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EMIF03-SIM02F3 EMIF03-SIM02F3 STMicroelectronics Description: FILTER RC(PI) 47 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.045" L x 0.045" W (1.14mm x 1.14mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 20pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
товару немає в наявності
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EMIF06-MSD04F3 EMIF06-MSD04F3 STMicroelectronics en.DM00029552.pdf Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-WFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF (Total)
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 550MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+17.40 грн
10000+15.76 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
EMIF06-SD03F3 EMIF06-SD03F3 STMicroelectronics Description: FILTER RC(PI) 50 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 24-WFBGA, FCBGA
Size / Dimension: 0.083" L x 0.083" W (2.10mm x 2.10mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 50Ohms, C = 15pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 50
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
товару немає в наявності
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EMIF08-LCD04M16 EMIF08-LCD04M16 STMicroelectronics en.CD00233780.pdf Description: FILTER LC(PI) 12NH/18PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 12nH, C = 18pF
Height: 0.022" (0.55mm)
Attenuation Value: -35dB @ 900MHz ~ 2GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 400MHz (Cutoff)
Resistance - Channel (Ohms): 12.5
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
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EMIF10-COM01C2 EMIF10-COM01C2 STMicroelectronics Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 25-WFBGA, FCBGA
Size / Dimension: 0.095" L x 0.095" W (2.41mm x 2.41mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 45pF (Total)
Height: 0.030" (0.76mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 10
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ESDA14V2-1BF3 ESDA14V2-1BF3 STMicroelectronics en.CD00238748.pdf Description: TVS DIODE 12VWM 2FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 2-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.2V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Last Time Buy
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ESDARF01-1BM2 ESDARF01-1BM2 STMicroelectronics en.CD00158044.pdf Description: TVS DIODE 100VWMWM SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: RF Antenna
Capacitance @ Frequency: 3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 100mV
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 700mV
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
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HDMIULC6-4SC6Y HDMIULC6-4SC6Y STMicroelectronics en.DM00030059.pdf Description: TVS DIODE 5VWM 17VC SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
3000+13.22 грн
6000+12.59 грн
9000+12.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
P0109AL 5AA4 P0109AL 5AA4 STMicroelectronics p0109al.pdf Description: SCR 100V 250MA SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 1 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6A, 7A
Current - On State (It (AV)) (Max): 160 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Current - On State (It (RMS)) (Max): 250 mA
Voltage - Off State: 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+16.48 грн
6000+14.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STN83003 STN83003 STMicroelectronics en.CD00108029.pdf Description: TRANS NPN 400V 1.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+19.28 грн
2000+16.87 грн
3000+16.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STN9260 STN9260 STMicroelectronics en.CD00293964.pdf Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+30.04 грн
2000+26.51 грн
3000+25.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STPS0540ZY STPS0540ZY STMicroelectronics en.CD00285444.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+5.66 грн
6000+4.92 грн
9000+4.65 грн
15000+4.08 грн
21000+3.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
X00619MN5AL2 X00619MN5AL2 STMicroelectronics en.CD00236084.pdf Description: SCR 600V 800MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 10A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 1 µA
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+10.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
Z0103NN5AA4 Z0103NN5AA4 STMicroelectronics en.CD00002268.pdf Description: TRIAC SENS GATE 800V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+10.65 грн
2000+9.22 грн
3000+8.70 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STAC2932F STMicroelectronics en.CD00265144.pdf Description: RF MOSFET 50V STAC244F
Packaging: Tray
Package / Case: STAC244F
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 390W
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STAC3932F STAC3932F STMicroelectronics en.CD00228753.pdf Description: TRANS RF PWR N-CH STAC244F
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STAC4932F STMicroelectronics en.CD00266057.pdf Description: RF MOSFET 100V STAC244F
Packaging: Tray
Package / Case: STAC244F
Frequency: 123MHz
Configuration: N-Channel
Power - Output: 1200W
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Part Status: Active
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 250 mA
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2STW200 2STW200 STMicroelectronics en.CD00267414.pdf Description: TRANS PNP DARL 80V 25A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 130 W
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BD136-16 BD136-16 STMicroelectronics bd139.pdf description Description: TRANS PNP 45V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 4983 шт:
термін постачання 21-31 дні (днів)
6+57.95 грн
50+25.26 грн
100+22.26 грн
500+15.95 грн
1000+14.35 грн
2000+13.01 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BD139-10 BD139-10 STMicroelectronics bd139.pdf Description: TRANS NPN 80V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
на замовлення 5431 шт:
термін постачання 21-31 дні (днів)
7+50.02 грн
50+21.57 грн
100+18.98 грн
500+13.52 грн
1000+12.13 грн
2000+10.96 грн
5000+9.54 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BD910 BD910 STMicroelectronics en.CD00001277.pdf Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
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BDX53BFP BDX53BFP STMicroelectronics BDX53BFP.pdf Description: TRANS NPN DARL 80V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 29 W
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BUL1102E BUL1102E STMicroelectronics en.CD00002461.pdf Description: TRANS NPN 450V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 70 W
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BUL1102EFP BUL1102EFP STMicroelectronics en.CD00002461.pdf Description: TRANS NPN 450V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 30 W
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BUL310FP BUL310FP STMicroelectronics BUL310FP.pdf Description: TRANS NPN 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 600mA, 3A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 2.5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 36 W
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BULB128-1 BULB128-1 STMicroelectronics BULB128-1.pdf Description: TRANS NPN 400V 4A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-262
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
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BULD118D-1 BULD118D-1 STMicroelectronics en.CD00001229.pdf Description: TRANS NPN 400V 2A IPAK
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D44H11FP D44H11FP STMicroelectronics en.CD00244195.pdf Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
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ST13007D ST13007D STMicroelectronics en.CD00002464.pdf Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
на замовлення 6713 шт:
термін постачання 21-31 дні (днів)
2+164.34 грн
50+76.85 грн
100+68.93 грн
500+51.64 грн
1000+47.45 грн
2000+43.92 грн
5000+40.05 грн
Мінімальне замовлення: 2
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ST13007DFP ST13007DFP STMicroelectronics en.CD00003361.pdf Description: TRANS NPN 400V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
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ST8812FX ST8812FX STMicroelectronics ST8812FX_Rev_1.pdf Description: TRANS NPN 600V 7A ISOWATT-218FX
Packaging: Tube
Package / Case: ISOWATT218FX
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V
Supplier Device Package: ISOWATT-218FX
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
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STD815CP40 STD815CP40 STMicroelectronics STD815CP40.pdf Description: TRANS NPN/PNP 400V 1.5A 8DIP
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STD830CP40 STD830CP40 STMicroelectronics STD830CP40.pdf Description: TRANS NPN/PNP 400V 3A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Supplier Device Package: 8-DIP
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STF10NM60ND STF10NM60ND STMicroelectronics std10nm60nd.pdf Description: MOSFET N-CH 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
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STF2N62K3 STF2N62K3 STMicroelectronics en.DM00030590.pdf Description: MOSFET N-CH 620V 2.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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STF34NM60ND STF34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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STGF35HF60W STGF35HF60W STMicroelectronics STGx%28W%2935HF60W.pdf Description: IGBT 600V 19A 40W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 40 W
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STGIPS10K60T STGIPS10K60T STMicroelectronics en.DM00023720.pdf Description: MOD IPM 600V 10A 25-SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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STGIPS14K60T STGIPS14K60T STMicroelectronics stgips14k60t.html Description: MOD IPM 600V 14A 25-SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 14 A
Voltage: 600 V
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STGP35N35LZ STGP35N35LZ STMicroelectronics en.CD00101367.pdf Description: IGBT 345V 40A 176W TO220
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STGWA60NC60WDR STGWA60NC60WDR STMicroelectronics STGWA60NC60WDR.pdf Description: IGBT 600V 130A 340W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 743µJ (on), 560µJ (off)
Test Condition: 390V, 40A, 10Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 340 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
1+588.27 грн
10+485.99 грн
100+405.00 грн
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STGWT38IH130D STGWT38IH130D STMicroelectronics STGW%28T%2938IH130D.pdf Description: IGBT 1300V 63A TO-3P
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
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STI10N62K3 STI10N62K3 STMicroelectronics en.CD00232917.pdf Description: MOSFET N-CH 620V 8.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
3+151.63 грн
10+120.94 грн
100+96.23 грн
500+76.41 грн
Мінімальне замовлення: 3
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STI13005-1 STI13005-1 STMicroelectronics STI13005-1.pdf Description: TRANS NPN 400V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
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STI13NM60N STI13NM60N STMicroelectronics en.CD00226101.pdf Description: MOSFET N-CH 600V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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STI22NM60N STI22NM60N STMicroelectronics en.CD00237949.pdf Description: MOSFET N-CH 600V 16A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
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STI24NM60N STI24NM60N STMicroelectronics en.CD00286763.pdf Description: MOSFET N CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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STI26NM60N STI26NM60N STMicroelectronics STx26NM60N_Rev5.pdf Description: MOSFET N-CH 600V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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STI4N62K3 STI4N62K3 STMicroelectronics en.CD00274723.pdf Description: MOSFET N-CH 620V 3.8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
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STI55NF03L STI55NF03L STMicroelectronics en.DM00029422.pdf Description: MOSFET N-CH 30V 55A I2PAK
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
3+147.66 грн
10+126.91 грн
100+98.96 грн
500+76.71 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STI5N52U STI5N52U STMicroelectronics STI5N52U.pdf Description: MOSFET N-CH 525V 4.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
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STI6N62K3 STI6N62K3 STMicroelectronics STx6N62K3.pdf Description: MOSFET N-CH 620V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
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STI76NF75 STI76NF75 STMicroelectronics en.CD00166974.pdf Description: MOSFET N-CH 75V 80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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STK13003 STK13003 STMicroelectronics en.CD00002603.pdf Description: TRANS NPN 400V 1.5A SOT-82-3
Packaging: Tube
Package / Case: SOT-82
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: SOT-82-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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STL128D STL128D STMicroelectronics en.DM00032995.pdf Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 700mA, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 65 W
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STL128DFP STL128DFP STMicroelectronics Description: TRANS NPN 400V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 700mA, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
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STP10NM60ND STP10NM60ND STMicroelectronics stpower-n-channel-mosfets-gt-200-v-to-700-v.html Description: MOSFET N-CH 600V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
2+194.50 грн
50+91.82 грн
100+82.56 грн
500+62.23 грн
Мінімальне замовлення: 2
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STP6N52K3 STP6N52K3 STMicroelectronics en.CD00208985.pdf Description: MOSFET N-CH 525V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
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STPS16170CR STPS16170CR STMicroelectronics en.CD00124386.pdf Description: DIODE ARRAY SCHOTT 170V 8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 170 V
товару немає в наявності
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STPS20100CT STPS20100CT STMicroelectronics en.CD00003063.pdf Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)
4+80.18 грн
50+58.64 грн
100+57.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
EMIF03-SIM02F3
EMIF03-SIM02F3
Виробник: STMicroelectronics
Description: FILTER RC(PI) 47 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.045" L x 0.045" W (1.14mm x 1.14mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 20pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 3
товару немає в наявності
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EMIF06-MSD04F3 en.DM00029552.pdf
EMIF06-MSD04F3
Виробник: STMicroelectronics
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-WFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF (Total)
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 550MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.40 грн
10000+15.76 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
EMIF06-SD03F3
EMIF06-SD03F3
Виробник: STMicroelectronics
Description: FILTER RC(PI) 50 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 24-WFBGA, FCBGA
Size / Dimension: 0.083" L x 0.083" W (2.10mm x 2.10mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 50Ohms, C = 15pF
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 50
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
товару немає в наявності
В кошику  од. на суму  грн.
EMIF08-LCD04M16 en.CD00233780.pdf
EMIF08-LCD04M16
Виробник: STMicroelectronics
Description: FILTER LC(PI) 12NH/18PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 12nH, C = 18pF
Height: 0.022" (0.55mm)
Attenuation Value: -35dB @ 900MHz ~ 2GHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: LC (Pi)
Center / Cutoff Frequency: 400MHz (Cutoff)
Resistance - Channel (Ohms): 12.5
ESD Protection: Yes
Part Status: Active
Number of Channels: 8
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EMIF10-COM01C2
EMIF10-COM01C2
Виробник: STMicroelectronics
Description: FILTER RC(PI) 200 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 25-WFBGA, FCBGA
Size / Dimension: 0.095" L x 0.095" W (2.41mm x 2.41mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 200Ohms, C = 45pF (Total)
Height: 0.030" (0.76mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 200
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 10
товару немає в наявності
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ESDA14V2-1BF3 en.CD00238748.pdf
ESDA14V2-1BF3
Виробник: STMicroelectronics
Description: TVS DIODE 12VWM 2FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: 2-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.2V
Power - Peak Pulse: 50W
Power Line Protection: No
Part Status: Last Time Buy
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ESDARF01-1BM2 en.CD00158044.pdf
ESDARF01-1BM2
Виробник: STMicroelectronics
Description: TVS DIODE 100VWMWM SOD882
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: RF Antenna
Capacitance @ Frequency: 3pF @ 1MHz
Voltage - Reverse Standoff (Typ): 100mV
Supplier Device Package: SOD-882
Bidirectional Channels: 1
Voltage - Breakdown (Min): 700mV
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
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HDMIULC6-4SC6Y en.DM00030059.pdf
HDMIULC6-4SC6Y
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-23-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.22 грн
6000+12.59 грн
9000+12.44 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
P0109AL 5AA4 p0109al.pdf
P0109AL 5AA4
Виробник: STMicroelectronics
Description: SCR 100V 250MA SOT23-3L
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 6 mA
Current - Gate Trigger (Igt) (Max): 1 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6A, 7A
Current - On State (It (AV)) (Max): 160 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 1 µA
Supplier Device Package: SOT-23-3L
Part Status: Active
Current - On State (It (RMS)) (Max): 250 mA
Voltage - Off State: 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+16.48 грн
6000+14.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STN83003 en.CD00108029.pdf
STN83003
Виробник: STMicroelectronics
Description: TRANS NPN 400V 1.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 500mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 350mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.6 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+19.28 грн
2000+16.87 грн
3000+16.01 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STN9260 en.CD00293964.pdf
STN9260
Виробник: STMicroelectronics
Description: TRANS PNP 600V 0.5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 10mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 5V
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 1.6 W
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+30.04 грн
2000+26.51 грн
3000+25.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STPS0540ZY en.CD00285444.pdf
STPS0540ZY
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 500MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 500 mA
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.66 грн
6000+4.92 грн
9000+4.65 грн
15000+4.08 грн
21000+3.91 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
X00619MN5AL2 en.CD00236084.pdf
X00619MN5AL2
Виробник: STMicroelectronics
Description: SCR 600V 800MA SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9A, 10A
Current - On State (It (AV)) (Max): 500 mA
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.35 V
Current - Off State (Max): 1 µA
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 800 mA
Voltage - Off State: 600 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+10.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
Z0103NN5AA4 en.CD00002268.pdf
Z0103NN5AA4
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 7 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 8A, 8.5A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: SOT-223
Part Status: Active
Current - On State (It (RMS)) (Max): 1 A
Voltage - Off State: 800 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+10.65 грн
2000+9.22 грн
3000+8.70 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STAC2932F en.CD00265144.pdf
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC244F
Packaging: Tray
Package / Case: STAC244F
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 390W
Gain: 20dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Voltage - Rated: 125 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STAC3932F en.CD00228753.pdf
STAC3932F
Виробник: STMicroelectronics
Description: TRANS RF PWR N-CH STAC244F
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STAC4932F en.CD00266057.pdf
Виробник: STMicroelectronics
Description: RF MOSFET 100V STAC244F
Packaging: Tray
Package / Case: STAC244F
Frequency: 123MHz
Configuration: N-Channel
Power - Output: 1200W
Gain: 26dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Part Status: Active
Voltage - Rated: 200 V
Voltage - Test: 100 V
Current - Test: 250 mA
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2STW200 en.CD00267414.pdf
2STW200
Виробник: STMicroelectronics
Description: TRANS PNP DARL 80V 25A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 80mA, 20A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10A, 3V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 130 W
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BD136-16 description bd139.pdf
BD136-16
Виробник: STMicroelectronics
Description: TRANS PNP 45V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
на замовлення 4983 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.95 грн
50+25.26 грн
100+22.26 грн
500+15.95 грн
1000+14.35 грн
2000+13.01 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BD139-10 bd139.pdf
BD139-10
Виробник: STMicroelectronics
Description: TRANS NPN 80V 1.5A SOT-32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-32
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
на замовлення 5431 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.02 грн
50+21.57 грн
100+18.98 грн
500+13.52 грн
1000+12.13 грн
2000+10.96 грн
5000+9.54 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BD910 en.CD00001277.pdf
BD910
Виробник: STMicroelectronics
Description: TRANS PNP 80V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 90 W
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BDX53BFP BDX53BFP.pdf
BDX53BFP
Виробник: STMicroelectronics
Description: TRANS NPN DARL 80V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 29 W
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BUL1102E en.CD00002461.pdf
BUL1102E
Виробник: STMicroelectronics
Description: TRANS NPN 450V 4A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 70 W
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BUL1102EFP en.CD00002461.pdf
BUL1102EFP
Виробник: STMicroelectronics
Description: TRANS NPN 450V 4A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 30 W
товару немає в наявності
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BUL310FP BUL310FP.pdf
BUL310FP
Виробник: STMicroelectronics
Description: TRANS NPN 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 600mA, 3A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 2.5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 36 W
товару немає в наявності
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BULB128-1 BULB128-1.pdf
BULB128-1
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1A, 4A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 2A, 5V
Supplier Device Package: TO-262
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 70 W
товару немає в наявності
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BULD118D-1 en.CD00001229.pdf
BULD118D-1
Виробник: STMicroelectronics
Description: TRANS NPN 400V 2A IPAK
товару немає в наявності
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D44H11FP en.CD00244195.pdf
D44H11FP
Виробник: STMicroelectronics
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 36 W
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ST13007D en.CD00002464.pdf
ST13007D
Виробник: STMicroelectronics
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
на замовлення 6713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+164.34 грн
50+76.85 грн
100+68.93 грн
500+51.64 грн
1000+47.45 грн
2000+43.92 грн
5000+40.05 грн
Мінімальне замовлення: 2
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ST13007DFP en.CD00003361.pdf
ST13007DFP
Виробник: STMicroelectronics
Description: TRANS NPN 400V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Supplier Device Package: TO-220FP
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 36 W
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ST8812FX ST8812FX_Rev_1.pdf
ST8812FX
Виробник: STMicroelectronics
Description: TRANS NPN 600V 7A ISOWATT-218FX
Packaging: Tube
Package / Case: ISOWATT218FX
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 4.5 @ 5A, 5V
Supplier Device Package: ISOWATT-218FX
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
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STD815CP40 STD815CP40.pdf
STD815CP40
Виробник: STMicroelectronics
Description: TRANS NPN/PNP 400V 1.5A 8DIP
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STD830CP40 STD830CP40.pdf
STD830CP40
Виробник: STMicroelectronics
Description: TRANS NPN/PNP 400V 3A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 3W
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 700mA, 5V
Supplier Device Package: 8-DIP
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STF10NM60ND std10nm60nd.pdf
STF10NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
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STF2N62K3 en.DM00030590.pdf
STF2N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.2A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 50 V
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STF34NM60ND STx34NM60ND_DS.pdf
STF34NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
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STGF35HF60W STGx%28W%2935HF60W.pdf
STGF35HF60W
Виробник: STMicroelectronics
Description: IGBT 600V 19A 40W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 19 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 40 W
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STGIPS10K60T en.DM00023720.pdf
STGIPS10K60T
Виробник: STMicroelectronics
Description: MOD IPM 600V 10A 25-SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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STGIPS14K60T stgips14k60t.html
STGIPS14K60T
Виробник: STMicroelectronics
Description: MOD IPM 600V 14A 25-SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 14 A
Voltage: 600 V
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STGP35N35LZ en.CD00101367.pdf
STGP35N35LZ
Виробник: STMicroelectronics
Description: IGBT 345V 40A 176W TO220
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STGWA60NC60WDR STGWA60NC60WDR.pdf
STGWA60NC60WDR
Виробник: STMicroelectronics
Description: IGBT 600V 130A 340W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 743µJ (on), 560µJ (off)
Test Condition: 390V, 40A, 10Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 340 W
на замовлення 436 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+588.27 грн
10+485.99 грн
100+405.00 грн
В кошику  од. на суму  грн.
STGWT38IH130D STGW%28T%2938IH130D.pdf
STGWT38IH130D
Виробник: STMicroelectronics
Description: IGBT 1300V 63A TO-3P
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: -/284ns
Switching Energy: 3.4mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 250 W
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STI10N62K3 en.CD00232917.pdf
STI10N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 8.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.63 грн
10+120.94 грн
100+96.23 грн
500+76.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STI13005-1 STI13005-1.pdf
STI13005-1
Виробник: STMicroelectronics
Description: TRANS NPN 400V 3A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
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STI13NM60N en.CD00226101.pdf
STI13NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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STI22NM60N en.CD00237949.pdf
STI22NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 50 V
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STI24NM60N en.CD00286763.pdf
STI24NM60N
Виробник: STMicroelectronics
Description: MOSFET N CH 600V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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STI26NM60N STx26NM60N_Rev5.pdf
STI26NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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STI4N62K3 en.CD00274723.pdf
STI4N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 3.8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
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STI55NF03L en.DM00029422.pdf
STI55NF03L
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 55A I2PAK
на замовлення 986 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.66 грн
10+126.91 грн
100+98.96 грн
500+76.71 грн
Мінімальне замовлення: 3
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STI5N52U STI5N52U.pdf
STI5N52U
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 4.4A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
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STI6N62K3 STx6N62K3.pdf
STI6N62K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V
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STI76NF75 en.CD00166974.pdf
STI76NF75
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 80A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
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STK13003 en.CD00002603.pdf
STK13003
Виробник: STMicroelectronics
Description: TRANS NPN 400V 1.5A SOT-82-3
Packaging: Tube
Package / Case: SOT-82
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 1A, 2V
Supplier Device Package: SOT-82-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 40 W
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STL128D en.DM00032995.pdf
STL128D
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 700mA, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 65 W
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STL128DFP
STL128DFP
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 700mA, 3.5A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
товару немає в наявності
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STP10NM60ND stpower-n-channel-mosfets-gt-200-v-to-700-v.html
STP10NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+194.50 грн
50+91.82 грн
100+82.56 грн
500+62.23 грн
Мінімальне замовлення: 2
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STP6N52K3 en.CD00208985.pdf
STP6N52K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
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STPS16170CR en.CD00124386.pdf
STPS16170CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 170V 8A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 15 µA @ 170 V
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STPS20100CT en.CD00003063.pdf
STPS20100CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.18 грн
50+58.64 грн
100+57.91 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
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