Продукція > SMC DIODE SOLUTIONS > Всі товари виробника SMC DIODE SOLUTIONS (7350) > Сторінка 123 з 123
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| TPK15KP60A | SMC DIODE SOLUTIONS |
 Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 15kW; 66.7÷73.7V; 156A; unidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 156A Semiconductor structure: unidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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S3D60065H2 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 60A; TO247-2,TO247AC Max. off-state voltage: 650V Load current: 60A Max. forward impulse current: 0.5kA Case: TO247-2; TO247AC Kind of package: tube Semiconductor structure: single diode Mounting: THT Type of diode: Schottky rectifying Technology: SiC Leakage current: 50µA Power dissipation: 484W Max. forward voltage: 2V Max. load current: 128A |
на замовлення 17 шт: термін постачання 21-30 дні (днів) |
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SMAJ45CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Manufacturer series: SMAJ Kind of package: reel |
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SMAJ45ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Manufacturer series: SMAJ Kind of package: reel |
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 +1 |
S2M0120120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 66A Power dissipation: 156W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 212mΩ Mounting: SMD Gate charge: 29.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
на замовлення 49 шт: термін постачання 21-30 дні (днів) |
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S2M0160120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL Mounting: SMD Technology: SiC Case: TOLL Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 26.5nC On-state resistance: 0.3Ω Power dissipation: 121W Drain current: 12A Pulsed drain current: 40A Drain-source voltage: 1.2kV Kind of package: reel; tape |
на замовлення 40 шт: термін постачання 21-30 дні (днів) |
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SD560BTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 5A; SMB; Ufmax: 1.2V; Ir: 9uA; reel,tape Type of diode: rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.6kV Load current: 5A Semiconductor structure: single diode Capacitance: 50pF Kind of package: reel; tape Leakage current: 9µA Max. forward voltage: 1.2V |
на замовлення 7034 шт: термін постачання 21-30 дні (днів) |
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P4SMF36A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40...36.8V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Manufacturer series: P4SMF Kind of package: reel |
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| SMBJ64CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.9A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 5.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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| SMBJ180CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 201÷222V; 2.1A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 180V Breakdown voltage: 201...222V Max. forward impulse current: 2.1A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel |
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| MBRF2045CTU | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 500mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.5V Max. forward impulse current: 200A Kind of package: tube Leakage current: 1mA Capacitance: 750pF |
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| 20TQ045 | SMC DIODE SOLUTIONS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC; Ufmax: 730mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.73V Max. forward impulse current: 0.48kA Kind of package: tube Leakage current: 2.7mA Capacitance: 1.65nF |
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| MBRF2045 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AC; Ufmax: 600mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: single diode Case: ITO220AC Max. forward voltage: 0.6V Max. forward impulse current: 252A Kind of package: tube Leakage current: 1mA Capacitance: 1.1nF |
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| MBRF2045CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 840mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.84V Max. forward impulse current: 180A Kind of package: tube Leakage current: 1mA Capacitance: 400pF |
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| MBRF2045CTP | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 840mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.84V Max. forward impulse current: 150A Kind of package: tube Leakage current: 1mA Capacitance: 400pF |
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| SBRF2045 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AC; Ufmax: 650mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: common cathode; double Case: ITO220AC Max. forward voltage: 0.65V Max. forward impulse current: 252A Kind of package: tube Leakage current: 1mA Capacitance: 900pF |
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| SBRF2045CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 750mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 20A Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube Leakage current: 1mA Capacitance: 300pF |
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| SMBJ22CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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| SMBJ22ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 16.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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SMAJ110CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...135V Max. forward impulse current: 2.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Manufacturer series: SMAJ Kind of package: reel |
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S2M0160120K | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W Mounting: THT Technology: SiC Case: TO247-4 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 26.5nC On-state resistance: 0.3Ω Power dissipation: 130W Drain current: 12A Pulsed drain current: 40A Drain-source voltage: 1.2kV Kind of package: tube |
на замовлення 18 шт: термін постачання 21-30 дні (днів) |
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S2M0160120J | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W Mounting: SMD Technology: SiC Case: D2PAK-7 Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 26.5nC On-state resistance: 0.3Ω Power dissipation: 122W Drain current: 11A Pulsed drain current: 40A Drain-source voltage: 1.2kV Kind of package: tube |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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| SMCJ5.0CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 6.4÷7V; 163A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 163A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMCJ Kind of package: reel |
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| 12TQ045 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 710mV Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.71V Kind of package: tube Max. forward impulse current: 0.3kA Capacitance: 900pF Leakage current: 1mA |
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| 12TQ045STR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Max. forward voltage: 0.71V Kind of package: reel; tape Max. forward impulse current: 0.3kA Capacitance: 900pF Leakage current: 1mA |
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| SMBJ43ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.7A; unidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 8.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 5µA Manufacturer series: SMBJ Kind of package: reel |
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| TPK30KP60A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; unidirectional; SPD4; bulk Mounting: SMD Manufacturer series: TPK30KP Case: SPD4 Type of diode: TVS Leakage current: 10µA Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 312A Peak pulse power dissipation: 30kW Semiconductor structure: unidirectional Kind of package: bulk |
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| TPK30KP60CA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; bidirectional; SPD4; bulk Mounting: SMD Manufacturer series: TPK30KP Case: SPD4 Type of diode: TVS Leakage current: 10µA Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 312A Peak pulse power dissipation: 30kW Semiconductor structure: bidirectional Kind of package: bulk |
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| ER3JTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ir: 5uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SMC Max. forward voltage: 1.7V Leakage current: 5µA Kind of package: reel; tape |
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| 16CTQ080 | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 16A; TO220AB; Ufmax: 880mV Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 80V Load current: 16A Semiconductor structure: common cathode; double Max. forward voltage: 0.88V Kind of package: tube Max. forward impulse current: 280A Capacitance: 500pF Leakage current: 0.55mA |
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| TPK15KP60A |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 66.7÷73.7V; 156A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 156A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 66.7÷73.7V; 156A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 156A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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| S3D60065H2 |
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 60A; TO247-2,TO247AC
Max. off-state voltage: 650V
Load current: 60A
Max. forward impulse current: 0.5kA
Case: TO247-2; TO247AC
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Power dissipation: 484W
Max. forward voltage: 2V
Max. load current: 128A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 60A; TO247-2,TO247AC
Max. off-state voltage: 650V
Load current: 60A
Max. forward impulse current: 0.5kA
Case: TO247-2; TO247AC
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Power dissipation: 484W
Max. forward voltage: 2V
Max. load current: 128A
на замовлення 17 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 783.87 грн |
| 5+ | 657.87 грн |
| SMAJ45CATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
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| SMAJ45ATR |
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Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
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| S2M0120120T |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: SMD
Gate charge: 29.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 49 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 241.59 грн |
| 10+ | 151.14 грн |
| S2M0160120T |
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Mounting: SMD
Technology: SiC
Case: TOLL
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 121W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 121W; TOLL
Mounting: SMD
Technology: SiC
Case: TOLL
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 121W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: reel; tape
на замовлення 40 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 209.03 грн |
| 10+ | 129.67 грн |
| SD560BTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; SMB; Ufmax: 1.2V; Ir: 9uA; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 9µA
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 5A; SMB; Ufmax: 1.2V; Ir: 9uA; reel,tape
Type of diode: rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 5A
Semiconductor structure: single diode
Capacitance: 50pF
Kind of package: reel; tape
Leakage current: 9µA
Max. forward voltage: 1.2V
на замовлення 7034 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.00 грн |
| 85+ | 4.69 грн |
| 100+ | 4.39 грн |
| 250+ | 4.19 грн |
| 500+ | 3.77 грн |
| 1000+ | 3.72 грн |
| P4SMF36A |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...36.8V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMF
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40÷36.8V; 6.9A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40...36.8V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P4SMF
Kind of package: reel
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| SMBJ64CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.9A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 71.1÷78.6V; 5.9A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 5.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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| SMBJ180CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 201÷222V; 2.1A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 201...222V
Max. forward impulse current: 2.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 201÷222V; 2.1A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 180V
Breakdown voltage: 201...222V
Max. forward impulse current: 2.1A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel
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| MBRF2045CTU |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 500mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.5V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 1mA
Capacitance: 750pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 500mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.5V
Max. forward impulse current: 200A
Kind of package: tube
Leakage current: 1mA
Capacitance: 750pF
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| 20TQ045 | |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC; Ufmax: 730mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.73V
Max. forward impulse current: 0.48kA
Kind of package: tube
Leakage current: 2.7mA
Capacitance: 1.65nF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; TO220AC; Ufmax: 730mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.73V
Max. forward impulse current: 0.48kA
Kind of package: tube
Leakage current: 2.7mA
Capacitance: 1.65nF
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| MBRF2045 |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AC; Ufmax: 600mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 0.6V
Max. forward impulse current: 252A
Kind of package: tube
Leakage current: 1mA
Capacitance: 1.1nF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AC; Ufmax: 600mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: single diode
Case: ITO220AC
Max. forward voltage: 0.6V
Max. forward impulse current: 252A
Kind of package: tube
Leakage current: 1mA
Capacitance: 1.1nF
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| MBRF2045CT |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 840mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: tube
Leakage current: 1mA
Capacitance: 400pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 840mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: tube
Leakage current: 1mA
Capacitance: 400pF
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| MBRF2045CTP |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 840mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 400pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 840mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.84V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 400pF
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| SBRF2045 |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AC; Ufmax: 650mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 252A
Kind of package: tube
Leakage current: 1mA
Capacitance: 900pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AC; Ufmax: 650mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 252A
Kind of package: tube
Leakage current: 1mA
Capacitance: 900pF
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| SBRF2045CT |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 750mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 300pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 20A; ITO220AB; Ufmax: 750mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Leakage current: 1mA
Capacitance: 300pF
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| SMBJ22CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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| SMBJ22ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 16.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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| SMAJ110CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 2.3A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 2.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMAJ
Kind of package: reel
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| S2M0160120K |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 130W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Mounting: THT
Technology: SiC
Case: TO247-4
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 130W
Drain current: 12A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: tube
на замовлення 18 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 245.87 грн |
| 10+ | 162.28 грн |
| S2M0160120J |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Mounting: SMD
Technology: SiC
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 122W
Drain current: 11A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Mounting: SMD
Technology: SiC
Case: D2PAK-7
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 26.5nC
On-state resistance: 0.3Ω
Power dissipation: 122W
Drain current: 11A
Pulsed drain current: 40A
Drain-source voltage: 1.2kV
Kind of package: tube
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 419.78 грн |
| 10+ | 267.29 грн |
| 50+ | 241.03 грн |
| SMCJ5.0CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 163A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMCJ
Kind of package: reel
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 6.4÷7V; 163A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 163A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMCJ
Kind of package: reel
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| 12TQ045 |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 710mV
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.71V
Kind of package: tube
Max. forward impulse current: 0.3kA
Capacitance: 900pF
Leakage current: 1mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO220AC; Ufmax: 710mV
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.71V
Kind of package: tube
Max. forward impulse current: 0.3kA
Capacitance: 900pF
Leakage current: 1mA
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| 12TQ045STR |
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.71V
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Capacitance: 900pF
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.71V
Kind of package: reel; tape
Max. forward impulse current: 0.3kA
Capacitance: 900pF
Leakage current: 1mA
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| SMBJ43ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.7A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 8.7A; unidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 8.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Kind of package: reel
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| TPK30KP60A |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; unidirectional; SPD4; bulk
Mounting: SMD
Manufacturer series: TPK30KP
Case: SPD4
Type of diode: TVS
Leakage current: 10µA
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 312A
Peak pulse power dissipation: 30kW
Semiconductor structure: unidirectional
Kind of package: bulk
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; unidirectional; SPD4; bulk
Mounting: SMD
Manufacturer series: TPK30KP
Case: SPD4
Type of diode: TVS
Leakage current: 10µA
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 312A
Peak pulse power dissipation: 30kW
Semiconductor structure: unidirectional
Kind of package: bulk
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| TPK30KP60CA |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; bidirectional; SPD4; bulk
Mounting: SMD
Manufacturer series: TPK30KP
Case: SPD4
Type of diode: TVS
Leakage current: 10µA
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 312A
Peak pulse power dissipation: 30kW
Semiconductor structure: bidirectional
Kind of package: bulk
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30kW; 66.7÷73.7V; 312A; bidirectional; SPD4; bulk
Mounting: SMD
Manufacturer series: TPK30KP
Case: SPD4
Type of diode: TVS
Leakage current: 10µA
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 312A
Peak pulse power dissipation: 30kW
Semiconductor structure: bidirectional
Kind of package: bulk
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| ER3JTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 5µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; Ir: 5uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SMC
Max. forward voltage: 1.7V
Leakage current: 5µA
Kind of package: reel; tape
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| 16CTQ080 | |
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Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 16A; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 16A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Kind of package: tube
Max. forward impulse current: 280A
Capacitance: 500pF
Leakage current: 0.55mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 16A; TO220AB; Ufmax: 880mV
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 80V
Load current: 16A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.88V
Kind of package: tube
Max. forward impulse current: 280A
Capacitance: 500pF
Leakage current: 0.55mA
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од. на суму грн.