Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170080) > Сторінка 1142 з 2835
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SCTL35N65G2V | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTL90N65G2V | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW100N65G2AG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 280A; 420W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 100A Power dissipation: 420W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 26mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: Automotive Gate charge: 162nC Pulsed drain current: 280A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW35N65G2V | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW35N65G2VAG | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW40N120G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 108A Power dissipation: 278W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW40N120G2VAG | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Application: automotive industry Technology: SiC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW60N120G2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW70N120G2V | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 91A; Idm: 274A; 547W; HIP247™ Polarisation: unipolar Kind of package: tube Gate charge: 150nC Kind of channel: enhancement Gate-source voltage: -10...22V Case: HIP247™ Pulsed drain current: 274A Drain-source voltage: 1.2kV Drain current: 91A On-state resistance: 30mΩ Type of transistor: N-MOSFET Power dissipation: 547W Mounting: THT кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTW90N65G2V | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA10N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 1.2kV; 10A; Idm: 24A; 110W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 24A Power dissipation: 110W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.6Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SCTWA20N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 16A Pulsed drain current: 45A Power dissipation: 175W Case: HIP247™ On-state resistance: 0.22Ω Mounting: THT Gate charge: 45nC Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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SCTWA30N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 34A Pulsed drain current: 90A Power dissipation: 270W Case: HIP247™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 105nC Kind of package: tube кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 14-21 дні (днів) |
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SCTWA35N65G2V | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA35N65G2V-4 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA40N120G2V | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 108A Power dissipation: 278W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA40N120G2V-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 107A; 277W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 107A Power dissipation: 277W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA50N120 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA60N120G2-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA70N120G2V-4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA90N65G2V | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SCTWA90N65G2V-4 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SD2932W | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 125V; 40A; 500W; M244; Pout: 300W Case: M244 Frequency: 175MHz Drain-source voltage: 125V Drain current: 40A Type of transistor: N-MOSFET Open-loop gain: 16dB Output power: 300W Power dissipation: 500W Efficiency: 60% Polarisation: unipolar Kind of package: tube Electrical mounting: FASTON connectors; soldering; THT Mechanical mounting: screw Kind of transistor: RF Kind of channel: enhancement Gate-source voltage: ±40V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SD2942W | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 130V; 40A; 500W; M244; Pout: 350W Case: M244 Frequency: 175MHz Drain-source voltage: 130V Drain current: 40A Type of transistor: N-MOSFET Open-loop gain: 17dB Output power: 350W Power dissipation: 500W Efficiency: 61% Polarisation: unipolar Kind of package: tube Electrical mounting: FASTON connectors; soldering; THT Mechanical mounting: screw Kind of transistor: RF Kind of channel: enhancement Gate-source voltage: ±40V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SERC816 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SG2525AN | STMicroelectronics |
![]() Description: IC: driver; PWM controller; DIP16; 500mA; 0.2÷5.6V; Ch: 2 Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: DIP16 Output current: 0.5A Output voltage: 0.2...5.6V Number of channels: 2 Mounting: THT Supply voltage: 8...35V кількість в упаковці: 1 шт |
на замовлення 2316 шт: термін постачання 14-21 дні (днів) |
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SG2525AP | STMicroelectronics |
![]() Description: IC: driver; PWM controller; SO16; 500mA; 0.2÷5.6V; Ch: 2; Usup: 8÷35V Type of integrated circuit: driver Kind of integrated circuit: PWM controller Case: SO16 Output current: 0.5A Output voltage: 0.2...5.6V Number of channels: 2 Mounting: SMD Supply voltage: 8...35V кількість в упаковці: 1000 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SG3524N | STMicroelectronics |
![]() Description: IC: driver; flyback,push-pull; PWM controller; DIP16; 100mA; Ch: 1 Type of integrated circuit: driver Topology: flyback; push-pull Kind of integrated circuit: PWM controller Case: DIP16 Output current: 0.1A Number of channels: 1 Mounting: SMD Operating temperature: 0...70°C Application: SMPS Frequency: 0.45MHz Kind of package: tube Supply voltage: 8...40V кількість в упаковці: 1 шт |
на замовлення 34 шт: термін постачання 14-21 дні (днів) |
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SG3524P | STMicroelectronics |
![]() Description: IC: driver; flyback,push-pull; PWM controller; SO16; 100mA; Ch: 1 Type of integrated circuit: driver Topology: flyback; push-pull Kind of integrated circuit: PWM controller Case: SO16 Output current: 0.1A Number of channels: 1 Mounting: SMD Operating temperature: 0...70°C Application: SMPS Frequency: 0.45MHz Kind of package: tube Supply voltage: 8...40V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SGT120R65AL | STMicroelectronics |
![]() Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 9A Pulsed drain current: 36A Case: PowerFLAT 5x6 Gate-source voltage: -10...7V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 3nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 192W кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SLVU2.8-4A1 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SLVU2.8-8A1 | STMicroelectronics |
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на замовлення 2100 шт: термін постачання 14-21 дні (днів) |
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SM15T100A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 11A Breakdown voltage: 100V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 85.5V кількість в упаковці: 1 шт |
на замовлення 1429 шт: термін постачання 14-21 дні (днів) |
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SM15T100CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 11A Breakdown voltage: 100V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 85.5V кількість в упаковці: 1 шт |
на замовлення 2480 шт: термін постачання 14-21 дні (днів) |
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SM15T12A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 90A Breakdown voltage: 12V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 10.2V кількість в упаковці: 1 шт |
на замовлення 610 шт: термін постачання 14-21 дні (днів) |
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SM15T12CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 90A Breakdown voltage: 12V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 10.2V кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM15T150CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 7.2A Breakdown voltage: 150V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 128V кількість в упаковці: 1 шт |
на замовлення 1179 шт: термін постачання 14-21 дні (днів) |
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SM15T15A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 71A Breakdown voltage: 15V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 12.8V кількість в упаковці: 1 шт |
на замовлення 1785 шт: термін постачання 14-21 дні (днів) |
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SM15T15CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 15V; 71A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 71A Breakdown voltage: 15V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 12.8V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM15T18A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 59.5A Breakdown voltage: 18V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 15.3V кількість в упаковці: 1 шт |
на замовлення 147 шт: термін постачання 14-21 дні (днів) |
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SM15T18CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 18V; 59.5A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 59.5A Breakdown voltage: 18V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 15.3V кількість в упаковці: 1 шт |
на замовлення 2085 шт: термін постачання 14-21 дні (днів) |
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SM15T200A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 5.5A Breakdown voltage: 200V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 171V кількість в упаковці: 1 шт |
на замовлення 1900 шт: термін постачання 14-21 дні (днів) |
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SM15T200CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 5.5A Breakdown voltage: 200V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 171V кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM15T220A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 4.6A Breakdown voltage: 220V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 188V кількість в упаковці: 1 шт |
на замовлення 1914 шт: термін постачання 14-21 дні (днів) |
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SM15T220CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 4.6A Breakdown voltage: 220V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 188V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SM15T22A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 49A Breakdown voltage: 22V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 18.8V кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM15T22CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 4.6A Breakdown voltage: 22V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 18.8V кількість в упаковці: 1 шт |
на замовлення 4245 шт: термін постачання 14-21 дні (днів) |
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SM15T24A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 45A Breakdown voltage: 24V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 20.5V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SM15T24CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 45A Breakdown voltage: 24V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 20.5V кількість в упаковці: 2500 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM15T27A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 40A Breakdown voltage: 27V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 23.1V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SM15T30A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 36A Breakdown voltage: 30V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 25.6V кількість в упаковці: 1 шт |
на замовлення 1709 шт: термін постачання 14-21 дні (днів) |
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SM15T30CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 36A Breakdown voltage: 30V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 25.6V кількість в упаковці: 1 шт |
на замовлення 831 шт: термін постачання 14-21 дні (днів) |
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SM15T33A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; SMC; reel,tape Case: SMC Max. off-state voltage: 28.2V Semiconductor structure: unidirectional Max. forward impulse current: 33A Breakdown voltage: 33V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 1627 шт: термін постачання 14-21 дні (днів) |
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SM15T33CA | STMicroelectronics |
![]() ![]() Description: Diode: TVS; 1.5kW; 33V; 33A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 33A Breakdown voltage: 33V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 28.2V кількість в упаковці: 1 шт |
на замовлення 151 шт: термін постачання 14-21 дні (днів) |
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SM15T36A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 30A Breakdown voltage: 36V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 30.8V кількість в упаковці: 1 шт |
на замовлення 8 шт: термін постачання 14-21 дні (днів) |
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SM15T36CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 30A Breakdown voltage: 36V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 30.8V кількість в упаковці: 1 шт |
на замовлення 22471 шт: термін постачання 14-21 дні (днів) |
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SM15T39A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 28A Breakdown voltage: 39V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 33.3V кількість в упаковці: 1 шт |
на замовлення 1358 шт: термін постачання 14-21 дні (днів) |
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SM15T39CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 39V; 28A; bidirectional; SMC; reel,tape Type of diode: TVS Case: SMC Max. off-state voltage: 33.3V Semiconductor structure: bidirectional Max. forward impulse current: 28A Breakdown voltage: 39V Leakage current: 1µA Kind of package: reel; tape Peak pulse power dissipation: 1.5kW Mounting: SMD кількість в упаковці: 1 шт |
на замовлення 2556 шт: термін постачання 14-21 дні (днів) |
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SM15T56CAY | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 56V; 14.3A; bidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: bidirectional Max. forward impulse current: 14.3A Breakdown voltage: 56V Leakage current: 1µA Application: automotive industry Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 47.6V кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SM15T68A | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; SMC; reel,tape Mounting: SMD Semiconductor structure: unidirectional Max. forward impulse current: 16.3A Breakdown voltage: 68V Leakage current: 1µA Kind of package: reel; tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: SMC Max. off-state voltage: 58.1V кількість в упаковці: 1 шт |
на замовлення 1196 шт: термін постачання 14-21 дні (днів) |
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SCTL35N65G2V |
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Виробник: STMicroelectronics
SCTL35N65G2V SMD N channel transistors
SCTL35N65G2V SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTL90N65G2V |
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Виробник: STMicroelectronics
SCTL90N65G2V SMD N channel transistors
SCTL90N65G2V SMD N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTW100N65G2AG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 280A; 420W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 420W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 26mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Gate charge: 162nC
Pulsed drain current: 280A
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 100A; Idm: 280A; 420W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 100A
Power dissipation: 420W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 26mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: Automotive
Gate charge: 162nC
Pulsed drain current: 280A
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTW35N65G2V |
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Виробник: STMicroelectronics
SCTW35N65G2V THT N channel transistors
SCTW35N65G2V THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTW35N65G2VAG |
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Виробник: STMicroelectronics
SCTW35N65G2VAG THT N channel transistors
SCTW35N65G2VAG THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTW40N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTW40N120G2VAG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Application: automotive industry
Technology: SiC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Application: automotive industry
Technology: SiC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTW60N120G2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTW70N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 91A; Idm: 274A; 547W; HIP247™
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Case: HIP247™
Pulsed drain current: 274A
Drain-source voltage: 1.2kV
Drain current: 91A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 547W
Mounting: THT
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 91A; Idm: 274A; 547W; HIP247™
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Kind of channel: enhancement
Gate-source voltage: -10...22V
Case: HIP247™
Pulsed drain current: 274A
Drain-source voltage: 1.2kV
Drain current: 91A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 547W
Mounting: THT
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTW90N65G2V |
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Виробник: STMicroelectronics
SCTW90N65G2V THT N channel transistors
SCTW90N65G2V THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTWA10N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 10A; Idm: 24A; 110W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 110W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 10A; Idm: 24A; 110W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 24A
Power dissipation: 110W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTWA20N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 175W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 16A
Pulsed drain current: 45A
Power dissipation: 175W
Case: HIP247™
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 1376.22 грн |
2+ | 1003.16 грн |
4+ | 913.72 грн |
SCTWA30N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 34A
Pulsed drain current: 90A
Power dissipation: 270W
Case: HIP247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
1+ | 2337.50 грн |
2+ | 2132.08 грн |
3+ | 2052.19 грн |
SCTWA35N65G2V |
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Виробник: STMicroelectronics
SCTWA35N65G2V THT N channel transistors
SCTWA35N65G2V THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTWA35N65G2V-4 |
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Виробник: STMicroelectronics
SCTWA35N65G2V-4 THT N channel transistors
SCTWA35N65G2V-4 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTWA40N120G2V |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 108A; 278W; HIP247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTWA40N120G2V-4 |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 107A
Power dissipation: 277W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 36A; Idm: 107A; 277W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 107A
Power dissipation: 277W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTWA50N120 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTWA60N120G2-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTWA70N120G2V-4 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SCTWA90N65G2V |
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Виробник: STMicroelectronics
SCTWA90N65G2V THT N channel transistors
SCTWA90N65G2V THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SCTWA90N65G2V-4 |
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Виробник: STMicroelectronics
SCTWA90N65G2V-4 THT N channel transistors
SCTWA90N65G2V-4 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
SD2932W |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 125V; 40A; 500W; M244; Pout: 300W
Case: M244
Frequency: 175MHz
Drain-source voltage: 125V
Drain current: 40A
Type of transistor: N-MOSFET
Open-loop gain: 16dB
Output power: 300W
Power dissipation: 500W
Efficiency: 60%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: FASTON connectors; soldering; THT
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±40V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 125V; 40A; 500W; M244; Pout: 300W
Case: M244
Frequency: 175MHz
Drain-source voltage: 125V
Drain current: 40A
Type of transistor: N-MOSFET
Open-loop gain: 16dB
Output power: 300W
Power dissipation: 500W
Efficiency: 60%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: FASTON connectors; soldering; THT
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±40V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SD2942W |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 130V; 40A; 500W; M244; Pout: 350W
Case: M244
Frequency: 175MHz
Drain-source voltage: 130V
Drain current: 40A
Type of transistor: N-MOSFET
Open-loop gain: 17dB
Output power: 350W
Power dissipation: 500W
Efficiency: 61%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: FASTON connectors; soldering; THT
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±40V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 130V; 40A; 500W; M244; Pout: 350W
Case: M244
Frequency: 175MHz
Drain-source voltage: 130V
Drain current: 40A
Type of transistor: N-MOSFET
Open-loop gain: 17dB
Output power: 350W
Power dissipation: 500W
Efficiency: 61%
Polarisation: unipolar
Kind of package: tube
Electrical mounting: FASTON connectors; soldering; THT
Mechanical mounting: screw
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±40V
кількість в упаковці: 1 шт
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од. на суму грн.
SERC816 |
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Виробник: STMicroelectronics
SERC816 Interfaces others - integrated circuits
SERC816 Interfaces others - integrated circuits
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SG2525AN |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; DIP16; 500mA; 0.2÷5.6V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Mounting: THT
Supply voltage: 8...35V
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; DIP16; 500mA; 0.2÷5.6V; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Mounting: THT
Supply voltage: 8...35V
кількість в упаковці: 1 шт
на замовлення 2316 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 129.42 грн |
10+ | 92.41 грн |
20+ | 54.13 грн |
55+ | 50.46 грн |
SG2525AP |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; SO16; 500mA; 0.2÷5.6V; Ch: 2; Usup: 8÷35V
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Mounting: SMD
Supply voltage: 8...35V
кількість в упаковці: 1000 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; PWM controller; SO16; 500mA; 0.2÷5.6V; Ch: 2; Usup: 8÷35V
Type of integrated circuit: driver
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.5A
Output voltage: 0.2...5.6V
Number of channels: 2
Mounting: SMD
Supply voltage: 8...35V
кількість в упаковці: 1000 шт
товару немає в наявності
В кошику
од. на суму грн.
SG3524N |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; DIP16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.1A
Number of channels: 1
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
Supply voltage: 8...40V
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; DIP16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: DIP16
Output current: 0.1A
Number of channels: 1
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
Supply voltage: 8...40V
кількість в упаковці: 1 шт
на замовлення 34 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
2+ | 159.06 грн |
9+ | 131.47 грн |
24+ | 119.26 грн |
50+ | 117.43 грн |
SG3524P |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; SO16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.1A
Number of channels: 1
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
Supply voltage: 8...40V
кількість в упаковці: 1 шт
Category: Voltage regulators - PWM circuits
Description: IC: driver; flyback,push-pull; PWM controller; SO16; 100mA; Ch: 1
Type of integrated circuit: driver
Topology: flyback; push-pull
Kind of integrated circuit: PWM controller
Case: SO16
Output current: 0.1A
Number of channels: 1
Mounting: SMD
Operating temperature: 0...70°C
Application: SMPS
Frequency: 0.45MHz
Kind of package: tube
Supply voltage: 8...40V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SGT120R65AL |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Case: PowerFLAT 5x6
Gate-source voltage: -10...7V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 192W
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 9A; Idm: 36A; 192W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 9A
Pulsed drain current: 36A
Case: PowerFLAT 5x6
Gate-source voltage: -10...7V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 3nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 192W
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SLVU2.8-4A1 |
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Виробник: STMicroelectronics
SLVU2.8-4A1 Protection diodes - arrays
SLVU2.8-4A1 Protection diodes - arrays
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В кошику
од. на суму грн.
SLVU2.8-8A1 |
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Виробник: STMicroelectronics
SLVU2.8-8A1 Protection diodes - arrays
SLVU2.8-8A1 Protection diodes - arrays
на замовлення 2100 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 109.76 грн |
32+ | 34.22 грн |
87+ | 32.29 грн |
SM15T100A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 85.5V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 85.5V
кількість в упаковці: 1 шт
на замовлення 1429 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.83 грн |
10+ | 69.64 грн |
44+ | 24.59 грн |
120+ | 23.30 грн |
SM15T100CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 85.5V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 100V; 11A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 11A
Breakdown voltage: 100V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 85.5V
кількість в упаковці: 1 шт
на замовлення 2480 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 95.83 грн |
10+ | 67.83 грн |
41+ | 26.60 грн |
111+ | 25.14 грн |
SM15T12A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 10.2V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 10.2V
кількість в упаковці: 1 шт
на замовлення 610 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 74.10 грн |
10+ | 59.64 грн |
53+ | 20.18 грн |
146+ | 19.08 грн |
SM15T12CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 10.2V
кількість в упаковці: 2500 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 90A
Breakdown voltage: 12V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 10.2V
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T150CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 7.2A
Breakdown voltage: 150V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 128V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 7.2A
Breakdown voltage: 150V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 128V
кількість в упаковці: 1 шт
на замовлення 1179 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 90.89 грн |
10+ | 70.78 грн |
41+ | 26.05 грн |
113+ | 24.59 грн |
SM15T15A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 12.8V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 12.8V
кількість в упаковці: 1 шт
на замовлення 1785 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.11 грн |
10+ | 60.88 грн |
25+ | 55.04 грн |
59+ | 18.35 грн |
161+ | 17.34 грн |
SM15T15CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 12.8V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 15V; 71A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 71A
Breakdown voltage: 15V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 12.8V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T18A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 15.3V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 15.3V
кількість в упаковці: 1 шт
на замовлення 147 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.12 грн |
10+ | 54.49 грн |
50+ | 44.49 грн |
61+ | 17.61 грн |
167+ | 16.60 грн |
SM15T18CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 15.3V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 59.5A
Breakdown voltage: 18V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 15.3V
кількість в упаковці: 1 шт
на замовлення 2085 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 87.93 грн |
10+ | 63.92 грн |
50+ | 50.55 грн |
54+ | 19.82 грн |
149+ | 18.71 грн |
SM15T200A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 200V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 200V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
кількість в упаковці: 1 шт
на замовлення 1900 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.11 грн |
10+ | 55.45 грн |
50+ | 21.56 грн |
137+ | 20.37 грн |
SM15T200CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 200V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
кількість в упаковці: 2500 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 200V; 5.5A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 5.5A
Breakdown voltage: 200V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 171V
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T220A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 188V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 188V
кількість в упаковці: 1 шт
на замовлення 1914 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 79.04 грн |
10+ | 61.73 грн |
50+ | 21.74 грн |
135+ | 20.64 грн |
SM15T220CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 188V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 220V; 4.6A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 4.6A
Breakdown voltage: 220V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 188V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T22A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 49A
Breakdown voltage: 22V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 18.8V
кількість в упаковці: 2500 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 49A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 49A
Breakdown voltage: 22V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 18.8V
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T22CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 4.6A
Breakdown voltage: 22V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 18.8V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22V; 4.6A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 4.6A
Breakdown voltage: 22V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 18.8V
кількість в упаковці: 1 шт
на замовлення 4245 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 70.14 грн |
10+ | 58.49 грн |
62+ | 17.34 грн |
170+ | 16.33 грн |
5000+ | 15.96 грн |
SM15T24A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 20.5V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 20.5V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T24CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 20.5V
кількість в упаковці: 2500 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24V; 45A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 45A
Breakdown voltage: 24V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 20.5V
кількість в упаковці: 2500 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T27A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 23.1V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 27V; 40A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Breakdown voltage: 27V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 23.1V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T30A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 25.6V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 25.6V
кількість в упаковці: 1 шт
на замовлення 1709 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.11 грн |
10+ | 61.26 грн |
25+ | 55.41 грн |
61+ | 17.52 грн |
168+ | 16.60 грн |
SM15T30CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 25.6V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 36A
Breakdown voltage: 30V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 25.6V
кількість в упаковці: 1 шт
на замовлення 831 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 75.08 грн |
10+ | 57.54 грн |
50+ | 45.32 грн |
51+ | 20.92 грн |
141+ | 19.82 грн |
10000+ | 19.08 грн |
SM15T33A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; SMC; reel,tape
Case: SMC
Max. off-state voltage: 28.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: SMD
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; unidirectional; SMC; reel,tape
Case: SMC
Max. off-state voltage: 28.2V
Semiconductor structure: unidirectional
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 1627 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 80.02 грн |
10+ | 58.30 грн |
50+ | 46.14 грн |
61+ | 17.61 грн |
168+ | 16.60 грн |
SM15T33CA | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 28.2V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33V; 33A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 33A
Breakdown voltage: 33V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 28.2V
кількість в упаковці: 1 шт
на замовлення 151 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
6+ | 55.33 грн |
55+ | 20.20 грн |
151+ | 18.35 грн |
SM15T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 30A
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 30.8V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 30A
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 30.8V
кількість в упаковці: 1 шт
на замовлення 8 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 87.93 грн |
5+ | 59.45 грн |
10+ | 49.81 грн |
50+ | 43.30 грн |
54+ | 19.91 грн |
148+ | 18.81 грн |
SM15T36CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 30A
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 30.8V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36V; 30A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 30A
Breakdown voltage: 36V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 30.8V
кількість в упаковці: 1 шт
на замовлення 22471 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 63.23 грн |
10+ | 46.59 грн |
50+ | 28.71 грн |
58+ | 18.53 грн |
159+ | 17.52 грн |
500+ | 17.25 грн |
SM15T39A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 28A
Breakdown voltage: 39V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 33.3V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 28A
Breakdown voltage: 39V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 33.3V
кількість в упаковці: 1 шт
на замовлення 1358 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.11 грн |
10+ | 64.21 грн |
25+ | 58.53 грн |
63+ | 17.16 грн |
171+ | 16.24 грн |
SM15T39CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; bidirectional; SMC; reel,tape
Type of diode: TVS
Case: SMC
Max. off-state voltage: 33.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 39V
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Mounting: SMD
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; bidirectional; SMC; reel,tape
Type of diode: TVS
Case: SMC
Max. off-state voltage: 33.3V
Semiconductor structure: bidirectional
Max. forward impulse current: 28A
Breakdown voltage: 39V
Leakage current: 1µA
Kind of package: reel; tape
Peak pulse power dissipation: 1.5kW
Mounting: SMD
кількість в упаковці: 1 шт
на замовлення 2556 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
3+ | 101.76 грн |
10+ | 66.02 грн |
52+ | 20.82 грн |
142+ | 19.72 грн |
SM15T56CAY |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 56V; 14.3A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 14.3A
Breakdown voltage: 56V
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 47.6V
кількість в упаковці: 1 шт
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 56V; 14.3A; bidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: bidirectional
Max. forward impulse current: 14.3A
Breakdown voltage: 56V
Leakage current: 1µA
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 47.6V
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
SM15T68A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 16.3A
Breakdown voltage: 68V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 58.1V
кількість в упаковці: 1 шт
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 68V; 16.3A; unidirectional; SMC; reel,tape
Mounting: SMD
Semiconductor structure: unidirectional
Max. forward impulse current: 16.3A
Breakdown voltage: 68V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Case: SMC
Max. off-state voltage: 58.1V
кількість в упаковці: 1 шт
на замовлення 1196 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна |
---|---|
4+ | 78.05 грн |
10+ | 65.16 грн |
25+ | 58.90 грн |
58+ | 18.67 грн |
158+ | 17.65 грн |