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STM32L151RBT6 STM32L151RBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 4K x 8
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
1+537.20 грн
10+399.98 грн
25+370.81 грн
160+310.01 грн
320+300.19 грн
640+292.11 грн
В кошику  од. на суму  грн.
STM32L151V8T6 STM32L151V8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 100LQFP
товару немає в наявності
 Мінімальне замовлення: 540 шт
В кошику  од. на суму  грн.
STM32L151VBT6 STM32L151VBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Part Status: Not For New Designs
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
1+572.01 грн
10+427.40 грн
24+397.66 грн
90+342.17 грн
270+323.85 грн
450+317.07 грн
В кошику  од. на суму  грн.
STM32L152C8T6 STM32L152C8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+375.80 грн
10+278.08 грн
25+257.17 грн
100+219.80 грн
250+210.45 грн
В кошику  од. на суму  грн.
STM32L152CBT6 STM32L152CBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
на замовлення 771 шт:
термін постачання 21-31 дні (днів)
1+502.39 грн
10+373.39 грн
25+345.76 грн
100+295.99 грн
250+282.41 грн
500+274.22 грн
В кошику  од. на суму  грн.
STM32L152R8T6 STM32L152R8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
на замовлення 957 шт:
термін постачання 21-31 дні (днів)
1+410.61 грн
10+305.20 грн
25+282.50 грн
160+246.74 грн
В кошику  од. на суму  грн.
STM32L152RBT6 STM32L152RBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
на замовлення 635 шт:
термін постачання 21-31 дні (днів)
1+614.73 грн
10+459.48 грн
25+426.34 грн
160+357.02 грн
320+345.87 грн
В кошику  од. на суму  грн.
STM32L152V8T6 STM32L152V8T6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 64KB FLASH 100LQFP
товару немає в наявності
 Мінімальне замовлення: 540 шт
В кошику  од. на суму  грн.
STM32L152VBT6 STM32L152VBT6 STMicroelectronics en.CD00277537.pdf Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 502 шт:
термін постачання 21-31 дні (днів)
1+633.72 грн
10+474.79 грн
24+442.20 грн
90+380.92 грн
270+360.81 грн
450+353.37 грн
В кошику  од. на суму  грн.
STM3220G-EVAL STM3220G-EVAL STMicroelectronics evaluation-tools.html Description: STM32 F2 EVAL BRD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
товару немає в наявності
В кошику  од. на суму  грн.
STM3221G-EVAL STM3221G-EVAL STMicroelectronics en.DM00024612.pdf Description: STM32 F2 EVAL BRD
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
товару немає в наявності
В кошику  од. на суму  грн.
STL160N3LLH6 STL160N3LLH6 STMicroelectronics Description: MOSFET N-CH 30V 160A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL23NM60ND STL23NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL24NM60N STL24NM60N STMicroelectronics STL24NM60N.pdf Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+143.16 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL35N15F3 STL35N15F3 STMicroelectronics STL35N15F3.pdf Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STPSC1006G-TR STPSC1006G-TR STMicroelectronics STPSC1006_Rev_3.pdf Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STPSC806G-TR STPSC806G-TR STMicroelectronics diodes-and-rectifiers.html Description: DIODE SIL CARBIDE 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
товару немає в наявності
В кошику  од. на суму  грн.
STL24NM60N STL24NM60N STMicroelectronics STL24NM60N.pdf Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
1+378.18 грн
10+242.65 грн
100+173.97 грн
500+135.78 грн
1000+129.37 грн
В кошику  од. на суму  грн.
STL23NM60ND STL23NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
STPSC806G-TR STPSC806G-TR STMicroelectronics diodes-and-rectifiers.html Description: DIODE SIL CARBIDE 600V 8A D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
товару немає в наявності
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STN3N40K3 STN3N40K3 STMicroelectronics en.CD00278221.pdf Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
4000+21.50 грн
12000+18.44 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
STTH1002CGY-TR STTH1002CGY-TR STMicroelectronics en.CD00274261.pdf Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ESDAXLC4-1BF3 ESDAXLC4-1BF3 STMicroelectronics Description: TVS DIODE 3VWM 10VC 2FLIPCHIP
Power Line Protection: No
Power - Peak Pulse: 55W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: 2-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XFBGA, FCBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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STB6N52K3 STB6N52K3 STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
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STD3LN62K3 STD3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
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STD96N3LLH6 STD96N3LLH6 STMicroelectronics STD96N3LLH6.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics en.CD00047515.pdf Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STH180N10F3-2 STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STH270N4F3-6 STH270N4F3-6 STMicroelectronics STH270N4F3-6.pdf Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STL100N1VH5 STL100N1VH5 STMicroelectronics STL100N1VH5.pdf Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL40DN3LLH5 STL40DN3LLH5 STMicroelectronics stl40dn3llh5.pdf Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+31.54 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL75N3LLZH5 STL75N3LLZH5 STMicroelectronics STL75N3LLZH5.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
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STB24NM60N STB24NM60N STMicroelectronics en.DM00022852.pdf Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
1+530.08 грн
10+344.89 грн
100+251.26 грн
500+226.23 грн
В кошику  од. на суму  грн.
STB6N52K3 STB6N52K3 STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
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STD96N3LLH6 STD96N3LLH6 STMicroelectronics STD96N3LLH6.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2405 шт:
термін постачання 21-31 дні (днів)
3+116.30 грн
10+70.85 грн
100+47.23 грн
500+34.83 грн
1000+31.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
STGB3NC120HDT4 STGB3NC120HDT4 STMicroelectronics en.CD00047515.pdf Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
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STD3LN62K3 STD3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
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STL100N1VH5 STL100N1VH5 STMicroelectronics STL100N1VH5.pdf Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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STL75N3LLZH5 STL75N3LLZH5 STMicroelectronics STL75N3LLZH5.pdf Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
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STH180N10F3-2 STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
1+394.79 грн
10+253.09 грн
100+181.03 грн
В кошику  од. на суму  грн.
STH270N4F3-6 STH270N4F3-6 STMicroelectronics STH270N4F3-6.pdf Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
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STTH1002CGY-TR STTH1002CGY-TR STMicroelectronics en.CD00274261.pdf Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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STN3N40K3 STN3N40K3 STMicroelectronics en.CD00278221.pdf Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
на замовлення 31087 шт:
термін постачання 21-31 дні (днів)
4+87.82 грн
10+53.10 грн
50+39.39 грн
100+32.78 грн
500+25.45 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
STL40DN3LLH5 STL40DN3LLH5 STMicroelectronics stl40dn3llh5.pdf Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4647 шт:
термін постачання 21-31 дні (днів)
3+117.09 грн
10+71.46 грн
100+47.88 грн
500+35.44 грн
1000+32.38 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ESDARF03-1BF3 ESDARF03-1BF3 STMicroelectronics ESDARF03-1BF3.pdf Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+19.68 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
STT13005-K STT13005-K STMicroelectronics STT13005_Rev3_Nov2009.pdf Description: TRANS NPN 400V 2A SOT32-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bag
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-32-3
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STP24NM60N STP24NM60N STMicroelectronics en.CD00286763.pdf Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)
1+317.26 грн
50+156.46 грн
100+142.04 грн
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STB18N55M5 STB18N55M5 STMicroelectronics STB_D_F_P18N55M5_Rev_3.pdf Description: MOSFET N-CH 550V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STP180N10F3 STMicroelectronics Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
1+444.63 грн
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STP260N6F6 STP260N6F6 STMicroelectronics stp260n6f6.pdf Description: MOSFET N-CH 60V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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STP3LN62K3 STP3LN62K3 STMicroelectronics en.CD00298241.pdf Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
3+150.32 грн
10+92.41 грн
50+69.79 грн
100+58.64 грн
500+46.60 грн
Мінімальне замовлення: 3 шт
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STP52N25M5 STP52N25M5 STMicroelectronics STP52N25M5.pdf Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
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ESDARF03-1BF3 ESDARF03-1BF3 STMicroelectronics ESDARF03-1BF3.pdf Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STY112N65M5 STY112N65M5 STMicroelectronics en.CD00222838.pdf Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
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STB16N65M5 STB16N65M5 STMicroelectronics ST%28B%2CD%2916N65M5.pdf Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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STM6503SEAADG6F STM6503SEAADG6F STMicroelectronics en.CD00244356.pdf Description: IC SUPERVISOR 1 CHANNEL 8TDFN
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TDFN (2x2)
Voltage - Threshold: 2.925V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+70.73 грн
Мінімальне замовлення: 3000 шт
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LSM303DLMTR LSM303DLMTR STMicroelectronics LSM303DLM.pdf Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA
Part Status: Obsolete
Supplier Device Package: 28-LGA (5x5)
Sensor Type: Accelerometer, Magnetometer, 6 Axis
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 28-VFLGA Module
Packaging: Tape & Reel (TR)
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VIPER28HDTR VIPER28HDTR STMicroelectronics VIPER28.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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VIPER28LDTR VIPER28LDTR STMicroelectronics VIPER28.pdf Description: IC OFFLINE SWITCH FLYBACK 16SO
Power (Watts): 16 W
Voltage - Start Up: 14 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SO
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 60kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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STM32L151RBT6 en.CD00277537.pdf
STM32L151RBT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
EEPROM Size: 4K x 8
Program Memory Type: FLASH
DigiKey Programmable: Not Verified
на замовлення 650 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+537.20 грн
10+399.98 грн
25+370.81 грн
160+310.01 грн
320+300.19 грн
640+292.11 грн
В кошику  од. на суму  грн.
STM32L151V8T6 en.CD00277537.pdf
STM32L151V8T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LQFP
товару немає в наявності
Мінімальне замовлення: 540 шт
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STM32L151VBT6 en.CD00277537.pdf
STM32L151VBT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Part Status: Not For New Designs
Supplier Device Package: 100-LQFP (14x14)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+572.01 грн
10+427.40 грн
24+397.66 грн
90+342.17 грн
270+323.85 грн
450+317.07 грн
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STM32L152C8T6 en.CD00277537.pdf
STM32L152C8T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+375.80 грн
10+278.08 грн
25+257.17 грн
100+219.80 грн
250+210.45 грн
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STM32L152CBT6 en.CD00277537.pdf
STM32L152CBT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 48LQFP
DigiKey Programmable: Not Verified
Number of I/O: 37
Part Status: Not For New Designs
Supplier Device Package: 48-LQFP (7x7)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
на замовлення 771 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+502.39 грн
10+373.39 грн
25+345.76 грн
100+295.99 грн
250+282.41 грн
500+274.22 грн
В кошику  од. на суму  грн.
STM32L152R8T6 en.CD00277537.pdf
STM32L152R8T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
на замовлення 957 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+410.61 грн
10+305.20 грн
25+282.50 грн
160+246.74 грн
В кошику  од. на суму  грн.
STM32L152RBT6 en.CD00277537.pdf
STM32L152RBT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 20x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 4K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Number of I/O: 51
Part Status: Not For New Designs
Supplier Device Package: 64-LQFP (10x10)
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
на замовлення 635 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+614.73 грн
10+459.48 грн
25+426.34 грн
160+357.02 грн
320+345.87 грн
В кошику  од. на суму  грн.
STM32L152V8T6 en.CD00277537.pdf
STM32L152V8T6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 100LQFP
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику  од. на суму  грн.
STM32L152VBT6 en.CD00277537.pdf
STM32L152VBT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Cap Sense, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Not For New Designs
Number of I/O: 83
DigiKey Programmable: Not Verified
на замовлення 502 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+633.72 грн
10+474.79 грн
24+442.20 грн
90+380.92 грн
270+360.81 грн
450+353.37 грн
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STM3220G-EVAL evaluation-tools.html
STM3220G-EVAL
Виробник: STMicroelectronics
Description: STM32 F2 EVAL BRD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
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STM3221G-EVAL en.DM00024612.pdf
STM3221G-EVAL
Виробник: STMicroelectronics
Description: STM32 F2 EVAL BRD
Part Status: Obsolete
Utilized IC / Part: STM32 F2
Board Type: Evaluation Platform
Core Processor: ARM® Cortex®-M3
Contents: Board(s), LCD
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Box
товару немає в наявності
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STL160N3LLH6
STL160N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL23NM60ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STL23NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL24NM60N STL24NM60N.pdf
STL24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+143.16 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL35N15F3 STL35N15F3.pdf
STL35N15F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STPSC1006G-TR STPSC1006_Rev_3.pdf
STPSC1006G-TR
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STPSC806G-TR diodes-and-rectifiers.html
STPSC806G-TR
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
товару немає в наявності
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STL24NM60N STL24NM60N.pdf
STL24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+378.18 грн
10+242.65 грн
100+173.97 грн
500+135.78 грн
1000+129.37 грн
В кошику  од. на суму  грн.
STL23NM60ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STL23NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (8x8) HV
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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STPSC806G-TR diodes-and-rectifiers.html
STPSC806G-TR
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D²PAK
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
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STN3N40K3 en.CD00278221.pdf
STN3N40K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4000+21.50 грн
12000+18.44 грн
Мінімальне замовлення: 4000 шт
В кошику  од. на суму  грн.
STTH1002CGY-TR en.CD00274261.pdf
STTH1002CGY-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
ESDAXLC4-1BF3
ESDAXLC4-1BF3
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 10VC 2FLIPCHIP
Power Line Protection: No
Power - Peak Pulse: 55W
Voltage - Clamping (Max) @ Ipp: 10V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 1
Supplier Device Package: 2-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 2-XFBGA, FCBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику  од. на суму  грн.
STB24NM60N en.DM00022852.pdf
STB24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STB6N52K3 en.CD00208985.pdf
STB6N52K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
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STD3LN62K3 en.CD00298241.pdf
STD3LN62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
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STD96N3LLH6 STD96N3LLH6.pdf
STD96N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
STGB3NC120HDT4 en.CD00047515.pdf
STGB3NC120HDT4
Виробник: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STH180N10F3-2 en.DM00034472.pdf
STH180N10F3-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STH270N4F3-6 STH270N4F3-6.pdf
STH270N4F3-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STL100N1VH5 STL100N1VH5.pdf
STL100N1VH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL40DN3LLH5 stl40dn3llh5.pdf
STL40DN3LLH5
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+31.54 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
STL75N3LLZH5 STL75N3LLZH5.pdf
STL75N3LLZH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
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STB24NM60N en.DM00022852.pdf
STB24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+530.08 грн
10+344.89 грн
100+251.26 грн
500+226.23 грн
В кошику  од. на суму  грн.
STB6N52K3 en.CD00208985.pdf
STB6N52K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 525 V
товару немає в наявності
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STD96N3LLH6 STD96N3LLH6.pdf
STD96N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 2405 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+116.30 грн
10+70.85 грн
100+47.23 грн
500+34.83 грн
1000+31.77 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
STGB3NC120HDT4 en.CD00047515.pdf
STGB3NC120HDT4
Виробник: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
товару немає в наявності
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STD3LN62K3 en.CD00298241.pdf
STD3LN62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
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STL100N1VH5 STL100N1VH5.pdf
STL100N1VH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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STL75N3LLZH5 STL75N3LLZH5.pdf
STL75N3LLZH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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STH180N10F3-2 en.DM00034472.pdf
STH180N10F3-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+394.79 грн
10+253.09 грн
100+181.03 грн
В кошику  од. на суму  грн.
STH270N4F3-6 STH270N4F3-6.pdf
STH270N4F3-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
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STTH1002CGY-TR en.CD00274261.pdf
STTH1002CGY-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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STN3N40K3 en.CD00278221.pdf
STN3N40K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
на замовлення 31087 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+87.82 грн
10+53.10 грн
50+39.39 грн
100+32.78 грн
500+25.45 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
STL40DN3LLH5 stl40dn3llh5.pdf
STL40DN3LLH5
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 40A
Drain to Source Voltage (Vdss): 30V
Power - Max: 60W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 4647 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+117.09 грн
10+71.46 грн
100+47.88 грн
500+35.44 грн
1000+32.38 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
ESDARF03-1BF3 ESDARF03-1BF3.pdf
ESDARF03-1BF3
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
5000+19.68 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
STT13005-K STT13005_Rev3_Nov2009.pdf
STT13005-K
Виробник: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bag
Power - Max: 45 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: SOT-32-3
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STP24NM60N en.CD00286763.pdf
STP24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+317.26 грн
50+156.46 грн
100+142.04 грн
В кошику  од. на суму  грн.
STB18N55M5 STB_D_F_P18N55M5_Rev_3.pdf
STB18N55M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 16A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STP180N10F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+444.63 грн
В кошику  од. на суму  грн.
STP260N6F6 stp260n6f6.pdf
STP260N6F6
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STP3LN62K3 en.CD00298241.pdf
STP3LN62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A TO220
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 45W (Tc)
на замовлення 949 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+150.32 грн
10+92.41 грн
50+69.79 грн
100+58.64 грн
500+46.60 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
STP52N25M5 STP52N25M5.pdf
STP52N25M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
товару немає в наявності
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ESDARF03-1BF3 ESDARF03-1BF3.pdf
ESDARF03-1BF3
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 60W
Voltage - Breakdown (Min): 6V
Bidirectional Channels: 1
Supplier Device Package: 4-FlipChip
Voltage - Reverse Standoff (Typ): 3V
Capacitance @ Frequency: 0.6pF @ 1MHz
Applications: RF Antenna
Operating Temperature: -30°C ~ 85°C (TA)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 4-WFBGA, FCBGA
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
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STY112N65M5 en.CD00222838.pdf
STY112N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
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STB16N65M5 ST%28B%2CD%2916N65M5.pdf
STB16N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
STM6503SEAADG6F en.CD00244356.pdf
STM6503SEAADG6F
Виробник: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8TDFN
DigiKey Programmable: Not Verified
Supplier Device Package: 8-TDFN (2x2)
Voltage - Threshold: 2.925V
Reset Timeout: 140ms Minimum
Number of Voltages Monitored: 1
Operating Temperature: -40°C ~ 85°C (TA)
Reset: Active Low
Type: Reset Timer
Output: Open Drain or Open Collector
Mounting Type: Surface Mount
Package / Case: 8-WFDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3000+70.73 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
LSM303DLMTR LSM303DLM.pdf
LSM303DLMTR
Виробник: STMicroelectronics
Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA
Part Status: Obsolete
Supplier Device Package: 28-LGA (5x5)
Sensor Type: Accelerometer, Magnetometer, 6 Axis
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: I2C
Package / Case: 28-VFLGA Module
Packaging: Tape & Reel (TR)
товару немає в наявності
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VIPER28HDTR VIPER28.pdf
VIPER28HDTR
Виробник: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
VIPER28LDTR VIPER28.pdf
VIPER28LDTR
Виробник: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Power (Watts): 16 W
Voltage - Start Up: 14 V
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SO
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 60kHz
Duty Cycle: 80%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
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