Продукція > SHENZHEN SLKORMICRO SEMICON CO., LTD. > Всі товари виробника SHENZHEN SLKORMICRO SEMICON CO., LTD. (1366) > Сторінка 15 з 23
| Фото | Назва | Виробник | Інформація |
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SL2305S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1Power Dissipation (Max): 1.31W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2306 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2306 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2307 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UAPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2307 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UAPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SL2308 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2308 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2Packaging: Cut Tape (CT) |
на замовлення 2980 шт: термін постачання 21-31 дні (днів) |
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SL2308A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 150M@4.5V 350MW 2.5V@250UPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2308A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 150M@4.5V 350MW 2.5V@250UPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2309 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2309 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.6V @ 250µA Power Dissipation (Max): 1.5W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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SL2309A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-23 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2309A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2310 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2310 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V |
на замовлення 1895 шт: термін постачання 21-31 дні (днів) |
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SL2312 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 5A 1.25W 50M@1.8V 1.2V@250UAPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2312 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 5A 1.25W 50M@1.8V 1.2V@250UAPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V |
на замовлення 2578 шт: термін постачання 21-31 дні (днів) |
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SL2312A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 6A 1.25W 18M@4.5V 5A SOT-23Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2312A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 6A 1.25W 18M@4.5V 5A SOT-23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2318A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 40V 5A 1.2W 60M@4.5V 4A SOT-23Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2318A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 40V 5A 1.2W 60M@4.5V 4A SOT-23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2319A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 40V 4.4A 1.5W 150M@4.5V 2.5V@250Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 30 V |
на замовлення 2324 шт: термін постачання 21-31 дні (днів) |
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SL2319A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 40V 4.4A 1.5W 150M@4.5V 2.5V@250Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2320B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 6A 1.25W 18M@4.5V 5A 1V@250UPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2320B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 6A 1.25W 18M@4.5V 5A 1V@250UPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2324 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 100V 2.3A 234M@10V,2A 1.3W 2.5VPackaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2324 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 100V 2.3A 234M@10V,2A 1.3W 2.5VPackaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2333A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 12V 6A 1.2W 70M@1.8V 1V@250UA 1Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2333A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 12V 6A 1.2W 70M@1.8V 1V@250UA 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL2347 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5A 45M@10V,3A 1.25W 1V 1 P-CPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL2347 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5A 45M@10V,3A 1.25W 1V 1 P-CPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V Power Dissipation (Max): 1.25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL27511A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: LOW SIDE 1 4A 14NS 8NS 4.5V~20VCurrent - Peak Output (Source, Sink): 4A, 8A Gate Type: IGBT, SiC MOSFET Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 8ns, 6ns Supplier Device Package: SOT-23-6 Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL27511A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: LOW SIDE 1 4A 14NS 8NS 4.5V~20VCurrent - Peak Output (Source, Sink): 4A, 8A Gate Type: IGBT, SiC MOSFET Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 8ns, 6ns Supplier Device Package: SOT-23-6 Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2990 шт: термін постачання 21-31 дні (днів) |
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SL3400 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5.8A 41M@10V 1.4W 700MV 1 N-Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3400 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5.8A 41M@10V 1.4W 700MV 1 N-Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3400D | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5.8A 1.2W 40M@4.5V 4A SOT-23Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3400D | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5.8A 1.2W 40M@4.5V 4A SOT-23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3401 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 85M@2.5V 350MW 1.3V@250Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3401 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 85M@2.5V 350MW 1.3V@250Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3401B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.2A 1.4W 64M@4.5V 1A SOT-23Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3401B | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.2A 1.4W 64M@4.5V 1A SOT-23Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3401S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4A 60M@10V,4A 2.5W 1 PIECE PPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3401S | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4A 60M@10V,4A 2.5W 1 PIECE PPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V |
на замовлення 2603 шт: термін постачання 21-31 дні (днів) |
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SL3402 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4A 1.5W 60M@4.5V 1.5V@250UAPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 24 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3402 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4A 1.5W 60M@4.5V 1.5V@250UAPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 24 V |
на замовлення 2864 шт: термін постачання 21-31 дні (днів) |
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SL3404 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5A 1.4W 1 N-CHANNEL SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3404 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5A 1.4W 1 N-CHANNEL SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 15 V |
на замовлення 2284 шт: термін постачання 21-31 дні (днів) |
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SL3405 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 2.6A 1W 180M@4.5V 2.3V@250UAInput Capacitance (Ciss) (Max) @ Vds: 854 pF @ 15 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3405 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 2.6A 1W 180M@4.5V 2.3V@250UATechnology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3406 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5.6A 40M@4.5V 1.2W 2.2V@250UPackaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3406 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 5.6A 40M@4.5V 1.2W 2.2V@250UOperating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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SL3407 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 95M@4.5V,4A 1.4W 1.5V 1Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3407 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.1A 95M@4.5V,4A 1.4W 1.5V 1Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
на замовлення 2798 шт: термін постачання 21-31 дні (днів) |
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SL3407A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.2A 1.4W 85M@4.5V 3A 2.5V@2Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3407A | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 30V 4.2A 1.4W 85M@4.5V 3A 2.5V@2Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3420 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 6A 1W 35M@4.5V 3A SOT-23Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3420 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 20V 6A 1W 35M@4.5V 3A SOT-23Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SL3904 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: TRANS NPN 40V 0.2A SOT-23Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: SOT-23 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SL3904 | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: TRANS NPN 40V 0.2A SOT-23Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Supplier Device Package: SOT-23 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 50nA Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SL4056E | Shenzhen Slkormicro Semicon Co., Ltd. |
Description: 4.2V 1000MA ESOP-8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Cells: 1 Mounting Type: Surface Mount Interface: USB Operating Temperature: -40°C ~ 85°C Battery Chemistry: Lithium Ion Supplier Device Package: 8-SOP Charge Current - Max: 1A Programmable Features: Current, Voltage Fault Protection: Reverse Battery Voltage - Supply (Max): 6.5V Battery Pack Voltage: 4.2V Current - Charging: Constant - Programmable |
товару немає в наявності |
В кошику од. на суму грн. |
| SL2305S |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1
Power Dissipation (Max): 1.31W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
Description: 20V 4A 45M@4.5V 1.31W 1V@250UA 1
Power Dissipation (Max): 1.31W (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1V @ 250µA
товару немає в наявності
В кошику
од. на суму грн.
| SL2306 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.59 грн |
| SL2306 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
Description: 20V 4A 1.2W 1 N-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 40mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
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| SL2307 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
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| SL2307 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Description: 30V 4.1A 87M@4.5V 300MW 3V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4.1A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.65 грн |
| 34+ | 8.96 грн |
| 100+ | 5.60 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.39 грн |
| SL2308 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Tape & Reel (TR)
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Tape & Reel (TR)
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| SL2308 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Cut Tape (CT)
Description: 60V 1.8A 800MW 1 N-CHANNEL SOT-2
Packaging: Cut Tape (CT)
на замовлення 2980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.73 грн |
| 44+ | 7.01 грн |
| 100+ | 4.36 грн |
| 500+ | 2.98 грн |
| 1000+ | 2.61 грн |
| SL2308A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.12 грн |
| SL2308A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
Description: 60V 3A 150M@4.5V 350MW 2.5V@250U
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 30 V
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| SL2309 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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| SL2309 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: 60V 1.6A 200M@4.5V 1.5W 2.6V@250
Input Capacitance (Ciss) (Max) @ Vds: 444.2 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 1.5W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 17.21 грн |
| 31+ | 10.02 грн |
| 100+ | 6.23 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.79 грн |
| SL2309A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23
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| SL2309A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: 60V 2A 1.25W 1 P-CHANNEL SOT-23
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.63 грн |
| SL2310 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
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| SL2310 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
Description: 60V 3A 1.7W 125M@4.5V,3A 2V 1 N-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3A, 10V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 247 pF @ 30 V
на замовлення 1895 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 40+ | 7.82 грн |
| 65+ | 4.67 грн |
| 106+ | 2.85 грн |
| 500+ | 1.92 грн |
| 1000+ | 1.68 грн |
| SL2312 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 5A 1.25W 50M@1.8V 1.2V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Description: 20V 5A 1.25W 50M@1.8V 1.2V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
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| SL2312 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 5A 1.25W 50M@1.8V 1.2V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
Description: 20V 5A 1.25W 50M@1.8V 1.2V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V
на замовлення 2578 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.39 грн |
| 55+ | 5.50 грн |
| 100+ | 3.39 грн |
| 500+ | 2.30 грн |
| 1000+ | 2.02 грн |
| SL2312A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 6A 1.25W 18M@4.5V 5A SOT-23
Packaging: Tape & Reel (TR)
Description: 20V 6A 1.25W 18M@4.5V 5A SOT-23
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.74 грн |
| SL2312A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 6A 1.25W 18M@4.5V 5A SOT-23
Packaging: Cut Tape (CT)
Description: 20V 6A 1.25W 18M@4.5V 5A SOT-23
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2318A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 40V 5A 1.2W 60M@4.5V 4A SOT-23
Packaging: Tape & Reel (TR)
Description: 40V 5A 1.2W 60M@4.5V 4A SOT-23
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.14 грн |
| SL2318A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 40V 5A 1.2W 60M@4.5V 4A SOT-23
Packaging: Cut Tape (CT)
Description: 40V 5A 1.2W 60M@4.5V 4A SOT-23
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2319A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 40V 4.4A 1.5W 150M@4.5V 2.5V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 30 V
Description: 40V 4.4A 1.5W 150M@4.5V 2.5V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 30 V
на замовлення 2324 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.08 грн |
| 36+ | 8.44 грн |
| 100+ | 5.20 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.14 грн |
| SL2319A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 40V 4.4A 1.5W 150M@4.5V 2.5V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 30 V
Description: 40V 4.4A 1.5W 150M@4.5V 2.5V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 553 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| SL2320B |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 6A 1.25W 18M@4.5V 5A 1V@250U
Packaging: Tape & Reel (TR)
Description: 20V 6A 1.25W 18M@4.5V 5A 1V@250U
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.48 грн |
| SL2320B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 6A 1.25W 18M@4.5V 5A 1V@250U
Packaging: Cut Tape (CT)
Description: 20V 6A 1.25W 18M@4.5V 5A 1V@250U
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2324 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100V 2.3A 234M@10V,2A 1.3W 2.5V
Packaging: Tape & Reel (TR)
Description: 100V 2.3A 234M@10V,2A 1.3W 2.5V
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.48 грн |
| SL2324 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 100V 2.3A 234M@10V,2A 1.3W 2.5V
Packaging: Cut Tape (CT)
Description: 100V 2.3A 234M@10V,2A 1.3W 2.5V
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL2333A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 12V 6A 1.2W 70M@1.8V 1V@250UA 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Description: 12V 6A 1.2W 70M@1.8V 1V@250UA 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.35 грн |
| SL2333A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 12V 6A 1.2W 70M@1.8V 1V@250UA 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Description: 12V 6A 1.2W 70M@1.8V 1V@250UA 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
товару немає в наявності
В кошику
од. на суму грн.
| SL2347 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5A 45M@10V,3A 1.25W 1V 1 P-C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 10 V
Description: 30V 5A 45M@10V,3A 1.25W 1V 1 P-C
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.35 грн |
| SL2347 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5A 45M@10V,3A 1.25W 1V 1 P-C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 10 V
Description: 30V 5A 45M@10V,3A 1.25W 1V 1 P-C
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 10V
Power Dissipation (Max): 1.25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SL27511A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: LOW SIDE 1 4A 14NS 8NS 4.5V~20V
Current - Peak Output (Source, Sink): 4A, 8A
Gate Type: IGBT, SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: SOT-23-6
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: LOW SIDE 1 4A 14NS 8NS 4.5V~20V
Current - Peak Output (Source, Sink): 4A, 8A
Gate Type: IGBT, SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: SOT-23-6
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SL27511A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: LOW SIDE 1 4A 14NS 8NS 4.5V~20V
Current - Peak Output (Source, Sink): 4A, 8A
Gate Type: IGBT, SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: SOT-23-6
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: LOW SIDE 1 4A 14NS 8NS 4.5V~20V
Current - Peak Output (Source, Sink): 4A, 8A
Gate Type: IGBT, SiC MOSFET
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 8ns, 6ns
Supplier Device Package: SOT-23-6
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2990 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.95 грн |
| 16+ | 19.59 грн |
| 25+ | 17.45 грн |
| 100+ | 14.18 грн |
| 250+ | 13.14 грн |
| 500+ | 12.51 грн |
| 1000+ | 11.80 грн |
| SL3400 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5.8A 41M@10V 1.4W 700MV 1 N-
Packaging: Tape & Reel (TR)
Description: 30V 5.8A 41M@10V 1.4W 700MV 1 N-
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.16 грн |
| SL3400 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5.8A 41M@10V 1.4W 700MV 1 N-
Packaging: Cut Tape (CT)
Description: 30V 5.8A 41M@10V 1.4W 700MV 1 N-
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL3400D |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5.8A 1.2W 40M@4.5V 4A SOT-23
Packaging: Tape & Reel (TR)
Description: 30V 5.8A 1.2W 40M@4.5V 4A SOT-23
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.87 грн |
| SL3400D |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5.8A 1.2W 40M@4.5V 4A SOT-23
Packaging: Cut Tape (CT)
Description: 30V 5.8A 1.2W 40M@4.5V 4A SOT-23
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL3401 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 85M@2.5V 350MW 1.3V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Description: 30V 4.1A 85M@2.5V 350MW 1.3V@250
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.15 грн |
| SL3401 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 85M@2.5V 350MW 1.3V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
Description: 30V 4.1A 85M@2.5V 350MW 1.3V@250
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 954 pF @ 15 V
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| SL3401B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.2A 1.4W 64M@4.5V 1A SOT-23
Packaging: Tape & Reel (TR)
Description: 30V 4.2A 1.4W 64M@4.5V 1A SOT-23
Packaging: Tape & Reel (TR)
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| SL3401B |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.2A 1.4W 64M@4.5V 1A SOT-23
Packaging: Cut Tape (CT)
Description: 30V 4.2A 1.4W 64M@4.5V 1A SOT-23
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.73 грн |
| 44+ | 6.93 грн |
| 100+ | 4.29 грн |
| 500+ | 2.93 грн |
| 1000+ | 2.57 грн |
| SL3401S |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4A 60M@10V,4A 2.5W 1 PIECE P
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
Description: 30V 4A 60M@10V,4A 2.5W 1 PIECE P
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
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| SL3401S |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4A 60M@10V,4A 2.5W 1 PIECE P
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
Description: 30V 4A 60M@10V,4A 2.5W 1 PIECE P
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
на замовлення 2603 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.95 грн |
| 47+ | 6.48 грн |
| 100+ | 3.99 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.38 грн |
| SL3402 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4A 1.5W 60M@4.5V 1.5V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 24 V
Description: 30V 4A 1.5W 60M@4.5V 1.5V@250UA
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 24 V
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| SL3402 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4A 1.5W 60M@4.5V 1.5V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 24 V
Description: 30V 4A 1.5W 60M@4.5V 1.5V@250UA
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 24 V
на замовлення 2864 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.95 грн |
| 49+ | 6.25 грн |
| 100+ | 3.86 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.30 грн |
| SL3404 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5A 1.4W 1 N-CHANNEL SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 15 V
Description: 30V 5A 1.4W 1 N-CHANNEL SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 15 V
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| SL3404 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5A 1.4W 1 N-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 15 V
Description: 30V 5A 1.4W 1 N-CHANNEL SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 15 V
на замовлення 2284 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 12.52 грн |
| 43+ | 7.08 грн |
| 100+ | 4.39 грн |
| 500+ | 3.00 грн |
| 1000+ | 2.63 грн |
| SL3405 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 2.6A 1W 180M@4.5V 2.3V@250UA
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: 30V 2.6A 1W 180M@4.5V 2.3V@250UA
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.56 грн |
| SL3405 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 2.6A 1W 180M@4.5V 2.3V@250UA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 15 V
Description: 30V 2.6A 1W 180M@4.5V 2.3V@250UA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
FET Type: P-Channel
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 15 V
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| SL3406 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5.6A 40M@4.5V 1.2W 2.2V@250U
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
Description: 30V 5.6A 40M@4.5V 1.2W 2.2V@250U
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
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од. на суму грн.
| SL3406 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 5.6A 40M@4.5V 1.2W 2.2V@250U
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: 30V 5.6A 40M@4.5V 1.2W 2.2V@250U
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.08 грн |
| 36+ | 8.51 грн |
| 100+ | 5.28 грн |
| 500+ | 3.62 грн |
| 1000+ | 3.19 грн |
| SL3407 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 95M@4.5V,4A 1.4W 1.5V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: 30V 4.1A 95M@4.5V,4A 1.4W 1.5V 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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| SL3407 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.1A 95M@4.5V,4A 1.4W 1.5V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: 30V 4.1A 95M@4.5V,4A 1.4W 1.5V 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.1A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
на замовлення 2798 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.30 грн |
| 39+ | 7.91 грн |
| 100+ | 4.90 грн |
| 500+ | 3.35 грн |
| 1000+ | 2.95 грн |
| SL3407A |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.2A 1.4W 85M@4.5V 3A 2.5V@2
Packaging: Tape & Reel (TR)
Description: 30V 4.2A 1.4W 85M@4.5V 3A 2.5V@2
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.15 грн |
| SL3407A |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 30V 4.2A 1.4W 85M@4.5V 3A 2.5V@2
Packaging: Cut Tape (CT)
Description: 30V 4.2A 1.4W 85M@4.5V 3A 2.5V@2
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL3420 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 6A 1W 35M@4.5V 3A SOT-23
Packaging: Tape & Reel (TR)
Description: 20V 6A 1W 35M@4.5V 3A SOT-23
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 1.96 грн |
| SL3420 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 20V 6A 1W 35M@4.5V 3A SOT-23
Packaging: Cut Tape (CT)
Description: 20V 6A 1W 35M@4.5V 3A SOT-23
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL3904 |
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Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: TRANS NPN 40V 0.2A SOT-23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 40V 0.2A SOT-23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 0.71 грн |
| SL3904 |
![]() |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: TRANS NPN 40V 0.2A SOT-23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 40V 0.2A SOT-23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SL4056E |
Виробник: Shenzhen Slkormicro Semicon Co., Ltd.
Description: 4.2V 1000MA ESOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-SOP
Charge Current - Max: 1A
Programmable Features: Current, Voltage
Fault Protection: Reverse Battery
Voltage - Supply (Max): 6.5V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Description: 4.2V 1000MA ESOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C
Battery Chemistry: Lithium Ion
Supplier Device Package: 8-SOP
Charge Current - Max: 1A
Programmable Features: Current, Voltage
Fault Protection: Reverse Battery
Voltage - Supply (Max): 6.5V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
товару немає в наявності
В кошику
од. на суму грн.












