Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (133806) > Сторінка 2231 з 2231
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
STGAP2SICSANCTR | STMicroelectronics |
 Category: MOSFET/IGBT driversDescription: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8 Output current: -4...4A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3.1...5.25V Output voltage: 1.7kV Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| STGAP2SICSCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8-W Output current: -4...4A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3.1...5.5V Output voltage: 1.2kV Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |
|
|
STGAP2SICSN | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SO8; Ch: 1; MOSFET Type of integrated circuit: driver Case: SO8 Number of channels: 1 Integrated circuit features: MOSFET Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
|
|
STGAP2SICSNCTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: SiC MOSFET gate driver Case: SO8 Output current: -4...4A Number of channels: 1 Integrated circuit features: galvanically isolated Mounting: SMD Operating temperature: -40...125°C Supply voltage: 3.1...5.5V Output voltage: 1.7kV Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
1.5KE39CA | STMicroelectronics |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 39V; 28A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 28A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. |
 |
LM339N | STMicroelectronics |
Category: THT comparators Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14 Type of integrated circuit: comparator Kind of comparator: low-power Delay time: 1.3µs Operating voltage: 2...36V Number of channels: 4 Mounting: THT Case: DIP14 |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
| STGAP2SICSANCTR |
|
Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.25V
Output voltage: 1.7kV
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.25V
Output voltage: 1.7kV
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STGAP2SICSCTR |
|
Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.2kV
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8-W
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.2kV
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STGAP2SICSN |
|
Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SO8; Ch: 1; MOSFET
Type of integrated circuit: driver
Case: SO8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Category: MOSFET/IGBT drivers
Description: IC: driver; SO8; Ch: 1; MOSFET
Type of integrated circuit: driver
Case: SO8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| STGAP2SICSNCTR |
|
Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.7kV
Kind of package: reel; tape
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8; -4÷4A; 1.7kV; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: SiC MOSFET gate driver
Case: SO8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 3.1...5.5V
Output voltage: 1.7kV
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| 1.5KE39CA |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 28A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 39V; 28A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| LM339N |
|
Виробник: STMicroelectronics
Category: THT comparators
Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14
Type of integrated circuit: comparator
Kind of comparator: low-power
Delay time: 1.3µs
Operating voltage: 2...36V
Number of channels: 4
Mounting: THT
Case: DIP14
Category: THT comparators
Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14
Type of integrated circuit: comparator
Kind of comparator: low-power
Delay time: 1.3µs
Operating voltage: 2...36V
Number of channels: 4
Mounting: THT
Case: DIP14
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.