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
на замовлення 5758 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R6.8B | Rohm Semiconductor |
Description: DIODE ZENER 6.8V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 40 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V |
на замовлення 46237 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R7.5B | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 500 nA @ 4 V |
на замовлення 20370 шт: термін постачання 21-31 дні (днів) |
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EDZVT2R9.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.1V 150MW EMD2Tolerance: ±2% Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: EMD2 Power - Max: 150 mW Current - Reverse Leakage @ Vr: 500 nA @ 6 V |
на замовлення 2615 шт: термін постачання 21-31 дні (днів) |
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QS8J4TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 550mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active |
на замовлення 3755 шт: термін постачання 21-31 дні (днів) |
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RAF040P01TCL | Rohm Semiconductor |
Description: MOSFET P-CH 12V 4A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V |
на замовлення 8663 шт: термін постачання 21-31 дні (днів) |
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RB168M-40TR | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 1A PMDUPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A Current - Reverse Leakage @ Vr: 550 nA @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB501VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 6pF @ 10V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: UMD2 Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 61612 шт: термін постачання 21-31 дні (днів) |
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RB520SM-30T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA EMD2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 10 V |
на замовлення 140292 шт: термін постачання 21-31 дні (днів) |
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RB521SM-30T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 200MA EMD2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA Current - Reverse Leakage @ Vr: 30 µA @ 10 V |
на замовлення 7605 шт: термін постачання 21-31 дні (днів) |
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RB521SM-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA EMD2Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: EMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA Current - Reverse Leakage @ Vr: 90 µA @ 40 V |
на замовлення 56526 шт: термін постачання 21-31 дні (днів) |
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RB751SM-40T2R | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 30MA SC79Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SC-79 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
на замовлення 33867 шт: термін постачання 21-31 дні (днів) |
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RB751VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 30V 30MA UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 1V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Current - Reverse Leakage @ Vr: 500 nA @ 30 V |
на замовлення 5691 шт: термін постачання 21-31 дні (днів) |
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RBQ10B65ATL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTTKY 65V 5A CPD |
на замовлення 4118 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RQ1E070RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 7A TSMT8Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V |
на замовлення 7987 шт: термін постачання 21-31 дні (днів) |
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RRF015P03TL | Rohm Semiconductor |
Description: MOSFET P-CH 30V 1.5A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
на замовлення 4909 шт: термін постачання 21-31 дні (днів) |
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RRL035P03TR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT6 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V |
на замовлення 6352 шт: термін постачання 21-31 дні (днів) |
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RSD100N10TL | Rohm Semiconductor |
Description: MOSFET N-CH 100V 10A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: CPT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RSD140P06TL | Rohm Semiconductor |
Description: MOSFET P-CH 60V 14A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V Power Dissipation (Max): 20W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RSE002N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RSU002N06T106 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA UMT3Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: UMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
на замовлення 7607 шт: термін постачання 21-31 дні (днів) |
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RU1C001UNTCL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 100MA UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: UMT3F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V |
на замовлення 10689 шт: термін постачання 21-31 дні (днів) |
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RUC002N05T116 | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
на замовлення 208457 шт: термін постачання 21-31 дні (днів) |
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RUF020N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2A TUMT3Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
на замовлення 86313 шт: термін постачання 21-31 дні (днів) |
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RUM001L02T2CL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 100MA VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VMT3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V |
на замовлення 187054 шт: термін постачання 21-31 дні (днів) |
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RW1A030APT2CR | Rohm Semiconductor |
Description: MOSFET P-CH 12V 3A 6WEMTPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RW1C025ZPT2CR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2.5A 6WEMTPackaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RYM002N05T2CL | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: VMT3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
на замовлення 555611 шт: термін постачання 21-31 дні (днів) |
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TFZGTR12B | Rohm Semiconductor |
Description: DIODE ZENER 12V 500MW TUMD2Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 12 Ohms Supplier Device Package: TUMD2 Part Status: Not For New Designs Power - Max: 500 mW Current - Reverse Leakage @ Vr: 200 nA @ 9 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TFZGTR15B | Rohm Semiconductor |
Description: DIODE ZENER 15V 500MW TUMD2 |
на замовлення 5129 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TFZGTR36B | Rohm Semiconductor |
Description: DIODE ZENER 36V 500MW TUMD2 |
на замовлення 2439 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TFZGTR6.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.2V 500MW TUMD2 |
на замовлення 5376 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TFZGTR7.5B | Rohm Semiconductor |
Description: DIODE ZENER 7.5V 500MW TUMD2 |
на замовлення 2393 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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TFZGTR9.1B | Rohm Semiconductor |
Description: DIODE ZENER 9.1V 500MW TUMD2 |
на замовлення 4739 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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UDZVTE-1710B | Rohm Semiconductor |
Description: DIODE ZENER 10V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 7 V |
на замовлення 46485 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-1711B | Rohm Semiconductor |
Description: DIODE ZENER 11V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
на замовлення 4945 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-1712B | Rohm Semiconductor |
Description: DIODE ZENER 12V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 9 V |
на замовлення 17655 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-1713B | Rohm Semiconductor |
Description: DIODE ZENER 13V 200MW UMD2 |
на замовлення 4332 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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UDZVTE-1715B | Rohm Semiconductor |
Description: DIODE ZENER 15V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 42 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
на замовлення 17643 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-1716B | Rohm Semiconductor |
Description: DIODE ZENER 16V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 50 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
на замовлення 2884 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-1718B | Rohm Semiconductor |
Description: DIODE ZENER 18V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 65 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 13 V |
на замовлення 51739 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-172.4B | Rohm Semiconductor |
Description: DIODE ZENER 2.4V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.4 V Supplier Device Package: UMD2 Power - Max: 200 mW |
на замовлення 1563 шт: термін постачання 21-31 дні (днів) |
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UDZVTE-1720B | Rohm Semiconductor |
Description: DIODE ZENER 20V 200MW UMD2Packaging: Cut Tape (CT) Package / Case: SC-90, SOD-323F Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: UMD2 Power - Max: 200 mW Current - Reverse Leakage @ Vr: 100 nA @ 15 V |
на замовлення 10801 шт: термін постачання 21-31 дні (днів) |
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| 2SC4617EBTLQ |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 2192 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 35+ | 9.38 грн |
| 100+ | 5.78 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.49 грн |
| 2SC4617EBTLR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Description: TRANS NPN 50V 0.15A EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
на замовлення 5862 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 35+ | 9.38 грн |
| 100+ | 5.78 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.49 грн |
| 2SCR523UBTL |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 50V 0.1A UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Description: TRANS NPN 50V 0.1A UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Frequency - Transition: 350MHz
Supplier Device Package: UMT3F
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
на замовлення 30785 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.28 грн |
| 39+ | 8.33 грн |
| 100+ | 5.14 грн |
| 500+ | 3.51 грн |
| 1000+ | 3.08 грн |
| BA8391G-TR |
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Виробник: Rohm Semiconductor
Description: IC COMPARATOR OPEN 5-SSOP
Description: IC COMPARATOR OPEN 5-SSOP
на замовлення 1974 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD11600NUX-E2 |
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Виробник: Rohm Semiconductor
Description: IC USB SWITCH DPDT 10-VSON
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6Ohm
Supplier Device Package: VSON010X3020
Voltage - Supply, Single (V+): 2.5V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
Description: IC USB SWITCH DPDT 10-VSON
Features: USB 2.0
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 6Ohm
Supplier Device Package: VSON010X3020
Voltage - Supply, Single (V+): 2.5V ~ 5.5V
Switch Circuit: DPDT
Part Status: Active
Number of Channels: 1
на замовлення 13886 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.54 грн |
| 10+ | 48.60 грн |
| 25+ | 43.86 грн |
| 100+ | 36.25 грн |
| 250+ | 33.90 грн |
| 500+ | 32.49 грн |
| 1000+ | 30.81 грн |
| BH1730FVC-TR |
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Виробник: Rohm Semiconductor
Description: SENSOR OPT 600NM AMBIENT 6WSOF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Lead Exposed Pad
Wavelength: 600nm
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Supplier Device Package: 6-WSOF
Proximity Detection: No
Part Status: Active
Description: SENSOR OPT 600NM AMBIENT 6WSOF
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Lead Exposed Pad
Wavelength: 600nm
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 3.6V
Supplier Device Package: 6-WSOF
Proximity Detection: No
Part Status: Active
на замовлення 4875 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 238.50 грн |
| 5+ | 205.24 грн |
| 10+ | 196.18 грн |
| 25+ | 173.88 грн |
| 50+ | 166.92 грн |
| 100+ | 160.54 грн |
| 500+ | 145.29 грн |
| 1000+ | 141.34 грн |
| BR24T02FVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 2KBIT I2C 400KHZ 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 2Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 256 x 8
DigiKey Programmable: Not Verified
на замовлення 2957 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.33 грн |
| 25+ | 28.17 грн |
| 50+ | 26.27 грн |
| 100+ | 23.34 грн |
| 250+ | 23.05 грн |
| 500+ | 22.33 грн |
| 1000+ | 21.73 грн |
| BR24T16FVM-WTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 16KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 16KBIT I2C 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-MSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
на замовлення 1107 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.55 грн |
| 13+ | 26.93 грн |
| 25+ | 24.97 грн |
| 50+ | 23.33 грн |
| 100+ | 20.72 грн |
| 250+ | 20.46 грн |
| 500+ | 19.82 грн |
| 1000+ | 19.29 грн |
| BU18TD3WG-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 1.8V 200MA 5-SSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 5-SSOP
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 70dB (1kHz)
Voltage Dropout (Max): 0.6V @ 200mA
Protection Features: Over Current, Over Temperature
на замовлення 4053 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 66.34 грн |
| 10+ | 38.65 грн |
| 25+ | 31.93 грн |
| 100+ | 22.83 грн |
| 250+ | 19.33 грн |
| 500+ | 17.17 грн |
| 1000+ | 15.11 грн |
| DAN222WMTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Description: DIODE ARRAY GP 80V 100MA EMD3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: EMD3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
на замовлення 6474 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.15 грн |
| 28+ | 11.81 грн |
| 100+ | 6.52 грн |
| 500+ | 5.05 грн |
| 1000+ | 4.46 грн |
| DTC043ZMT2L |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: VMT3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 57755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 29+ | 11.40 грн |
| 100+ | 7.10 грн |
| 500+ | 4.89 грн |
| 1000+ | 4.31 грн |
| 2000+ | 3.83 грн |
| EDZVT2R15B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 9464 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.60 грн |
| 44+ | 7.36 грн |
| 119+ | 2.73 грн |
| 500+ | 2.52 грн |
| 1000+ | 2.49 грн |
| EDZVT2R16B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 23867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.48 грн |
| 28+ | 11.56 грн |
| 100+ | 7.19 грн |
| 500+ | 4.43 грн |
| 1000+ | 3.54 грн |
| 2000+ | 3.37 грн |
| EDZVT2R18B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Description: DIODE ZENER 18V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
на замовлення 6448 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 43+ | 7.60 грн |
| 100+ | 3.36 грн |
| 500+ | 3.02 грн |
| 1000+ | 2.29 грн |
| 2000+ | 2.13 грн |
| EDZVT2R3.6B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 3.6V 150MW EMD2
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 3.6V 150MW EMD2
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
на замовлення 31433 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.60 грн |
| 46+ | 7.04 грн |
| 125+ | 2.59 грн |
| 500+ | 2.29 грн |
| 1000+ | 2.16 грн |
| EDZVT2R5.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.1V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Description: DIODE ZENER 5.1V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
на замовлення 62307 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 12.60 грн |
| 46+ | 7.12 грн |
| 100+ | 5.30 грн |
| 500+ | 3.80 грн |
| 1000+ | 2.29 грн |
| 2000+ | 2.16 грн |
| EDZVT2R5.6B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 5.6V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Description: DIODE ZENER 5.6V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
на замовлення 3209 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 15.96 грн |
| 35+ | 9.30 грн |
| 100+ | 5.89 грн |
| 500+ | 3.87 грн |
| 1000+ | 2.62 грн |
| 2000+ | 2.29 грн |
| EDZVT2R6.2B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: DIODE ZENER 6.2V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
на замовлення 5758 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 43+ | 7.60 грн |
| 100+ | 3.36 грн |
| 500+ | 3.02 грн |
| 1000+ | 2.16 грн |
| 2000+ | 2.11 грн |
| EDZVT2R6.8B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.8V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Description: DIODE ZENER 6.8V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
на замовлення 46237 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.67 грн |
| 22+ | 15.12 грн |
| 100+ | 7.41 грн |
| 500+ | 5.79 грн |
| 1000+ | 4.03 грн |
| 2000+ | 3.49 грн |
| EDZVT2R7.5B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
Description: DIODE ZENER 7.5V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 4 V
на замовлення 20370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.56 грн |
| 66+ | 4.93 грн |
| 150+ | 2.17 грн |
| 500+ | 1.97 грн |
| 1000+ | 1.51 грн |
| 2000+ | 1.34 грн |
| EDZVT2R9.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.1V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Description: DIODE ZENER 9.1V 150MW EMD2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: EMD2
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
на замовлення 2615 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.83 грн |
| 23+ | 14.07 грн |
| 100+ | 6.88 грн |
| 500+ | 5.39 грн |
| 1000+ | 3.74 грн |
| 2000+ | 3.24 грн |
| QS8J4TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Description: MOSFET 2P-CH 30V 4A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 550mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
на замовлення 3755 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.25 грн |
| 10+ | 72.54 грн |
| 100+ | 48.47 грн |
| 500+ | 35.81 грн |
| 1000+ | 32.69 грн |
| RAF040P01TCL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 4A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V
Description: MOSFET P-CH 12V 4A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 6 V
на замовлення 8663 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.78 грн |
| 10+ | 35.26 грн |
| 100+ | 22.80 грн |
| 500+ | 16.35 грн |
| 1000+ | 14.73 грн |
| RB168M-40TR |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A PMDU
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 A
Current - Reverse Leakage @ Vr: 550 nA @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RB501VM-40TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 40V 100MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 61612 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.51 грн |
| 21+ | 15.45 грн |
| 100+ | 7.56 грн |
| 500+ | 5.92 грн |
| 1000+ | 4.11 грн |
| RB520SM-30T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Description: DIODE SCHOTTKY 30V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 140292 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 19.31 грн |
| 31+ | 10.59 грн |
| 100+ | 6.61 грн |
| 500+ | 4.55 грн |
| 1000+ | 3.94 грн |
| 2000+ | 3.14 грн |
| RB521SM-30T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Description: DIODE SCHOTTKY 30V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 200 mA
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
на замовлення 7605 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.80 грн |
| 32+ | 10.19 грн |
| 100+ | 6.55 грн |
| 500+ | 4.51 грн |
| 1000+ | 3.86 грн |
| 2000+ | 3.53 грн |
| RB521SM-40T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
Description: DIODE SCHOTTKY 40V 200MA EMD2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: EMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 40 V
на замовлення 56526 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.83 грн |
| 26+ | 12.45 грн |
| 100+ | 7.77 грн |
| 500+ | 5.38 грн |
| 1000+ | 4.76 грн |
| 2000+ | 4.24 грн |
| RB751SM-40T2R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 30MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
на замовлення 33867 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.51 грн |
| 24+ | 13.50 грн |
| 100+ | 8.46 грн |
| 500+ | 5.86 грн |
| 1000+ | 5.18 грн |
| 2000+ | 4.62 грн |
| RB751VM-40TE-17 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 30V 30MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Description: DIODE SCHOTTKY 30V 30MA UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
на замовлення 5691 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.71 грн |
| 18+ | 18.60 грн |
| 100+ | 9.37 грн |
| 500+ | 7.17 грн |
| 1000+ | 5.32 грн |
| RBQ10B65ATL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 65V 5A CPD
Description: DIODE ARRAY SCHOTTKY 65V 5A CPD
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RQ1E070RPTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
Description: MOSFET P-CH 30V 7A TSMT8
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 7A, 10V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TSMT8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 10 V
на замовлення 7987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.57 грн |
| 10+ | 82.73 грн |
| 100+ | 64.50 грн |
| 500+ | 50.00 грн |
| 1000+ | 39.48 грн |
| RRF015P03TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET P-CH 30V 1.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
на замовлення 4909 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 48.71 грн |
| 12+ | 29.35 грн |
| 100+ | 14.96 грн |
| 500+ | 13.16 грн |
| 1000+ | 11.91 грн |
| RRL035P03TR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Description: MOSFET P-CH 30V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TUMT6
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
на замовлення 6352 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.39 грн |
| 12+ | 29.35 грн |
| 100+ | 19.38 грн |
| 500+ | 13.82 грн |
| 1000+ | 12.42 грн |
| RSD100N10TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 100V 10A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET N-CH 100V 10A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 133mOhm @ 5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: CPT3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| RSD140P06TL |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 60V 14A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
Description: MOSFET P-CH 60V 14A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RSE002N06TL |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Description: MOSFET N-CH 60V 250MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| RSU002N06T106 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Description: MOSFET N-CH 60V 250MA UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: UMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
на замовлення 7607 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.28 грн |
| 34+ | 9.78 грн |
| 100+ | 6.53 грн |
| 500+ | 4.69 грн |
| 1000+ | 4.20 грн |
| RU1C001UNTCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 100MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: UMT3F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
Description: MOSFET N-CH 20V 100MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: UMT3F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
на замовлення 10689 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.83 грн |
| 26+ | 12.86 грн |
| 100+ | 5.22 грн |
| RUC002N05T116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
на замовлення 208457 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.48 грн |
| 31+ | 10.67 грн |
| 100+ | 6.65 грн |
| 500+ | 4.58 грн |
| 1000+ | 4.04 грн |
| RUF020N02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: MOSFET N-CH 20V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
на замовлення 86313 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 31.07 грн |
| 13+ | 25.39 грн |
| 100+ | 18.96 грн |
| 500+ | 13.98 грн |
| 1000+ | 10.80 грн |
| RUM001L02T2CL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 100MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
Description: MOSFET N-CH 20V 100MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 100mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7.1 pF @ 10 V
на замовлення 187054 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.83 грн |
| 26+ | 12.62 грн |
| 100+ | 7.88 грн |
| 500+ | 5.45 грн |
| 1000+ | 4.82 грн |
| 2000+ | 4.29 грн |
| RW1A030APT2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 3A 6WEMT
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
Description: MOSFET P-CH 12V 3A 6WEMT
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V
товару немає в наявності
В кошику
од. на суму грн.
| RW1C025ZPT2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A 6WEMT
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET P-CH 20V 2.5A 6WEMT
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RYM002N05T2CL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: VMT3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CH 50V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: VMT3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
на замовлення 555611 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.39 грн |
| 19+ | 17.31 грн |
| 100+ | 10.89 грн |
| 500+ | 7.62 грн |
| 1000+ | 6.77 грн |
| 2000+ | 6.06 грн |
| TFZGTR12B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 500MW TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: TUMD2
Part Status: Not For New Designs
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
Description: DIODE ZENER 12V 500MW TUMD2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 12 Ohms
Supplier Device Package: TUMD2
Part Status: Not For New Designs
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 200 nA @ 9 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZGTR15B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 500MW TUMD2
Description: DIODE ZENER 15V 500MW TUMD2
на замовлення 5129 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZGTR36B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 500MW TUMD2
Description: DIODE ZENER 36V 500MW TUMD2
на замовлення 2439 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZGTR6.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.2V 500MW TUMD2
Description: DIODE ZENER 6.2V 500MW TUMD2
на замовлення 5376 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZGTR7.5B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 7.5V 500MW TUMD2
Description: DIODE ZENER 7.5V 500MW TUMD2
на замовлення 2393 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| TFZGTR9.1B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 9.1V 500MW TUMD2
Description: DIODE ZENER 9.1V 500MW TUMD2
на замовлення 4739 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| UDZVTE-1710B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 10V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Description: DIODE ZENER 10V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
на замовлення 46485 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 40+ | 8.09 грн |
| 100+ | 4.16 грн |
| 500+ | 3.68 грн |
| 1000+ | 3.47 грн |
| UDZVTE-1711B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 11V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 11V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 4945 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 40+ | 8.09 грн |
| 100+ | 3.86 грн |
| 500+ | 3.55 грн |
| 1000+ | 3.47 грн |
| UDZVTE-1712B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 12V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Description: DIODE ZENER 12V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 17655 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.92 грн |
| 43+ | 7.60 грн |
| 100+ | 5.06 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.23 грн |
| UDZVTE-1713B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 13V 200MW UMD2
Description: DIODE ZENER 13V 200MW UMD2
на замовлення 4332 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| UDZVTE-1715B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 15V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 42 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
на замовлення 17643 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.83 грн |
| 24+ | 13.91 грн |
| 100+ | 6.80 грн |
| 500+ | 5.33 грн |
| 1000+ | 3.70 грн |
| UDZVTE-1716B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 16V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: DIODE ZENER 16V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 2884 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.76 грн |
| 40+ | 8.17 грн |
| 100+ | 3.87 грн |
| 500+ | 3.56 грн |
| 1000+ | 3.49 грн |
| UDZVTE-1718B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 18V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
Description: DIODE ZENER 18V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 13 V
на замовлення 51739 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.67 грн |
| 22+ | 14.88 грн |
| 100+ | 7.28 грн |
| 500+ | 5.69 грн |
| 1000+ | 3.96 грн |
| UDZVTE-172.4B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 2.4V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Supplier Device Package: UMD2
Power - Max: 200 mW
Description: DIODE ZENER 2.4V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.4 V
Supplier Device Package: UMD2
Power - Max: 200 mW
на замовлення 1563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.80 грн |
| 34+ | 9.62 грн |
| 100+ | 5.96 грн |
| 500+ | 4.09 грн |
| 1000+ | 3.61 грн |
| UDZVTE-1720B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 20V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Description: DIODE ZENER 20V 200MW UMD2
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: UMD2
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
на замовлення 10801 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.92 грн |
| 45+ | 7.28 грн |
| 100+ | 3.47 грн |
| 500+ | 3.19 грн |
| 1000+ | 3.12 грн |




























