Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (131480) > Сторінка 223 з 2192
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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STP3N62K3 | STMicroelectronics |
 Description: MOSFET N-CH 620V 2.7A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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В кошику од. на суму грн. | ||||||||||||
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STP6N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 5.5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP85N3LH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STW15NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 14A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STW21NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 17A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW23NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 19.5A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STW25NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A TO247-3 Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW3040 | STMicroelectronics |
Description: TRANS NPN 400V 30A TO247-3 Power - Max: 160 W Voltage - Collector Emitter Breakdown (Max): 400 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Supplier Device Package: TO-247-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 6A, 5V Current - Collector Cutoff (Max): 1mA Vce Saturation (Max) @ Ib, Ic: 800mV @ 4A, 20A Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Operating Temperature: 150°C (TJ) Transistor Type: NPN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STW30NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 25A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW30NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 25A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW43NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 37A TO247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 255W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STW43NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 35A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW43NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 35A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW55NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 54A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 350W (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW75NF30 | STMicroelectronics |
Description: MOSFET N-CH 300V 60A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 320W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW90NF20 | STMicroelectronics |
Description: MOSFET N-CH 200V 83A TO247-3 Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V Current - Continuous Drain (Id) @ 25°C: 83A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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STW9N150 | STMicroelectronics |
Description: MOSFET N-CH 1500V 8A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V Power Dissipation (Max): 320W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1500 V Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STY80NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 74A MAX247 Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: MAX247™ Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 447W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V Current - Continuous Drain (Id) @ 25°C: 74A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. | ||||||||||||
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DVIULC6-2P6 | STMicroelectronics |
Description: TVS DIODE 5VWM 17VC SOT666 Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-666 Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.85pF @ 825MHz Applications: General Purpose Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STB15NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 14A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STB21NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STB23NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 19.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STB25NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 21A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STB30NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STB30NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 25A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STB3N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A D2PAK Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4.5V @ 50µA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STD11NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STD3N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A DPAK Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD90N4F3 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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STGB19NC60KT4 | STMicroelectronics |
Description: IGBT 600V 35A 125W D2PAK Power - Max: 125 W Current - Collector Pulsed (Icm): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 35 A Part Status: Obsolete Gate Charge: 55 nC Test Condition: 480V, 12A, 10Ohm, 15V Switching Energy: 165µJ (on), 255µJ (off) Td (on/off) @ 25°C: 30ns/105ns Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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STL150N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 195A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 17.5A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STL65N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 65A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±22V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STL75NH3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 75A POWERFLAT Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerFlat™ (5x6) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STL80N4LLF3 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A POWERFLAT |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STPS5L60S | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 5A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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STS15N4LLF3 | STMicroelectronics |
Description: MOSFET N-CH 40V 15A 8SO Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.7W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DVIULC6-2P6 | STMicroelectronics |
Description: TVS DIODE 5VWM 17VC SOT666 Power Line Protection: Yes Voltage - Clamping (Max) @ Ipp: 17V Voltage - Breakdown (Min): 6V Unidirectional Channels: 2 Supplier Device Package: SOT-666 Voltage - Reverse Standoff (Typ): 5V Current - Peak Pulse (10/1000µs): 5A (8/20µs) Capacitance @ Frequency: 0.85pF @ 825MHz Applications: General Purpose Type: Steering (Rail to Rail) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STB15NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 14A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STB23NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 19.5A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STB3N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STD11NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
на замовлення 2489 шт: термін постачання 21-31 дні (днів) |
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STD3N62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V |
на замовлення 3046 шт: термін постачання 21-31 дні (днів) |
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STD90N4F3 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STL65N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 65A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V |
на замовлення 19 шт: термін постачання 21-31 дні (днів) |
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STL75NH3LL | STMicroelectronics |
Description: MOSFET N-CH 30V 75A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STPS5L60S | STMicroelectronics |
Description: DIODE SCHOTTKY 60V 5A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: SMC Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 47820 шт: термін постачання 21-31 дні (днів) |
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STEVAL-CCA010V1 | STMicroelectronics |
Description: BOARD EVAL TSH122 BASED Embedded: No Primary Attributes: Gain 6dB, Filter with SAG Correction Supplied Contents: Board(s) Utilized IC / Part: TSH122 Type: Video Function: Amplifier, Single Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STEVAL-ILL015V1 | STMicroelectronics |
Description: BOARD EVAL STP24DP05/STM32 BASED Part Status: Active Outputs and Type: 16 Non-Isolated Outputs Supplied Contents: Board(s), Cable(s) Utilized IC / Part: STP24DP05 Current - Output / Channel: 80mA Voltage - Input: 7.5V ~ 18V Voltage - Output: 20V Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAS70-08SFILM | STMicroelectronics |
Description: DIODE ARR SCHOTT 70V 70MA SOT323 Current - Reverse Leakage @ Vr: 10 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 70 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-323-6L Current - Average Rectified (Io) (per Diode): 70mA (DC) Diode Configuration: 3 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 9000 шт В кошику од. на суму грн. | ||||||||||||
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L2293QTR | STMicroelectronics |
Description: IC HALF BRIDG DRV 600MA 32VFQFPN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 125°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 2.8V ~ 36V Applications: DC Motors, Relays, Solenoids, Stepper Motors Current - Output / Channel: 600mA Current - Peak Output: 1.2A Voltage - Load: 2.8V ~ 36V Supplier Device Package: 32-VFQFPN (5x5) Fault Protection: Over Temperature Load Type: Inductive Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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L6229QTR | STMicroelectronics |
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.4A Interface: Parallel Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 8V ~ 52V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 8V ~ 52V Supplier Device Package: 32-VFQFPN-EP (5x5) Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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L6743DTR | STMicroelectronics |
Description: IC GATE DRVR HALF-BRIDGE 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 0°C ~ 125°C (TJ) Voltage - Supply: 5V ~ 12V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 41 V Supplier Device Package: 8-SOIC Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, - Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STCL132KRDEAW89 | STMicroelectronics |
Description: IC OSC SILICON 32.768KHZ SOT3235 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Frequency: 32.768kHz Type: Oscillator, Silicon Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.65V ~ 1.95V Supplier Device Package: SOT-323-5 Current - Supply: 60 µA |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STG4210QTR | STMicroelectronics |
Description: IC SWITCH SPST-NOX2 1.3OHM 10QFN Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 100nA Channel Capacitance (CS(off), CD(off)): 85pF Switch Time (Ton, Toff) (Max): 55ns, 30ns Channel-to-Channel Matching (ΔRon): 10mOhm Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST - NO Crosstalk: -72dB @ 100kHz Charge Injection: 49pC Voltage - Supply, Single (V+): 1.65V ~ 4.3V Supplier Device Package: 10-QFN (1.8x1.4) -3db Bandwidth: 58MHz On-State Resistance (Max): 1.3Ohm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STHDLS101TQTR | STMicroelectronics |
Description: IC VIDEO LEVEL SHIFTER 48QFN Control Interface: Serial Supplier Device Package: 48-QFN-EP (7x7) Standards: HDMI 1.3 Applications: Consumer Video Voltage - Supply: 3.3V Function: Level Shifter Mounting Type: Surface Mount Package / Case: 48-QFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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STOD02PUR | STMicroelectronics |
Description: IC REG AMOLED DISPLAY 2OUT 12DFN Packaging: Tape & Reel (TR) Package / Case: 12-UFDFN Exposed Pad Voltage - Output: 4.6V, -2.3V ~ -5.9V Mounting Type: Surface Mount Number of Outputs: 2 Voltage - Input: 2.5V ~ 4.5V Operating Temperature: -40°C ~ 85°C Applications: Converter, AMOLED Display Supplier Device Package: 12-DFN (3x3) Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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STP16CPS05PTR | STMicroelectronics |
Description: IC LED DRVR LINEAR 100MA 24QSOP Packaging: Tape & Reel (TR) Package / Case: 24-SSOP (0.154", 3.90mm Width) Voltage - Output: 20V Mounting Type: Surface Mount Number of Outputs: 16 Frequency: 30MHz Type: Linear Operating Temperature: -40°C ~ 125°C (TA) Current - Output / Channel: 100mA Internal Switch(s): Yes Topology: Shift Register Supplier Device Package: 24-QSOP Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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STTS424BDN3F | STMicroelectronics |
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||
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L2293QTR | STMicroelectronics |
Description: IC HALF BRIDG DRV 600MA 32VFQFPN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -20°C ~ 125°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 2.8V ~ 36V Applications: DC Motors, Relays, Solenoids, Stepper Motors Current - Output / Channel: 600mA Current - Peak Output: 1.2A Voltage - Load: 2.8V ~ 36V Supplier Device Package: 32-VFQFPN (5x5) Fault Protection: Over Temperature Load Type: Inductive Part Status: Active |
на замовлення 4210 шт: термін постачання 21-31 дні (днів) |
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L6229QTR | STMicroelectronics |
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.4A Interface: Parallel Operating Temperature: -25°C ~ 125°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 8V ~ 52V Applications: General Purpose Technology: BiCDMOS Voltage - Load: 8V ~ 52V Supplier Device Package: 32-VFQFPN-EP (5x5) Motor Type - AC, DC: Brushless DC (BLDC) Part Status: Active |
на замовлення 4270 шт: термін постачання 21-31 дні (днів) |
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| STP3N62K3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 620V 2.7A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP6N62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 5.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 620V 5.5A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP85N3LH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 80A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STW15NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| STW21NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 17A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| STW23NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 19.5A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| STW25NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A TO247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 21A TO247-3
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 600 шт
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| STW3040 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 400V 30A TO247-3
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 6A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 4A, 20A
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Description: TRANS NPN 400V 30A TO247-3
Power - Max: 160 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Supplier Device Package: TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 6A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 800mV @ 4A, 20A
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
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| STW30NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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| STW30NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N-CH 600V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
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Мінімальне замовлення: 600 шт
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| STW43NM50N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 37A TO247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Description: MOSFET N-CH 500V 37A TO247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 255W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 18.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
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| STW43NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 50 V
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Мінімальне замовлення: 600 шт
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| STW43NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17.5A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
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Мінімальне замовлення: 600 шт
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| STW55NM50N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 54A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 500V 54A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 600 шт
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| STW75NF30 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 60A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 300V 60A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5930 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 320W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 600 шт
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| STW90NF20 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 83A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 200V 83A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 5736 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 45A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 600 шт
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| STW9N150 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Description: MOSFET N-CH 1500V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 4A, 10V
Power Dissipation (Max): 320W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 89.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
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| STY80NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 74A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 447W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 600V 74A MAX247
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: MAX247™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 447W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Мінімальне замовлення: 600 шт
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| DVIULC6-2P6 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT666
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-666
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 825MHz
Applications: General Purpose
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TVS DIODE 5VWM 17VC SOT666
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-666
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 825MHz
Applications: General Purpose
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| STB15NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 14A D2PAK
Description: MOSFET N-CH 600V 14A D2PAK
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| STB21NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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Мінімальне замовлення: 1000 шт
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| STB23NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 19.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| STB25NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 21A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| STB30NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
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Мінімальне замовлення: 1000 шт
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| STB30NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
Description: MOSFET N-CH 600V 25A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
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Мінімальне замовлення: 1000 шт
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| STB3N62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A D2PAK
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Description: MOSFET N-CH 620V 2.7A D2PAK
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
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Мінімальне замовлення: 1000 шт
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| STD11NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 10A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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| STD3N62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 620V 2.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 30.21 грн |
| STD90N4F3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 2500 шт
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| STGB19NC60KT4 |
|
Виробник: STMicroelectronics
Description: IGBT 600V 35A 125W D2PAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
Gate Charge: 55 nC
Test Condition: 480V, 12A, 10Ohm, 15V
Switching Energy: 165µJ (on), 255µJ (off)
Td (on/off) @ 25°C: 30ns/105ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 600V 35A 125W D2PAK
Power - Max: 125 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 35 A
Part Status: Obsolete
Gate Charge: 55 nC
Test Condition: 480V, 12A, 10Ohm, 15V
Switching Energy: 165µJ (on), 255µJ (off)
Td (on/off) @ 25°C: 30ns/105ns
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 1000 шт
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| STL150N3LLH5 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 195A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 195A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 1.75mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| STL65N3LLH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 65A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 65A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±22V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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| STL75NH3LL |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 3000 шт
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| STL80N4LLF3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A POWERFLAT
Description: MOSFET N-CH 40V 80A POWERFLAT
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| STPS5L60S |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 16.89 грн |
| 7500+ | 14.25 грн |
| STS15N4LLF3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 15A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 15A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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| DVIULC6-2P6 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT666
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-666
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 825MHz
Applications: General Purpose
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TVS DIODE 5VWM 17VC SOT666
Power Line Protection: Yes
Voltage - Clamping (Max) @ Ipp: 17V
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 2
Supplier Device Package: SOT-666
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 0.85pF @ 825MHz
Applications: General Purpose
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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| STB15NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 14A D2PAK
Description: MOSFET N-CH 600V 14A D2PAK
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| STB23NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 19.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| STB3N62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 620V 2.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| STD11NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 316.47 грн |
| 10+ | 201.59 грн |
| 100+ | 143.09 грн |
| 500+ | 110.82 грн |
| 1000+ | 103.29 грн |
| STD3N62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
Description: MOSFET N-CH 620V 2.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 25 V
на замовлення 3046 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.89 грн |
| 10+ | 43.96 грн |
| 100+ | 38.83 грн |
| 500+ | 33.33 грн |
| 1000+ | 31.47 грн |
| STD90N4F3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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| STL65N3LLH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Description: MOSFET N-CH 30V 65A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
на замовлення 19 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.53 грн |
| 10+ | 62.24 грн |
| STL75NH3LL |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
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| STPS5L60S |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMC
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 47820 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.83 грн |
| 10+ | 40.91 грн |
| 50+ | 30.08 грн |
| 100+ | 24.95 грн |
| 500+ | 19.15 грн |
| STEVAL-CCA010V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL TSH122 BASED
Embedded: No
Primary Attributes: Gain 6dB, Filter with SAG Correction
Supplied Contents: Board(s)
Utilized IC / Part: TSH122
Type: Video
Function: Amplifier, Single
Packaging: Bulk
Description: BOARD EVAL TSH122 BASED
Embedded: No
Primary Attributes: Gain 6dB, Filter with SAG Correction
Supplied Contents: Board(s)
Utilized IC / Part: TSH122
Type: Video
Function: Amplifier, Single
Packaging: Bulk
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| STEVAL-ILL015V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL STP24DP05/STM32 BASED
Part Status: Active
Outputs and Type: 16 Non-Isolated Outputs
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: STP24DP05
Current - Output / Channel: 80mA
Voltage - Input: 7.5V ~ 18V
Voltage - Output: 20V
Packaging: Bulk
Description: BOARD EVAL STP24DP05/STM32 BASED
Part Status: Active
Outputs and Type: 16 Non-Isolated Outputs
Supplied Contents: Board(s), Cable(s)
Utilized IC / Part: STP24DP05
Current - Output / Channel: 80mA
Voltage - Input: 7.5V ~ 18V
Voltage - Output: 20V
Packaging: Bulk
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| BAS70-08SFILM |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323-6L
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323-6L
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 9000 шт
В кошику
од. на суму грн.
| L2293QTR |
|
Виробник: STMicroelectronics
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 160.24 грн |
| L6229QTR |
|
Виробник: STMicroelectronics
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 220.71 грн |
| L6743DTR |
Виробник: STMicroelectronics
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 12V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 41 V
Supplier Device Package: 8-SOIC
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, -
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Voltage - Supply: 5V ~ 12V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 41 V
Supplier Device Package: 8-SOIC
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, -
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| STCL132KRDEAW89 |
|
Виробник: STMicroelectronics
Description: IC OSC SILICON 32.768KHZ SOT3235
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Frequency: 32.768kHz
Type: Oscillator, Silicon
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Supplier Device Package: SOT-323-5
Current - Supply: 60 µA
Description: IC OSC SILICON 32.768KHZ SOT3235
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Frequency: 32.768kHz
Type: Oscillator, Silicon
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Supplier Device Package: SOT-323-5
Current - Supply: 60 µA
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STG4210QTR |
|
Виробник: STMicroelectronics
Description: IC SWITCH SPST-NOX2 1.3OHM 10QFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 85pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -72dB @ 100kHz
Charge Injection: 49pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-QFN (1.8x1.4)
-3db Bandwidth: 58MHz
On-State Resistance (Max): 1.3Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPST-NOX2 1.3OHM 10QFN
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 85pF
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel-to-Channel Matching (ΔRon): 10mOhm
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Crosstalk: -72dB @ 100kHz
Charge Injection: 49pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-QFN (1.8x1.4)
-3db Bandwidth: 58MHz
On-State Resistance (Max): 1.3Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STHDLS101TQTR |
|
Виробник: STMicroelectronics
Description: IC VIDEO LEVEL SHIFTER 48QFN
Control Interface: Serial
Supplier Device Package: 48-QFN-EP (7x7)
Standards: HDMI 1.3
Applications: Consumer Video
Voltage - Supply: 3.3V
Function: Level Shifter
Mounting Type: Surface Mount
Package / Case: 48-QFN
Packaging: Tape & Reel (TR)
Description: IC VIDEO LEVEL SHIFTER 48QFN
Control Interface: Serial
Supplier Device Package: 48-QFN-EP (7x7)
Standards: HDMI 1.3
Applications: Consumer Video
Voltage - Supply: 3.3V
Function: Level Shifter
Mounting Type: Surface Mount
Package / Case: 48-QFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STOD02PUR |
|
Виробник: STMicroelectronics
Description: IC REG AMOLED DISPLAY 2OUT 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Voltage - Output: 4.6V, -2.3V ~ -5.9V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 2.5V ~ 4.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, AMOLED Display
Supplier Device Package: 12-DFN (3x3)
Part Status: Obsolete
Description: IC REG AMOLED DISPLAY 2OUT 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Voltage - Output: 4.6V, -2.3V ~ -5.9V
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 2.5V ~ 4.5V
Operating Temperature: -40°C ~ 85°C
Applications: Converter, AMOLED Display
Supplier Device Package: 12-DFN (3x3)
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| STP16CPS05PTR |
|
Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR 100MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Description: IC LED DRVR LINEAR 100MA 24QSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-SSOP (0.154", 3.90mm Width)
Voltage - Output: 20V
Mounting Type: Surface Mount
Number of Outputs: 16
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 100mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 24-QSOP
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STTS424BDN3F |
|
Виробник: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN
Description: IC MEMORY MOD TEMP SENSOR 8-TDFN
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| L2293QTR |
|
Виробник: STMicroelectronics
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDG DRV 600MA 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -20°C ~ 125°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 2.8V ~ 36V
Applications: DC Motors, Relays, Solenoids, Stepper Motors
Current - Output / Channel: 600mA
Current - Peak Output: 1.2A
Voltage - Load: 2.8V ~ 36V
Supplier Device Package: 32-VFQFPN (5x5)
Fault Protection: Over Temperature
Load Type: Inductive
Part Status: Active
на замовлення 4210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.10 грн |
| 10+ | 215.15 грн |
| 25+ | 197.87 грн |
| 100+ | 167.87 грн |
| 250+ | 159.37 грн |
| 500+ | 158.80 грн |
| L6229QTR |
|
Виробник: STMicroelectronics
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Description: IC MOTOR DRIVER 8V-52V 32VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.4A
Interface: Parallel
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 8V ~ 52V
Applications: General Purpose
Technology: BiCDMOS
Voltage - Load: 8V ~ 52V
Supplier Device Package: 32-VFQFPN-EP (5x5)
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
на замовлення 4270 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 395.58 грн |
| 10+ | 291.49 грн |
| 25+ | 269.06 грн |
| 100+ | 229.36 грн |
| 250+ | 220.12 грн |