Транзистори > Біполярні NPN
Корпус: TO-3P
fT: 3 MHz
Uceo,V: 600 V
Ucbo,V: 1500 V
Ic,A: 6

Виробник: Fair
Транзистори > Біполярні PNP
Корпус: TO-92
fT: 100 MHz
Uке, В: 65 V
Uкб, В: 65 V
Iк, А: 0,1 A
h21,max: 475

Виробник: Diotec
Транзистори > Біполярні PNP
Корпус: TO-92 bent
fT: 280 MHz
Uке, В: 65 V
Uкб, В: 65 V
Iк, А: 0,1 A
h21,max: 450

Виробник: Diotec
Транзистори > Біполярні PNP
Корпус: TO-92
Uке, В: 65 V
Uкб, В: 65 V
Iк, А: 0,1 A
h21,max: 450

Виробник: Amphenol RF
Description: N-TYPE STRAIGHT CRIMP PLUG RG-8X
Packaging: Bag
Connector Type: Plug, Male Pin
Contact Termination: Solder
Impedance: 50 Ohms
Mounting Type: Free Hanging (In-Line)
Cable Group: LMR-240
Fastening Type: Threaded
Ingress Protection: IP67 - Dust Tight, Waterproof
Connector Style: N Type
Housing Color: Black
Shield Termination: Crimp
Center Contact Material: Beryllium Copper
Part Status: Active
Frequency - Max: 6 GHz
Number of Ports: 1

Виробник: Amphenol
RF Connectors / Coaxial Connectors N R/A CBL-PLG F/H CRM IP67

Виробник: Hammond Manufacturing
Description: ENCLOSURE ABS 3.15"L X 3.15"W
Packaging: Bulk
Color: Black
Size / Dimension: 3.150" L x 3.150" W (80.00mm x 80.00mm)
Material: ABS
Height: 2.362" (60.00mm)
Design: Cover Included
Ratings: IP54
Container Type: Enclosure
Material Flammability Rating: UL94 V-0
Area (L x W): 9.92in² (64.0cm²)

Виробник: Hammond Manufacturing
Description: ENCLOSURE ABS 3.15"L X 3.15"W
Packaging: Bulk
Color: Light Gray
Size / Dimension: 3.150" L x 3.150" W (80.00mm x 80.00mm)
Material: ABS
Height: 2.362" (60.00mm)
Design: Cover Included
Ratings: IP54
Container Type: Enclosure
Material Flammability Rating: UL94 V-0
Area (L x W): 9.92in² (64.0cm²)

Виробник: Hammond Manufacturing
Description: ENCLOSURE ABS 3.15"L X 3.15"W
Packaging: Bulk
Color: White
Size / Dimension: 3.150" L x 3.150" W (80.00mm x 80.00mm)
Material: ABS
Height: 2.362" (60.00mm)
Design: Cover Included
Ratings: IP54
Container Type: Enclosure
Material Flammability Rating: UL94 V-0
Area (L x W): 9.92in² (64.0cm²)

Виробник: Hammond Manufacturing
Enclosures, Boxes & Cases Modern General Purpose Enclosures 3.15 x 3.15 x 1.77 inch

Виробник: Hammond Manufacturing
Description: ENCLOSURE ABS 3.15"L X 3.15"W
Packaging: Bulk
Color: Black
Size / Dimension: 3.150" L x 3.150" W (80.00mm x 80.00mm)
Material: ABS
Height: 1.772" (45.00mm)
Design: Cover Included
Ratings: IP54
Container Type: Enclosure
Material Flammability Rating: UL94 V-0
Area (L x W): 9.92in² (64.0cm²)

Виробник: Hammond Manufacturing
Description: ENCLOSURE ABS 3.15"L X 3.15"W
Packaging: Bulk
Color: Light Gray
Size / Dimension: 3.150" L x 3.150" W (80.00mm x 80.00mm)
Material: ABS
Height: 1.772" (45.00mm)
Design: Cover Included
Ratings: IP54
Container Type: Enclosure
Material Flammability Rating: UL94 V-0
Area (L x W): 9.92in² (64.0cm²)

Виробник: Hammond Manufacturing
Description: ALUMINUM PANEL
Packaging: Bulk
For Use With/Related Products: 1556 Series
Accessory Type: Panel

Виробник: Hammond Manufacturing
Description: ENCLOSURE ABS 3.15"L X 3.15"W
Packaging: Bulk
Color: White
Size / Dimension: 3.150" L x 3.150" W (80.00mm x 80.00mm)
Material: ABS
Height: 1.772" (45.00mm)
Design: Cover Included
Ratings: IP54
Container Type: Enclosure
Material Flammability Rating: UL94 V-0
Area (L x W): 9.92in² (64.0cm²)

Виробник: Hammond Manufacturing
Enclosures, Boxes & Cases Modern General Purpose Enclosures 3.15 x 3.15 x 1.77 inch

Виробник: National Semiconductor
Description: DECODER/DRIVER
Packaging: Bulk
Package / Case: 16-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-CDIP

Виробник: Siemens
Description: ET 200SP. IM155-6DP HF INCL. DP-
Packaging: Box
For Use With/Related Products: SIMATIC ET 200SP
Mounting Type: DIN Rail
Type: Input, Output (I/O) Module
Termination Style: Screw Terminal
Voltage - Supply: 19.2 ~ 28.8VDC
Number of Inputs and Type: 16 - Digital
Number of Outputs and Type: 16 - Digital
Part Status: Active

Виробник: LUGUANG ELECTRONIC
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.625W; TO92
Mounting: THT
Case: TO92
Frequency: 150MHz
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.625W
Polarisation: bipolar
Collector-emitter voltage: 65V
Current gain: 180...460

Виробник: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 500mW; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 65V
Current gain: 200

Виробник: Diotec Semiconductor
Транзистор PNP; Uceo, В = 65; Ic = 100 мА; Тип монт. = вивідний; ft, МГц = 150; Тексп, °С = -55...+150; TO-92-3

Виробник: LUGUANG ELECTRONIC
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.625W; TO92
Mounting: THT
Case: TO92
Frequency: 150MHz
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.625W
Polarisation: bipolar
Collector-emitter voltage: 65V
Current gain: 180...460
кількість в упаковці: 25 шт

Виробник: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 500mW; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 65V
Current gain: 200
кількість в упаковці: 1 шт

Виробник: Diotec Semiconductor
Description: BJT TO-92 65V 100MA
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi
Description: BJT TO92 65V 100MA PNP 0.5W 150C
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW

Виробник: Diotec Semiconductor
Trans GP BJT PNP 65V 0.1A 500mW 3-Pin TO-92 Ammo

Виробник: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92, 65V, 100mA, PNP

Виробник: Fairchild Semiconductor
Description: TRANS PNP 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW

Виробник: Diotec Semiconductor
Description: BJT TO-92 65V 100MA
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: LGE
PNP 100mA 65V 500mW 150MHz 220 < beta < 475 Equivalent is: BC556B CDIL BC556B TBC556b
кількість в упаковці: 500 шт

Виробник: CDIL
PNP 100mA 65V 500mW 150MHz 200 < beta < 450 BC556B CDIL TBC556b cdil
кількість в упаковці: 500 шт

Виробник: LGE
PNP 100mA 65V 500mW 150MHz 220 < beta < 475 Equivalent is: BC556B CDIL BC556B TBC556b
кількість в упаковці: 500 шт

Виробник: LGE
Possible substitute: BC556B CDIL BC556B TBC556b f
кількість в упаковці: 500 шт

Виробник: CDIL
PNP 100mA 65V 500mW 150MHz 200 < beta < 450 BC556B CDIL TBC556b cdil
кількість в упаковці: 500 шт

Виробник: Central Semiconductor
Bipolar Transistors - BJT PNP 80Vcbo 65 Vceo 800mA 625mW Trans

Виробник: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 500mW; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 65V
Current gain: 200

Виробник: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 500mW; TO92
Mounting: THT
Case: TO92
Kind of package: bulk
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 65V
Current gain: 200
кількість в упаковці: 1 шт

Виробник: Diotec Semiconductor
Trans GP BJT PNP 65V 0.1A 500mW 3-Pin TO-92 Box

Виробник: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92BK, 65V, 100mA, PNP

Виробник: Diotec Semiconductor
Description: TRANS PNP 65V 0.1A TO92
Packaging: Strip
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: DIOTEC
Trans GP BJT PNP 65V 0.1A Automotive 3-Pin TO-92 Ammo BC556BBK BC556B DIOTEC TBC556b DIOTEC
кількість в упаковці: 500 шт

Виробник: Fairchild Semiconductor
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: Motorola
Description: TRANS PNP 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW

Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Frequency: 150MHz
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 65V

Виробник: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 65V; 0.1A; 0.5W; TO92
Mounting: THT
Case: TO92
Kind of package: Ammo Pack
Frequency: 150MHz
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Collector-emitter voltage: 65V
кількість в упаковці: 1 шт

Виробник: ON Semiconductor
Trans GP BJT PNP 65V 0.1A 500mW 3-Pin TO-92 Fan-Fold

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi / Fairchild
Bipolar Transistors - BJT PNP -65V 100mA HFE/450

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi / Fairchild
Bipolar Transistors - BJT PNP Si Transistor Epitaxial

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: Fairchild Semiconductor
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW

Виробник: onsemi
Description: TRANS PNP 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 280MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW

Виробник: Ledil
LED Lighting Reflectors Lens Array Square 50x50mm D 8.5m

Виробник: TEXAS INSTRUMENTS
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,multiplexer,switch; CMOS; THT; DIP16; CD4000
Type of integrated circuit: digital
Kind of integrated circuit: decoder; multiplexer; switch
Technology: CMOS
Mounting: THT
Case: DIP16
Family: CD4000