Результат пошуку "c546b" : 112
Обрати Сторінку:
[ << Попередня Сторінка ]
1
2
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
BC546B A1G | Taiwan Semiconductor Corporation |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546B A1G | Taiwan Semiconductor | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo |
товар відсутній |
||
BC546B APM PBFREE | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch |
товар відсутній |
||
BC546B APM TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch |
товар відсутній |
||
BC546B B1 | Taiwan Semiconductor | NPN Small Signal Transistor |
товар відсутній |
||
BC546B B1G | Taiwan Semiconductor | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk |
товар відсутній |
||
BC546B B1G | Taiwan Semiconductor Corporation |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546B PBFREE | Central Semiconductor | Bipolar Transistors - BJT NPN 80Vcbo 80 Vceo 200mA 500mW Trans |
товар відсутній |
||
BC546B TRE PBFREE | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch |
товар відсутній |
||
BC546B TRE TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch |
товар відсутній |
||
BC546B,112 | NXP Semiconductors | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk |
товар відсутній |
||
BC546B,116 | NXP Semiconductors | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R |
товар відсутній |
||
BC546B,116 | NXP USA Inc. |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546B,126 | NXP Semiconductors | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo |
товар відсутній |
||
BC546B,126 | NXP USA Inc. |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546B-AP | Micro Commercial Co |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 625 mW |
товар відсутній |
||
BC546B-AP-HF | Micro Commercial Components | Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Ammo |
товар відсутній |
||
BC546B-BP-HF | Micro Commercial Components | Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Bulk |
товар відсутній |
||
BC546B-I-HL1 | Rectron | BC546B-I-HL1 |
товар відсутній |
||
BC546B-I-HL1 | Rectron | BC546B-I-HL1 |
товар відсутній |
||
BC546B-J35Z | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk |
товар відсутній |
||
BC546BBK | Diotec Semiconductor | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Box |
товар відсутній |
||
BC546BBU | onsemi |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546BG | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 Box |
товар відсутній |
||
BC546BG | onsemi |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 625 mW |
товар відсутній |
||
BC546BG | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 Box |
товар відсутній |
||
BC546BRL1G | onsemi |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 625 mW |
товар відсутній |
||
BC546BRL1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R |
товар відсутній |
||
BC546BRL1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R |
товар відсутній |
||
BC546BRL1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R |
товар відсутній |
||
BC546BRL1G | onsemi |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 625 mW |
товар відсутній |
||
BC546BTAR | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo |
товар відсутній |
||
BC546BTAR | onsemi |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546BTFR | onsemi |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546BU | onsemi |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
BC546BU | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Bulk |
товар відсутній |
||
BC546BZL1G | onsemi |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 625 mW |
товар відсутній |
||
BC546BZL1G | onsemi |
Description: TRANS NPN 65V 0.1A TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 625 mW |
товар відсутній |
||
BC546BZL1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 Fan-Fold |
товар відсутній |
||
BC546B_J35Z | onsemi |
Description: TRANS NPN 65V 0.1A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
CP188-BC546B-CM | Central Semiconductor Corp |
Description: TRANSISTOR Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 300MHz Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
CP188-BC546B-CT | Central Semiconductor Corp |
Description: TRANS NPN 65V 0.1A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
CP188-BC546B-WR | Central Semiconductor Corp |
Description: TRANS NPN 65V 0.1A DIE Packaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: Die Part Status: Obsolete Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
CP388X-BC546B-CT | Central Semiconductor Corp |
Description: TRANS NPN 65V 0.1A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: Die Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
||
CP388X-BC546B-WR | Central Semiconductor Corp |
Description: TRANS NPN 65V 0.1A DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Supplier Device Package: Die Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
товар відсутній |
BC546B A1G |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546B A1G |
Виробник: Taiwan Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo
товар відсутній
BC546B APM PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
товар відсутній
BC546B APM TIN/LEAD |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
товар відсутній
BC546B B1G |
Виробник: Taiwan Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk
товар відсутній
BC546B B1G |
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546B PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT NPN 80Vcbo 80 Vceo 200mA 500mW Trans
Bipolar Transistors - BJT NPN 80Vcbo 80 Vceo 200mA 500mW Trans
товар відсутній
BC546B TRE PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
товар відсутній
BC546B TRE TIN/LEAD |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch
товар відсутній
BC546B,112 |
Виробник: NXP Semiconductors
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk
товар відсутній
BC546B,116 |
Виробник: NXP Semiconductors
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 T/R
товар відсутній
BC546B,116 |
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546B,126 |
Виробник: NXP Semiconductors
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo
товар відсутній
BC546B,126 |
Виробник: NXP USA Inc.
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546B-AP |
Виробник: Micro Commercial Co
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
товар відсутній
BC546B-AP-HF |
Виробник: Micro Commercial Components
Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Ammo
Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Ammo
товар відсутній
BC546B-BP-HF |
Виробник: Micro Commercial Components
Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Bulk
Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Bulk
товар відсутній
BC546B-J35Z |
Виробник: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Bulk
товар відсутній
BC546BBK |
Виробник: Diotec Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Box
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Box
товар відсутній
BC546BBU |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546BG |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
товар відсутній
BC546BRL1G |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
товар відсутній
BC546BRL1G |
Виробник: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
товар відсутній
BC546BRL1G |
Виробник: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
товар відсутній
BC546BRL1G |
Виробник: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 T/R
товар відсутній
BC546BRL1G |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
товар відсутній
BC546BTAR |
Виробник: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo
Trans GP BJT NPN 65V 0.1A 500mW 3-Pin TO-92 Ammo
товар відсутній
BC546BTAR |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546BTFR |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546BU |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
BC546BZL1G |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
товар відсутній
BC546BZL1G |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
Description: TRANS NPN 65V 0.1A TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 625 mW
товар відсутній
BC546BZL1G |
Виробник: ON Semiconductor
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 Fan-Fold
Trans GP BJT NPN 65V 0.1A 625mW 3-Pin TO-92 Fan-Fold
товар відсутній
BC546B_J35Z |
Виробник: onsemi
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
CP188-BC546B-CM |
Виробник: Central Semiconductor Corp
Description: TRANSISTOR
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANSISTOR
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
CP188-BC546B-CT |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 65V 0.1A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
CP188-BC546B-WR |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 65V 0.1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A DIE
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
CP388X-BC546B-CT |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 65V 0.1A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
CP388X-BC546B-WR |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 65V 0.1A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS NPN 65V 0.1A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
товар відсутній
Обрати Сторінку:
[ << Попередня Сторінка ]
1
2