Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170085) > Сторінка 256 з 2835
Фото | Назва | Виробник | Інформація |
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T1610-800G-TR | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 16 A Voltage - Off State: 800 V |
на замовлення 2172 шт: термін постачання 21-31 дні (днів) |
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STK22N6F3 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: PolarPak® Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V Power Dissipation (Max): 5.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PolarPak® Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD10NM60N | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
на замовлення 3577 шт: термін постачання 21-31 дні (днів) |
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STD27N3LH5 | STMicroelectronics |
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на замовлення 1638 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STB7N52K3 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB12NM50ND | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB200N6F3 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB95N3LLH6 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2STN2550 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V Supplier Device Package: SOT-223 Part Status: Obsolete Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.6 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB12NM50ND | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD27N3LH5 | STMicroelectronics |
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на замовлення 1638 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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2STF2550 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.4 W |
на замовлення 11684 шт: термін постачання 21-31 дні (днів) |
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STD12NM50ND | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD10NM60N | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STB50N25M5 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB7N52K3 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
на замовлення 985 шт: термін постачання 21-31 дні (днів) |
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STB200N6F3 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
на замовлення 292 шт: термін постачання 21-31 дні (днів) |
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2STF2550 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V Supplier Device Package: SOT-89-3 Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1.4 W |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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STD12NM50ND | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STB50N25M5 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD27N3LH5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STICE-SYS001 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM8/128-EV/TS | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM3210E-SK/HIT | STMicroelectronics |
![]() Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), Cable(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32F107 Platform: Hitex Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM8/128-MCKIT | STMicroelectronics |
![]() Packaging: Bulk Function: Motor Controller/Driver Type: Power Management Utilized IC / Part: STM8S2xx Supplied Contents: Board(s), Cable(s), Power Supply, Accessories Primary Attributes: Motors (ACIM, BLDC) Embedded: Yes, MCU, 8-Bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS05DTP03 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD878T4 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 15 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LX1G86CTR | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VND14NV04 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm (Max) Input Type: Non-Inverting Voltage - Load: 36V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 12A Ratio - Input:Output: 1:1 Supplier Device Package: TO-252 (DPAK) Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM8L101-EVAL | STMicroelectronics |
![]() Packaging: Box Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s), LCD Core Processor: STM8 Utilized IC / Part: STM8L101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-IAS003V1 | STMicroelectronics |
![]() Packaging: Box Function: LCD Controller Type: Display Contents: Board(s) Utilized IC / Part: STM8L101 Supplied Contents: Board(s) Embedded: Yes, MCU, 8-Bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STM8S-DISCOVERY | STMicroelectronics |
![]() Packaging: Bulk Mounting Type: Fixed Type: MCU 8-Bit Contents: Board(s) Core Processor: STM8 Board Type: Evaluation Platform Utilized IC / Part: STM8S105 Platform: Discovery Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS10DN3LH5 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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STS10N3LH5 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD40N2LH5 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STS10DN3LH5 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
на замовлення 10305 шт: термін постачання 21-31 дні (днів) |
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STGD10NC60SDT4 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 60µJ (on), 340µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 18 nC Part Status: Obsolete Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STD5N52U | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V |
на замовлення 7286 шт: термін постачання 21-31 дні (днів) |
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STS10N3LH5 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V |
на замовлення 5449 шт: термін постачання 21-31 дні (днів) |
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STD5N52U | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STGD10NC60ST4 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 60µJ (on), 340µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 18 nC Part Status: Obsolete Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 60 W |
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STD7N52K3 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||||
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STGD10NC60SDT4 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 19ns/160ns Switching Energy: 60µJ (on), 340µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 18 nC Part Status: Obsolete Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 25 A Power - Max: 60 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS1L60MF | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-222AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO222-AA Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
на замовлення 65631 шт: термін постачання 21-31 дні (днів) |
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STPS1L60MF | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-222AA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO222-AA Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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STD7N52K3 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS1545FP | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-2 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: TO-220FPAC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 45 V |
на замовлення 10019 шт: термін постачання 21-31 дні (днів) |
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STEVAL-TLL006V1 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-SPMD250V2 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-ISB009V1 | STMicroelectronics |
![]() Packaging: Box Function: Battery Monitor Type: Power Management Utilized IC / Part: STC3100 Supplied Contents: Board(s) Primary Attributes: Monitors Current, Voltage, Temperature Embedded: No Part Status: Obsolete Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-MKI038V1 | STMicroelectronics |
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на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-MKI062V1 | STMicroelectronics |
![]() Packaging: Box Sensitivity: Multiple Interface: USB Voltage - Supply: 5V, USB Sensor Type: Accelerometer, Gyroscope, Magnetometer, Pressure, Temperature Utilized IC / Part: STM32F103, HMC5843, LIS331, LPR530, LPS001, LPY530, STLM75 Supplied Contents: Board(s) Embedded: Yes, MCU, 32-Bit Sensing Range: ±2g,4g,8g; 300 ~ 1100mbar; 300°/sec; -55 ~125°C Part Status: Obsolete |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ICB003V1 | STMicroelectronics |
![]() Packaging: Box Interface: I2C, Serial Contents: Board(s) Voltage - Supply: 9V Sensor Type: Touch, Capacitive Utilized IC / Part: STMPE1208S, STM8S207K6 Supplied Contents: Board(s) Embedded: Yes, MCU, 8-Bit Sensing Range: 8 Buttons/Keys Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-MKI047V1 | STMicroelectronics |
![]() Packaging: Box Sensitivity: 2mV/°/s Interface: Analog Sensor Type: Gyroscope, 2 Axis Utilized IC / Part: LPY550AL Supplied Contents: Board(s) Embedded: No Sensing Range: ±500°/sec Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-SPMD150V2 | STMicroelectronics |
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на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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STEVAL-ILL021V1 | STMicroelectronics |
![]() Features: Dimmable Packaging: Box Voltage - Output: 36V Voltage - Input: 4.5V ~ 36V Current - Output / Channel: 85mA Utilized IC / Part: LED7707 Supplied Contents: Board(s) Outputs and Type: 6, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STEVAL-ILL020V1 | STMicroelectronics |
![]() Features: Dimmable Packaging: Box Voltage - Output: 36V Voltage - Input: 4.5V ~ 36V Current - Output / Channel: 30mA Utilized IC / Part: LED7706 Supplied Contents: Board(s) Outputs and Type: 6, Non-Isolated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VIPER15HDTR | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Frequency - Switching: 225kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V Supplier Device Package: 16-SO Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 14 V Part Status: Obsolete Power (Watts): 10 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSV632AILT | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-8 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 125°C Current - Supply: 50µA (x2 Channels) Slew Rate: 0.34V/µs Gain Bandwidth Product: 880 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 800 µV Supplier Device Package: SOT-23-8 Grade: Automotive Number of Circuits: 2 Current - Output / Channel: 74 mA Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 5.5 V Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STMPS2262MTR | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 105mOhm Input Type: Non-Inverting Voltage - Load: 2.7V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Ratio - Input:Output: 1:2 Supplier Device Package: 8-SOIC Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO Part Status: Obsolete |
на замовлення 1278 шт: термін постачання 21-31 дні (днів) |
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T1610-800G-TR |
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Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 2172 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 154.02 грн |
10+ | 94.87 грн |
100+ | 64.13 грн |
500+ | 47.84 грн |
STK22N6F3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 22A POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: PolarPak®
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
Power Dissipation (Max): 5.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PolarPak®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 60V 22A POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: PolarPak®
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
Power Dissipation (Max): 5.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PolarPak®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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STD10NM60N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 3577 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 147.66 грн |
10+ | 117.96 грн |
100+ | 109.66 грн |
STD27N3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
Description: MOSFET N-CH 30V 27A DPAK
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
STB7N52K3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
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STB12NM50ND |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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В кошику
од. на суму грн.
STB200N6F3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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STB95N3LLH6 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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2STN2550 |
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Виробник: STMicroelectronics
Description: TRANS PNP 50V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
Description: TRANS PNP 50V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
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STB12NM50ND |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STD27N3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
Description: MOSFET N-CH 30V 27A DPAK
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
2STF2550 |
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Виробник: STMicroelectronics
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
на замовлення 11684 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.54 грн |
10+ | 35.63 грн |
100+ | 23.01 грн |
500+ | 16.48 грн |
1000+ | 14.83 грн |
STD12NM50ND |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STD10NM60N |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 93.04 грн |
STB50N25M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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STB7N52K3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 123.05 грн |
10+ | 100.76 грн |
100+ | 84.53 грн |
500+ | 70.03 грн |
STB200N6F3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 437.43 грн |
10+ | 378.27 грн |
100+ | 309.92 грн |
2STF2550 |
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Виробник: STMicroelectronics
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.44 грн |
5000+ | 12.73 грн |
7500+ | 12.13 грн |
STD12NM50ND |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STB50N25M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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STD27N3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
Description: MOSFET N-CH 30V 27A DPAK
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STICE-SYS001 |
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Виробник: STMicroelectronics
Description: EMULATOR FOR STM8
Description: EMULATOR FOR STM8
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STM8/128-EV/TS |
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Виробник: STMicroelectronics
Description: EVAL KIT TOUCH SENSING STM8S
Description: EVAL KIT TOUCH SENSING STM8S
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STM3210E-SK/HIT |
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Виробник: STMicroelectronics
Description: HITEX STM32F107 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32F107
Platform: Hitex
Part Status: Obsolete
Description: HITEX STM32F107 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32F107
Platform: Hitex
Part Status: Obsolete
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STM8/128-MCKIT |
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Виробник: STMicroelectronics
Description: EVAL KIT MOTOR CONTROL STM8S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: STM8S2xx
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Primary Attributes: Motors (ACIM, BLDC)
Embedded: Yes, MCU, 8-Bit
Description: EVAL KIT MOTOR CONTROL STM8S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: STM8S2xx
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Primary Attributes: Motors (ACIM, BLDC)
Embedded: Yes, MCU, 8-Bit
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STS05DTP03 |
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Виробник: STMicroelectronics
Description: TRANS NPN/PNP 30V 5A 8SO
Description: TRANS NPN/PNP 30V 5A 8SO
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STD878T4 |
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Виробник: STMicroelectronics
Description: TRANS NPN 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
Description: TRANS NPN 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
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74LX1G86CTR |
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Виробник: STMicroelectronics
Description: IC GATE XOR 1CH 2-INP SOT323-5
Description: IC GATE XOR 1CH 2-INP SOT323-5
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VND14NV04 |
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Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STM8L101-EVAL |
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Виробник: STMicroelectronics
Description: STM8L101 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Utilized IC / Part: STM8L101
Description: STM8L101 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Utilized IC / Part: STM8L101
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STEVAL-IAS003V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR STM8L101
Packaging: Box
Function: LCD Controller
Type: Display
Contents: Board(s)
Utilized IC / Part: STM8L101
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Description: EVAL BOARD FOR STM8L101
Packaging: Box
Function: LCD Controller
Type: Display
Contents: Board(s)
Utilized IC / Part: STM8L101
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
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STM8S-DISCOVERY |
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Виробник: STMicroelectronics
Description: DISCOVERY STM8S105 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8S105
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM8S105 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8S105
Platform: Discovery
Part Status: Active
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STS10DN3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 35.80 грн |
STS10N3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 31.34 грн |
STD40N2LH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
Description: MOSFET N-CH 25V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
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STS10DN3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 10305 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 140.52 грн |
10+ | 86.08 грн |
100+ | 57.89 грн |
500+ | 43.00 грн |
1000+ | 39.35 грн |
STGD10NC60SDT4 |
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Виробник: STMicroelectronics
Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
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STD5N52U |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
на замовлення 7286 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 87.33 грн |
10+ | 68.35 грн |
100+ | 47.83 грн |
500+ | 37.86 грн |
1000+ | 35.66 грн |
STS10N3LH5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
на замовлення 5449 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 94.47 грн |
10+ | 61.46 грн |
100+ | 46.53 грн |
500+ | 35.65 грн |
1000+ | 31.23 грн |
STD5N52U |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 33.91 грн |
5000+ | 31.65 грн |
STGD10NC60ST4 |
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Виробник: STMicroelectronics
Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
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STD7N52K3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
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STGD10NC60SDT4 |
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Виробник: STMicroelectronics
Description: IGBT 600V 18A 60W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
Description: IGBT 600V 18A 60W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
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STPS1L60MF |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 65631 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.17 грн |
15+ | 20.95 грн |
100+ | 10.59 грн |
500+ | 8.80 грн |
1000+ | 6.85 грн |
2000+ | 6.13 грн |
5000+ | 5.90 грн |
STPS1L60MF |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12000+ | 5.88 грн |
24000+ | 5.59 грн |
STD7N52K3 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
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STPS1545FP |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 15A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Description: DIODE SCHOTTKY 45V 15A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 10019 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 78.60 грн |
50+ | 39.81 грн |
100+ | 39.78 грн |
500+ | 37.14 грн |
STEVAL-TLL006V1 |
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Виробник: STMicroelectronics
Description: BOARD EVAL LED DRIVER STCF06
Description: BOARD EVAL LED DRIVER STCF06
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STEVAL-SPMD250V2 |
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Виробник: STMicroelectronics
Description: BOARD EVAL SPMD250
Description: BOARD EVAL SPMD250
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STEVAL-ISB009V1 |
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Виробник: STMicroelectronics
Description: EVAL BOARD FOR STC3100
Packaging: Box
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: STC3100
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage, Temperature
Embedded: No
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR STC3100
Packaging: Box
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: STC3100
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage, Temperature
Embedded: No
Part Status: Obsolete
Contents: Board(s)
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STEVAL-MKI038V1 |
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Виробник: STMicroelectronics
Description: BOARD EVALUATION FOR LPR550AL
Description: BOARD EVALUATION FOR LPR550AL
на замовлення 4 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
STEVAL-MKI062V1 |
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Виробник: STMicroelectronics
Description: BOARD EVAL ACCELEROMETER
Packaging: Box
Sensitivity: Multiple
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Pressure, Temperature
Utilized IC / Part: STM32F103, HMC5843, LIS331, LPR530, LPS001, LPY530, STLM75
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±2g,4g,8g; 300 ~ 1100mbar; 300°/sec; -55 ~125°C
Part Status: Obsolete
Description: BOARD EVAL ACCELEROMETER
Packaging: Box
Sensitivity: Multiple
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Pressure, Temperature
Utilized IC / Part: STM32F103, HMC5843, LIS331, LPR530, LPS001, LPY530, STLM75
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±2g,4g,8g; 300 ~ 1100mbar; 300°/sec; -55 ~125°C
Part Status: Obsolete
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 21047.67 грн |
STEVAL-ICB003V1 |
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Виробник: STMicroelectronics
Description: BOARD EVAL CAP SENSOR STMPE1208S
Packaging: Box
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 9V
Sensor Type: Touch, Capacitive
Utilized IC / Part: STMPE1208S, STM8S207K6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Sensing Range: 8 Buttons/Keys
Part Status: Obsolete
Description: BOARD EVAL CAP SENSOR STMPE1208S
Packaging: Box
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 9V
Sensor Type: Touch, Capacitive
Utilized IC / Part: STMPE1208S, STM8S207K6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Sensing Range: 8 Buttons/Keys
Part Status: Obsolete
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STEVAL-MKI047V1 |
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Виробник: STMicroelectronics
Description: BOARD EVALUATION FOR LPR550AL
Packaging: Box
Sensitivity: 2mV/°/s
Interface: Analog
Sensor Type: Gyroscope, 2 Axis
Utilized IC / Part: LPY550AL
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±500°/sec
Part Status: Obsolete
Description: BOARD EVALUATION FOR LPR550AL
Packaging: Box
Sensitivity: 2mV/°/s
Interface: Analog
Sensor Type: Gyroscope, 2 Axis
Utilized IC / Part: LPY550AL
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±500°/sec
Part Status: Obsolete
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STEVAL-SPMD150V2 |
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Виробник: STMicroelectronics
Description: BOARD EVAL SPMD150
Description: BOARD EVAL SPMD150
на замовлення 2 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 5012.63 грн |
STEVAL-ILL021V1 |
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Виробник: STMicroelectronics
Description: BOARD EVAL LCD BACKLIGHT LED7707
Features: Dimmable
Packaging: Box
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 85mA
Utilized IC / Part: LED7707
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
Description: BOARD EVAL LCD BACKLIGHT LED7707
Features: Dimmable
Packaging: Box
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 85mA
Utilized IC / Part: LED7707
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
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STEVAL-ILL020V1 |
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Виробник: STMicroelectronics
Description: BOARD EVAL LCD BACKLIGHT LED7706
Features: Dimmable
Packaging: Box
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 30mA
Utilized IC / Part: LED7706
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
Description: BOARD EVAL LCD BACKLIGHT LED7706
Features: Dimmable
Packaging: Box
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 30mA
Utilized IC / Part: LED7706
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
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VIPER15HDTR |
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Виробник: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 225kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14 V
Part Status: Obsolete
Power (Watts): 10 W
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 225kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 14 V
Part Status: Obsolete
Power (Watts): 10 W
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од. на суму грн.
TSV632AILT |
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Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT SOT23-8
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-8
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 50µA (x2 Channels)
Slew Rate: 0.34V/µs
Gain Bandwidth Product: 880 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-8
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
Description: IC OPAMP GP 2 CIRCUIT SOT23-8
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-8
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 50µA (x2 Channels)
Slew Rate: 0.34V/µs
Gain Bandwidth Product: 880 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-8
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 74 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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STMPS2262MTR |
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Виробник: STMicroelectronics
Description: IC PWR SWITCH 1:2 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
Description: IC PWR SWITCH 1:2 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 105mOhm
Input Type: Non-Inverting
Voltage - Load: 2.7V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1A
Ratio - Input:Output: 1:2
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
Part Status: Obsolete
на замовлення 1278 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.92 грн |
10+ | 42.28 грн |
25+ | 38.04 грн |
100+ | 31.32 грн |
250+ | 29.23 грн |
500+ | 27.97 грн |
1000+ | 26.50 грн |