Виробник: Vishay/IR
N-канальний ПТ; Udss, В = 500; Id = 47 А; Ciss, пФ @ Uds, В = 8310 @ 25; Qg, нКл = 350 @ 10 В; Rds = 90 мОм @ 28 В, 10 В; Ugs(th) = 5 В @ 250 мкА; Р, Вт = 540 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; SUPER-247(TO-274AA)

IRFPS43N50K Транзисторы HEXFET

Виробник: IR
Транзистори > Польові N-канальні
Корпус: Super-247
Uds,V: 500 V
Idd,A: 47 A
Rds(on), Ohm: 0,078 Ohm
Ciss, pF/Qg, nC: 8310/350
Монтаж: THT

Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 47A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V

Виробник: Vishay / Siliconix
MOSFETs RECOMMENDED ALT IRFPS43N50KPBF

Виробник: Vishay
Trans MOSFET N-CH 500V 47A 3-Pin Super-247

Виробник: Vishay
Trans MOSFET N-CH 500V 47A 3-Pin Super-247

Виробник: Vishay Siliconix
Description: MOSFET N-CH 500V 47A SUPER247
Packaging: Tube
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 28A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8310 pF @ 25 V

Виробник: Vishay
Trans MOSFET N-CH 500V 47A 3-Pin Super-247