Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (133374) > Сторінка 283 з 2223
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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LM4041CILT-1.2 | STMicroelectronics |
 Description: IC VREF SHUNT 1.225V SOT23-3L |
на замовлення 2934 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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LM4041CILT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 1.225V SOT23-3L |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LM4041DILT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 1% SOT23-3L Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: SOT-23-3 Voltage - Output (Min/Fixed): 1.225V Noise - 10Hz to 10kHz: 60µVrms Part Status: Active Current - Cathode: 50 µA Current - Output: 12 mA |
товару немає в наявності |
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LM4041DICT-1.2 | STMicroelectronics |
Description: IC VREF SHUNT 1% SOT323-5 Tolerance: ±1% Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Temperature Coefficient: 100ppm/°C Output Type: Fixed Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: SOT-323-5 Voltage - Output (Min/Fixed): 1.225V Noise - 10Hz to 10kHz: 60µVrms Current - Cathode: 50 µA Current - Output: 12 mA |
товару немає в наявності |
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M41T62LC6F | STMicroelectronics |
Description: IC RTC CLK/CALENDAR I2C 8LCC Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer Packaging: Cut Tape (CT) Package / Case: 8-LCC Mounting Type: Surface Mount Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.3V ~ 4.4V Time Format: HH:MM:SS:hh (24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-LCC (1.5x3.2) Current - Timekeeping (Max): 0.7µA ~ 0.95µA @ 1.3V ~ 4.4V Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PM8803TR | STMicroelectronics |
Description: IC POE CNTRL 1 CHANNEL 20HTSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Type: Controller (PD), DC/DC Operating Temperature: -40°C ~ 85°C Internal Switch(s): Both Standards: 802.3at (PoE+), 802.3af (PoE) Supplier Device Package: 20-HTSSOP Auxiliary Sense: No Part Status: Active Number of Channels: 1 Power - Max: 25.5 W |
на замовлення 2004 шт: термін постачання 21-31 дні (днів) |
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STEF05PUR | STMicroelectronics |
Description: IC ELECTRONIC FUSE 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 3.1V ~ 10V Current - Output: 3.6A Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 10-DFN (3x3) |
на замовлення 12830 шт: термін постачання 21-31 дні (днів) |
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STEF12PUR | STMicroelectronics |
Description: IC ELECTRONIC FUSE 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Mounting Type: Surface Mount Function: Electronic Fuse Voltage - Input: 7.6V ~ 18V Current - Output: 3.6A Operating Temperature: -40°C ~ 125°C (TJ) Supplier Device Package: 10-DFN (3x3) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TS391RILT | STMicroelectronics |
Description: IC COMPARATOR 1CH SOT-23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: CMOS, DTL, ECL, MOS, TTL Mounting Type: Surface Mount Number of Elements: 1 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: SOT-23-5 Current - Quiescent (Max): 1.25mA Voltage - Input Offset (Max): 5mV @ 30V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Grade: Automotive Part Status: Active Qualification: AEC-Q100 |
на замовлення 3638 шт: термін постачання 21-31 дні (днів) |
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| CPL-WB-00D3 | STMicroelectronics |
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, FCBGA Frequency: 824MHz ~ 2.17GHz Insertion Loss: 0.1dB Applications: GSM, W-CDMA, WiMax Coupling Factor: 34dB Coupler Type: Standard Return Loss: 15dB Supplier Device Package: 6-FlipChip Part Status: Obsolete |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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DCPL-WB-00D3 | STMicroelectronics |
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP Packaging: Tape & Reel (TR) Package / Case: 8-UFBGA, FCBGA Frequency: 824MHz ~ 2.17GHz Insertion Loss: 0.2dB Applications: W-CDMA Coupling Factor: 37dB Coupler Type: Dual Band, Dual Path Return Loss: 15dB Supplier Device Package: 8-FlipChip Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LCDP1521SRL | STMicroelectronics |
Description: THYRISTOR 60A 8SOIC Packaging: Tape & Reel (TR) Capacitance: 35pF Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 2 Supplier Device Package: 8-SOIC Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 25 A Current - Peak Pulse (8/20µs): 60 A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STD155N3H6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STD155N3LH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STH250N55F3-6 | STMicroelectronics |
Description: MOSFET N-CH 55V 180A H2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS10M80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS10SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS15M80CG-TR | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V D2PAK |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS20SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS30M80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS30SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS40SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TN1205H-6G-TR | STMicroelectronics |
Description: SCR 600V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Current - On State (It (AV)) (Max): 7.6 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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MD2009DFP | STMicroelectronics |
Description: TRANS NPN 700V 10A TO-220 FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V Supplier Device Package: TO-220 Full Pack Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 700 V Power - Max: 40 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STB155N3H6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STF18N55M5 | STMicroelectronics |
Description: MOSFET N-CH 550V 16A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STFW60N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 46A ISOWATT Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI12N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 8.5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI21N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 17A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STI260N6F6 | STMicroelectronics |
Description: MOSFET N-CH 75V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI30N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 22A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI32N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 24A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STI35N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 27A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STI8N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 7A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STP210N75F6 | STMicroelectronics |
Description: MOSFET N-CH 75V 120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STP34NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 29A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
на замовлення 620 шт: термін постачання 21-31 дні (днів) |
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STP75N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 75A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
 |
STP7NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS10M80CFP | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220AB Full-Pak Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS10M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS10M80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS10SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOT 80V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS10SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS10SM80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15M80CFP | STMicroelectronics |
Description: DIODE ARR SCHOT 80V 7.5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15M80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 7.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220FP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS15SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS15SM80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 7.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 7.5A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A Current - Reverse Leakage @ Vr: 20 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS20SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Full-Pak Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS20SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS20SM80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Current - Reverse Leakage @ Vr: 25 µA @ 80 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS30M80CFP | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220AB Full-Pak Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 80 V |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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STPS30M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS30M80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STPS30SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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STPS30SM80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 15A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A Current - Reverse Leakage @ Vr: 40 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| LM4041CILT-1.2 |
|
Виробник: STMicroelectronics
Description: IC VREF SHUNT 1.225V SOT23-3L
Description: IC VREF SHUNT 1.225V SOT23-3L
на замовлення 2934 шт:
термін постачання 21-31 дні (днів)
| LM4041CILT-1.2 |
|
Виробник: STMicroelectronics
Description: IC VREF SHUNT 1.225V SOT23-3L
Description: IC VREF SHUNT 1.225V SOT23-3L
товару немає в наявності
В кошику
од. на суму грн.
| LM4041DILT-1.2 |
|
Виробник: STMicroelectronics
Description: IC VREF SHUNT 1% SOT23-3L
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Part Status: Active
Current - Cathode: 50 µA
Current - Output: 12 mA
Description: IC VREF SHUNT 1% SOT23-3L
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-23-3
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Part Status: Active
Current - Cathode: 50 µA
Current - Output: 12 mA
товару немає в наявності
В кошику
од. на суму грн.
| LM4041DICT-1.2 |
|
Виробник: STMicroelectronics
Description: IC VREF SHUNT 1% SOT323-5
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 50 µA
Current - Output: 12 mA
Description: IC VREF SHUNT 1% SOT323-5
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Temperature Coefficient: 100ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: SOT-323-5
Voltage - Output (Min/Fixed): 1.225V
Noise - 10Hz to 10kHz: 60µVrms
Current - Cathode: 50 µA
Current - Output: 12 mA
товару немає в наявності
В кошику
од. на суму грн.
| M41T62LC6F |
|
Виробник: STMicroelectronics
Description: IC RTC CLK/CALENDAR I2C 8LCC
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Packaging: Cut Tape (CT)
Package / Case: 8-LCC
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.3V ~ 4.4V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-LCC (1.5x3.2)
Current - Timekeeping (Max): 0.7µA ~ 0.95µA @ 1.3V ~ 4.4V
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8LCC
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Packaging: Cut Tape (CT)
Package / Case: 8-LCC
Mounting Type: Surface Mount
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.3V ~ 4.4V
Time Format: HH:MM:SS:hh (24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-LCC (1.5x3.2)
Current - Timekeeping (Max): 0.7µA ~ 0.95µA @ 1.3V ~ 4.4V
Part Status: Obsolete
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| PM8803TR |
|
Виробник: STMicroelectronics
Description: IC POE CNTRL 1 CHANNEL 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 85°C
Internal Switch(s): Both
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 20-HTSSOP
Auxiliary Sense: No
Part Status: Active
Number of Channels: 1
Power - Max: 25.5 W
Description: IC POE CNTRL 1 CHANNEL 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: Controller (PD), DC/DC
Operating Temperature: -40°C ~ 85°C
Internal Switch(s): Both
Standards: 802.3at (PoE+), 802.3af (PoE)
Supplier Device Package: 20-HTSSOP
Auxiliary Sense: No
Part Status: Active
Number of Channels: 1
Power - Max: 25.5 W
на замовлення 2004 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.59 грн |
| 10+ | 159.32 грн |
| 25+ | 145.92 грн |
| 100+ | 123.18 грн |
| 250+ | 116.63 грн |
| 500+ | 114.80 грн |
| STEF05PUR |
|
Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 10V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 3.1V ~ 10V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
на замовлення 12830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.35 грн |
| 10+ | 54.79 грн |
| 25+ | 49.45 грн |
| 100+ | 40.91 грн |
| 250+ | 38.29 грн |
| 500+ | 36.71 грн |
| 1000+ | 34.83 грн |
| STEF12PUR |
|
Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 7.6V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Description: IC ELECTRONIC FUSE 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 7.6V ~ 18V
Current - Output: 3.6A
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.76 грн |
| 10+ | 54.33 грн |
| 25+ | 49.03 грн |
| 100+ | 40.57 грн |
| 250+ | 37.97 грн |
| 500+ | 36.40 грн |
| 1000+ | 34.87 грн |
| TS391RILT |
|
Виробник: STMicroelectronics
Description: IC COMPARATOR 1CH SOT-23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, ECL, MOS, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 30V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Description: IC COMPARATOR 1CH SOT-23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, ECL, MOS, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 30V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 3638 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.20 грн |
| 10+ | 33.85 грн |
| 25+ | 30.38 грн |
| 100+ | 24.95 грн |
| 250+ | 23.26 грн |
| 500+ | 22.23 грн |
| 1000+ | 21.04 грн |
| CPL-WB-00D3 |
Виробник: STMicroelectronics
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.1dB
Applications: GSM, W-CDMA, WiMax
Coupling Factor: 34dB
Coupler Type: Standard
Return Loss: 15dB
Supplier Device Package: 6-FlipChip
Part Status: Obsolete
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.1dB
Applications: GSM, W-CDMA, WiMax
Coupling Factor: 34dB
Coupler Type: Standard
Return Loss: 15dB
Supplier Device Package: 6-FlipChip
Part Status: Obsolete
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
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| DCPL-WB-00D3 |
|
Виробник: STMicroelectronics
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.2dB
Applications: W-CDMA
Coupling Factor: 37dB
Coupler Type: Dual Band, Dual Path
Return Loss: 15dB
Supplier Device Package: 8-FlipChip
Part Status: Active
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.2dB
Applications: W-CDMA
Coupling Factor: 37dB
Coupler Type: Dual Band, Dual Path
Return Loss: 15dB
Supplier Device Package: 8-FlipChip
Part Status: Active
товару немає в наявності
В кошику
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| LCDP1521SRL |
|
Виробник: STMicroelectronics
Description: THYRISTOR 60A 8SOIC
Packaging: Tape & Reel (TR)
Capacitance: 35pF
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Supplier Device Package: 8-SOIC
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 25 A
Current - Peak Pulse (8/20µs): 60 A
Description: THYRISTOR 60A 8SOIC
Packaging: Tape & Reel (TR)
Capacitance: 35pF
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Supplier Device Package: 8-SOIC
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 25 A
Current - Peak Pulse (8/20µs): 60 A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| STD155N3H6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| STD155N3LH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 48.45 грн |
| STH250N55F3-6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Description: MOSFET N-CH 55V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| STPS10M80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS10SM80CG-TR |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS15M80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
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| STPS15SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS20SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| STPS30M80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STPS30SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| STPS40SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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| TN1205H-6G-TR |
|
Виробник: STMicroelectronics
Description: SCR 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: SCR 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
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| MD2009DFP |
|
Виробник: STMicroelectronics
Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| STB155N3H6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
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| STF18N55M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Description: MOSFET N-CH 550V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
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| STFW60N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 46A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Description: MOSFET N-CH 650V 46A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
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| STI12N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Description: MOSFET N-CH 650V 8.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
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| STI16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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| STI21N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Description: MOSFET N-CH 650V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
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Мінімальне замовлення: 1000 шт
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| STI260N6F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Description: MOSFET N-CH 75V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
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| STI30N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Description: MOSFET N-CH 650V 22A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
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| STI32N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
Description: MOSFET N-CH 650V 24A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
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| STI35N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 27A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Description: MOSFET N-CH 650V 27A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
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Мінімальне замовлення: 1000 шт
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| STI8N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Description: MOSFET N-CH 650V 7A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
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Мінімальне замовлення: 1000 шт
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| STP210N75F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Description: MOSFET N-CH 75V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
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| STP34NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 883.17 грн |
| 10+ | 590.81 грн |
| 50+ | 479.65 грн |
| 100+ | 416.62 грн |
| 500+ | 360.67 грн |
| STP75N3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Description: MOSFET N-CH 30V 75A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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| STP7NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Description: MOSFET N-CH 600V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS10M80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS10M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STPS10M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS10SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Description: DIODE ARRAY SCHOT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS10SM80CR |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS10SM80CT |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS15M80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS15M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STPS15M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS15SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS15SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STPS15SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS20SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS20SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS20SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS30M80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.86 грн |
| STPS30M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STPS30M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS30SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| STPS30SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Description: DIODE ARR SCHOTT 80V 15A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.