Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (106374) > Сторінка 907 з 1773
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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RBQ30NS100AFHTL | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 100V 30A LPDSCurrent - Reverse Leakage @ Vr: 200 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: LPDS Current - Average Rectified (Io) (per Diode): 30A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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RBQ30T45ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO220FNCurrent - Reverse Leakage @ Vr: 450 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBQ30T45ANZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 45V 15A TO220FNCurrent - Reverse Leakage @ Vr: 450 µA @ 45 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 45 V Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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SCT3120AW7TL | Rohm Semiconductor |
Description: SICFET N-CH 650V 21A TO263-7Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +22V, -4V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 5.6V @ 3.33mA Power Dissipation (Max): 100W Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECPackaging: Tape & Reel (TR) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLR2377YFVM-CTR | Rohm Semiconductor |
Description: TLR SERIES, AUTOMOTIVE HIGH PRECPackaging: Cut Tape (CT) Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Output Type: Push-Pull, Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 1.245mA Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Supplier Device Package: 8-MSOP Grade: Automotive Part Status: Active Number of Circuits: 2 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
на замовлення 1885 шт: термін постачання 21-31 дні (днів) |
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RBE2EA20ATR | Rohm Semiconductor |
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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RBE2EA20ATR | Rohm Semiconductor |
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S |
на замовлення 1952 шт: термін постачання 21-31 дні (днів) |
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RB551VM-40TE-17 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 200MA UMD2Current - Reverse Leakage @ Vr: 300 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 125°C Supplier Device Package: UMD2 Current - Average Rectified (Io): 200mA Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Packaging: Cut Tape (CT) |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
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BR25G320FVM-3GTR | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BR25G320FVM-3GTR | Rohm Semiconductor |
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOPDigiKey Programmable: Not Verified Memory Organization: 4K x 8 Memory Interface: SPI Write Cycle Time - Word, Page: 5ms Supplier Device Package: 8-MSOP Memory Format: EEPROM Clock Frequency: 20 MHz Technology: EEPROM Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 32Kbit Mounting Type: Surface Mount Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Packaging: Cut Tape (CT) |
на замовлення 2707 шт: термін постачання 21-31 дні (днів) |
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R6020KNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Power Dissipation (Max): 68W (Tc) Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 1mA |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
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R6020ENZ4C13 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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R6020JNZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFPower Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bag Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 7V @ 3.5mA |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020ENZC17 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PFInput Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
на замовлення 296 шт: термін постачання 21-31 дні (днів) |
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R6020FNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A LPTInput Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Not For New Designs Supplier Device Package: LPTS Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 304W (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020KNZ1C9 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO247Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 231W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020JNZC8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3PF Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 7V @ 3.5mA Power Dissipation (Max): 76W (Tc) Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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R6020ANZFL1C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4.15V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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R6020ANZ8U7C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4.15V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| R6020ENZM12C8 | Rohm Semiconductor |
Description: MOSFET N-CH 600V 20A TO3Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB095T-90NZC9 | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 90V 6A TO220FNCurrent - Reverse Leakage @ Vr: 150 µA @ 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 90 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: TO-220FN Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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BD6346FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 20SSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD6346FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 20SSOP |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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BD63441AFU-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD63441AFU-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP |
на замовлення 4812 шт: термін постачання 21-31 дні (днів) |
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BD6345FV-E2 | Rohm Semiconductor |
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD8621EFV-E2 | Rohm Semiconductor |
Description: IC REG CTRLR TV 1OUT HTSSOP-B20 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD868D0MUF-CE2 | Rohm Semiconductor |
Description: PMIC FOR AUTOMOTIVE CAMERA. THEPackaging: Tape & Reel (TR) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4V ~ 18V Applications: Camera Supplier Device Package: VQFN20FV3535 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD868D0MUF-CE2 | Rohm Semiconductor |
Description: PMIC FOR AUTOMOTIVE CAMERA. THEPackaging: Cut Tape (CT) Package / Case: 20-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4V ~ 18V Applications: Camera Supplier Device Package: VQFN20FV3535 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1950 шт: термін постачання 21-31 дні (днів) |
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BD86123AEFJ-E2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 8HTSOP-JVoltage - Output (Min/Fixed): 0.8V Voltage - Input (Min): 4.5V Voltage - Output (Max): 14.4V Synchronous Rectifier: Yes Supplier Device Package: 8-HTSOP-J Topology: Buck Voltage - Input (Max): 18V Frequency - Switching: 550kHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 3A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Adjustable Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD8649EFV-E2 | Rohm Semiconductor |
Description: IC REG BUCK ADJ 3A 20HTSSOP-B |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD8668GW-E2 | Rohm Semiconductor |
Description: IC BATT CHG LI-ION UCSP75M2Current - Charging: Constant - Programmable Battery Pack Voltage: 8.4V Voltage - Supply (Max): 5.5V Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit Programmable Features: Current, Voltage Supplier Device Package: 20-UCSP75M2 (2.2x2.2) Battery Chemistry: Lithium Ion Operating Temperature: -30°C ~ 85°C (TA) Interface: USB Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 20-VFBGA, CSPBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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R6511ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 11A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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R6511ENJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 11A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: LPTS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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R6511KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 11A LPTSPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 320µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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R6511KNJTL | Rohm Semiconductor |
Description: MOSFET N-CH 650V 11A LPTSPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 5V @ 320µA Supplier Device Package: LPTS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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R6511END3TL1 | Rohm Semiconductor |
Description: 650V 11A TO-252, LOW-NOISE POWERPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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R6511END3TL1 | Rohm Semiconductor |
Description: 650V 11A TO-252, LOW-NOISE POWERPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V Power Dissipation (Max): 124W (Tc) Vgs(th) (Max) @ Id: 4V @ 320µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
на замовлення 3267 шт: термін постачання 21-31 дні (днів) |
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BZX84C33VLYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 33V 250MW SOT23Tolerance: ±6.06% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BZX84C33VLYFHT116 | Rohm Semiconductor |
Description: DIODE ZENER 33V 250MW SOT23Tolerance: ±6.06% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 80 Ohms Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Power - Max: 250 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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RQ5H025TNTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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RQ5H025TNTL | Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
на замовлення 7577 шт: термін постачання 21-31 дні (днів) |
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2SAR512RHZGTL | Rohm Semiconductor |
Description: TRANS PNP 30V 2A TSMT3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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2SAR512RHZGTL | Rohm Semiconductor |
Description: TRANS PNP 30V 2A TSMT3 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB061QS-20T18R | Rohm Semiconductor |
Description: DIODE STANDARD 20V 2A SMD1006Current - Reverse Leakage @ Vr: 200 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: SMD1006 Current - Average Rectified (Io): 2A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 18000 шт В кошику од. на суму грн. | ||||||||||||||||
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RB061QS-20T18R | Rohm Semiconductor |
Description: DIODE STANDARD 20V 2A SMD1006Current - Reverse Leakage @ Vr: 200 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: SMD1006 Current - Average Rectified (Io): 2A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Packaging: Cut Tape (CT) |
на замовлення 10333 шт: термін постачання 21-31 дні (днів) |
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| ML610Q172-101GAZWAX | Rohm Semiconductor |
Description: IC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BD5423MUV-E2 | Rohm Semiconductor |
Description: IC AMP D STEREO 17W VQFN048V7070 Supplier Device Package: VQFN048V7070 Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm Voltage - Supply: 10V ~ 16.5V Operating Temperature: -40°C ~ 85°C (TA) Type: Class D Mounting Type: Surface Mount Output Type: 2-Channel (Stereo) Package / Case: 48-VFQFN Exposed Pad Features: Depop, Mute, Short-Circuit and Thermal Protection Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
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BDE1204G-TR | Rohm Semiconductor |
Description: THERMOSTAT 120DEGC ACT LOW 5SSOP |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BDE1250G-TR | Rohm Semiconductor |
Description: THERMOSTAT 125DEGC ACT LOW 5SSOP Switching Temperature: 125°C Current - Supply: 16µA Operating Temperature: -30°C ~ 130°C Part Status: Obsolete Selectable Hysteresis: No Trip Temperature Threshold: Hot Packaging: Tape & Reel (TR) Output Type: Open Drain Package / Case: SC-74A, SOT-753 Output Function: /OverTemp, VTemp Supplier Device Package: 5-SSOP Current - Output (Max): 5mA Voltage - Supply: 2.9 V ~ 5.5 V Accuracy: ±4°C Output: Active Low Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BDE1000G-TR | Rohm Semiconductor |
Description: THERMOSTAT 100DEGC ACT LOW 5SSOP Current - Supply: 16µA Operating Temperature: -30°C ~ 130°C Accuracy: ±4°C Output: Active Low Mounting Type: Surface Mount Output Type: Open Drain Package / Case: SC-74A, SOT-753 Packaging: Tape & Reel (TR) Voltage - Supply: 2.9 V ~ 5.5 V Selectable Hysteresis: No Trip Temperature Threshold: Hot Output Function: /OverTemp, VTemp Supplier Device Package: 5-SSOP Current - Output (Max): 5mA Switching Temperature: 100°C |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMF17VTFTR | Rohm Semiconductor |
Description: TRANSIENT VOLTAGE SUPPRESSOR (AEPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 17V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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SMF17VTFTR | Rohm Semiconductor |
Description: TRANSIENT VOLTAGE SUPPRESSOR (AEPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 17V (Max) Supplier Device Package: PMDU Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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RB098BM100FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 100V 6A TO-252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 11.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Operating Temperature - Junction: 150°C (Max) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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RB098BM100FHTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOT 100V 6A TO-252Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 3 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-252 Current - Average Rectified (Io) (per Diode): 6A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Reverse Recovery Time (trr): 11.4 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 3656 шт: термін постачання 21-31 дні (днів) |
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BD7683FJ-LBE2 | Rohm Semiconductor |
Description: IC OFFLINE SWITCH FLYBACK 8SOPJVoltage - Start Up: 19.5 V Fault Protection: Current Limiting, Over Load, Over Voltage Supplier Device Package: 8-SOP-J Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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BD7683FJ-LBE2 | Rohm Semiconductor |
Description: IC OFFLINE SWITCH FLYBACK 8SOPJVoltage - Start Up: 19.5 V Fault Protection: Current Limiting, Over Load, Over Voltage Supplier Device Package: 8-SOP-J Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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BD7683FJ-LBE2 | Rohm Semiconductor |
Description: IC OFFLINE SWITCH FLYBACK 8SOPJVoltage - Start Up: 19.5 V Fault Protection: Current Limiting, Over Load, Over Voltage Supplier Device Package: 8-SOP-J Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 120kHz Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BD7685FJ-LBE2 | Rohm Semiconductor |
Description: IC OFFLINE SWITCH QUASI RES CTRLOutput Isolation: Isolated Internal Switch(s): No Frequency - Switching: 30kHz ~ 120kHz Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Control Features: Frequency Control, Soft Start Voltage - Start Up: 19.5 V Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SOP-J Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V Topology: Flyback |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| RBQ30NS100AFHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOTT 100V 30A LPDS
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: LPDS
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.06 грн |
| 10+ | 169.90 грн |
| 100+ | 137.45 грн |
| 500+ | 114.67 грн |
| RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RBQ30T45ANZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR SCHOTT 45V 15A TO220FN
Current - Reverse Leakage @ Vr: 450 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCT3120AW7TL |
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Виробник: Rohm Semiconductor
Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 650V 21A TO263-7
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +22V, -4V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
Power Dissipation (Max): 100W
Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Tape & Reel (TR)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLR2377YFVM-CTR |
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Виробник: Rohm Semiconductor
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: TLR SERIES, AUTOMOTIVE HIGH PREC
Packaging: Cut Tape (CT)
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Output Type: Push-Pull, Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 1.245mA
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Supplier Device Package: 8-MSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
на замовлення 1885 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 194.39 грн |
| 10+ | 117.60 грн |
| 25+ | 99.48 грн |
| 100+ | 74.18 грн |
| 250+ | 64.76 грн |
| 500+ | 58.96 грн |
| 1000+ | 53.22 грн |
| RBE2EA20ATR |
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Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| RBE2EA20ATR |
![]() |
Виробник: Rohm Semiconductor
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
Description: HIGH EFFICIENCY TYPE, 20V, 2A, S
на замовлення 1952 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.60 грн |
| 10+ | 39.78 грн |
| 100+ | 29.66 грн |
| 500+ | 21.87 грн |
| 1000+ | 16.90 грн |
| RB551VM-40TE-17 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 40V 200MA UMD2
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 125°C
Supplier Device Package: UMD2
Current - Average Rectified (Io): 200mA
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Packaging: Cut Tape (CT)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 29.78 грн |
| 16+ | 19.93 грн |
| 100+ | 10.07 грн |
| 500+ | 7.71 грн |
| 1000+ | 5.72 грн |
| BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BR25G320FVM-3GTR |
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Виробник: Rohm Semiconductor
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
Description: IC EEPROM 32KBIT SPI 20MHZ 8MSOP
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Memory Interface: SPI
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-MSOP
Memory Format: EEPROM
Clock Frequency: 20 MHz
Technology: EEPROM
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Packaging: Cut Tape (CT)
на замовлення 2707 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 39.97 грн |
| 10+ | 36.76 грн |
| 25+ | 35.81 грн |
| 50+ | 32.90 грн |
| 100+ | 32.19 грн |
| 250+ | 31.23 грн |
| 500+ | 30.01 грн |
| 1000+ | 29.30 грн |
| R6020KNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Power Dissipation (Max): 68W (Tc)
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 1mA
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.15 грн |
| R6020ENZ4C13 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Description: MOSFET N-CH 600V 20A TO247
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 487.53 грн |
| 30+ | 268.07 грн |
| 120+ | 223.74 грн |
| 510+ | 179.47 грн |
| R6020JNZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Description: MOSFET N-CH 600V 20A TO3PF
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bag
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.50 грн |
| 10+ | 206.58 грн |
| R6020ENZC17 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 20A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 422.48 грн |
| 30+ | 220.95 грн |
| 120+ | 205.52 грн |
| R6020FNJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 20A LPT
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: LPTS
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 304W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| R6020KNZ1C9 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 20A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| R6020JNZC8 |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 600V 20A TO3PF
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 7V @ 3.5mA
Power Dissipation (Max): 76W (Tc)
Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 632.54 грн |
| 10+ | 415.43 грн |
| R6020ANZFL1C8 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| R6020ANZ8U7C8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Description: MOSFET N-CH 600V 20A TO3
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
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В кошику
од. на суму грн.
| R6020ENZM12C8 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 20A TO3
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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| RB095T-90NZC9 |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR SCHOTT 90V 6A TO220FN
Current - Reverse Leakage @ Vr: 150 µA @ 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 90 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: TO-220FN
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 147.36 грн |
| 50+ | 114.11 грн |
| 100+ | 93.89 грн |
| 500+ | 74.56 грн |
| 1000+ | 63.26 грн |
| BD6346FV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Description: IC MOTOR DRIVER 20SSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD6346FV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 20SSOP
Description: IC MOTOR DRIVER 20SSOP
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 293.15 грн |
| 10+ | 253.46 грн |
| 25+ | 239.63 грн |
| 100+ | 194.90 грн |
| 250+ | 184.91 грн |
| 500+ | 165.92 грн |
| 1000+ | 137.64 грн |
| BD63441AFU-E2 |
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Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD63441AFU-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
Description: IC MOTOR DRIVER 5.5V-16V 20SSOP
на замовлення 4812 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 264.93 грн |
| 10+ | 228.70 грн |
| 25+ | 216.20 грн |
| 100+ | 175.85 грн |
| 250+ | 166.84 грн |
| 500+ | 149.70 грн |
| 1000+ | 124.18 грн |
| BD6345FV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
Description: IC MOTOR DRIVER 5.5V-17V 20SSOP
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD8621EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG CTRLR TV 1OUT HTSSOP-B20
Description: IC REG CTRLR TV 1OUT HTSSOP-B20
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD868D0MUF-CE2 |
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Виробник: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD868D0MUF-CE2 |
![]() |
Виробник: Rohm Semiconductor
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
Description: PMIC FOR AUTOMOTIVE CAMERA. THE
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4V ~ 18V
Applications: Camera
Supplier Device Package: VQFN20FV3535
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 268.06 грн |
| 10+ | 194.66 грн |
| 25+ | 178.82 грн |
| 100+ | 151.54 грн |
| 250+ | 143.81 грн |
| BD86123AEFJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HTSOP-J
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG BUCK ADJ 3A 8HTSOP-J
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4.5V
Voltage - Output (Max): 14.4V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HTSOP-J
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 550kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 3A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
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В кошику
од. на суму грн.
| BD8649EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJ 3A 20HTSSOP-B
Description: IC REG BUCK ADJ 3A 20HTSSOP-B
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD8668GW-E2 |
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Виробник: Rohm Semiconductor
Description: IC BATT CHG LI-ION UCSP75M2
Current - Charging: Constant - Programmable
Battery Pack Voltage: 8.4V
Voltage - Supply (Max): 5.5V
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Programmable Features: Current, Voltage
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Battery Chemistry: Lithium Ion
Operating Temperature: -30°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-VFBGA, CSPBGA
Packaging: Tape & Reel (TR)
Description: IC BATT CHG LI-ION UCSP75M2
Current - Charging: Constant - Programmable
Battery Pack Voltage: 8.4V
Voltage - Supply (Max): 5.5V
Fault Protection: Over Current, Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Programmable Features: Current, Voltage
Supplier Device Package: 20-UCSP75M2 (2.2x2.2)
Battery Chemistry: Lithium Ion
Operating Temperature: -30°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-VFBGA, CSPBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| R6511ENJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6511ENJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 318.23 грн |
| 10+ | 275.04 грн |
| R6511KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| R6511KNJTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
Description: MOSFET N-CH 650V 11A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 5V @ 320µA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
на замовлення 90 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 286.09 грн |
| 10+ | 231.49 грн |
| R6511END3TL1 |
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Виробник: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 81.88 грн |
| R6511END3TL1 |
![]() |
Виробник: Rohm Semiconductor
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: 650V 11A TO-252, LOW-NOISE POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 4V @ 320µA
Supplier Device Package: TO-252
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
на замовлення 3267 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 232.01 грн |
| 10+ | 159.34 грн |
| 100+ | 111.12 грн |
| 500+ | 84.96 грн |
| 1000+ | 78.75 грн |
| BZX84C33VLYFHT116 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 4.66 грн |
| BZX84C33VLYFHT116 |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
Description: DIODE ZENER 33V 250MW SOT23
Tolerance: ±6.06%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Power - Max: 250 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| RQ5H025TNTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 13.88 грн |
| 6000+ | 12.28 грн |
| RQ5H025TNTL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Description: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
на замовлення 7577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.00 грн |
| 10+ | 34.64 грн |
| 100+ | 22.45 грн |
| 500+ | 16.14 грн |
| 1000+ | 14.56 грн |
| 2SAR512RHZGTL |
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Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
Description: TRANS PNP 30V 2A TSMT3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 25.33 грн |
| 2SAR512RHZGTL |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PNP 30V 2A TSMT3
Description: TRANS PNP 30V 2A TSMT3
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.84 грн |
| 10+ | 55.55 грн |
| 100+ | 42.55 грн |
| 500+ | 31.57 грн |
| 1000+ | 25.26 грн |
| RB061QS-20T18R |
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Виробник: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 18000 шт
В кошику
од. на суму грн.
| RB061QS-20T18R |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 20V 2A SMD1006
Current - Reverse Leakage @ Vr: 200 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: SMD1006
Current - Average Rectified (Io): 2A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Packaging: Cut Tape (CT)
на замовлення 10333 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.25 грн |
| 11+ | 27.63 грн |
| 100+ | 17.72 грн |
| 500+ | 12.64 грн |
| 1000+ | 11.35 грн |
| 2000+ | 10.26 грн |
| 5000+ | 8.93 грн |
| ML610Q172-101GAZWAX |
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Виробник: Rohm Semiconductor
Description: IC
Description: IC
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В кошику
од. на суму грн.
| BD5423MUV-E2 |
Виробник: Rohm Semiconductor
Description: IC AMP D STEREO 17W VQFN048V7070
Supplier Device Package: VQFN048V7070
Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 16.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Mute, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
Description: IC AMP D STEREO 17W VQFN048V7070
Supplier Device Package: VQFN048V7070
Max Output Power x Channels @ Load: 17W x 2 @ 4Ohm
Voltage - Supply: 10V ~ 16.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: Class D
Mounting Type: Surface Mount
Output Type: 2-Channel (Stereo)
Package / Case: 48-VFQFN Exposed Pad
Features: Depop, Mute, Short-Circuit and Thermal Protection
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| BDE1204G-TR |
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Виробник: Rohm Semiconductor
Description: THERMOSTAT 120DEGC ACT LOW 5SSOP
Description: THERMOSTAT 120DEGC ACT LOW 5SSOP
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BDE1250G-TR |
Виробник: Rohm Semiconductor
Description: THERMOSTAT 125DEGC ACT LOW 5SSOP
Switching Temperature: 125°C
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Part Status: Obsolete
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Voltage - Supply: 2.9 V ~ 5.5 V
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
Description: THERMOSTAT 125DEGC ACT LOW 5SSOP
Switching Temperature: 125°C
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Part Status: Obsolete
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Packaging: Tape & Reel (TR)
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Voltage - Supply: 2.9 V ~ 5.5 V
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
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од. на суму грн.
| BDE1000G-TR |
Виробник: Rohm Semiconductor
Description: THERMOSTAT 100DEGC ACT LOW 5SSOP
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply: 2.9 V ~ 5.5 V
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Switching Temperature: 100°C
Description: THERMOSTAT 100DEGC ACT LOW 5SSOP
Current - Supply: 16µA
Operating Temperature: -30°C ~ 130°C
Accuracy: ±4°C
Output: Active Low
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
Voltage - Supply: 2.9 V ~ 5.5 V
Selectable Hysteresis: No
Trip Temperature Threshold: Hot
Output Function: /OverTemp, VTemp
Supplier Device Package: 5-SSOP
Current - Output (Max): 5mA
Switching Temperature: 100°C
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMF17VTFTR |
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Виробник: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SMF17VTFTR |
![]() |
Виробник: Rohm Semiconductor
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TRANSIENT VOLTAGE SUPPRESSOR (AE
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V (Max)
Supplier Device Package: PMDU
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.03 грн |
| 10+ | 38.49 грн |
| 100+ | 28.73 грн |
| 500+ | 21.19 грн |
| 1000+ | 16.37 грн |
| RB098BM100FHTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 29.28 грн |
| RB098BM100FHTL |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOT 100V 6A TO-252
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 11.4 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 3656 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 78.38 грн |
| 10+ | 58.04 грн |
| 100+ | 44.43 грн |
| 500+ | 32.81 грн |
| 1000+ | 29.95 грн |
| BD7683FJ-LBE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BD7683FJ-LBE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 73.66 грн |
| BD7683FJ-LBE2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC OFFLINE SWITCH FLYBACK 8SOPJ
Voltage - Start Up: 19.5 V
Fault Protection: Current Limiting, Over Load, Over Voltage
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 120kHz
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BD7685FJ-LBE2 |
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Виробник: Rohm Semiconductor
Description: IC OFFLINE SWITCH QUASI RES CTRL
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 30kHz ~ 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 19.5 V
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
Description: IC OFFLINE SWITCH QUASI RES CTRL
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 30kHz ~ 120kHz
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Control Features: Frequency Control, Soft Start
Voltage - Start Up: 19.5 V
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOP-J
Voltage - Supply (Vcc/Vdd): 15V ~ 27.5V
Topology: Flyback
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 81.04 грн |






























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