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STH110N10F7-6 STH110N10F7-6 STMicroelectronics STH110N10F7-2%2C-6.pdf Description: MOSFET N-CH 100V 110A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
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STH320N4F6-6 STH320N4F6-6 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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STL12P6F6 STL12P6F6 STMicroelectronics stl12p6f6.pdf Description: MOSFET P-CH 60V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+24.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STPS140ZY STPS140ZY STMicroelectronics en.DM00068605.pdf Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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STR1550 STR1550 STMicroelectronics en.DM00040355.pdf Description: TRANS NPN 500V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+9.74 грн
6000+8.56 грн
9000+8.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2550 STR2550 STMicroelectronics en.DM00040356.pdf Description: TRANS PNP 500V 0.5A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+11.19 грн
6000+9.85 грн
9000+9.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF100N10F7 STF100N10F7 STMicroelectronics en.DM00066568.pdf Description: MOSFET N CH 100V 45A TO-220FP
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
2+182.63 грн
50+80.55 грн
100+79.87 грн
500+71.21 грн
1000+65.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10P6F6 STF10P6F6 STMicroelectronics en.DM00051198.pdf Description: MOSFET P-CH 60V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STF13N60M2 STF13N60M2 STMicroelectronics en.DM00070271.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 1672 шт:
термін постачання 21-31 дні (днів)
3+137.17 грн
50+63.52 грн
100+56.81 грн
500+42.27 грн
1000+38.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGWT60V60DF STGWT60V60DF STMicroelectronics en.DM00074810.pdf Description: IGBT TRENCH FIELD STOP 600V 80A
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
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STI10NM60N STI10NM60N STMicroelectronics std10nm60n.pdf Description: MOSFET N-CH 600V 10A I2PAK
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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STP13N60M2 STP13N60M2 STMicroelectronics stp13n60m2.pdf Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 586 шт:
термін постачання 21-31 дні (днів)
2+166.17 грн
50+77.74 грн
100+69.77 грн
500+52.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP9N60M2 STP9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
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STAC3933 STAC3933 STMicroelectronics en.DM00046798.pdf Description: IC TRANS RF HV/VHF/UHF STAC177B
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)
4+99.54 грн
10+70.35 грн
25+63.82 грн
100+53.17 грн
250+49.96 грн
500+48.03 грн
1000+45.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 18145 шт:
термін постачання 21-31 дні (днів)
2+171.66 грн
10+122.88 грн
25+112.34 грн
100+94.47 грн
250+89.26 грн
500+87.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
2+224.95 грн
10+194.73 грн
25+184.11 грн
100+149.74 грн
250+142.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
2+157.55 грн
10+112.54 грн
25+102.62 грн
100+86.04 грн
250+81.14 грн
500+78.19 грн
1000+74.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
товару немає в наявності
В кошику  од. на суму  грн.
ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 6935 шт:
термін постачання 21-31 дні (днів)
3+141.87 грн
10+100.99 грн
25+92.08 грн
100+77.20 грн
250+72.81 грн
500+70.16 грн
1000+66.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 2623 шт:
термін постачання 21-31 дні (днів)
3+139.52 грн
10+99.18 грн
25+90.42 грн
100+75.81 грн
250+71.49 грн
500+68.89 грн
1000+65.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
1+354.28 грн
10+226.74 грн
100+162.04 грн
В кошику  од. на суму  грн.
STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)
1+532.99 грн
10+346.52 грн
100+252.37 грн
500+199.21 грн
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STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 5793 шт:
термін постачання 21-31 дні (днів)
3+123.06 грн
10+75.25 грн
100+50.43 грн
500+37.34 грн
1000+34.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 9412 шт:
термін постачання 21-31 дні (днів)
1+370.74 грн
10+237.38 грн
100+169.59 грн
500+142.25 грн
В кошику  од. на суму  грн.
STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)
3+111.30 грн
10+67.70 грн
100+45.32 грн
500+33.51 грн
1000+30.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
1+384.85 грн
10+246.89 грн
100+176.64 грн
В кошику  од. на суму  грн.
STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
1+369.96 грн
10+237.23 грн
100+169.31 грн
500+141.58 грн
В кошику  од. на суму  грн.
STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
товару немає в наявності
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STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
1+432.67 грн
10+278.89 грн
100+201.01 грн
500+174.30 грн
В кошику  од. на суму  грн.
STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
2+190.47 грн
10+118.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+444.42 грн
10+288.63 грн
100+211.98 грн
В кошику  од. на суму  грн.
STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 14477 шт:
термін постачання 21-31 дні (днів)
3+153.63 грн
10+94.80 грн
100+64.14 грн
500+47.88 грн
1000+43.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Part Status: Active
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.2V
Voltage - Supply (Max): 5.4V
Fault Protection: Over Current, Over Temperature, Short Circuit
Charge Current - Max: 220mA
Supplier Device Package: 12-DFN (3x3)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 6512 шт:
термін постачання 21-31 дні (днів)
3+145.79 грн
10+103.18 грн
25+93.99 грн
100+78.68 грн
250+74.15 грн
500+71.41 грн
1000+68.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
на замовлення 58085 шт:
термін постачання 21-31 дні (днів)
3+112.09 грн
10+68.61 грн
100+45.89 грн
500+33.92 грн
1000+30.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
L6751TR L6751TR STMicroelectronics L6751_ds.pdf Description: IC REG CTRLR DDR 2OUT 72WPLGA
Supplier Device Package: 72-WPLGA (6x6)
Applications: Controller, DDR, Intel VR12, AMD SVI
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 72-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
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L6758ATR L6758ATR STMicroelectronics L6758A.pdf Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Supplier Device Package: 48-VFQFPN (6x6)
Applications: Controller, Intel VR12
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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LD1086PUR LD1086PUR STMicroelectronics en.CD00001884.pdf Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
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LED2001PUR LED2001PUR STMicroelectronics en.DM00079085.pdf Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
4500+87.83 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
LNBH29EQTR LNBH29EQTR STMicroelectronics en.DM00052416.pdf Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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PM8834MTR PM8834MTR STMicroelectronics en.CD00212712.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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PM8903ATR PM8903ATR STMicroelectronics en.DM00074624.pdf Description: IC REG BUCK ADJ 3A 16VFQFPN
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ST1S41PHR ST1S41PHR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+72.68 грн
5000+68.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ST1S41PUR ST1S41PUR STMicroelectronics en.DM00064431.pdf Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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STB13N80K5 STB13N80K5 STMicroelectronics en.DM00079143.pdf Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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STB36NM60ND STB36NM60ND STMicroelectronics STx36NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A D2PAK
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
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STD13N60M2 STD13N60M2 STMicroelectronics en.DM00082928.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+33.92 грн
5000+30.37 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD13NM60ND STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+128.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD9N60M2 STD9N60M2 STMicroelectronics en.DM00080324.pdf Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+30.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STH270N8F7-2 STH270N8F7-2 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
товару немає в наявності
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STH270N8F7-6 STH270N8F7-6 STMicroelectronics en.DM00071594.pdf Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+136.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STH320N4F6-2 STH320N4F6-2 STMicroelectronics en.DM00076403.pdf Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STH3N150-2 STH3N150-2 STMicroelectronics en.CD00149569.pdf Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+163.19 грн
2000+151.74 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STL110N10F7 STL110N10F7 STMicroelectronics en.DM00071579.pdf Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STL38N65M5 STL38N65M5 STMicroelectronics en.DM00056210.pdf Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+179.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STL60N10F7 STL60N10F7 STMicroelectronics en.DM00081178.pdf Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+43.03 грн
6000+39.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STNS01PUR STNS01PUR STMicroelectronics en.DM00085223.pdf Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+73.46 грн
6000+69.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2N2VH5 STR2N2VH5 STMicroelectronics en.DM00068028.pdf Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
3000+27.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF13NM60ND STF13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
1+344.09 грн
50+172.59 грн
100+157.25 грн
500+141.82 грн
В кошику  од. на суму  грн.
STF18NM60ND STF18NM60ND STMicroelectronics en.DM00085221.pdf Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
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STH110N10F7-6 STH110N10F7-2%2C-6.pdf
STH110N10F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 110A H2PAK-6
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2PAK-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
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STH320N4F6-6 en.DM00076403.pdf
STH320N4F6-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK-6
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
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STL12P6F6 stl12p6f6.pdf
STL12P6F6
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+24.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STPS140ZY en.DM00068605.pdf
STPS140ZY
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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STR1550 en.DM00040355.pdf
STR1550
Виробник: STMicroelectronics
Description: TRANS NPN 500V 0.5A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 500 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.74 грн
6000+8.56 грн
9000+8.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2550 en.DM00040356.pdf
STR2550
Виробник: STMicroelectronics
Description: TRANS PNP 500V 0.5A SOT-23-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.19 грн
6000+9.85 грн
9000+9.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF100N10F7 en.DM00066568.pdf
STF100N10F7
Виробник: STMicroelectronics
Description: MOSFET N CH 100V 45A TO-220FP
Rds On (Max) @ Id, Vgs: 8mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 30W (Tc)
на замовлення 1461 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.63 грн
50+80.55 грн
100+79.87 грн
500+71.21 грн
1000+65.86 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10P6F6 en.DM00051198.pdf
STF10P6F6
Виробник: STMicroelectronics
Description: MOSFET P-CH 60V 10A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
товару немає в наявності
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STF13N60M2 en.DM00070271.pdf
STF13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 1672 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.17 грн
50+63.52 грн
100+56.81 грн
500+42.27 грн
1000+38.72 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGWT60V60DF en.DM00074810.pdf
STGWT60V60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FIELD STOP 600V 80A
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/208ns
Switching Energy: 750µJ (on), 550µJ (off)
Test Condition: 400V, 60A, 4.7Ohm, 15V
Gate Charge: 334 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 375 W
товару немає в наявності
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STI10NM60N std10nm60n.pdf
STI10NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A I2PAK
Part Status: Obsolete
Supplier Device Package: TO-262 (I2PAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
товару немає в наявності
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STP13N60M2 stp13n60m2.pdf
STP13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 586 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+166.17 грн
50+77.74 грн
100+69.77 грн
500+52.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP9N60M2 en.DM00080324.pdf
STP9N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
товару немає в наявності
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STAC3933 en.DM00046798.pdf
STAC3933
Виробник: STMicroelectronics
Description: IC TRANS RF HV/VHF/UHF STAC177B
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
LD1086PUR en.CD00001884.pdf
LD1086PUR
Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
на замовлення 1082 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.54 грн
10+70.35 грн
25+63.82 грн
100+53.17 грн
250+49.96 грн
500+48.03 грн
1000+45.67 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
LED2001PUR en.DM00079085.pdf
LED2001PUR
Виробник: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 18145 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+171.66 грн
10+122.88 грн
25+112.34 грн
100+94.47 грн
250+89.26 грн
500+87.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Виробник: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 416 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+224.95 грн
10+194.73 грн
25+184.11 грн
100+149.74 грн
250+142.06 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8834MTR en.CD00212712.pdf
PM8834MTR
Виробник: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
на замовлення 3640 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+157.55 грн
10+112.54 грн
25+102.62 грн
100+86.04 грн
250+81.14 грн
500+78.19 грн
1000+74.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM8903ATR en.DM00074624.pdf
PM8903ATR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
товару немає в наявності
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ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 6935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+141.87 грн
10+100.99 грн
25+92.08 грн
100+77.20 грн
250+72.81 грн
500+70.16 грн
1000+66.86 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
на замовлення 2623 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.52 грн
10+99.18 грн
25+90.42 грн
100+75.81 грн
250+71.49 грн
500+68.89 грн
1000+65.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STB13N80K5 en.DM00079143.pdf
STB13N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
на замовлення 474 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+354.28 грн
10+226.74 грн
100+162.04 грн
В кошику  од. на суму  грн.
STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+532.99 грн
10+346.52 грн
100+252.37 грн
500+199.21 грн
В кошику  од. на суму  грн.
STD13N60M2 en.DM00082928.pdf
STD13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 5793 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.06 грн
10+75.25 грн
100+50.43 грн
500+37.34 грн
1000+34.13 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 9412 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+370.74 грн
10+237.38 грн
100+169.59 грн
500+142.25 грн
В кошику  од. на суму  грн.
STD9N60M2 en.DM00080324.pdf
STD9N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.30 грн
10+67.70 грн
100+45.32 грн
500+33.51 грн
1000+30.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+384.85 грн
10+246.89 грн
100+176.64 грн
В кошику  од. на суму  грн.
STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 2360 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+369.96 грн
10+237.23 грн
100+169.31 грн
500+141.58 грн
В кошику  од. на суму  грн.
STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
STH3N150-2 en.CD00149569.pdf
STH3N150-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+432.67 грн
10+278.89 грн
100+201.01 грн
500+174.30 грн
В кошику  од. на суму  грн.
STL110N10F7 en.DM00071579.pdf
STL110N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.47 грн
10+118.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL38N65M5 en.DM00056210.pdf
STL38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+444.42 грн
10+288.63 грн
100+211.98 грн
В кошику  од. на суму  грн.
STL60N10F7 en.DM00081178.pdf
STL60N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): 20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerFlat™ (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 14477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.63 грн
10+94.80 грн
100+64.14 грн
500+47.88 грн
1000+43.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STNS01PUR en.DM00085223.pdf
STNS01PUR
Виробник: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Part Status: Active
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.2V
Voltage - Supply (Max): 5.4V
Fault Protection: Over Current, Over Temperature, Short Circuit
Charge Current - Max: 220mA
Supplier Device Package: 12-DFN (3x3)
Battery Chemistry: Lithium Ion
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 12-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 6512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+145.79 грн
10+103.18 грн
25+93.99 грн
100+78.68 грн
250+74.15 грн
500+71.41 грн
1000+68.03 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Power Dissipation (Max): 350mW (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
на замовлення 58085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.09 грн
10+68.61 грн
100+45.89 грн
500+33.92 грн
1000+30.97 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
L6751TR L6751_ds.pdf
L6751TR
Виробник: STMicroelectronics
Description: IC REG CTRLR DDR 2OUT 72WPLGA
Supplier Device Package: 72-WPLGA (6x6)
Applications: Controller, DDR, Intel VR12, AMD SVI
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 72-WFLGA Exposed Pad
Packaging: Tape & Reel (TR)
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L6758ATR L6758A.pdf
L6758ATR
Виробник: STMicroelectronics
Description: IC REG CTRLR VR12 2OUT 48VFQFPN
Supplier Device Package: 48-VFQFPN (6x6)
Applications: Controller, Intel VR12
Operating Temperature: 0°C ~ 70°C
Voltage - Input: 10.8V ~ 13.2V
Number of Outputs: 2
Mounting Type: Surface Mount
Voltage - Output: 0.25V ~ 1.52V
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
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LD1086PUR en.CD00001884.pdf
LD1086PUR
Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 1.5A
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 30V
Number of Regulators: 1
Voltage - Output (Max): 28.5V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 88dB (120Hz)
Voltage Dropout (Max): 1.5V @ 1.5A
Protection Features: Over Current, Over Temperature
товару немає в наявності
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LED2001PUR en.DM00079085.pdf
LED2001PUR
Виробник: STMicroelectronics
Description: IC LED DRVR RGLTR PWM 4A 8VFQFPN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 850kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 4A
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 8-VFQFPN (4x4)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 18V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+87.83 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
LNBH29EQTR en.DM00052416.pdf
LNBH29EQTR
Виробник: STMicroelectronics
Description: IC LNB CTRL STEP-UP I2C 16QFN
Supplier Device Package: 16-QFN (3x3)
Current - Supply: 10mA
Applications: Low-Noise Block (LNB) Down-Converter
Voltage - Supply: 8V ~ 17.5V
Operating Temperature: 0°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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PM8834MTR en.CD00212712.pdf
PM8834MTR
Виробник: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE 8MSOP
Part Status: Active
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 35ns
Supplier Device Package: 8-MSOP-EP
Input Type: Non-Inverting
Voltage - Supply: 5V ~ 18V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
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PM8903ATR en.DM00074624.pdf
PM8903ATR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 3A 16VFQFPN
товару немає в наявності
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ST1S41PHR en.DM00064431.pdf
ST1S41PHR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8HSOP
Part Status: Active
Voltage - Output (Min/Fixed): 0.8V
Voltage - Input (Min): 4V
Voltage - Output (Max): 18V
Synchronous Rectifier: Yes
Supplier Device Package: 8-HSOP
Topology: Buck
Voltage - Input (Max): 18V
Frequency - Switching: 850kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+72.68 грн
5000+68.51 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ST1S41PUR en.DM00064431.pdf
ST1S41PUR
Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 850kHz
Voltage - Input (Max): 18V
Topology: Buck
Supplier Device Package: 8-DFN (4x4)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18V
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 0.8V
Part Status: Active
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STB13N80K5 en.DM00079143.pdf
STB13N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
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STB36NM60ND STx36NM60ND_DS.pdf
STB36NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A D2PAK
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Last Time Buy
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 190W (Tc)
товару немає в наявності
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STD13N60M2 en.DM00082928.pdf
STD13N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+33.92 грн
5000+30.37 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD13NM60ND STx13NM60ND_DS.pdf
STD13NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+128.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD9N60M2 en.DM00080324.pdf
STD9N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.39 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STH270N8F7-2 en.DM00071594.pdf
STH270N8F7-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
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STH270N8F7-6 en.DM00071594.pdf
STH270N8F7-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+136.08 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STH320N4F6-2 en.DM00076403.pdf
STH320N4F6-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 200A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13800 pF @ 15 V
Qualification: AEC-Q101
товару немає в наявності
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STH3N150-2 en.CD00149569.pdf
STH3N150-2
Виробник: STMicroelectronics
Description: MOSFET N-CH 1500V 2.5A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 1.3A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: H2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1500 V
Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 939 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+163.19 грн
2000+151.74 грн
Мінімальне замовлення: 1000
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STL110N10F7 en.DM00071579.pdf
STL110N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 107A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
товару немає в наявності
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STL38N65M5 en.DM00056210.pdf
STL38N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+179.85 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STL60N10F7 en.DM00081178.pdf
STL60N10F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 46A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6A, 10V
Power Dissipation (Max): 5W (Ta), 72W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+43.03 грн
6000+39.43 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STNS01PUR en.DM00085223.pdf
STNS01PUR
Виробник: STMicroelectronics
Description: IC BATT CHG LI-ION 1CELL 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-WFDFN Exposed Pad
Number of Cells: 1
Mounting Type: Surface Mount
Interface: USB
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion
Supplier Device Package: 12-DFN (3x3)
Charge Current - Max: 220mA
Fault Protection: Over Current, Over Temperature, Short Circuit
Voltage - Supply (Max): 5.4V
Battery Pack Voltage: 4.2V
Current - Charging: Constant - Programmable
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+73.46 грн
6000+69.29 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STR2N2VH5 en.DM00068028.pdf
STR2N2VH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 20V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 2A, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 367 pF @ 16 V
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+27.49 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
STF13NM60ND STx13NM60ND_DS.pdf
STF13NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 50 V
на замовлення 603 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+344.09 грн
50+172.59 грн
100+157.25 грн
500+141.82 грн
В кошику  од. на суму  грн.
STF18NM60ND en.DM00085221.pdf
STF18NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 13A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
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