Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (127264) > Сторінка 2046 з 2122
| Фото | Назва | Виробник | Інформація |
Доступність |
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STF8N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A Gate charge: 16.5nC |
на замовлення 133 шт: термін постачання 14-30 дні (днів) |
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| STL8N80K5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.5A Pulsed drain current: 18A Power dissipation: 42W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ15CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 17.6V; 64A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 64A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
на замовлення 629 шт: термін постачання 14-30 дні (днів) |
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| STM8S105S4T6C | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3 Interface: I2C; IrDA; SPI; UART Clock frequency: 16MHz Mounting: SMD Family: STM8S Type of integrated circuit: STM8 microcontroller Number of 8bit timers: 1 Supply voltage: 3...5.5V DC Number of 16bit timers: 3 Number of PWM channels: 4 Number of 10bit A/D converters: 9 Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Case: LQFP44 Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TIP29C | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Mounting: THT Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TIP29A | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube |
на замовлення 334 шт: термін постачання 14-30 дні (днів) |
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BAT30SWFILM | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 0.53V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 569 шт: термін постачання 14-30 дні (днів) |
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SMAJ188CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209V Max. forward impulse current: 6A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMAJ188A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209V Max. forward impulse current: 6A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 423 шт: термін постачання 14-30 дні (днів) |
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SMAJ40A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 574 шт: термін постачання 14-30 дні (днів) |
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| VL53L5CXV0GC/1 | STMicroelectronics |
Category: UnclassifiedDescription: VL53L5CXV0GC/1 |
на замовлення 5598 шт: термін постачання 14-30 дні (днів) |
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| STEVAL-ILL059V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board Type of development kit: evaluation Components: STAP16DPS05; STM8A Connection: Jack 3.5mm socket Kit contents: base board Kind of integrated circuit: LED driver Additional functions: DC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5819 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.55V Load current: 1A Max. forward impulse current: 25A Max. load current: 10A Max. off-state voltage: 40V Kind of package: Ammo Pack |
на замовлення 5129 шт: термін постачання 14-30 дні (днів) |
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| STD12N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 600V; 9A; 85W; DPAK Type of transistor: N-MOSFET Drain-source voltage: 600V Drain current: 9A Power dissipation: 85W Case: DPAK Gate-source voltage: 25V Mounting: SMD Gate charge: 16nC Kind of channel: enhancement |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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| LD39130SPUR | STMicroelectronics |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.3V Output voltage: 0.8...4V Output current: 0.3A Case: DFN6 Mounting: SMD Manufacturer series: LD39130S Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1.4...5.5V Integrated circuit features: GREEN MODE pin; shutdown mode control input |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| VIPER115LSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; Ubr: 800V Operating temperature: -40...150°C Type of integrated circuit: PMIC Mounting: SMD Case: SSOP10 Input voltage: 4.5...30V Power: 12W Frequency: 60kHz Breakdown voltage: 800V Topology: buck-boost; flyback |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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STW13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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| M24C64-DRDW3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; I2C; 8kx8bit; TSSOP8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Interface: I2C Memory organisation: 8kx8bit Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
на замовлення 36000 шт: термін постачання 14-30 дні (днів) |
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| M24C64-DRMN3TP/K | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kBEEPROM; I2C; 8kx8bit; SOIC8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kB EEPROM Interface: I2C Memory organisation: 8kx8bit Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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SMBJ26A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...30.4V Max. forward impulse current: 75A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape |
на замовлення 779 шт: термін постачання 14-30 дні (днів) |
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LF50CV | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT Type of integrated circuit: voltage regulator Input voltage: 6...16V Output voltage: 5V Output current: 0.5A Case: TO220AB Mounting: THT Number of channels: 1 Operating temperature: -40...125°C Kind of package: tube Heatsink thickness: 0.51...0.6mm Voltage drop: 0.45V Tolerance: ±2% Manufacturer series: LFXX Kind of voltage regulator: fixed; LDO; linear |
на замовлення 932 шт: термін постачання 14-30 дні (днів) |
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BD677 | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
на замовлення 3824 шт: термін постачання 14-30 дні (днів) |
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| VIPER013BLSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 5V; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; 8W Type of integrated circuit: PMIC Output voltage: 5V Frequency: 60kHz Case: SSOP10 Mounting: SMD Operating temperature: -40...150°C Topology: buck-boost; flyback Input voltage: 4.5...30V Breakdown voltage: 800V Power: 8W |
на замовлення 12500 шт: термін постачання 14-30 дні (днів) |
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SMBJ10A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...11.7V Max. forward impulse current: 184A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2225 шт: термін постачання 14-30 дні (днів) |
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1N5817 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
на замовлення 3683 шт: термін постачання 14-30 дні (днів) |
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| STM32F051K8U7TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 27 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: HDMI CEC; I2C; SPI; USART x2 Kind of architecture: Cortex M0 Memory: 8kB SRAM; 64kB FLASH Number of 16bit timers: 7 Number of 32bit timers: 1 Family: STM32F0 Kind of core: 32-bit Number of 12bit D/A converters: 1 Number of 12bit A/D converters: 13 Operating temperature: -40...105°C Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STL10N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Power dissipation: 48W Case: PowerFLAT 5x6 On-state resistance: 0.66Ω Mounting: SMD Kind of channel: enhancement Gate charge: 8.8nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F411RCT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 256kBFLASH; ARM Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 50 Case: LQFP64 Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB OTG Kind of architecture: Cortex M4 Memory: 256kB FLASH Operating temperature: -40...105°C Family: ARM Kind of core: 32-bit |
на замовлення 960 шт: термін постачання 14-30 дні (днів) |
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STP35N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| Z0103MN 6AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3mA Max. forward impulse current: 8A Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD13NM60ND | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 109W Case: DPAK On-state resistance: 0.38Ω Mounting: SMD Gate charge: 24.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TS912AIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 6485 шт: термін постачання 14-30 дні (днів) |
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TS912IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 6414 шт: термін постачання 14-30 дні (днів) |
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TS912BIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 2mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 1192 шт: термін постачання 14-30 дні (днів) |
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TS912ID | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: tube Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 784 шт: термін постачання 14-30 дні (днів) |
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TS912IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 800kHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS912AIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS912BIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD243C | STMicroelectronics |
Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 115V Collector current: 6A Case: TO220 Mounting: THT Frequency: 3MHz Power: 65W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BD677A | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
на замовлення 1749 шт: термін постачання 14-30 дні (днів) |
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M24C02-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 2kb EEPROM Interface: I2C Memory organisation: 256x8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: UFDFPN5 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 2156 шт: термін постачання 14-30 дні (днів) |
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FERD30H60CTS | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 250A Case: TO220AB Max. forward voltage: 0.41V Max. load current: 60A Heatsink thickness: 0.51...0.6mm Reverse recovery time: 0.5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STL15N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Power dissipation: 52W Case: PowerFLAT 5x6 On-state resistance: 375mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STFW40N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 34A Power dissipation: 63W Case: TO3PF On-state resistance: 78mΩ Mounting: THT Gate charge: 57nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LM2903WYPT | STMicroelectronics |
Category: SMD comparatorsDescription: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape Kind of comparator: low-power Case: TSSOP8 Kind of output: open collector Type of integrated circuit: comparator Kind of package: reel; tape Mounting: SMT Operating temperature: -40...125°C Input offset current: 150nA Input bias current: 0.4µA Input offset voltage: 15mV Number of comparators: 2 Operating voltage: 2...36V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| ACS102-6TA-TR | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; TO92; 5mA Type of thyristor: triac Max. off-state voltage: 0.6kV Mounting: THT Case: TO92 Gate current: 5mA |
на замовлення 6000 шт: термін постачання 14-30 дні (днів) |
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| STD8N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 85W Case: DPAK; TO252 On-state resistance: 570mΩ Mounting: SMD Gate charge: 4nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STF18N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 25W Case: TO220FP On-state resistance: 255mΩ Mounting: THT Gate charge: 21.5nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| 1.5KE400CARL | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: 1.5KE400CARL |
на замовлення 1900 шт: термін постачання 14-30 дні (днів) |
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1N5818 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
на замовлення 2630 шт: термін постачання 14-30 дні (днів) |
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| STM32G081KBT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 30 Case: LQFP32 Supply voltage: 1.7...3.6V DC Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB Kind of architecture: Cortex M0+ Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM Memory: 36kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 13 Number of 12bit D/A converters: 2 Number of 16bit timers: 10 Number of 8bit timers: 3 Number of 32bit timers: 1 Family: STM32G0 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STH240N10F7-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: D2PAK; TO263AB On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
LD3985M28R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD Case: SOT23-5 Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Manufacturer series: LD3985 Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Voltage drop: 0.1V Output current: 0.15A Number of channels: 1 Output voltage: 2.8V Tolerance: 2...3% Input voltage: 2.5...6V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZW50-27RL | STMicroelectronics |
Category: Diodes - UnclassifiedDescription: BZW50-27RL |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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| STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 60W Case: D2PAK On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 8nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 60W Case: DPAK; TO252 On-state resistance: 1.1Ω Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STM32F439BGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.8...3.6V DC Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG Kind of architecture: Cortex M4 Memory: 256kB SRAM; 1MB FLASH Family: STM32F4 Kind of core: 32-bit |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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| STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 2MB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| STF8N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 16.5nC
на замовлення 133 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.62 грн |
| 10+ | 118.89 грн |
| 50+ | 108.91 грн |
| STL8N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.5A; Idm: 18A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.5A
Pulsed drain current: 18A
Power dissipation: 42W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ15CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 17.6V; 64A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 64A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
на замовлення 629 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.98 грн |
| 12+ | 37.00 грн |
| 50+ | 30.60 грн |
| 100+ | 27.35 грн |
| 500+ | 20.20 грн |
| STM8S105S4T6C |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Clock frequency: 16MHz
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Case: LQFP44
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP44; 3÷5.5VDC; 16bit timers: 3
Interface: I2C; IrDA; SPI; UART
Clock frequency: 16MHz
Mounting: SMD
Family: STM8S
Type of integrated circuit: STM8 microcontroller
Number of 8bit timers: 1
Supply voltage: 3...5.5V DC
Number of 16bit timers: 3
Number of PWM channels: 4
Number of 10bit A/D converters: 9
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Case: LQFP44
Kind of core: 8-bit
товару немає в наявності
В кошику
од. на суму грн.
| TIP29C |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Mounting: THT
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| TIP29A |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
на замовлення 334 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 64.47 грн |
| 12+ | 35.17 грн |
| 50+ | 27.19 грн |
| 100+ | 24.53 грн |
| BAT30SWFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 569 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.16 грн |
| 70+ | 5.99 грн |
| 74+ | 5.65 грн |
| 100+ | 4.64 грн |
| 500+ | 3.92 грн |
| SMAJ188CA-TR | ![]() |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ188A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 209V; 6A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 423 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.95 грн |
| SMAJ40A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4V; 27A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 574 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.06 грн |
| VL53L5CXV0GC/1 |
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на замовлення 5598 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3600+ | 479.01 грн |
| STEVAL-ILL059V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Connection: Jack 3.5mm socket
Kit contents: base board
Kind of integrated circuit: LED driver
Additional functions: DC/DC converter
Category: STM development kits
Description: Dev.kit: evaluation; Comp: STAP16DPS05,STM8A; base board
Type of development kit: evaluation
Components: STAP16DPS05; STM8A
Connection: Jack 3.5mm socket
Kit contents: base board
Kind of integrated circuit: LED driver
Additional functions: DC/DC converter
товару немає в наявності
В кошику
од. на суму грн.
| 1N5819 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.55V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.55V
Load current: 1A
Max. forward impulse current: 25A
Max. load current: 10A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
на замовлення 5129 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.64 грн |
| 65+ | 6.48 грн |
| 70+ | 5.99 грн |
| 100+ | 4.89 грн |
| 500+ | 3.98 грн |
| 1000+ | 3.66 грн |
| 2000+ | 3.37 грн |
| 4000+ | 3.10 грн |
| STD12N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 9A; 85W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 25V
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 600V; 9A; 85W; DPAK
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 85W
Case: DPAK
Gate-source voltage: 25V
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 46.38 грн |
| LD39130SPUR |
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Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...4V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷4V; 0.3A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.3V
Output voltage: 0.8...4V
Output current: 0.3A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39130S
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.4...5.5V
Integrated circuit features: GREEN MODE pin; shutdown mode control input
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В кошику
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| VIPER115LSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; Ubr: 800V
Operating temperature: -40...150°C
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Power: 12W
Frequency: 60kHz
Breakdown voltage: 800V
Topology: buck-boost; flyback
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; Ubr: 800V
Operating temperature: -40...150°C
Type of integrated circuit: PMIC
Mounting: SMD
Case: SSOP10
Input voltage: 4.5...30V
Power: 12W
Frequency: 60kHz
Breakdown voltage: 800V
Topology: buck-boost; flyback
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 44.68 грн |
| STW13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 26 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.00 грн |
| 10+ | 240.27 грн |
| M24C64-DRDW3TP/K |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; I2C; 8kx8bit; TSSOP8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
на замовлення 36000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 37.96 грн |
| M24C64-DRMN3TP/K |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kBEEPROM; I2C; 8kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kB EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kBEEPROM; I2C; 8kx8bit; SOIC8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kB EEPROM
Interface: I2C
Memory organisation: 8kx8bit
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.96 грн |
| SMBJ26A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...30.4V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 28.9÷30.4V; 75A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...30.4V
Max. forward impulse current: 75A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
на замовлення 779 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.49 грн |
| 31+ | 13.72 грн |
| 36+ | 11.72 грн |
| 50+ | 10.48 грн |
| 100+ | 9.31 грн |
| 250+ | 8.06 грн |
| 500+ | 7.32 грн |
| 650+ | 6.98 грн |
| LF50CV |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; TO220AB; THT
Type of integrated circuit: voltage regulator
Input voltage: 6...16V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Heatsink thickness: 0.51...0.6mm
Voltage drop: 0.45V
Tolerance: ±2%
Manufacturer series: LFXX
Kind of voltage regulator: fixed; LDO; linear
на замовлення 932 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 86.85 грн |
| 10+ | 58.86 грн |
| 50+ | 51.55 грн |
| 100+ | 48.64 грн |
| 250+ | 45.23 грн |
| 500+ | 42.82 грн |
| BD677 |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
на замовлення 3824 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.86 грн |
| 20+ | 21.28 грн |
| 23+ | 18.21 грн |
| 50+ | 10.72 грн |
| 1000+ | 9.98 грн |
| VIPER013BLSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 5V; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; 8W
Type of integrated circuit: PMIC
Output voltage: 5V
Frequency: 60kHz
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Topology: buck-boost; flyback
Input voltage: 4.5...30V
Breakdown voltage: 800V
Power: 8W
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 5V; 60kHz; SSOP10; buck-boost,flyback; Uin: 4.5÷30V; 8W
Type of integrated circuit: PMIC
Output voltage: 5V
Frequency: 60kHz
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Topology: buck-boost; flyback
Input voltage: 4.5...30V
Breakdown voltage: 800V
Power: 8W
на замовлення 12500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.25 грн |
| SMBJ10A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...11.7V
Max. forward impulse current: 184A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.1÷11.7V; 184A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...11.7V
Max. forward impulse current: 184A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2225 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.55 грн |
| 19+ | 22.12 грн |
| 21+ | 20.04 грн |
| 50+ | 15.55 грн |
| 100+ | 13.72 грн |
| 500+ | 9.81 грн |
| 1000+ | 8.23 грн |
| 1N5817 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 3683 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.33 грн |
| 37+ | 11.47 грн |
| 40+ | 10.56 грн |
| 100+ | 7.57 грн |
| 250+ | 6.48 грн |
| 500+ | 5.71 грн |
| 1000+ | 4.97 грн |
| 2000+ | 4.27 грн |
| STM32F051K8U7TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
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| STL10N60M6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
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| STM32F411RCT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 256kBFLASH; ARM
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB FLASH
Operating temperature: -40...105°C
Family: ARM
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; LQFP64; 256kBFLASH; ARM
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 50
Case: LQFP64
Interface: I2C; IrDA; MMC; SDIO; SPI; UART; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB FLASH
Operating temperature: -40...105°C
Family: ARM
Kind of core: 32-bit
на замовлення 960 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 316.06 грн |
| STP35N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| Z0103MN 6AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: SMD
Kind of package: reel; tape
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| STD13NM60ND |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 109W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 109W
Case: DPAK
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 24.5nC
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| TS912AIDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 6485 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 96.70 грн |
| 6+ | 75.49 грн |
| 10+ | 68.92 грн |
| 25+ | 61.19 грн |
| 50+ | 56.45 грн |
| 100+ | 52.46 грн |
| 250+ | 48.39 грн |
| 500+ | 46.06 грн |
| 1000+ | 44.15 грн |
| TS912IDT | ![]() |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 6414 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.58 грн |
| 7+ | 62.85 грн |
| 10+ | 56.95 грн |
| 25+ | 50.22 грн |
| 50+ | 46.23 грн |
| 100+ | 43.07 грн |
| 250+ | 39.99 грн |
| 300+ | 39.57 грн |
| 500+ | 38.41 грн |
| TS912BIDT | ![]() |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1192 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 104.76 грн |
| 6+ | 81.48 грн |
| 10+ | 73.99 грн |
| 25+ | 65.68 грн |
| 75+ | 58.20 грн |
| 100+ | 56.53 грн |
| 250+ | 53.21 грн |
| TS912ID |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 784 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 81.48 грн |
| 7+ | 65.68 грн |
| TS912IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| TS912AIYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| TS912BIYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; 2.7÷16VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| BD243C |
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Виробник: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 115V; 6A; 65W; TO220
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 115V
Collector current: 6A
Case: TO220
Mounting: THT
Frequency: 3MHz
Power: 65W
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| BD677A |
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Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
на замовлення 1749 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.35 грн |
| 15+ | 27.77 грн |
| 50+ | 20.12 грн |
| 100+ | 17.79 грн |
| 250+ | 15.38 грн |
| 500+ | 13.97 грн |
| 1000+ | 12.89 грн |
| M24C02-FMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: I2C
Memory organisation: 256x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: UFDFPN5
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 2156 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.64 грн |
| 50+ | 9.89 грн |
| 100+ | 7.73 грн |
| 250+ | 7.32 грн |
| FERD30H60CTS |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 60A
Heatsink thickness: 0.51...0.6mm
Reverse recovery time: 0.5µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 60V; 15Ax2; tube; Ifsm: 250A; TO220AB; 500ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 60A
Heatsink thickness: 0.51...0.6mm
Reverse recovery time: 0.5µs
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| STL15N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; 52W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Power dissipation: 52W
Case: PowerFLAT 5x6
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
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| STFW40N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 34A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Power dissipation: 63W
Case: TO3PF
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 57nC
Kind of channel: enhancement
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| LM2903WYPT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape
Kind of comparator: low-power
Case: TSSOP8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 150nA
Input bias current: 0.4µA
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 2÷36V; SMT; TSSOP8; reel,tape
Kind of comparator: low-power
Case: TSSOP8
Kind of output: open collector
Type of integrated circuit: comparator
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...125°C
Input offset current: 150nA
Input bias current: 0.4µA
Input offset voltage: 15mV
Number of comparators: 2
Operating voltage: 2...36V
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| ACS102-6TA-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; TO92; 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Mounting: THT
Case: TO92
Gate current: 5mA
Category: Triacs
Description: Triac; 600V; TO92; 5mA
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Mounting: THT
Case: TO92
Gate current: 5mA
на замовлення 6000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 15.58 грн |
| STD8N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 85W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 85W
Case: DPAK; TO252
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 4nC
Kind of channel: enhancement
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| STF18N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 25W
Case: TO220FP
On-state resistance: 255mΩ
Mounting: THT
Gate charge: 21.5nC
Kind of channel: enhancement
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| 1.5KE400CARL |
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на замовлення 1900 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1900+ | 28.20 грн |
| 1N5818 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 2630 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.33 грн |
| 43+ | 9.89 грн |
| 50+ | 8.41 грн |
| 100+ | 6.61 грн |
| 250+ | 5.65 грн |
| 500+ | 5.05 грн |
| 650+ | 4.85 грн |
| 1000+ | 4.54 грн |
| 2000+ | 4.09 грн |
| STM32G081KBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: LQFP32
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 2
Number of 16bit timers: 10
Number of 8bit timers: 3
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP32; 1.7÷3.6VDC; STM32G0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 30
Case: LQFP32
Supply voltage: 1.7...3.6V DC
Interface: HDMI CEC; I2C; I2S; IrDA; LIN; SPI; USART; USB
Kind of architecture: Cortex M0+
Integrated circuit features: Brown Out Reset (BOR); DMA; PoR; PWM
Memory: 36kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 13
Number of 12bit D/A converters: 2
Number of 16bit timers: 10
Number of 8bit timers: 3
Number of 32bit timers: 1
Family: STM32G0
Kind of core: 32-bit
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| STH240N10F7-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
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| LD3985M28R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Case: SOT23-5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LD3985
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.1V
Output current: 0.15A
Number of channels: 1
Output voltage: 2.8V
Tolerance: 2...3%
Input voltage: 2.5...6V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Case: SOT23-5
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LD3985
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.1V
Output current: 0.15A
Number of channels: 1
Output voltage: 2.8V
Tolerance: 2...3%
Input voltage: 2.5...6V
Kind of package: reel; tape
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| BZW50-27RL |
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на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 69.84 грн |
| STW9NK90Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 96 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 213.99 грн |
| 10+ | 172.10 грн |
| 20+ | 159.63 грн |
| 30+ | 152.15 грн |
| 90+ | 137.18 грн |
| STB6N60M2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
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| STD6N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
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| STM32F439BGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB SRAM; 1MB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB SRAM; 1MB FLASH
Family: STM32F4
Kind of core: 32-bit
на замовлення 26 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1007.27 грн |
| 3+ | 860.49 грн |
| 10+ | 748.26 грн |
| STM32F427ZIT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
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| SM6T36A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
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од. на суму грн.




















