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STGW38IH130D STGW38IH130D STMicroelectronics STGW%28T%2938IH130D.pdf Description: IGBT 1300V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
товару немає в наявності
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STP10N62K3 STP10N62K3 STMicroelectronics en.CD00232917.pdf Description: MOSFET N-CH 620V 8.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
товару немає в наявності
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STP10NM60N STP10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 1794 шт:
термін постачання 21-31 дні (днів)
2+270.12 грн
50+131.81 грн
100+119.39 грн
500+91.63 грн
1000+85.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFW4N150 STFW4N150 STMicroelectronics en.CD00050744.pdf Description: MOSFET N-CH 1500V 4A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
1+530.41 грн
30+233.60 грн
120+226.19 грн
В кошику  од. на суму  грн.
STP95N2LH5 STP95N2LH5 STMicroelectronics en.CD00168873.pdf Description: MOSFET N-CH 25V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V
товару немає в наявності
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STS30N3LLH6 STS30N3LLH6 STMicroelectronics Description: MOSFET N-CH 30V 30A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
товару немає в наявності
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T1610-800G-TR T1610-800G-TR STMicroelectronics en.CD00002265.pdf Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+45.09 грн
2000+40.12 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
T1610-800G-TR T1610-800G-TR STMicroelectronics en.CD00002265.pdf Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 2726 шт:
термін постачання 21-31 дні (днів)
3+143.24 грн
10+88.12 грн
100+59.57 грн
500+44.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STK22N6F3 STK22N6F3 STMicroelectronics en.CD00203111.pdf Description: MOSFET N-CH 60V 22A POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: PolarPak®
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
Power Dissipation (Max): 5.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PolarPak®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
товару немає в наявності
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STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
2+270.12 грн
10+170.18 грн
100+119.31 грн
500+99.35 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STD27N3LH5 STD27N3LH5 STMicroelectronics CD00232223.pdf Description: MOSFET N-CH 30V 27A DPAK
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STB7N52K3 STB7N52K3 STMicroelectronics en.CD00204098.pdf Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
товару немає в наявності
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STB12NM50ND STB12NM50ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
товару немає в наявності
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STB200N6F3 STB200N6F3 STMicroelectronics STB,STI,STP200N6F3.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товару немає в наявності
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STB95N3LLH6 STB95N3LLH6 STMicroelectronics en.CD00218754.pdf Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
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2STN2550 2STN2550 STMicroelectronics 2STF2550_2STN2550_Rev1_Nov2008.pdf Description: TRANS PNP 50V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
товару немає в наявності
В кошику  од. на суму  грн.
STD27N3LH5 STD27N3LH5 STMicroelectronics CD00232223.pdf Description: MOSFET N-CH 30V 27A DPAK
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
2STF2550 2STF2550 STMicroelectronics en.CD00216758.pdf Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
на замовлення 4144 шт:
термін постачання 21-31 дні (днів)
7+52.39 грн
11+31.37 грн
100+20.23 грн
500+14.46 грн
1000+13.00 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STD12NM50ND STD12NM50ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
товару немає в наявності
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STD10NM60N STD10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STB50N25M5 STB50N25M5 STMicroelectronics STB50N25M5.pdf Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STB7N52K3 STB7N52K3 STMicroelectronics en.CD00204098.pdf Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
3+126.87 грн
10+103.89 грн
100+87.15 грн
500+72.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STB200N6F3 STB200N6F3 STMicroelectronics STB,STI,STP200N6F3.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
1+451.01 грн
10+390.01 грн
100+319.54 грн
В кошику  од. на суму  грн.
2STF2550 2STF2550 STMicroelectronics en.CD00216758.pdf Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+12.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STB50N25M5 STB50N25M5 STMicroelectronics STB50N25M5.pdf Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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STD27N3LH5 STD27N3LH5 STMicroelectronics CD00232223.pdf Description: MOSFET N-CH 30V 27A DPAK
товару немає в наявності
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STICE-SYS001 STICE-SYS001 STMicroelectronics en.CD00167497.pdf Description: EMULATOR FOR STM8
товару немає в наявності
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STM8/128-EV/TS STM8/128-EV/TS STMicroelectronics en.CD00282478.pdf Description: EVAL KIT TOUCH SENSING STM8S
товару немає в наявності
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STM3210E-SK/HIT STM3210E-SK/HIT STMicroelectronics ST%28M32%2CR91X%2CR7%29-SK%2CHIT.pdf Description: HITEX STM32F107 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32F107
Platform: Hitex
Part Status: Obsolete
товару немає в наявності
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STM8/128-MCKIT STM8/128-MCKIT STMicroelectronics en.CD00287838.pdf Description: EVAL KIT MOTOR CONTROL STM8S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: STM8S2xx
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Primary Attributes: Motors (ACIM, BLDC)
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
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STD878T4 STD878T4 STMicroelectronics en.CD00168970.pdf Description: TRANS NPN 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
товару немає в наявності
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74LX1G86CTR 74LX1G86CTR STMicroelectronics 74LX1G86.pdf Description: IC GATE XOR 1CH 2-INP SOT323-5
товару немає в наявності
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VND14NV04 VND14NV04 STMicroelectronics en.CD00002219.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STM8L101-EVAL STM8L101-EVAL STMicroelectronics en.CD00281105.pdf Description: STM8L101 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Utilized IC / Part: STM8L101
товару немає в наявності
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STEVAL-IAS003V1 STEVAL-IAS003V1 STMicroelectronics STEVAL-IAS003V1.pdf Description: EVAL BOARD FOR STM8L101
Packaging: Box
Function: LCD Controller
Type: Display
Contents: Board(s)
Utilized IC / Part: STM8L101
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
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STM8S-DISCOVERY STM8S-DISCOVERY STMicroelectronics en.CD00282475.pdf Description: DISCOVERY STM8S105 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8S105
Platform: Discovery
Part Status: Active
товару немає в наявності
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STS10DN3LH5 STS10DN3LH5 STMicroelectronics en.CD00232270.pdf Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+36.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STS10N3LH5 STS10N3LH5 STMicroelectronics en.CD00232229.pdf Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+32.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD40N2LH5 STD40N2LH5 STMicroelectronics en.CD00205556.pdf Description: MOSFET N-CH 25V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
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STS10DN3LH5 STS10DN3LH5 STMicroelectronics en.CD00232270.pdf Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 10305 шт:
термін постачання 21-31 дні (днів)
3+144.88 грн
10+88.75 грн
100+59.69 грн
500+44.33 грн
1000+40.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGD10NC60SDT4 STGD10NC60SDT4 STMicroelectronics STG%28D%2CF%2910NC60SD.pdf Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
товару немає в наявності
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STD5N52U STD5N52U STMicroelectronics ST%28D%2CF%295N52U.pdf Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
4+86.76 грн
10+67.71 грн
100+47.49 грн
500+35.81 грн
1000+32.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STS10N3LH5 STS10N3LH5 STMicroelectronics en.CD00232229.pdf Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
на замовлення 5449 шт:
термін постачання 21-31 дні (днів)
4+97.41 грн
10+63.37 грн
100+47.98 грн
500+36.75 грн
1000+32.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STD5N52U STD5N52U STMicroelectronics ST%28D%2CF%295N52U.pdf Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
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STGD10NC60ST4 STGD10NC60ST4 STMicroelectronics STG%28D%2CP%2910NC60S.pdf Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
товару немає в наявності
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STGD10NC60SDT4 STGD10NC60SDT4 STMicroelectronics STG%28D%2CF%2910NC60SD.pdf Description: IGBT 600V 18A 60W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
товару немає в наявності
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STPS1L60MF STPS1L60MF STMicroelectronics en.CD00002285.pdf Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 65631 шт:
термін постачання 21-31 дні (днів)
11+31.10 грн
15+21.60 грн
100+10.92 грн
500+9.08 грн
1000+7.06 грн
2000+6.32 грн
5000+6.08 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
STPS1L60MF STPS1L60MF STMicroelectronics en.CD00002285.pdf Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
12000+6.06 грн
24000+5.76 грн
Мінімальне замовлення: 12000
В кошику  од. на суму  грн.
STD7N52K3 STD7N52K3 STMicroelectronics en.CD00204098.pdf Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
товару немає в наявності
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STPS1545FP STPS1545FP STMicroelectronics en.CD00000819.pdf Description: DIODE SCHOTTKY 45V 15A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 9606 шт:
термін постачання 21-31 дні (днів)
5+77.76 грн
50+37.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STEVAL-TLL006V1 STEVAL-TLL006V1 STMicroelectronics STEVAL-TLL006V1.pdf Description: BOARD EVAL LED DRIVER STCF06
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-SPMD250V2 STEVAL-SPMD250V2 STMicroelectronics CD00292221.pdf Description: BOARD EVAL SPMD250
товару немає в наявності
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STEVAL-ISB009V1 STEVAL-ISB009V1 STMicroelectronics en.CD00288883.pdf Description: EVAL BOARD FOR STC3100
Packaging: Box
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: STC3100
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage, Temperature
Embedded: No
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-MKI038V1 STEVAL-MKI038V1 STMicroelectronics CD00261590.pdf Description: BOARD EVALUATION FOR LPR550AL
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
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STEVAL-MKI062V1 STEVAL-MKI062V1 STMicroelectronics STEVAL-MKI062V1.pdf Description: BOARD EVAL ACCELEROMETER
Packaging: Box
Sensitivity: Multiple
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Pressure, Temperature
Utilized IC / Part: STM32F103, HMC5843, LIS331, LPR530, LPS001, LPY530, STLM75
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±2g,4g,8g; 300 ~ 1100mbar; 300°/sec; -55 ~125°C
Part Status: Obsolete
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+21700.99 грн
В кошику  од. на суму  грн.
STEVAL-ICB003V1 STEVAL-ICB003V1 STMicroelectronics STEVAL-ICB003V1.pdf Description: BOARD EVAL CAP SENSOR STMPE1208S
Packaging: Box
Interface: I2C, Serial
Voltage - Supply: 9V
Sensor Type: Touch, Capacitive
Utilized IC / Part: STMPE1208S, STM8S207K6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Sensing Range: 8 Buttons/Keys
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
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STEVAL-MKI047V1 STEVAL-MKI047V1 STMicroelectronics en.CD00262445.pdf Description: BOARD EVALUATION FOR LPR550AL
Packaging: Box
Sensitivity: 2mV/°/s
Interface: Analog
Sensor Type: Gyroscope, 2 Axis
Utilized IC / Part: LPY550AL
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±500°/sec
Part Status: Obsolete
товару немає в наявності
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STEVAL-SPMD150V2 STEVAL-SPMD150V2 STMicroelectronics en.CD00292209.pdf Description: BOARD EVAL SPMD150
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+5168.23 грн
В кошику  од. на суму  грн.
STEVAL-ILL021V1 STEVAL-ILL021V1 STMicroelectronics en.CD00233789.pdf Description: BOARD EVAL LCD BACKLIGHT LED7707
Packaging: Box
Features: Dimmable
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 85mA
Utilized IC / Part: LED7707
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
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STEVAL-ILL020V1 STEVAL-ILL020V1 STMicroelectronics en.CD00233784.pdf Description: BOARD EVAL LCD BACKLIGHT LED7706
Packaging: Box
Features: Dimmable
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 30mA
Utilized IC / Part: LED7706
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
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STGW38IH130D STGW%28T%2938IH130D.pdf
STGW38IH130D
Виробник: STMicroelectronics
Description: IGBT 1300V 63A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
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STP10N62K3 en.CD00232917.pdf
STP10N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 8.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
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STP10NM60N std10nm60n.pdf
STP10NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 1794 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.12 грн
50+131.81 грн
100+119.39 грн
500+91.63 грн
1000+85.08 грн
Мінімальне замовлення: 2
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STFW4N150 en.CD00050744.pdf
STFW4N150
Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 4A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+530.41 грн
30+233.60 грн
120+226.19 грн
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STP95N2LH5 en.CD00168873.pdf
STP95N2LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 40A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1817 pF @ 25 V
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STS30N3LLH6
STS30N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 30A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
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T1610-800G-TR en.CD00002265.pdf
T1610-800G-TR
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+45.09 грн
2000+40.12 грн
Мінімальне замовлення: 1000
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T1610-800G-TR en.CD00002265.pdf
T1610-800G-TR
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 160A, 168A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
на замовлення 2726 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+143.24 грн
10+88.12 грн
100+59.57 грн
500+44.44 грн
Мінімальне замовлення: 3
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STK22N6F3 en.CD00203111.pdf
STK22N6F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 22A POLARPAK
Packaging: Tape & Reel (TR)
Package / Case: PolarPak®
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 11A, 10V
Power Dissipation (Max): 5.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PolarPak®
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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STD10NM60N std10nm60n.pdf
STD10NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
на замовлення 870 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+270.12 грн
10+170.18 грн
100+119.31 грн
500+99.35 грн
Мінімальне замовлення: 2
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STD27N3LH5 CD00232223.pdf
STD27N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)
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STB7N52K3 en.CD00204098.pdf
STB7N52K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
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STB12NM50ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STB12NM50ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STB200N6F3 STB,STI,STP200N6F3.pdf
STB200N6F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
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STB95N3LLH6 en.CD00218754.pdf
STB95N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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2STN2550 2STF2550_2STN2550_Rev1_Nov2008.pdf
2STN2550
Виробник: STMicroelectronics
Description: TRANS PNP 50V 5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-223
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.6 W
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STD27N3LH5 CD00232223.pdf
STD27N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
на замовлення 1638 шт:
термін постачання 21-31 дні (днів)
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2STF2550 en.CD00216758.pdf
2STF2550
Виробник: STMicroelectronics
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
на замовлення 4144 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+52.39 грн
11+31.37 грн
100+20.23 грн
500+14.46 грн
1000+13.00 грн
Мінімальне замовлення: 7
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STD12NM50ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STD12NM50ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STD10NM60N std10nm60n.pdf
STD10NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
товару немає в наявності
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STB50N25M5 STB50N25M5.pdf
STB50N25M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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STB7N52K3 en.CD00204098.pdf
STB7N52K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
на замовлення 985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.87 грн
10+103.89 грн
100+87.15 грн
500+72.20 грн
Мінімальне замовлення: 3
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STB200N6F3 STB,STI,STP200N6F3.pdf
STB200N6F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+451.01 грн
10+390.01 грн
100+319.54 грн
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2STF2550 en.CD00216758.pdf
2STF2550
Виробник: STMicroelectronics
Description: TRANS PNP 50V 5A SOT-89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2A, 2V
Supplier Device Package: SOT-89-3
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.4 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+12.63 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STB50N25M5 STB50N25M5.pdf
STB50N25M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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STD27N3LH5 CD00232223.pdf
STD27N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 27A DPAK
товару немає в наявності
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STICE-SYS001 en.CD00167497.pdf
STICE-SYS001
Виробник: STMicroelectronics
Description: EMULATOR FOR STM8
товару немає в наявності
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STM8/128-EV/TS en.CD00282478.pdf
STM8/128-EV/TS
Виробник: STMicroelectronics
Description: EVAL KIT TOUCH SENSING STM8S
товару немає в наявності
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STM3210E-SK/HIT ST%28M32%2CR91X%2CR7%29-SK%2CHIT.pdf
STM3210E-SK/HIT
Виробник: STMicroelectronics
Description: HITEX STM32F107 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32F107
Platform: Hitex
Part Status: Obsolete
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STM8/128-MCKIT en.CD00287838.pdf
STM8/128-MCKIT
Виробник: STMicroelectronics
Description: EVAL KIT MOTOR CONTROL STM8S
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Utilized IC / Part: STM8S2xx
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Primary Attributes: Motors (ACIM, BLDC)
Embedded: Yes, MCU, 8-Bit
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STD878T4 en.CD00168970.pdf
STD878T4
Виробник: STMicroelectronics
Description: TRANS NPN 30V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 50mA, 2A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 15 W
товару немає в наявності
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74LX1G86CTR 74LX1G86.pdf
74LX1G86CTR
Виробник: STMicroelectronics
Description: IC GATE XOR 1CH 2-INP SOT323-5
товару немає в наявності
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VND14NV04 en.CD00002219.pdf
VND14NV04
Виробник: STMicroelectronics
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 36V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 12A
Ratio - Input:Output: 1:1
Supplier Device Package: TO-252 (DPAK)
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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STM8L101-EVAL en.CD00281105.pdf
STM8L101-EVAL
Виробник: STMicroelectronics
Description: STM8L101 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), LCD
Core Processor: STM8
Utilized IC / Part: STM8L101
товару немає в наявності
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STEVAL-IAS003V1 STEVAL-IAS003V1.pdf
STEVAL-IAS003V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STM8L101
Packaging: Box
Function: LCD Controller
Type: Display
Contents: Board(s)
Utilized IC / Part: STM8L101
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
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STM8S-DISCOVERY en.CD00282475.pdf
STM8S-DISCOVERY
Виробник: STMicroelectronics
Description: DISCOVERY STM8S105 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s)
Core Processor: STM8
Board Type: Evaluation Platform
Utilized IC / Part: STM8S105
Platform: Discovery
Part Status: Active
товару немає в наявності
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STS10DN3LH5 en.CD00232270.pdf
STS10DN3LH5
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+36.91 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STS10N3LH5 en.CD00232229.pdf
STS10N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+32.32 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD40N2LH5 en.CD00205556.pdf
STD40N2LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 25V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 20A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 20 V
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STS10DN3LH5 en.CD00232270.pdf
STS10DN3LH5
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 10A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
на замовлення 10305 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.88 грн
10+88.75 грн
100+59.69 грн
500+44.33 грн
1000+40.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGD10NC60SDT4 STG%28D%2CF%2910NC60SD.pdf
STGD10NC60SDT4
Виробник: STMicroelectronics
Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
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STD5N52U ST%28D%2CF%295N52U.pdf
STD5N52U
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
на замовлення 2485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.76 грн
10+67.71 грн
100+47.49 грн
500+35.81 грн
1000+32.72 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STS10N3LH5 en.CD00232229.pdf
STS10N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
на замовлення 5449 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.41 грн
10+63.37 грн
100+47.98 грн
500+36.75 грн
1000+32.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STD5N52U ST%28D%2CF%295N52U.pdf
STD5N52U
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 4.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
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STGD10NC60ST4 STG%28D%2CP%2910NC60S.pdf
STGD10NC60ST4
Виробник: STMicroelectronics
Description: IGBT 600V 18A 60W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
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STGD10NC60SDT4 STG%28D%2CF%2910NC60SD.pdf
STGD10NC60SDT4
Виробник: STMicroelectronics
Description: IGBT 600V 18A 60W DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 19ns/160ns
Switching Energy: 60µJ (on), 340µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 18 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 60 W
товару немає в наявності
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STPS1L60MF en.CD00002285.pdf
STPS1L60MF
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Cut Tape (CT)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 65631 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.10 грн
15+21.60 грн
100+10.92 грн
500+9.08 грн
1000+7.06 грн
2000+6.32 грн
5000+6.08 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
STPS1L60MF en.CD00002285.pdf
STPS1L60MF
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 1A DO222-AA
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO222-AA
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 60 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12000+6.06 грн
24000+5.76 грн
Мінімальне замовлення: 12000
В кошику  од. на суму  грн.
STD7N52K3 en.CD00204098.pdf
STD7N52K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V
товару немає в наявності
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STPS1545FP en.CD00000819.pdf
STPS1545FP
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 15A TO220FPAC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
на замовлення 9606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+77.76 грн
50+37.93 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STEVAL-TLL006V1 STEVAL-TLL006V1.pdf
STEVAL-TLL006V1
Виробник: STMicroelectronics
Description: BOARD EVAL LED DRIVER STCF06
товару немає в наявності
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STEVAL-SPMD250V2 CD00292221.pdf
STEVAL-SPMD250V2
Виробник: STMicroelectronics
Description: BOARD EVAL SPMD250
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STEVAL-ISB009V1 en.CD00288883.pdf
STEVAL-ISB009V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STC3100
Packaging: Box
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: STC3100
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage, Temperature
Embedded: No
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-MKI038V1 CD00261590.pdf
STEVAL-MKI038V1
Виробник: STMicroelectronics
Description: BOARD EVALUATION FOR LPR550AL
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STEVAL-MKI062V1 STEVAL-MKI062V1.pdf
STEVAL-MKI062V1
Виробник: STMicroelectronics
Description: BOARD EVAL ACCELEROMETER
Packaging: Box
Sensitivity: Multiple
Interface: USB
Voltage - Supply: 5V, USB
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Pressure, Temperature
Utilized IC / Part: STM32F103, HMC5843, LIS331, LPR530, LPS001, LPY530, STLM75
Supplied Contents: Board(s)
Embedded: Yes, MCU, 32-Bit
Sensing Range: ±2g,4g,8g; 300 ~ 1100mbar; 300°/sec; -55 ~125°C
Part Status: Obsolete
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21700.99 грн
В кошику  од. на суму  грн.
STEVAL-ICB003V1 STEVAL-ICB003V1.pdf
STEVAL-ICB003V1
Виробник: STMicroelectronics
Description: BOARD EVAL CAP SENSOR STMPE1208S
Packaging: Box
Interface: I2C, Serial
Voltage - Supply: 9V
Sensor Type: Touch, Capacitive
Utilized IC / Part: STMPE1208S, STM8S207K6
Supplied Contents: Board(s)
Embedded: Yes, MCU, 8-Bit
Sensing Range: 8 Buttons/Keys
Part Status: Obsolete
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-MKI047V1 en.CD00262445.pdf
STEVAL-MKI047V1
Виробник: STMicroelectronics
Description: BOARD EVALUATION FOR LPR550AL
Packaging: Box
Sensitivity: 2mV/°/s
Interface: Analog
Sensor Type: Gyroscope, 2 Axis
Utilized IC / Part: LPY550AL
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±500°/sec
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-SPMD150V2 en.CD00292209.pdf
STEVAL-SPMD150V2
Виробник: STMicroelectronics
Description: BOARD EVAL SPMD150
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5168.23 грн
В кошику  од. на суму  грн.
STEVAL-ILL021V1 en.CD00233789.pdf
STEVAL-ILL021V1
Виробник: STMicroelectronics
Description: BOARD EVAL LCD BACKLIGHT LED7707
Packaging: Box
Features: Dimmable
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 85mA
Utilized IC / Part: LED7707
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-ILL020V1 en.CD00233784.pdf
STEVAL-ILL020V1
Виробник: STMicroelectronics
Description: BOARD EVAL LCD BACKLIGHT LED7706
Packaging: Box
Features: Dimmable
Voltage - Output: 36V
Voltage - Input: 4.5V ~ 36V
Current - Output / Channel: 30mA
Utilized IC / Part: LED7706
Supplied Contents: Board(s)
Outputs and Type: 6, Non-Isolated
товару немає в наявності
В кошику  од. на суму  грн.
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