Продукція > SHENZHEN SLKORMICRO SEMICON CO., LTD. > Всі товари виробника SHENZHEN SLKORMICRO SEMICON CO., LTD. (1280) > Сторінка 13 з 22
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SL07P02W | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 7A 1.2W 30M@4.5V 4A 1V@250UAPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL1013T | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 0.35A 200MW 2700M@1.8V 1.2V@Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL1013T | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 0.35A 200MW 2700M@1.8V 1.2V@Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL1117-1.2 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 1A ADJUSTABLE/FIXED 18V 1.2V 750Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL1117-1.2 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 1A ADJUSTABLE/FIXED 18V 1.2V 750Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL1117-3.3 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 1A ADJUSTABLE/FIXED 18V 3.3V 750Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL1117-3.3 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 1A ADJUSTABLE/FIXED 18V 3.3V 750Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL13003 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 400V 1.25W NPN TO-126-3Packaging: Bag Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.25 W |
на замовлення 322 шт: термін постачання 21-31 дні (днів) |
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SL15N10A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 100V 15A 34W 115M@10V 3V@250UA 1Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL15N10A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 100V 15A 34W 115M@10V 3V@250UA 1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 8A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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SL1603TH | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: FULL-POLE TYPE 1.6V~5.5V SOT-23 Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.6V ~ 5.5V Technology: Magnetoresistive Sensing Range: ±52mT Trip, ±38mT Release Current - Output (Max): 1mA Current - Supply (Max): 3.3µA Supplier Device Package: SOT-23 Test Condition: 25°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL1603TH | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: FULL-POLE TYPE 1.6V~5.5V SOT-23 Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Push-Pull Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Omnipolar Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.6V ~ 5.5V Technology: Magnetoresistive Sensing Range: ±52mT Trip, ±38mT Release Current - Output (Max): 1mA Current - Supply (Max): 3.3µA Supplier Device Package: SOT-23 Test Condition: 25°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2300 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4.2A 1.2W 60M@1.8V,1A 1.2V 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 30mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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SL2300 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4.2A 1.2W 60M@1.8V,1A 1.2V 1Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 30mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2300A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 5.8A 1W 21M@4.5V 4A SOT-23Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2300A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 5.8A 1W 21M@4.5V 4A SOT-23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2300B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 5.8A 1W 35M@4.5V 3A 1.2V@250Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2300B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 5.8A 1W 35M@4.5V 3A 1.2V@250Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2301 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.8A 400MW 112M@4.5V,2.8A 40Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2301 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.8A 400MW 112M@4.5V,2.8A 40Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
на замовлення 1171 шт: термін постачання 21-31 дні (днів) |
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SL2301A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3A 1W 70M@4.5V 2.5A SOT-23Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2301A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3A 1W 70M@4.5V 2.5A SOT-23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2301B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3A 1.56W 82M@4.5V 3A 1.3V@25Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2301B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3A 1.56W 82M@4.5V 3A 1.3V@25Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2301S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.4A 140M@4.5V,2.4A 900MW 1.Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SL2301S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.4A 140M@4.5V,2.4A 900MW 1.Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
на замовлення 2728 шт: термін постачання 21-31 дні (днів) |
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SL2301T | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.3A 700MW 250M@1.8V 1V@250UPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2301T | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.3A 700MW 250M@1.8V 1V@250UPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3.5A 1W 60M@4.5V,2.8A 1.5V 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.6A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
на замовлення 734 шт: термін постачання 21-31 дні (днів) |
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SL2302 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3.5A 1W 60M@4.5V,2.8A 1.5V 1Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.6A, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3.3A 1W 70M@2.5V 2A SOT-23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 3.3A 1W 70M@2.5V 2A SOT-23Packaging: Cut Tape (CT) |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SL2302B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: MOSFET N-CH 20V 2.8APackaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A FET Feature: Logic Level Gate, 4V Drive Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: MOSFET N-CH 20V 2.8APackaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A FET Feature: Logic Level Gate, 4V Drive Power Dissipation (Max): 1.25W Vgs(th) (Max) @ Id: 1.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
на замовлення 2837 шт: термін постачання 21-31 дні (днів) |
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SL2302D | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.5A 700MW 700MV@250UA SOT-2Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302D | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.5A 700MW 700MV@250UA SOT-2Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V |
на замовлення 2300 шт: термін постачання 21-31 дні (днів) |
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SL2302S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.6A 900MW 85M@4.5V,2.6A 1.5Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 85mOhm @ 2.6A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SL2302S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.6A 900MW 85M@4.5V,2.6A 1.5Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A Rds On (Max) @ Id, Vgs: 85mOhm @ 2.6A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
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SL2302S1 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V |
на замовлення 1682 шт: термін постачання 21-31 дні (днів) |
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SL2302S1 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302S1 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2302T | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 750MA 800M@1.8V 150MW 1V@250Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 |
на замовлення 2970 шт: термін постачання 21-31 дні (днів) |
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SL2302T | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 750MA 800M@1.8V 150MW 1V@250Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2305 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 1.31W 45M@4.5V 4.1A 1V@25Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.1A Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2305 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 1.31W 45M@4.5V 4.1A 1V@25Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.1A Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 4.5V |
на замовлення 2994 шт: термін постачання 21-31 дні (днів) |
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SL2305S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.31W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2305S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V Power Dissipation (Max): 1.31W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2306 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2306 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2307 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UAPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2307 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UAPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SL2308 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2308 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2Packaging: Cut Tape (CT) |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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SL2308A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 150M@4.5V 350MW 2.5V@250UPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2308A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 150M@4.5V 350MW 2.5V@250UPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2309 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2309 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SL2309A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SL2309A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2310 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SL07P02W |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 7A 1.2W 30M@4.5V 4A 1V@250UA
Packaging: Tape & Reel (TR)
Description: 20V 7A 1.2W 30M@4.5V 4A 1V@250UA
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.19 грн |
| SL1013T |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 0.35A 200MW 2700M@1.8V 1.2V@
Packaging: Tape & Reel (TR)
Description: 20V 0.35A 200MW 2700M@1.8V 1.2V@
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SL1013T |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 0.35A 200MW 2700M@1.8V 1.2V@
Packaging: Cut Tape (CT)
Description: 20V 0.35A 200MW 2700M@1.8V 1.2V@
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL1117-1.2 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 1A ADJUSTABLE/FIXED 18V 1.2V 750
Packaging: Tape & Reel (TR)
Description: 1A ADJUSTABLE/FIXED 18V 1.2V 750
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SL1117-1.2 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 1A ADJUSTABLE/FIXED 18V 1.2V 750
Packaging: Cut Tape (CT)
Description: 1A ADJUSTABLE/FIXED 18V 1.2V 750
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL1117-3.3 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 1A ADJUSTABLE/FIXED 18V 3.3V 750
Packaging: Tape & Reel (TR)
Description: 1A ADJUSTABLE/FIXED 18V 3.3V 750
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SL1117-3.3 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 1A ADJUSTABLE/FIXED 18V 3.3V 750
Packaging: Cut Tape (CT)
Description: 1A ADJUSTABLE/FIXED 18V 3.3V 750
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL13003 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 400V 1.25W NPN TO-126-3
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.25 W
Description: 400V 1.25W NPN TO-126-3
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.25 W
на замовлення 322 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 20.79 грн |
| 25+ | 12.31 грн |
| 100+ | 7.72 грн |
| SL15N10A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100V 15A 34W 115M@10V 3V@250UA 1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
Description: 100V 15A 34W 115M@10V 3V@250UA 1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| SL15N10A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100V 15A 34W 115M@10V 3V@250UA 1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
Description: 100V 15A 34W 115M@10V 3V@250UA 1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 8A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 50 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.73 грн |
| 14+ | 22.54 грн |
| 100+ | 14.37 грн |
| 500+ | 10.17 грн |
| 1000+ | 9.10 грн |
| SL1603TH |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: FULL-POLE TYPE 1.6V~5.5V SOT-23
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 5.5V
Technology: Magnetoresistive
Sensing Range: ±52mT Trip, ±38mT Release
Current - Output (Max): 1mA
Current - Supply (Max): 3.3µA
Supplier Device Package: SOT-23
Test Condition: 25°C
Description: FULL-POLE TYPE 1.6V~5.5V SOT-23
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 5.5V
Technology: Magnetoresistive
Sensing Range: ±52mT Trip, ±38mT Release
Current - Output (Max): 1mA
Current - Supply (Max): 3.3µA
Supplier Device Package: SOT-23
Test Condition: 25°C
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| SL1603TH |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: FULL-POLE TYPE 1.6V~5.5V SOT-23
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 5.5V
Technology: Magnetoresistive
Sensing Range: ±52mT Trip, ±38mT Release
Current - Output (Max): 1mA
Current - Supply (Max): 3.3µA
Supplier Device Package: SOT-23
Test Condition: 25°C
Description: FULL-POLE TYPE 1.6V~5.5V SOT-23
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Push-Pull
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Omnipolar Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.6V ~ 5.5V
Technology: Magnetoresistive
Sensing Range: ±52mT Trip, ±38mT Release
Current - Output (Max): 1mA
Current - Supply (Max): 3.3µA
Supplier Device Package: SOT-23
Test Condition: 25°C
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од. на суму грн.
| SL2300 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4.2A 1.2W 60M@1.8V,1A 1.2V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Description: 20V 4.2A 1.2W 60M@1.8V,1A 1.2V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.63 грн |
| 35+ | 8.68 грн |
| 100+ | 5.41 грн |
| 500+ | 3.72 грн |
| 1000+ | 3.27 грн |
| SL2300 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4.2A 1.2W 60M@1.8V,1A 1.2V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Description: 20V 4.2A 1.2W 60M@1.8V,1A 1.2V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A
Rds On (Max) @ Id, Vgs: 30mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
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| SL2300A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 5.8A 1W 21M@4.5V 4A SOT-23
Packaging: Tape & Reel (TR)
Description: 20V 5.8A 1W 21M@4.5V 4A SOT-23
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.24 грн |
| SL2300A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 5.8A 1W 21M@4.5V 4A SOT-23
Packaging: Cut Tape (CT)
Description: 20V 5.8A 1W 21M@4.5V 4A SOT-23
Packaging: Cut Tape (CT)
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В кошику
од. на суму грн.
| SL2300B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 5.8A 1W 35M@4.5V 3A 1.2V@250
Packaging: Tape & Reel (TR)
Description: 20V 5.8A 1W 35M@4.5V 3A 1.2V@250
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.24 грн |
| SL2300B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 5.8A 1W 35M@4.5V 3A 1.2V@250
Packaging: Cut Tape (CT)
Description: 20V 5.8A 1W 35M@4.5V 3A 1.2V@250
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2301 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.8A 400MW 112M@4.5V,2.8A 40
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 2.8A 400MW 112M@4.5V,2.8A 40
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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| SL2301 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.8A 400MW 112M@4.5V,2.8A 40
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 2.8A 400MW 112M@4.5V,2.8A 40
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 1171 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.93 грн |
| 89+ | 3.34 грн |
| 145+ | 2.05 грн |
| 500+ | 1.38 грн |
| 1000+ | 1.20 грн |
| SL2301A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3A 1W 70M@4.5V 2.5A SOT-23
Packaging: Tape & Reel (TR)
Description: 20V 3A 1W 70M@4.5V 2.5A SOT-23
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.22 грн |
| SL2301A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3A 1W 70M@4.5V 2.5A SOT-23
Packaging: Cut Tape (CT)
Description: 20V 3A 1W 70M@4.5V 2.5A SOT-23
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2301B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3A 1.56W 82M@4.5V 3A 1.3V@25
Packaging: Tape & Reel (TR)
Description: 20V 3A 1.56W 82M@4.5V 3A 1.3V@25
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.08 грн |
| SL2301B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3A 1.56W 82M@4.5V 3A 1.3V@25
Packaging: Cut Tape (CT)
Description: 20V 3A 1.56W 82M@4.5V 3A 1.3V@25
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
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| SL2301S |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.4A 140M@4.5V,2.4A 900MW 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 2.4A 140M@4.5V,2.4A 900MW 1.
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.28 грн |
| 6000+ | 1.09 грн |
| 9000+ | 1.01 грн |
| SL2301S |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.4A 140M@4.5V,2.4A 900MW 1.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 2.4A 140M@4.5V,2.4A 900MW 1.
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 140mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 2728 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.93 грн |
| 76+ | 3.93 грн |
| 123+ | 2.42 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.42 грн |
| SL2301T |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.3A 700MW 250M@1.8V 1V@250U
Packaging: Tape & Reel (TR)
Description: 20V 2.3A 700MW 250M@1.8V 1V@250U
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.41 грн |
| SL2301T |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.3A 700MW 250M@1.8V 1V@250U
Packaging: Cut Tape (CT)
Description: 20V 2.3A 700MW 250M@1.8V 1V@250U
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2302 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3.5A 1W 60M@4.5V,2.8A 1.5V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: 20V 3.5A 1W 60M@4.5V,2.8A 1.5V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.47 грн |
| 58+ | 5.12 грн |
| 100+ | 3.15 грн |
| 500+ | 2.14 грн |
| SL2302 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3.5A 1W 60M@4.5V,2.8A 1.5V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: 20V 3.5A 1W 60M@4.5V,2.8A 1.5V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
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од. на суму грн.
| SL2302A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3.3A 1W 70M@2.5V 2A SOT-23
Packaging: Tape & Reel (TR)
Description: 20V 3.3A 1W 70M@2.5V 2A SOT-23
Packaging: Tape & Reel (TR)
товару немає в наявності
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од. на суму грн.
| SL2302A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 3.3A 1W 70M@2.5V 2A SOT-23
Packaging: Cut Tape (CT)
Description: 20V 3.3A 1W 70M@2.5V 2A SOT-23
Packaging: Cut Tape (CT)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.70 грн |
| 64+ | 4.67 грн |
| 105+ | 2.85 грн |
| 500+ | 1.93 грн |
| 1000+ | 1.68 грн |
| SL2302B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: MOSFET N-CH 20V 2.8A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A
FET Feature: Logic Level Gate, 4V Drive
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A
FET Feature: Logic Level Gate, 4V Drive
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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| SL2302B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: MOSFET N-CH 20V 2.8A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A
FET Feature: Logic Level Gate, 4V Drive
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: MOSFET N-CH 20V 2.8A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A
FET Feature: Logic Level Gate, 4V Drive
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 2837 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.93 грн |
| 86+ | 3.48 грн |
| 138+ | 2.16 грн |
| 500+ | 1.45 грн |
| 1000+ | 1.27 грн |
| SL2302D |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.5A 700MW 700MV@250UA SOT-2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: 20V 2.5A 700MW 700MV@250UA SOT-2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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од. на суму грн.
| SL2302D |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.5A 700MW 700MV@250UA SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
Description: 20V 2.5A 700MW 700MV@250UA SOT-2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.93 грн |
| 86+ | 3.48 грн |
| 140+ | 2.13 грн |
| 500+ | 1.43 грн |
| 1000+ | 1.25 грн |
| SL2302S |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.6A 900MW 85M@4.5V,2.6A 1.5
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
Description: 20V 2.6A 900MW 85M@4.5V,2.6A 1.5
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.20 грн |
| 6000+ | 1.02 грн |
| SL2302S |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.6A 900MW 85M@4.5V,2.6A 1.5
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
Description: 20V 2.6A 900MW 85M@4.5V,2.6A 1.5
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A
Rds On (Max) @ Id, Vgs: 85mOhm @ 2.6A, 4.5V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.93 грн |
| 80+ | 3.71 грн |
| 131+ | 2.27 грн |
| 500+ | 1.53 грн |
| 1000+ | 1.34 грн |
| SL2302S1 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V
на замовлення 1682 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 6.93 грн |
| 96+ | 3.11 грн |
| 157+ | 1.90 грн |
| 500+ | 1.27 грн |
| 1000+ | 1.11 грн |
| SL2302S1 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V
товару немає в наявності
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од. на суму грн.
| SL2302S1 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V
Description: 20V 2.8A 0.8W 50M@4.5V,2.8A 1V@2
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 10 V
товару немає в наявності
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од. на суму грн.
| SL2302T |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 750MA 800M@1.8V 150MW 1V@250
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Description: 20V 750MA 800M@1.8V 150MW 1V@250
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
на замовлення 2970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.55 грн |
| 44+ | 6.82 грн |
| 100+ | 4.20 грн |
| 500+ | 2.87 грн |
| 1000+ | 2.52 грн |
| SL2302T |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 750MA 800M@1.8V 150MW 1V@250
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Description: 20V 750MA 800M@1.8V 150MW 1V@250
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
товару немає в наявності
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од. на суму грн.
| SL2305 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 1.31W 45M@4.5V 4.1A 1V@25
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.1A
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 4.5V
Description: 20V 4A 1.31W 45M@4.5V 4.1A 1V@25
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.1A
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 4.5V
товару немає в наявності
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| SL2305 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 1.31W 45M@4.5V 4.1A 1V@25
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.1A
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 4.5V
Description: 20V 4A 1.31W 45M@4.5V 4.1A 1V@25
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 4.1A
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.1A, 4.5V
на замовлення 2994 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.78 грн |
| 44+ | 6.75 грн |
| 100+ | 4.17 грн |
| 500+ | 2.84 грн |
| 1000+ | 2.50 грн |
| SL2305S |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.31W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.31W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.27 грн |
| SL2305S |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.31W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 1.31W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
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| SL2306 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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| SL2306 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.54 грн |
| SL2307 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
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| SL2307 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.40 грн |
| 34+ | 8.82 грн |
| 100+ | 5.51 грн |
| 500+ | 3.79 грн |
| 1000+ | 3.34 грн |
| SL2308 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Tape & Reel (TR)
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Tape & Reel (TR)
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| SL2308 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Cut Tape (CT)
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Cut Tape (CT)
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.55 грн |
| 44+ | 6.90 грн |
| 100+ | 4.29 грн |
| 500+ | 2.93 грн |
| 1000+ | 2.57 грн |
| SL2308A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.08 грн |
| SL2308A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
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| SL2309 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
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| SL2309 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.94 грн |
| 31+ | 9.86 грн |
| 100+ | 6.13 грн |
| 500+ | 4.22 грн |
| 1000+ | 3.73 грн |
| SL2309A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
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| SL2309A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.57 грн |
| SL2310 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
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