Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (127248) > Сторінка 314 з 2121
| Фото | Назва | Виробник | Інформація |
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STB20N95K5 | STMicroelectronics |
 Description: MOSFET N-CH 950V 17.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 987 шт: термін постачання 21-31 дні (днів) |
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STB21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
на замовлення 1276 шт: термін постачання 21-31 дні (днів) |
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STD6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 6925 шт: термін постачання 21-31 дні (днів) |
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STN0214 | STMicroelectronics |
Description: TRANS NPN 1200V 0.2A SOT-223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1.6 W |
на замовлення 5073 шт: термін постачання 21-31 дні (днів) |
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STPS30L30DJF-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 30A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A Current - Reverse Leakage @ Vr: 750 µA @ 30 V |
на замовлення 2900 шт: термін постачання 21-31 дні (днів) |
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STPS3L40SY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 4554 шт: термін постачання 21-31 дні (днів) |
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STTH30R02DJF-TR | STMicroelectronics |
Description: DIODE STD 200V 30A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 13789 шт: термін постачання 21-31 дні (днів) |
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STTH5R06DJF-TR | STMicroelectronics |
Description: DIODE STANDARD 600V 5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A Current - Reverse Leakage @ Vr: 60 µA @ 600 V |
на замовлення 4256 шт: термін постачання 21-31 дні (днів) |
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STTH8R03DJF-TR | STMicroelectronics |
Description: DIODE STANDARD 300V 8A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 300 V |
на замовлення 3565 шт: термін постачання 21-31 дні (днів) |
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DIP1524-01D3 | STMicroelectronics |
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, FCBGA Mounting Type: Surface Mount Type: Diplexer Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz Low Band Attenuation (min / max dB): 20.00dB / - High Band Attenuation (min / max dB): 18.00dB / - Return Loss (Low Band / High Band): 10.0dB / 20.0dB Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS10L40CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 40V 5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V |
на замовлення 1962 шт: термін постачання 21-31 дні (днів) |
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STB20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STD6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STN0214 | STMicroelectronics |
Description: TRANS NPN 1200V 0.2A SOT-223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V Supplier Device Package: SOT-223 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1.6 W |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STPS30L30DJF-TR | STMicroelectronics |
Description: DIODE SCHOTTKY 30V 30A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A Current - Reverse Leakage @ Vr: 750 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS3L40SY | STMicroelectronics |
Description: DIODE SCHOTTKY 40V 3A SMC Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STTH30R02DJF-TR | STMicroelectronics |
Description: DIODE STD 200V 30A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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STTH5R06DJF-TR | STMicroelectronics |
Description: DIODE STANDARD 600V 5A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A Current - Reverse Leakage @ Vr: 60 µA @ 600 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STTH8R03DJF-TR | STMicroelectronics |
Description: DIODE STANDARD 300V 8A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 300 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DIP1524-01D3 | STMicroelectronics |
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, FCBGA Mounting Type: Surface Mount Type: Diplexer Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz Low Band Attenuation (min / max dB): 20.00dB / - High Band Attenuation (min / max dB): 18.00dB / - Return Loss (Low Band / High Band): 10.0dB / 20.0dB Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LET9060 | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Packaging: Tube Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Formed Lead) Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LET9060S | STMicroelectronics |
Description: RF MOSFET LDMOS 28V POWERSO-10RF Packaging: Tube Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) Current Rating (Amps): 12A Frequency: 960MHz Power - Output: 60W Gain: 17.2dB Technology: LDMOS Supplier Device Package: PowerSO-10RF (Straight Lead) Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 28 V Current - Test: 300 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STF6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 616 шт: термін постачання 21-31 дні (днів) |
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STFI10NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 10A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI13NK60Z | STMicroelectronics |
Description: MOSFET N-CH 600V 13A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI13NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 11A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI20NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 17A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI26NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 20A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STFI34NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 29A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||||||
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STP20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 658 шт: термін постачання 21-31 дні (днів) |
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STP21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
на замовлення 947 шт: термін постачання 21-31 дні (днів) |
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STP6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 443 шт: термін постачання 21-31 дні (днів) |
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STW20N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 17.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V |
на замовлення 191 шт: термін постачання 21-31 дні (днів) |
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STW21N90K5 | STMicroelectronics |
Description: MOSFET N-CH 900V 18.5A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW6N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 9A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 754 шт: термін постачання 21-31 дні (днів) |
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MJB44H11T4 | STMicroelectronics |
Description: TRANS NPN 80V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: D2PAK Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F0DISCOVERY | STMicroelectronics |
Description: DISCOVERY STM32F051R8 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M0 Board Type: Evaluation Platform Utilized IC / Part: STM32F051R8 Platform: Discovery Part Status: Active |
на замовлення 262 шт: термін постачання 21-31 дні (днів) |
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M24LR04E-RDW6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24LR04E-RMN6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 65000 шт: термін постачання 21-31 дні (днів) |
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STM32L152D-EVAL | STMicroelectronics |
Description: STM32L152 EVAL BRD Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32L152 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24LR04E-RDW6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-TSSOP Part Status: Active |
на замовлення 7032 шт: термін постачання 21-31 дні (днів) |
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M24LR04E-RMN6T/2 | STMicroelectronics |
Description: IC RFID TRANSP 13.56MHZ 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 13.56MHz Interface: I2C Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 5.5V Standards: ISO 15693, ISO 18000-3, NFC Supplier Device Package: 8-SOIC Part Status: Active |
на замовлення 66681 шт: термін постачання 21-31 дні (днів) |
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TL431ACZ-AP | STMicroelectronics |
 Description: IC VREF SHUNT ADJ 1% TO92-3Packaging: Cut Tape (CT) Tolerance: ±1% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.495V Part Status: Active Current - Cathode: 600 µA Current - Output: 100 mA Voltage - Output (Max): 36 V |
на замовлення 1613 шт: термін постачання 21-31 дні (днів) |
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A5975AD | STMicroelectronics |
Description: IC REG BUCK ADJ 2.5A 8HSOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 2.5A Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 500kHz Voltage - Input (Max): 36V Topology: Buck Supplier Device Package: 8-HSOP Synchronous Rectifier: No Voltage - Output (Max): 35V Voltage - Input (Min): 4V Voltage - Output (Min/Fixed): 1.235V Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-MKI107V2 | STMicroelectronics |
Description: BOARD ADAPTER L3GD20 DIL24 Packaging: Bulk Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s Interface: I2C, Serial, SPI Voltage - Supply: 2.4V ~ 3.6V Sensor Type: Gyroscope, 3 Axis Utilized IC / Part: L3GD20 Supplied Contents: Board(s) Embedded: No Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-IDZ401V1 | STMicroelectronics |
Description: EVAL BOARD |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-ILH004V1 | STMicroelectronics |
Description: BOARD EVAL BALLAST L6382D5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-ILL038V1 | STMicroelectronics |
Description: BOARD EVAL LED DRIVER L6585DE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-TLL008V1 | STMicroelectronics |
Description: EVAL BOARD FOR STCF04 Packaging: Bulk Voltage - Output: 2.5V ~ 5V Voltage - Input: 2.7V ~ 5V Contents: Board(s) Utilized IC / Part: STCF04 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STEVAL-ISB013V1 | STMicroelectronics |
Description: EVAL BOARD FOR STC3105 Packaging: Bulk Function: Battery Monitor Type: Power Management Contents: Board(s) Utilized IC / Part: STC3105 Supplied Contents: Board(s) Primary Attributes: Monitors Current, Voltage Embedded: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ECMF06-6AM16 | STMicroelectronics |
Description: CMC 100MA 6LN SMD ESD Features: TVS Diode ESD Protection Packaging: Tape & Reel (TR) Package / Case: 16-UFDFN Filter Type: Signal Line Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 6 Operating Temperature: -40°C ~ 85°C Height (Max): 0.022" (0.55mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 4Ohm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| M95M01-RCS6TP/A | STMicroelectronics |
Description: IC EEPROM 1MBIT 5MHZ 8WLCSP Packaging: Cut Tape (CT) Package / Case: 8-UFBGA, CSPBGA Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 16 MHz Memory Format: EEPROM Supplier Device Package: 8-WLCSP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: SPI Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ECMF06-6AM16 | STMicroelectronics |
Description: CMC 100MA 6LN SMD ESD Features: TVS Diode ESD Protection Packaging: Cut Tape (CT) Package / Case: 16-UFDFN Filter Type: Signal Line Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 6 Operating Temperature: -40°C ~ 85°C Height (Max): 0.022" (0.55mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 4Ohm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
.jpg "ST6G3244MEBJR") |
ST6G3244MEBJR | STMicroelectronics |
Description: IC TRNSLTR BIDIR 25FLIPCHIP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ST6G3244MEBJR | STMicroelectronics |
Description: IC TRNSLTR BIDIR 25FLIPCHIP |
на замовлення 63 шт: термін постачання 21-31 дні (днів) |
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STM32F051C8T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 48LQFP Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Part Status: Active Number of I/O: 39 DigiKey Programmable: Not Verified |
на замовлення 16213 шт: термін постачання 21-31 дні (днів) |
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STM32F051K8U6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 32UFQFPN Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 32-UFQFPN (5x5) Part Status: Active Number of I/O: 27 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F051R8T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 64LQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 19x12b; D/A 1x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Part Status: Active Number of I/O: 55 DigiKey Programmable: Not Verified |
на замовлення 14185 шт: термін постачання 21-31 дні (днів) |
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| STB20N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 987 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 557.13 грн |
| 10+ | 365.82 грн |
| 100+ | 286.46 грн |
| STB21N90K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
на замовлення 1276 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 505.07 грн |
| 10+ | 329.68 грн |
| 100+ | 250.43 грн |
| STD6N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 6925 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.79 грн |
| 10+ | 140.30 грн |
| 100+ | 97.60 грн |
| 500+ | 78.59 грн |
| STN0214 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 1200V 0.2A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
Description: TRANS NPN 1200V 0.2A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
на замовлення 5073 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 104.12 грн |
| 10+ | 63.45 грн |
| 100+ | 42.31 грн |
| 500+ | 31.18 грн |
| STPS30L30DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
на замовлення 2900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 111.89 грн |
| 10+ | 68.54 грн |
| 100+ | 49.38 грн |
| 500+ | 36.63 грн |
| 1000+ | 33.50 грн |
| STPS3L40SY |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 4554 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.85 грн |
| 12+ | 25.14 грн |
| 100+ | 17.08 грн |
| 500+ | 12.56 грн |
| 1000+ | 11.41 грн |
| STTH30R02DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE STD 200V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STD 200V 30A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 13789 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 188.04 грн |
| 10+ | 117.03 грн |
| 100+ | 80.26 грн |
| 500+ | 60.57 грн |
| 1000+ | 56.20 грн |
| STTH5R06DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Description: DIODE STANDARD 600V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 4256 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 187.27 грн |
| 10+ | 116.43 грн |
| 100+ | 79.79 грн |
| 500+ | 60.17 грн |
| 1000+ | 55.62 грн |
| STTH8R03DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 300V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Description: DIODE STANDARD 300V 8A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
на замовлення 3565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.43 грн |
| 10+ | 102.81 грн |
| 100+ | 78.83 грн |
| 500+ | 59.63 грн |
| 1000+ | 55.01 грн |
| DIP1524-01D3 |
|
Виробник: STMicroelectronics
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| STPS10L40CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 40V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
на замовлення 1962 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.29 грн |
| 12+ | 24.99 грн |
| STB20N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STB21N90K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 212.46 грн |
| STD6N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 74.59 грн |
| 5000+ | 68.42 грн |
| STN0214 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 1200V 0.2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
Description: TRANS NPN 1200V 0.2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300 mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 200mA, 2V
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1.6 W
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 31.47 грн |
| 2000+ | 27.84 грн |
| 3000+ | 26.59 грн |
| 5000+ | 23.63 грн |
| STPS30L30DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
Description: DIODE SCHOTTKY 30V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 30 A
Current - Reverse Leakage @ Vr: 750 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| STPS3L40SY |
|
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Description: DIODE SCHOTTKY 40V 3A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 11.23 грн |
| STTH30R02DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE STD 200V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STD 200V 30A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 55.12 грн |
| 6000+ | 49.86 грн |
| 9000+ | 48.93 грн |
| STTH5R06DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
Description: DIODE STANDARD 600V 5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 600 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 54.71 грн |
| STTH8R03DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE STANDARD 300V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
Description: DIODE STANDARD 300V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 55.98 грн |
| DIP1524-01D3 |
|
Виробник: STMicroelectronics
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
Description: RF DIPLX 1589.655MHZ/2.55GHZ BGA
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: Diplexer
Frequency Bands (Low / High): 1573.42MHz ~ 1605.89MHz / 2.4GHz ~ 2.7GHz
Low Band Attenuation (min / max dB): 20.00dB / -
High Band Attenuation (min / max dB): 18.00dB / -
Return Loss (Low Band / High Band): 10.0dB / 20.0dB
Part Status: Active
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| LET9060 |
|
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Formed Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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| LET9060S |
|
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
Description: RF MOSFET LDMOS 28V POWERSO-10RF
Packaging: Tube
Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Current Rating (Amps): 12A
Frequency: 960MHz
Power - Output: 60W
Gain: 17.2dB
Technology: LDMOS
Supplier Device Package: PowerSO-10RF (Straight Lead)
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 300 mA
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| STF6N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 616 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 178.72 грн |
| 50+ | 84.61 грн |
| 100+ | 76.15 грн |
| 500+ | 57.55 грн |
| STFI10NK60Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
Description: MOSFET N-CH 600V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 25 V
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| STFI13NK60Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Description: MOSFET N-CH 600V 13A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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| STFI13NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: MOSFET N-CH 600V 11A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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| STFI20NK50Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Description: MOSFET N-CH 500V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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| STFI24NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 17A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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| STFI26NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
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| STFI34NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Description: MOSFET N-CH 600V 29A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
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| STP20N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 658 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 535.38 грн |
| 50+ | 278.40 грн |
| 100+ | 255.48 грн |
| 500+ | 202.11 грн |
| STP21N90K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
на замовлення 947 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 491.86 грн |
| 50+ | 255.36 грн |
| 100+ | 234.26 грн |
| 500+ | 185.59 грн |
| STP6N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 443 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 192.70 грн |
| 50+ | 92.20 грн |
| 100+ | 83.12 грн |
| STW20N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Description: MOSFET N-CH 950V 17.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
на замовлення 191 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 494.97 грн |
| 30+ | 275.11 грн |
| 120+ | 230.74 грн |
| STW21N90K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 900V 18.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
Description: MOSFET N-CH 900V 18.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 9A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 100 V
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В кошику
од. на суму грн.
| STW6N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 9A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 754 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.13 грн |
| 30+ | 110.49 грн |
| 120+ | 89.79 грн |
| 510+ | 70.00 грн |
| MJB44H11T4 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
товару немає в наявності
В кошику
од. на суму грн.
| STM32F0DISCOVERY |
|
Виробник: STMicroelectronics
Description: DISCOVERY STM32F051R8 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Board Type: Evaluation Platform
Utilized IC / Part: STM32F051R8
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32F051R8 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M0
Board Type: Evaluation Platform
Utilized IC / Part: STM32F051R8
Platform: Discovery
Part Status: Active
на замовлення 262 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2185.80 грн |
| M24LR04E-RDW6T/2 |
|
Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| M24LR04E-RMN6T/2 |
|
Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 65000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 45.66 грн |
| 5000+ | 42.88 грн |
| 7500+ | 42.25 грн |
| 12500+ | 38.91 грн |
| STM32L152D-EVAL |
|
Виробник: STMicroelectronics
Description: STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Part Status: Obsolete
Description: STM32L152 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32L152
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| M24LR04E-RDW6T/2 |
|
Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-TSSOP
Part Status: Active
на замовлення 7032 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.95 грн |
| 10+ | 49.09 грн |
| 25+ | 48.40 грн |
| 50+ | 45.17 грн |
| 100+ | 40.38 грн |
| 250+ | 40.04 грн |
| 500+ | 38.80 грн |
| 1000+ | 37.41 грн |
| M24LR04E-RMN6T/2 |
|
Виробник: STMicroelectronics
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC RFID TRANSP 13.56MHZ 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 13.56MHz
Interface: I2C
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 5.5V
Standards: ISO 15693, ISO 18000-3, NFC
Supplier Device Package: 8-SOIC
Part Status: Active
на замовлення 66681 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.28 грн |
| 10+ | 52.75 грн |
| 25+ | 51.33 грн |
| 50+ | 47.15 грн |
| 100+ | 46.11 грн |
| 250+ | 44.73 грн |
| 500+ | 42.97 грн |
| 1000+ | 41.94 грн |
| TL431ACZ-AP | |
|
Виробник: STMicroelectronics
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 1% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±1%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.495V
Part Status: Active
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
на замовлення 1613 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.54 грн |
| 30+ | 10.18 грн |
| 34+ | 9.01 грн |
| 100+ | 7.22 грн |
| 250+ | 6.63 грн |
| 500+ | 6.28 грн |
| 1000+ | 5.89 грн |
| A5975AD |
|
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 2.5A 8HSOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: No
Voltage - Output (Max): 35V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 1.235V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK ADJ 2.5A 8HSOP
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 2.5A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 500kHz
Voltage - Input (Max): 36V
Topology: Buck
Supplier Device Package: 8-HSOP
Synchronous Rectifier: No
Voltage - Output (Max): 35V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 1.235V
Grade: Automotive
Qualification: AEC-Q100
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В кошику
од. на суму грн.
| STEVAL-MKI107V2 |
|
Виробник: STMicroelectronics
Description: BOARD ADAPTER L3GD20 DIL24
Packaging: Bulk
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Voltage - Supply: 2.4V ~ 3.6V
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Obsolete
Description: BOARD ADAPTER L3GD20 DIL24
Packaging: Bulk
Sensitivity: 70m°/s, 17.5m°/s, 8.75m°/s
Interface: I2C, Serial, SPI
Voltage - Supply: 2.4V ~ 3.6V
Sensor Type: Gyroscope, 3 Axis
Utilized IC / Part: L3GD20
Supplied Contents: Board(s)
Embedded: No
Sensing Range: ±250°/sec, ±500°/sec, ±2000°/sec
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-IDZ401V1 |
|
Виробник: STMicroelectronics
Description: EVAL BOARD
Description: EVAL BOARD
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STEVAL-ILH004V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL BALLAST L6382D5
Description: BOARD EVAL BALLAST L6382D5
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ILL038V1 |
|
Виробник: STMicroelectronics
Description: BOARD EVAL LED DRIVER L6585DE
Description: BOARD EVAL LED DRIVER L6585DE
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-TLL008V1 |
|
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STCF04
Packaging: Bulk
Voltage - Output: 2.5V ~ 5V
Voltage - Input: 2.7V ~ 5V
Contents: Board(s)
Utilized IC / Part: STCF04
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Description: EVAL BOARD FOR STCF04
Packaging: Bulk
Voltage - Output: 2.5V ~ 5V
Voltage - Input: 2.7V ~ 5V
Contents: Board(s)
Utilized IC / Part: STCF04
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STEVAL-ISB013V1 |
|
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STC3105
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Contents: Board(s)
Utilized IC / Part: STC3105
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage
Embedded: No
Part Status: Obsolete
Description: EVAL BOARD FOR STC3105
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Contents: Board(s)
Utilized IC / Part: STC3105
Supplied Contents: Board(s)
Primary Attributes: Monitors Current, Voltage
Embedded: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| ECMF06-6AM16 |
|
Виробник: STMicroelectronics
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 4Ohm
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 4Ohm
товару немає в наявності
В кошику
од. на суму грн.
| M95M01-RCS6TP/A |
|
Виробник: STMicroelectronics
Description: IC EEPROM 1MBIT 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 16 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 1MBIT 5MHZ 8WLCSP
Packaging: Cut Tape (CT)
Package / Case: 8-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 16 MHz
Memory Format: EEPROM
Supplier Device Package: 8-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ECMF06-6AM16 |
|
Виробник: STMicroelectronics
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 4Ohm
Description: CMC 100MA 6LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 6
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 4Ohm
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од. на суму грн.
| ST6G3244MEBJR |
|
Виробник: STMicroelectronics
Description: IC TRNSLTR BIDIR 25FLIPCHIP
Description: IC TRNSLTR BIDIR 25FLIPCHIP
товару немає в наявності
В кошику
од. на суму грн.
| ST6G3244MEBJR |
|
Виробник: STMicroelectronics
Description: IC TRNSLTR BIDIR 25FLIPCHIP
Description: IC TRNSLTR BIDIR 25FLIPCHIP
на замовлення 63 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.81 грн |
| 10+ | 169.55 грн |
| 25+ | 159.95 грн |
| STM32F051C8T6 |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Part Status: Active
Number of I/O: 39
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Part Status: Active
Number of I/O: 39
DigiKey Programmable: Not Verified
на замовлення 16213 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 264.97 грн |
| 10+ | 192.75 грн |
| 25+ | 177.16 грн |
| 100+ | 150.10 грн |
| 250+ | 142.41 грн |
| 500+ | 137.77 грн |
| 1000+ | 131.76 грн |
| 2500+ | 127.80 грн |
| STM32F051K8U6 |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 32UFQFPN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-UFQFPN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32UFQFPN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 32-UFQFPN (5x5)
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| STM32F051R8T6 |
|
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 1x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Part Status: Active
Number of I/O: 55
DigiKey Programmable: Not Verified
на замовлення 14185 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 279.73 грн |
| 10+ | 204.20 грн |
| 25+ | 187.75 грн |
| 160+ | 154.84 грн |
| 320+ | 149.32 грн |
| 640+ | 144.77 грн |
| 1120+ | 139.38 грн |
| 2560+ | 135.69 грн |