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STEVAL-SPBT2ATV3 STEVAL-SPBT2ATV3 STMicroelectronics en.DM00056231.pdf Description: BOARD EVAL FOR SPBT2532C2.AT2
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STEVAL-MKI129V2 STEVAL-MKI129V2 STMicroelectronics audio-ic-eval-boards.html Description: BOARD EVAL FOR MP34DB01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DB01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
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STEVAL-MKI129V1 STEVAL-MKI129V1 STMicroelectronics en.DM00072699.pdf Description: BOARD EVAL FOR MP45DT02
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
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STP105N3LL STP105N3LL STMicroelectronics en.DM00071078.pdf Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
3+117.78 грн
50+64.31 грн
100+61.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STT6N3LLH6 STT6N3LLH6 STMicroelectronics en.DM00051684.pdf Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
на замовлення 6828 шт:
термін постачання 21-31 дні (днів)
6+60.48 грн
10+39.39 грн
100+25.93 грн
500+18.68 грн
1000+16.86 грн
Мінімальне замовлення: 6
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STT6N3LLH6 STT6N3LLH6 STMicroelectronics en.DM00051684.pdf Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
3000+16.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STH310N10F7-2 STH310N10F7-2 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1000+177.71 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STH310N10F7-2 STH310N10F7-2 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 6034 шт:
термін постачання 21-31 дні (днів)
1+387.56 грн
10+264.62 грн
100+197.55 грн
500+165.29 грн
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STTH30S06W STTH30S06W STMicroelectronics 600v-ultrafast-rectifiers.html Description: DIODE GEN PURP 600V 30A DO247-2
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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STU6N65K3 STU6N65K3 STMicroelectronics en.CD00297329.pdf Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
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STW46NF30 STW46NF30 STMicroelectronics en.DM00022942.pdf Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
1+350.16 грн
30+174.78 грн
120+145.69 грн
510+122.14 грн
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STWA45N65M5 STWA45N65M5 STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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STB24N60M2 STB24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STD80N4F6 STD80N4F6 STMicroelectronics en.DM00109418.pdf Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+144.84 грн
10+93.57 грн
100+69.59 грн
500+55.75 грн
1000+50.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGF30H60DF STGF30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT 600V 60A 37W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
товару немає в наявності
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STGP20H60DF STGP20H60DF STMicroelectronics en.DM00066598.pdf Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
2+191.79 грн
50+90.58 грн
100+81.47 грн
500+61.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP30H60DF STGP30H60DF STMicroelectronics en.DM00040343.pdf Description: IGBT TRENCH FS 600V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
2+259.43 грн
50+125.54 грн
100+113.49 грн
500+86.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP35HF60W STGP35HF60W STMicroelectronics en.DM00069286.pdf Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
товару немає в наявності
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STP240N10F7 STP240N10F7 STMicroelectronics en.DM00070204.pdf Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 8918 шт:
термін постачання 21-31 дні (днів)
2+299.22 грн
50+150.00 грн
100+136.61 грн
500+116.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP7N80K5 STP7N80K5 STMicroelectronics en.DM00060222.pdf Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
на замовлення 741 шт:
термін постачання 21-31 дні (днів)
2+210.89 грн
50+100.37 грн
100+90.44 грн
500+68.51 грн
Мінімальне замовлення: 2
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STP9NM40N STP9NM40N STMicroelectronics en.DM00067012.pdf Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
товару немає в наявності
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LET9070CB LET9070CB STMicroelectronics en.DM00067622.pdf Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
товару немає в наявності
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STAC2933 STAC2933 STMicroelectronics en.DM00046494.pdf Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 23.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STAC2943 STAC2943 STMicroelectronics en.DM00046491.pdf Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STAC4933 STAC4933 STMicroelectronics en.DM00046797.pdf Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Part Status: Obsolete
Voltage - Rated: 200 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STB24N60M2 STB24N60M2 STMicroelectronics en.DM00070788.pdf Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STD80N4F6 STD80N4F6 STMicroelectronics en.DM00109418.pdf Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+51.34 грн
5000+47.20 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STFI10N65K3 STFI10N65K3 STMicroelectronics en.CD00235865.pdf Description: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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STFI130N10F3 STFI130N10F3 STMicroelectronics en.DM00022938.pdf Description: MOSFET N-CH 100V 46A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
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STGF17NC60SD STGF17NC60SD STMicroelectronics STGF17NC60SD_ds.pdf Description: IGBT 600V 17A 32W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 17.5ns/175ns
Switching Energy: 135µJ (on), 815µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54.5 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32 W
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
2+183.83 грн
10+147.14 грн
100+117.14 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STH310N10F7-6 STH310N10F7-6 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+192.79 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STH310N10F7-6 STH310N10F7-6 STMicroelectronics en.DM00072096.pdf Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
1+467.14 грн
10+309.75 грн
100+225.13 грн
500+176.38 грн
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STL22N65M5 STL22N65M5 STMicroelectronics en.DM00062074.pdf Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
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STL36N55M5 STL36N55M5 STMicroelectronics en.DM00044786.pdf Description: MOSFET N-CH 550V 22.5A 4PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
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STL42N65M5 STL42N65M5 STMicroelectronics STL42N65M5.pdf Description: MOSFET N-CH 650V 4A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
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STF7N80K5 STF7N80K5 STMicroelectronics stf7n80k5.pdf Description: MOSFET N CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
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STFI24N60M2 STFI24N60M2 STMicroelectronics en.DM00071944.pdf Description: MOSFET N CH 600V 18A TO281
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STFI6N65K3 STFI6N65K3 STMicroelectronics en.CD00297329.pdf Description: MOSFET N-CH 650V 5.4A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
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STL22N65M5 STL22N65M5 STMicroelectronics en.DM00062074.pdf Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
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STL36N55M5 STL36N55M5 STMicroelectronics en.DM00044786.pdf Description: MOSFET N-CH 550V 22.5A 4PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
товару немає в наявності
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STL42N65M5 STL42N65M5 STMicroelectronics STL42N65M5.pdf Description: MOSFET N-CH 650V 4A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
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STW78N65M5 STW78N65M5 STMicroelectronics en.DM00060366.pdf Description: MOSFET N-CH 650V 69A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34.5A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
1+1330.59 грн
В кошику  од. на суму  грн.
STWA57N65M5 STWA57N65M5 STMicroelectronics en.DM00072252.pdf Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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LED5000PHR LED5000PHR STMicroelectronics en.DM00070687.pdf Description: IC LED DRIVER RGLTR PWM 3A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-HSOP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 48V
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+103.50 грн
5000+97.65 грн
7500+96.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LED5000PHR LED5000PHR STMicroelectronics en.DM00070687.pdf Description: IC LED DRIVER RGLTR PWM 3A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-HSOP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 48V
Part Status: Active
на замовлення 19525 шт:
термін постачання 21-31 дні (днів)
2+198.16 грн
10+141.93 грн
25+129.79 грн
100+109.25 грн
250+103.26 грн
500+99.64 грн
1000+95.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
M24C64-FCS6TP/K M24C64-FCS6TP/K STMicroelectronics en.CD00259166.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 5WLCSP
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.96x1.07)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 20409 шт:
термін постачання 21-31 дні (днів)
8+39.79 грн
10+35.94 грн
25+34.91 грн
50+32.09 грн
100+31.40 грн
250+30.46 грн
500+29.27 грн
1000+28.58 грн
Мінімальне замовлення: 8
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LIS2DHTR LIS2DHTR STMicroelectronics en.DM00042751.pdf Description: ACCEL 2-16G I2C/SPI 14LGA
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 672Hz
Supplier Device Package: 14-LGA (2x2)
Sensitivity (LSB/g): 1000 (±2g) ~ 83 (±16g)
Part Status: Obsolete
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TDA7265B TDA7265B STMicroelectronics en.DM00044452.pdf Description: IC AMP AB STER 30W MULTIWATT-11
Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
Packaging: Tube
Package / Case: Multiwatt-11 (Vertical, Bent and Staggered Leads)
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: ±8V ~ 33V
Max Output Power x Channels @ Load: 30W x 2 @ 8Ohm
Supplier Device Package: Multiwatt-11 (Vertical, Bent and Staggered Leads)
Part Status: Active
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
1+514.09 грн
10+381.41 грн
25+353.10 грн
100+302.11 грн
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TS9224IYPT TS9224IYPT STMicroelectronics en.CD00235458.pdf Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 900µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+103.24 грн
5000+97.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSV851IYLT TSV851IYLT STMicroelectronics en.DM00041869.pdf Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: SOT-23-5
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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LM158WDT LM158WDT STMicroelectronics en.CD00003160.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -55°C ~ 125°C
Current - Supply: 700µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
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LM258AWYDT LM258AWYDT STMicroelectronics en.CD00003160.pdf Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
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LM258AWYST LM258AWYST STMicroelectronics en.CD00003160.pdf Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
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STG3699ADWF STMicroelectronics Description: IC SWITCH SPDT X 4 450MOHM
Packaging: Tray
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 450mOhm
-3db Bandwidth: 50MHz
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 35pC
Crosstalk: -54dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 4
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STG5678BJR STMicroelectronics CD00190250.pdf Description: IC SWITCH DUAL SPDT FLIPCHIP12
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STULPI01ATBR STMicroelectronics en.CD00201527.pdf Description: IC TRANSCEIVER 1/1 36UTFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-TFBGA
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.5V
Number of Drivers/Receivers: 1/1
Protocol: USB
Supplier Device Package: 36-uTFBGA (3.6x3.6)
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STUSB06EHTR STMicroelectronics CD00219086.pdf Description: IC TXRX USB SGL CHIP BCC++16L
товару немає в наявності
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STA309A STA309A STMicroelectronics en.CD00169555.pdf Description: IC FULLY INTEG PROCESSOR 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Fully Integrated Processor
Interface: I2C, I2S
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Specifications: Direct Digital Amplification
Applications: Pre-Amplifier
Supplier Device Package: 64-TQFP (10x10)
Number of Channels: 8
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STDVE103ABTY STDVE103ABTY STMicroelectronics en.CD00204975.pdf Description: IC INTERFACE SPECIALIZED 64TQFP
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L4931ABD35-TRY L4931ABD35-TRY STMicroelectronics en.CD00000971.pdf Description: IC REG LINEAR 3.5V 250MA 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 73dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.82V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Qualification: AEC-Q100
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STEVAL-SPBT2ATV3 en.DM00056231.pdf
STEVAL-SPBT2ATV3
Виробник: STMicroelectronics
Description: BOARD EVAL FOR SPBT2532C2.AT2
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STEVAL-MKI129V2 audio-ic-eval-boards.html
STEVAL-MKI129V2
Виробник: STMicroelectronics
Description: BOARD EVAL FOR MP34DB01
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP34DB01
Supplied Contents: Board(s)
Primary Attributes: Digital Output
Part Status: Obsolete
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STEVAL-MKI129V1 en.DM00072699.pdf
STEVAL-MKI129V1
Виробник: STMicroelectronics
Description: BOARD EVAL FOR MP45DT02
Packaging: Bulk
Function: MEMS Omnidirectional Microphones
Type: Audio
Utilized IC / Part: MP45DT02
Supplied Contents: Board(s)
Primary Attributes: Digital Output
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STP105N3LL en.DM00071078.pdf
STP105N3LL
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 40A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.78 грн
50+64.31 грн
100+61.21 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STT6N3LLH6 en.DM00051684.pdf
STT6N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
на замовлення 6828 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+60.48 грн
10+39.39 грн
100+25.93 грн
500+18.68 грн
1000+16.86 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STT6N3LLH6 en.DM00051684.pdf
STT6N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 6A SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+16.09 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STH310N10F7-2 en.DM00072096.pdf
STH310N10F7-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+177.71 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STH310N10F7-2 en.DM00072096.pdf
STH310N10F7-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 6034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+387.56 грн
10+264.62 грн
100+197.55 грн
500+165.29 грн
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STTH30S06W 600v-ultrafast-rectifiers.html
STTH30S06W
Виробник: STMicroelectronics
Description: DIODE GEN PURP 600V 30A DO247-2
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 30 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
товару немає в наявності
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STU6N65K3 en.CD00297329.pdf
STU6N65K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
товару немає в наявності
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STW46NF30 en.DM00022942.pdf
STW46NF30
Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 17A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
на замовлення 626 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+350.16 грн
30+174.78 грн
120+145.69 грн
510+122.14 грн
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STWA45N65M5 en.DM00072250.pdf
STWA45N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 35A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
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STB24N60M2 en.DM00070788.pdf
STB24N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
товару немає в наявності
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STD80N4F6 en.DM00109418.pdf
STD80N4F6
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.84 грн
10+93.57 грн
100+69.59 грн
500+55.75 грн
1000+50.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGF30H60DF en.DM00040343.pdf
STGF30H60DF
Виробник: STMicroelectronics
Description: IGBT 600V 60A 37W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 37 W
товару немає в наявності
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STGP20H60DF en.DM00066598.pdf
STGP20H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42.5ns/177ns
Switching Energy: 209µJ (on), 261µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 115 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.79 грн
50+90.58 грн
100+81.47 грн
500+61.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP30H60DF en.DM00040343.pdf
STGP30H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/160ns
Switching Energy: 350µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 105 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
на замовлення 971 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+259.43 грн
50+125.54 грн
100+113.49 грн
500+86.67 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP35HF60W en.DM00069286.pdf
STGP35HF60W
Виробник: STMicroelectronics
Description: IGBT 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 30ns/175ns
Switching Energy: 290µJ (on), 185µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 200 W
товару немає в наявності
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STP240N10F7 en.DM00070204.pdf
STP240N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 8918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+299.22 грн
50+150.00 грн
100+136.61 грн
500+116.98 грн
Мінімальне замовлення: 2
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STP7N80K5 en.DM00060222.pdf
STP7N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
на замовлення 741 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.89 грн
50+100.37 грн
100+90.44 грн
500+68.51 грн
Мінімальне замовлення: 2
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STP9NM40N en.DM00067012.pdf
STP9NM40N
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 5.6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 50 V
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LET9070CB en.DM00067622.pdf
LET9070CB
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 28V M243
Packaging: Box
Package / Case: M243
Current Rating (Amps): 12A
Frequency: 945MHz
Power - Output: 80W
Gain: 16dB
Technology: LDMOS
Supplier Device Package: M243
Voltage - Rated: 80 V
Voltage - Test: 28 V
Current - Test: 400 mA
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STAC2933 en.DM00046494.pdf
STAC2933
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 400W
Gain: 23.5dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STAC2943 en.DM00046491.pdf
STAC2943
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 350W
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STAC4933 en.DM00046797.pdf
STAC4933
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC177B
Packaging: Box
Package / Case: STAC177B
Current Rating (Amps): 40A
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC177B
Part Status: Obsolete
Voltage - Rated: 200 V
Voltage - Test: 50 V
Current - Test: 250 mA
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STB24N60M2 en.DM00070788.pdf
STB24N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STD80N4F6 en.DM00109418.pdf
STD80N4F6
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+51.34 грн
5000+47.20 грн
Мінімальне замовлення: 2500
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STFI10N65K3 en.CD00235865.pdf
STFI10N65K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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STFI130N10F3 en.DM00022938.pdf
STFI130N10F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 46A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 23A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3305 pF @ 25 V
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STGF17NC60SD STGF17NC60SD_ds.pdf
STGF17NC60SD
Виробник: STMicroelectronics
Description: IGBT 600V 17A 32W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 12A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 17.5ns/175ns
Switching Energy: 135µJ (on), 815µJ (off)
Test Condition: 480V, 12A, 10Ohm, 15V
Gate Charge: 54.5 nC
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 32 W
на замовлення 388 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.83 грн
10+147.14 грн
100+117.14 грн
Мінімальне замовлення: 2
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STH310N10F7-6 en.DM00072096.pdf
STH310N10F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+192.79 грн
Мінімальне замовлення: 1000
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STH310N10F7-6 en.DM00072096.pdf
STH310N10F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-6
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+467.14 грн
10+309.75 грн
100+225.13 грн
500+176.38 грн
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STL22N65M5 en.DM00062074.pdf
STL22N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
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STL36N55M5 en.DM00044786.pdf
STL36N55M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 22.5A 4PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
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STL42N65M5 STL42N65M5.pdf
STL42N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 4A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
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STF7N80K5 stf7n80k5.pdf
STF7N80K5
Виробник: STMicroelectronics
Description: MOSFET N CH 800V 6A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 100 V
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STFI24N60M2 en.DM00071944.pdf
STFI24N60M2
Виробник: STMicroelectronics
Description: MOSFET N CH 600V 18A TO281
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
товару немає в наявності
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STFI6N65K3 en.CD00297329.pdf
STFI6N65K3
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 5.4A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 50 V
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STL22N65M5 en.DM00062074.pdf
STL22N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 15A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1345 pF @ 100 V
товару немає в наявності
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STL36N55M5 en.DM00044786.pdf
STL36N55M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 22.5A 4PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 100 V
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STL42N65M5 STL42N65M5.pdf
STL42N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 4A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
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STW78N65M5 en.DM00060366.pdf
STW78N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 69A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34.5A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 49 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1330.59 грн
В кошику  од. на суму  грн.
STWA57N65M5 en.DM00072252.pdf
STWA57N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
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LED5000PHR en.DM00070687.pdf
LED5000PHR
Виробник: STMicroelectronics
Description: IC LED DRIVER RGLTR PWM 3A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-HSOP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 48V
Part Status: Active
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+103.50 грн
5000+97.65 грн
7500+96.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
LED5000PHR en.DM00070687.pdf
LED5000PHR
Виробник: STMicroelectronics
Description: IC LED DRIVER RGLTR PWM 3A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 3A
Internal Switch(s): Yes
Topology: Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 8-HSOP
Dimming: PWM
Voltage - Supply (Min): 5.5V
Voltage - Supply (Max): 48V
Part Status: Active
на замовлення 19525 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.16 грн
10+141.93 грн
25+129.79 грн
100+109.25 грн
250+103.26 грн
500+99.64 грн
1000+95.09 грн
Мінімальне замовлення: 2
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M24C64-FCS6TP/K en.CD00259166.pdf
M24C64-FCS6TP/K
Виробник: STMicroelectronics
Description: IC EEPROM 64KBIT I2C 1MHZ 5WLCSP
Packaging: Cut Tape (CT)
Package / Case: 5-UFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 5-WLCSP (0.96x1.07)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
на замовлення 20409 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.79 грн
10+35.94 грн
25+34.91 грн
50+32.09 грн
100+31.40 грн
250+30.46 грн
500+29.27 грн
1000+28.58 грн
Мінімальне замовлення: 8
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LIS2DHTR en.DM00042751.pdf
LIS2DHTR
Виробник: STMicroelectronics
Description: ACCEL 2-16G I2C/SPI 14LGA
Features: Adjustable Bandwidth, Selectable Scale, Sleep Mode, Temperature Sensor
Packaging: Tape & Reel (TR)
Package / Case: 14-VFLGA
Output Type: I2C, SPI
Mounting Type: Surface Mount
Type: Digital
Axis: X, Y, Z
Acceleration Range: ±2g, 4g, 8g, 16g
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 3.6V
Bandwidth: 0.5Hz ~ 672Hz
Supplier Device Package: 14-LGA (2x2)
Sensitivity (LSB/g): 1000 (±2g) ~ 83 (±16g)
Part Status: Obsolete
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TDA7265B en.DM00044452.pdf
TDA7265B
Виробник: STMicroelectronics
Description: IC AMP AB STER 30W MULTIWATT-11
Features: Depop, Mute, Short-Circuit and Thermal Protection, Standby
Packaging: Tube
Package / Case: Multiwatt-11 (Vertical, Bent and Staggered Leads)
Output Type: 2-Channel (Stereo)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -20°C ~ 85°C (TA)
Voltage - Supply: ±8V ~ 33V
Max Output Power x Channels @ Load: 30W x 2 @ 8Ohm
Supplier Device Package: Multiwatt-11 (Vertical, Bent and Staggered Leads)
Part Status: Active
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+514.09 грн
10+381.41 грн
25+353.10 грн
100+302.11 грн
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TS9224IYPT en.CD00235458.pdf
TS9224IYPT
Виробник: STMicroelectronics
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 900µA
Slew Rate: 1.3V/µs
Gain Bandwidth Product: 4 MHz
Current - Input Bias: 15 nA
Voltage - Input Offset: 500 µV
Supplier Device Package: 14-TSSOP
Grade: Automotive
Part Status: Active
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 2.7 V
Voltage - Supply Span (Max): 12 V
Qualification: AEC-Q100
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+103.24 грн
5000+97.42 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSV851IYLT en.DM00041869.pdf
TSV851IYLT
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 130µA
Slew Rate: 0.7V/µs
Gain Bandwidth Product: 1.3 MHz
Current - Input Bias: 27 nA
Voltage - Input Offset: 4 mV
Supplier Device Package: SOT-23-5
Grade: Automotive
Number of Circuits: 1
Current - Output / Channel: 70 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Qualification: AEC-Q100
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LM158WDT en.CD00003160.pdf
LM158WDT
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -55°C ~ 125°C
Current - Supply: 700µA
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
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LM258AWYDT en.CD00003160.pdf
LM258AWYDT
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
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LM258AWYST en.CD00003160.pdf
LM258AWYST
Виробник: STMicroelectronics
Description: IC OPAMP GP 2 CIRCUIT 8MINISO
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Current - Supply: 700µA (x2 Channels)
Slew Rate: 0.6V/µs
Gain Bandwidth Product: 1.1 MHz
Current - Input Bias: 20 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MiniSO
Grade: Automotive
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 30 V
Qualification: AEC-Q100
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STG3699ADWF
Виробник: STMicroelectronics
Description: IC SWITCH SPDT X 4 450MOHM
Packaging: Tray
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 450mOhm
-3db Bandwidth: 50MHz
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 35pC
Crosstalk: -54dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm
Switch Time (Ton, Toff) (Max): 55ns, 30ns
Channel Capacitance (CS(off), CD(off)): 5pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 4
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STG5678BJR CD00190250.pdf
Виробник: STMicroelectronics
Description: IC SWITCH DUAL SPDT FLIPCHIP12
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STULPI01ATBR en.CD00201527.pdf
Виробник: STMicroelectronics
Description: IC TRANSCEIVER 1/1 36UTFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-TFBGA
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.5V
Number of Drivers/Receivers: 1/1
Protocol: USB
Supplier Device Package: 36-uTFBGA (3.6x3.6)
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STUSB06EHTR CD00219086.pdf
Виробник: STMicroelectronics
Description: IC TXRX USB SGL CHIP BCC++16L
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STA309A en.CD00169555.pdf
STA309A
Виробник: STMicroelectronics
Description: IC FULLY INTEG PROCESSOR 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Fully Integrated Processor
Interface: I2C, I2S
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Specifications: Direct Digital Amplification
Applications: Pre-Amplifier
Supplier Device Package: 64-TQFP (10x10)
Number of Channels: 8
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STDVE103ABTY en.CD00204975.pdf
STDVE103ABTY
Виробник: STMicroelectronics
Description: IC INTERFACE SPECIALIZED 64TQFP
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L4931ABD35-TRY en.CD00000971.pdf
L4931ABD35-TRY
Виробник: STMicroelectronics
Description: IC REG LINEAR 3.5V 250MA 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 73dB ~ 55dB (120Hz ~ 10kHz)
Voltage Dropout (Max): 0.82V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 6 mA
Qualification: AEC-Q100
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