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1N4935 1N4935 EIC Semiconductor 371n4933_7.pdf Diode Switching 200V 1A 2-Pin DO-41
товар відсутній
1N4935 Diotec Semiconductor 1n4933.pdf Description: DIODE GEN PURP 200V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 1N4935 Diotec Semiconductor 1n4933.pdf Diode Switching 200V 1A 2-Pin DO-41 Ammo
товар відсутній
1N4935 1N4935 onsemi / Fairchild 1N4933_D-2307996.pdf Rectifiers 1.0a Rectifier Fast Recovery
товар відсутній
1N4935 1N4935 onsemi 1n4933-d.pdf Description: DIODE FAST DO41 200V 200NS 150C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 R0 1N4935 R0 Taiwan Semiconductor Rectifiers 1A,200V,200NS,SILAST,FAST RECTIFIER
товар відсутній
1N4935 R0 1N4935 R0 Taiwan Semiconductor 12611313940083281n493320series_f13.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 R0G 1N4935 R0G Taiwan Semiconductor 12611313940083281n493320series_f13.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 R0G 1N4935 R0G Taiwan Semiconductor Rectifiers 1A,200V,200NS FAST RECTIFIER
товар відсутній
1N4935-AP 1N4935-AP Micro Commercial Co 1N4933-1N4937%28DO-41%29.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/54 1N4935-E3/54 Vishay 1n4933.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935-E3/73 1N4935-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/73 1N4935-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/73 1N4935-E3/73 Vishay 1n4933.pdf Diode Switching 200V 1A 2-Pin DO-41 Ammo
товар відсутній
1N4935-T 1N4935-T Diodes Inc ds26002.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-T 1N4935-T Rectron ds26002.pdf Rectifiers DO 41 1A 200V 200ns
товар відсутній
1N4935-T 1N4935-T Rectron 1n4933-4937.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-TP 1N4935-TP Micro Commercial Co 1N4933-1N4937%28DO-41%29.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1N4935G Taiwan Semiconductor 1n4933-d.pdf 1N4933G SERIES_I2104.pdf Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G 1N4935G ON Semiconductor 1n4933-d.pdf Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G 1N4935G ON Semiconductor 1n4933-d.pdf Rectifier Diode Switching 200V 1A 300ns 2-Pin DO-41 Bag
товар відсутній
1N4935G 1N4935G Taiwan Semiconductor Corporation 1N4933G SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1N4935G ON Semiconductor 1n4933-d.pdf Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G A0G 1N4935G A0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G B0G 1N4935G B0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R0 1N4935G R0 Taiwan Semiconductor 1n4933g20series_f13.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R0G 1N4935G R0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R0G 1N4935G R0G Taiwan Semiconductor 1n4933gseries_i2104.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935G R0G 1N4935G R0G Taiwan Semiconductor 4981n4933g20series_f13.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R1G 1N4935G R1G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-B 1N4935G-B Rectron rect_s_a0002848374_1-2281424.pdf Rectifiers Vr/200V Io/1A BULK
товар відсутній
1N4935G-K 1N4935G-K Taiwan Semiconductor Corporation 1N4933G-K SERIES_B2104.pdf Description: 200NS, 1A, 200V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-K 1N4935G-K Taiwan Semiconductor 1N4933G-K SERIES_B2104.pdf Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-K A0G 1N4935G-K A0G Taiwan Semiconductor 1n4933g-k20series_b2104.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935G-K A0G 1N4935G-K A0G Taiwan Semiconductor Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-T 1N4935G-T Rectron 1n4933g-4937g.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935G-T 1N4935G-T Diodes Inc ds27002.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935G-T 1N4935G-T Diodes Incorporated ds27002.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-T 1N4935G-T Rectron rect_s_a0002848374_1-2281424.pdf Rectifiers DO 41 1A 200V 200ns GP
товар відсутній
1N4935GH 1N4935GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GH 1N4935GH Taiwan Semiconductor Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935GHA0G 1N4935GHA0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHB0G 1N4935GHB0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1N4935GHR0G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1N4935GHR0G Taiwan Semiconductor 1n4933gseries_i2104.pdf Rectifier Diode Switching 200V 1A 200ns Automotive 2-Pin DO-41 T/R
товар відсутній
1N4935GHR1G 1N4935GHR1G Taiwan Semiconductor Corporation 1N4933G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GL-T 1N4935GL-T Diodes Incorporated ds27002.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP 1N4935GP onsemi 1N4933GP - 37GP.pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-AP 1N4935GP-AP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP 1N4935GP-BP Micro Commercial Components 1n4933gp-1n4937gpdo-41.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Bulk
товар відсутній
1N4935GP-BP 1N4935GP-BP Micro Commercial Co 1N4933GP-1N4937GP(DO-41).pdf Description: Interface
Packaging: Bulk
Part Status: Active
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP Micro Commercial Components (MCC) 1N4933GP-1N4937GP(DO-41).pdf Rectifiers Fast Recovery Rectifiers
товар відсутній
1N4935GP-E3/54 1N4935GP-E3/54 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/54 1N4935GP-E3/54 Vishay 1n4933gp.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/54 1N4935GP-E3/54 Vishay 1n4933gp.pdf Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/73 1N4935GP-E3/73 Vishay 1n4933gp.pdf Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935GP-E3/73 1N4935GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/73 1N4935GP-E3/73 Vishay General Semiconductor 1n4933gp.pdf Rectifiers 1.0 Amp 200 Volt Glass Passivated
товар відсутній
1N4935GP-M3/54 1N4935GP-M3/54 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
1N4935 371n4933_7.pdf
1N4935
Виробник: EIC Semiconductor
Diode Switching 200V 1A 2-Pin DO-41
товар відсутній
1N4935 1n4933.pdf
Виробник: Diotec Semiconductor
Description: DIODE GEN PURP 200V 1A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AC (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 1n4933.pdf
1N4935
Виробник: Diotec Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 Ammo
товар відсутній
1N4935 1N4933_D-2307996.pdf
1N4935
Виробник: onsemi / Fairchild
Rectifiers 1.0a Rectifier Fast Recovery
товар відсутній
1N4935 1n4933-d.pdf
1N4935
Виробник: onsemi
Description: DIODE FAST DO41 200V 200NS 150C
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935 R0
1N4935 R0
Виробник: Taiwan Semiconductor
Rectifiers 1A,200V,200NS,SILAST,FAST RECTIFIER
товар відсутній
1N4935 R0 12611313940083281n493320series_f13.pdf
1N4935 R0
Виробник: Taiwan Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 R0G 12611313940083281n493320series_f13.pdf
1N4935 R0G
Виробник: Taiwan Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935 R0G
1N4935 R0G
Виробник: Taiwan Semiconductor
Rectifiers 1A,200V,200NS FAST RECTIFIER
товар відсутній
1N4935-AP 1N4933-1N4937%28DO-41%29.pdf
1N4935-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/54 1n4933.pdf
1N4935-E3/54
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935-E3/73 1n4933.pdf
1N4935-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/73 1n4933.pdf
1N4935-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935-E3/73 1n4933.pdf
1N4935-E3/73
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 Ammo
товар відсутній
1N4935-T ds26002.pdf
1N4935-T
Виробник: Diodes Inc
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-T ds26002.pdf
1N4935-T
Виробник: Rectron
Rectifiers DO 41 1A 200V 200ns
товар відсутній
1N4935-T 1n4933-4937.pdf
1N4935-T
Виробник: Rectron
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935-TP 1N4933-1N4937%28DO-41%29.pdf
1N4935-TP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1n4933-d.pdf 1N4933G SERIES_I2104.pdf
1N4935G
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G 1n4933-d.pdf
1N4935G
Виробник: ON Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G 1n4933-d.pdf
1N4935G
Виробник: ON Semiconductor
Rectifier Diode Switching 200V 1A 300ns 2-Pin DO-41 Bag
товар відсутній
1N4935G 1N4933G SERIES_I2104.pdf
1N4935G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G 1n4933-d.pdf
1N4935G
Виробник: ON Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 Bag
товар відсутній
1N4935G A0G 1N4933G%20SERIES_I2104.pdf
1N4935G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G B0G 1N4933G%20SERIES_I2104.pdf
1N4935G B0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R0 1n4933g20series_f13.pdf
1N4935G R0
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R0G 1N4933G%20SERIES_I2104.pdf
1N4935G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G R0G 1n4933gseries_i2104.pdf
1N4935G R0G
Виробник: Taiwan Semiconductor
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935G R0G 4981n4933g20series_f13.pdf
1N4935G R0G
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41
товар відсутній
1N4935G R1G 1N4933G%20SERIES_I2104.pdf
1N4935G R1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-B rect_s_a0002848374_1-2281424.pdf
1N4935G-B
Виробник: Rectron
Rectifiers Vr/200V Io/1A BULK
товар відсутній
1N4935G-K 1N4933G-K SERIES_B2104.pdf
1N4935G-K
Виробник: Taiwan Semiconductor Corporation
Description: 200NS, 1A, 200V, FAST RECOVERY R
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-K 1N4933G-K SERIES_B2104.pdf
1N4935G-K
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-K A0G 1n4933g-k20series_b2104.pdf
1N4935G-K A0G
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935G-K A0G
1N4935G-K A0G
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935G-T 1n4933g-4937g.pdf
1N4935G-T
Виробник: Rectron
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935G-T ds27002.pdf
1N4935G-T
Виробник: Diodes Inc
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 T/R
товар відсутній
1N4935G-T ds27002.pdf
1N4935G-T
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935G-T rect_s_a0002848374_1-2281424.pdf
1N4935G-T
Виробник: Rectron
Rectifiers DO 41 1A 200V 200ns GP
товар відсутній
1N4935GH
1N4935GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GH
1N4935GH
Виробник: Taiwan Semiconductor
Rectifiers 200ns, 1A, 200V, Fast Recovery Rectifier
товар відсутній
1N4935GHA0G 1N4933G%20SERIES_I2104.pdf
1N4935GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHB0G 1N4933G%20SERIES_I2104.pdf
1N4935GHB0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1N4933G%20SERIES_I2104.pdf
1N4935GHR0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
1N4935GHR0G 1n4933gseries_i2104.pdf
1N4935GHR0G
Виробник: Taiwan Semiconductor
Rectifier Diode Switching 200V 1A 200ns Automotive 2-Pin DO-41 T/R
товар відсутній
1N4935GHR1G 1N4933G%20SERIES_I2104.pdf
1N4935GHR1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
1N4935GL-T ds27002.pdf
1N4935GL-T
Виробник: Diodes Incorporated
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP 1N4933GP - 37GP.pdf
1N4935GP
Виробник: onsemi
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-AP 1N4933GP-1N4937GP(DO-41).pdf
1N4935GP-AP
Виробник: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP 1n4933gp-1n4937gpdo-41.pdf
1N4935GP-BP
Виробник: Micro Commercial Components
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Bulk
товар відсутній
1N4935GP-BP 1N4933GP-1N4937GP(DO-41).pdf
1N4935GP-BP
Виробник: Micro Commercial Co
Description: Interface
Packaging: Bulk
Part Status: Active
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-BP 1N4933GP-1N4937GP(DO-41).pdf
Виробник: Micro Commercial Components (MCC)
Rectifiers Fast Recovery Rectifiers
товар відсутній
1N4935GP-E3/54 1n4933gp.pdf
1N4935GP-E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/54 1n4933gp.pdf
1N4935GP-E3/54
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/54 1n4933gp.pdf
1N4935GP-E3/54
Виробник: Vishay
Diode Switching 200V 1A 2-Pin DO-41 T/R
товар відсутній
1N4935GP-E3/73 1n4933gp.pdf
1N4935GP-E3/73
Виробник: Vishay
Rectifier Diode Switching 200V 1A 200ns 2-Pin DO-41 Ammo
товар відсутній
1N4935GP-E3/73 1n4933gp.pdf
1N4935GP-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-E3/73 1n4933gp.pdf
1N4935GP-E3/73
Виробник: Vishay General Semiconductor
Rectifiers 1.0 Amp 200 Volt Glass Passivated
товар відсутній
1N4935GP-M3/54 1n4933gp.pdf
1N4935GP-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
1N4935GP-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
товар відсутній
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