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STFU13N60M2 STMicroelectronics stfu13n60m2.pdf Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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STFU18N60M2 STMicroelectronics stfu18n60m2.pdf Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
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STFW12N120K5 STFW12N120K5 STMicroelectronics en.DM00117846.pdf Description: MOSFET N-CH 1200V 12A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
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STFW20N65M5 STFW20N65M5 STMicroelectronics en.DM00076416.pdf Description: MOSFET N-CH 650V 18A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
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STFW24NM60N STMicroelectronics Description: MOSFET N-CH 600V TO-3PH
Packaging: Tube
Part Status: Active
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STGF30M65DF2 STGF30M65DF2 STMicroelectronics en.DM00157912.pdf Description: IGBT TRENCH FS 650V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 38 W
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
2+212.27 грн
50+101.46 грн
100+91.47 грн
500+69.39 грн
Мінімальне замовлення: 2
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STGF6M65DF2 STGF6M65DF2 STMicroelectronics en.DM00248773.pdf Description: IGBT TRENCH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 24.2 W
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
3+115.57 грн
10+91.30 грн
Мінімальне замовлення: 3
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STGIPN3H60-E STMicroelectronics STGIPN3H60-E.pdf Description: PWR MODULE 600V 3A 26-POWERDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1000Vrms
Part Status: Active
Current: 3 A
Voltage: 600 V
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STGIPQ3H60T-HLS STMicroelectronics en.DM00213902.pdf Description: PWR MODULE 600V 3A 26DIP
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STGP20M65DF2 STGP20M65DF2 STMicroelectronics en.DM00245294.pdf Description: IGBT TRENCH FS 650V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
на замовлення 631 шт:
термін постачання 21-31 дні (днів)
2+202.83 грн
50+96.92 грн
100+87.31 грн
500+66.15 грн
Мінімальне замовлення: 2
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STGWA20M65DF2 STGWA20M65DF2 STMicroelectronics en.DM00245493.pdf Description: IGBT TRENCH 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
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STGWA40H60DLFB STGWA40H60DLFB STMicroelectronics Description: IGBT TRENCH 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 7V, 40A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
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STP110N7F6 STMicroelectronics Description: MOSFET N-CHANNEL 68V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
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STP130N8F7 STP130N8F7 STMicroelectronics Description: MOSFET N-CHANNEL 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 205W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
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STP140N4F6 STP140N4F6 STMicroelectronics STP140N4F6_Rev1_Aug2015.pdf Description: MOSFET N-CHANNEL 40V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 168W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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STP14N80K5 STP14N80K5 STMicroelectronics STP14N80K5.pdf Description: MOSFET N-CHANNEL 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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STP17N80K5 STP17N80K5 STMicroelectronics en.DM00173138.pdf Description: MOSFET N-CHANNEL 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 100 V
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STP180N4F6 STP180N4F6 STMicroelectronics stp180n4f6.pdf Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 190W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 566 шт:
термін постачання 21-31 дні (днів)
3+142.30 грн
50+72.89 грн
100+66.18 грн
500+50.88 грн
Мінімальне замовлення: 3
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STP20N60M2-EP STP20N60M2-EP STMicroelectronics stp20n60m2-ep.pdf Description: MOSFET N-CHANNEL 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 110W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STP26N60M2 STP26N60M2 STMicroelectronics en.DM00218389.pdf Description: MOSFET N-CHANNEL 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STP3LN80K5 STP3LN80K5 STMicroelectronics en.DM00175102.pdf Description: MOSFET N-CHANNEL 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
3+124.22 грн
50+63.50 грн
100+58.76 грн
500+43.75 грн
Мінімальне замовлення: 3
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STP4LN80K5 STP4LN80K5 STMicroelectronics en.DM00180753.pdf Description: MOSFET N-CHANNEL 800V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V
на замовлення 764 шт:
термін постачання 21-31 дні (днів)
3+150.95 грн
50+70.57 грн
100+63.27 грн
500+47.38 грн
Мінімальне замовлення: 3
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STP78NF55-08 STMicroelectronics en.DM00312727.pdf Description: MOSFET N-CH 550V TO-220
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STP9N80K5 STP9N80K5 STMicroelectronics en.DM00236495.pdf Description: MOSFET N-CHANNEL 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STPA001AH STPA001AH STMicroelectronics en.DM00052126.pdf Description: IC AMP AB QUAD 50W 27FLEXIWATT
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STPA002OD-4WX STPA002OD-4WX STMicroelectronics en.DM00079491.pdf Description: IC AMP AB QUAD 85W 25FLEXIWATT
Packaging: Tube
Features: Mute, Standby
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
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STPA003HSD-48X STPA003HSD-48X STMicroelectronics en.DM00125748.pdf Description: IC AMP AB QUAD 85W 27FLEXIWATT
Packaging: Tube
Features: Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
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STPA008-48X STPA008-48X STMicroelectronics en.DM00185962.pdf Description: IC AMP AB QUAD 50W 27FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Grade: Automotive
Qualification: AEC-Q100
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STPA008-4WX STPA008-4WX STMicroelectronics en.DM00185962.pdf Description: IC AMP AB QUAD 50W 25FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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STPS2045CH STPS2045CH STMicroelectronics en.DM00052137.pdf Description: DIODE ARRAY SCHOTT 45V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: IPAK (TO-251)
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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STPS20L60CTN STPS20L60CTN STMicroelectronics en.CD00001710.pdf Description: DIODE ARR SCHOTT 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
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STPS4045CWY STPS4045CWY STMicroelectronics en.CD00285026.pdf Description: DIODE ARR SCHOTT 45V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 883 шт:
термін постачання 21-31 дні (днів)
2+197.33 грн
10+122.64 грн
100+84.29 грн
500+63.71 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPSC20065D STPSC20065D STMicroelectronics en.DM00288636.pdf Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
1+412.74 грн
10+333.48 грн
100+269.76 грн
500+225.03 грн
В кошику  од. на суму  грн.
STPSC20065DI STPSC20065DI STMicroelectronics en.DM00288636.pdf Description: DIODE SIC 650V 20A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 1179 шт:
термін постачання 21-31 дні (днів)
1+442.62 грн
50+226.78 грн
100+207.59 грн
500+163.28 грн
1000+160.45 грн
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STPSC20065W STPSC20065W STMicroelectronics en.DM00288636.pdf Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
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STPSC20065WY STPSC20065WY STMicroelectronics en.DM00288933.pdf Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
1+559.76 грн
30+287.18 грн
120+252.02 грн
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STPSC40065CWY STPSC40065CWY STMicroelectronics en.DM00289060.pdf Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
1+916.68 грн
10+615.56 грн
100+464.74 грн
В кошику  од. на суму  грн.
STTH20P035FP STMicroelectronics Description: DIODE GEN PURP 350V 20A TO220FP
Packaging: Tube
Part Status: Active
товару немає в наявності
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STTH30AC06FP STTH30AC06FP STMicroelectronics STTH30AC06_Rev.Feb.23%2C2018_DS.pdf Description: DIODE STD 600V 30A TO220FPAC
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)
2+164.31 грн
50+76.86 грн
100+68.95 грн
500+51.69 грн
1000+47.51 грн
Мінімальне замовлення: 2
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STU3LN80K5 STU3LN80K5 STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CHANNEL 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)
7+51.10 грн
75+32.87 грн
150+31.55 грн
525+28.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STW20N60M2-EP STMicroelectronics Description: MOSFET N-CHANNEL 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V
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STW26N60M2 STW26N60M2 STMicroelectronics en.DM00218389.pdf Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
на замовлення 309 шт:
термін постачання 21-31 дні (днів)
2+295.60 грн
10+187.14 грн
100+131.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STW30N80K5 STW30N80K5 STMicroelectronics en.DM00246893.pdf Description: MOSFET N-CH 800V 24A TO247-3
товару немає в наявності
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STW38N65M5-4 STW38N65M5-4 STMicroelectronics en.DM00288438.pdf Description: MOSFET N-CH 650V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
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STW70N65M2 STW70N65M2 STMicroelectronics en.DM00267729.pdf Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
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STW9N80K5 STW9N80K5 STMicroelectronics en.DM00236495.pdf Description: MOSFET N-CHANNEL 800V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STWA70N60DM2 STWA70N60DM2 STMicroelectronics STWA70N60DM2.pdf Description: MOSFET N-CHANNEL 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
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T2035H-6G T2035H-6G STMicroelectronics en.CD00161297.pdf Description: TRIAC ALTERNISTOR 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 20 A
Voltage - Off State: 600 V
на замовлення 319 шт:
термін постачання 21-31 дні (днів)
3+142.30 грн
50+66.32 грн
100+59.43 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T435T-600FP T435T-600FP STMicroelectronics en.CD00276756.pdf Description: TRIAC ALTRNSTR 600V 4A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 32A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
на замовлення 1401 шт:
термін постачання 21-31 дні (днів)
4+78.62 грн
10+47.24 грн
100+31.05 грн
500+22.60 грн
1000+20.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
T835-800B T835-800B STMicroelectronics en.CD00002266.pdf Description: TRIAC ALTERNISTOR 800V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 5039 шт:
термін постачання 21-31 дні (днів)
4+102.99 грн
75+43.84 грн
150+39.20 грн
525+30.59 грн
1050+27.90 грн
2025+25.75 грн
5025+22.92 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TDA7387EP TDA7387EP STMicroelectronics en.DM00073039.pdf Description: IC AMP AB QUAD 41W 25FLEXIWATT
Packaging: Tube
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Type: Class AB
Operating Temperature: -30°C ~ 85°C
Max Output Power x Channels @ Load: 41W x 4 @ 4Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
Part Status: Active
Mounting Type: Through Hole
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TDA75612EP-HLX STMicroelectronics en.DM00102150.pdf Description: IC AMP AB AUDIO BTL FLEXIWATT
Packaging: Tube
Part Status: Active
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TDA75616EP-HLX STMicroelectronics en.DM00102159.pdf Description: IC AMP AUD QUAD BTL FLEXIWATT
Packaging: Tube
Part Status: Active
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TDA7850AEP STMicroelectronics en.SGAUDIOPOW0315.pdf Description: IC AMP QUAD BRIDGE FLEXIWATT25
Packaging: Tube
Part Status: Active
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TN1215-800B-TR TN1215-800B-TR STMicroelectronics en.CD00002269.pdf Description: SCR 800V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A, 115A
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
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TN1215-800H TN1215-800H STMicroelectronics en.CD00002269.pdf Description: SCR 800V 12A IPAK (TO-251)
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A, 115A
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
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TYN1212RG TYN1212RG STMicroelectronics en.DM00043172.pdf Description: SCR 1.2KV 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 1.2 kV
товару немає в наявності
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VIPER012HS VIPER012HS STMicroelectronics en.DM00255197.pdf Description: IC OFFLINE SW MULT TOP 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 4.5V ~ 30V
Supplier Device Package: 10-SSOP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Power (Watts): 7 W
на замовлення 1720 шт:
термін постачання 21-31 дні (днів)
3+147.80 грн
10+104.85 грн
25+95.69 грн
100+80.29 грн
250+75.75 грн
500+73.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VIPER013HS VIPER013HS STMicroelectronics en.DM00255197.pdf Description: IC OFFLINE SW MULT TOP 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 4.5V ~ 30V
Supplier Device Package: 10-SSOP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
на замовлення 1214 шт:
термін постачання 21-31 дні (днів)
5+66.04 грн
10+45.65 грн
25+41.15 грн
100+34.00 грн
250+31.79 грн
500+30.46 грн
Мінімальне замовлення: 5
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VIPER013LS VIPER013LS STMicroelectronics en.DM00255197.pdf Description: IC OFFLINE SW MULT TOP 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 4.5V ~ 30V
Supplier Device Package: 10-SSOP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Power (Watts): 7 W
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STFU13N60M2 stfu13n60m2.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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STFU18N60M2 stfu18n60m2.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V
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STFW12N120K5 en.DM00117846.pdf
STFW12N120K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 1200V 12A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 100 V
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STFW20N65M5 en.DM00076416.pdf
STFW20N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 18A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 100 V
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STFW24NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V TO-3PH
Packaging: Tube
Part Status: Active
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STGF30M65DF2 en.DM00157912.pdf
STGF30M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 38 W
на замовлення 794 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+212.27 грн
50+101.46 грн
100+91.47 грн
500+69.39 грн
Мінімальне замовлення: 2
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STGF6M65DF2 en.DM00248773.pdf
STGF6M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/90ns
Switching Energy: 36µJ (on), 200µJ (off)
Test Condition: 400V, 6A, 22Ohm, 15V
Gate Charge: 21.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 24.2 W
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.57 грн
10+91.30 грн
Мінімальне замовлення: 3
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STGIPN3H60-E STGIPN3H60-E.pdf
Виробник: STMicroelectronics
Description: PWR MODULE 600V 3A 26-POWERDIP
Packaging: Tube
Package / Case: 26-PowerDIP Module (0.846", 21.48mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1000Vrms
Part Status: Active
Current: 3 A
Voltage: 600 V
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STGIPQ3H60T-HLS en.DM00213902.pdf
Виробник: STMicroelectronics
Description: PWR MODULE 600V 3A 26DIP
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STGP20M65DF2 en.DM00245294.pdf
STGP20M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 40A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
на замовлення 631 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.83 грн
50+96.92 грн
100+87.31 грн
500+66.15 грн
Мінімальне замовлення: 2
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STGWA20M65DF2 en.DM00245493.pdf
STGWA20M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH 650V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 166 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/108ns
Switching Energy: 140µJ (on), 560µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 63 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 166 W
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STGWA40H60DLFB
STGWA40H60DLFB
Виробник: STMicroelectronics
Description: IGBT TRENCH 600V 40A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 7V, 40A
Supplier Device Package: TO-247 Long Leads
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 283 W
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STP110N7F6
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 68V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 68 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 25 V
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STP130N8F7
STP130N8F7
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 205W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
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STP140N4F6 STP140N4F6_Rev1_Aug2015.pdf
STP140N4F6
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 40V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Power Dissipation (Max): 168W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
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STP14N80K5 STP14N80K5.pdf
STP14N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 445mOhm @ 6A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
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STP17N80K5 en.DM00173138.pdf
STP17N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 14A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 7A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 866 pF @ 100 V
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STP180N4F6 stp180n4f6.pdf
STP180N4F6
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 40V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Power Dissipation (Max): 190W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
на замовлення 566 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.30 грн
50+72.89 грн
100+66.18 грн
500+50.88 грн
Мінімальне замовлення: 3
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STP20N60M2-EP stp20n60m2-ep.pdf
STP20N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 13A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Power Dissipation (Max): 110W (Tc)
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STP26N60M2 en.DM00218389.pdf
STP26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
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STP3LN80K5 en.DM00175102.pdf
STP3LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 967 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.22 грн
50+63.50 грн
100+58.76 грн
500+43.75 грн
Мінімальне замовлення: 3
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STP4LN80K5 en.DM00180753.pdf
STP4LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V
на замовлення 764 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.95 грн
50+70.57 грн
100+63.27 грн
500+47.38 грн
Мінімальне замовлення: 3
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STP78NF55-08 en.DM00312727.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V TO-220
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STP9N80K5 en.DM00236495.pdf
STP9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STPA001AH en.DM00052126.pdf
STPA001AH
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 50W 27FLEXIWATT
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STPA002OD-4WX en.DM00079491.pdf
STPA002OD-4WX
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 85W 25FLEXIWATT
Packaging: Tube
Features: Mute, Standby
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
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STPA003HSD-48X en.DM00125748.pdf
STPA003HSD-48X
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 85W 27FLEXIWATT
Packaging: Tube
Features: Mute, Short-Circuit and Thermal Protection, Standby
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
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STPA008-48X en.DM00185962.pdf
STPA008-48X
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 50W 27FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Grade: Automotive
Qualification: AEC-Q100
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STPA008-4WX en.DM00185962.pdf
STPA008-4WX
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 50W 25FLEXIWATT
Packaging: Tube
Features: Short-Circuit and Thermal Protection
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Max Output Power x Channels @ Load: 50W x 4 @ 4Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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STPS2045CH en.DM00052137.pdf
STPS2045CH
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 45V 10A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: IPAK (TO-251)
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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STPS20L60CTN en.CD00001710.pdf
STPS20L60CTN
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB Narrow Leads
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 10 A
Current - Reverse Leakage @ Vr: 350 µA @ 60 V
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STPS4045CWY en.CD00285026.pdf
STPS4045CWY
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 45V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 883 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+197.33 грн
10+122.64 грн
100+84.29 грн
500+63.71 грн
Мінімальне замовлення: 2
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STPSC20065D en.DM00288636.pdf
STPSC20065D
Виробник: STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+412.74 грн
10+333.48 грн
100+269.76 грн
500+225.03 грн
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STPSC20065DI en.DM00288636.pdf
STPSC20065DI
Виробник: STMicroelectronics
Description: DIODE SIC 650V 20A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
на замовлення 1179 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+442.62 грн
50+226.78 грн
100+207.59 грн
500+163.28 грн
1000+160.45 грн
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STPSC20065W en.DM00288636.pdf
STPSC20065W
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
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STPSC20065WY en.DM00288933.pdf
STPSC20065WY
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+559.76 грн
30+287.18 грн
120+252.02 грн
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STPSC40065CWY en.DM00289060.pdf
STPSC40065CWY
Виробник: STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 207 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+916.68 грн
10+615.56 грн
100+464.74 грн
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STTH20P035FP
Виробник: STMicroelectronics
Description: DIODE GEN PURP 350V 20A TO220FP
Packaging: Tube
Part Status: Active
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STTH30AC06FP STTH30AC06_Rev.Feb.23%2C2018_DS.pdf
STTH30AC06FP
Виробник: STMicroelectronics
Description: DIODE STD 600V 30A TO220FPAC
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220FPAC
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
на замовлення 1096 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+164.31 грн
50+76.86 грн
100+68.95 грн
500+51.69 грн
1000+47.51 грн
Мінімальне замовлення: 2
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STU3LN80K5 en.DM00090304.pdf
STU3LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: IPAK (TO-251)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 2.63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 102 pF @ 100 V
на замовлення 2991 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+51.10 грн
75+32.87 грн
150+31.55 грн
525+28.70 грн
Мінімальне замовлення: 7
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STW20N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 13A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 278mOhm @ 6.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 787 pF @ 100 V
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STW26N60M2 en.DM00218389.pdf
STW26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
на замовлення 309 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+295.60 грн
10+187.14 грн
100+131.83 грн
Мінімальне замовлення: 2
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STW30N80K5 en.DM00246893.pdf
STW30N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 24A TO247-3
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STW38N65M5-4 en.DM00288438.pdf
STW38N65M5-4
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
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STW70N65M2 en.DM00267729.pdf
STW70N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 31.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 100 V
товару немає в наявності
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STW9N80K5 en.DM00236495.pdf
STW9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 800V 7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
товару немає в наявності
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STWA70N60DM2 STWA70N60DM2.pdf
STWA70N60DM2
Виробник: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
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T2035H-6G en.CD00161297.pdf
T2035H-6G
Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 200A, 210A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 20 A
Voltage - Off State: 600 V
на замовлення 319 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+142.30 грн
50+66.32 грн
100+59.43 грн
Мінімальне замовлення: 3
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T435T-600FP en.CD00276756.pdf
T435T-600FP
Виробник: STMicroelectronics
Description: TRIAC ALTRNSTR 600V 4A TO220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 30A, 32A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
на замовлення 1401 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.62 грн
10+47.24 грн
100+31.05 грн
500+22.60 грн
1000+20.49 грн
Мінімальне замовлення: 4
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T835-800B en.CD00002266.pdf
T835-800B
Виробник: STMicroelectronics
Description: TRIAC ALTERNISTOR 800V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 80A, 84A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 800 V
на замовлення 5039 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+102.99 грн
75+43.84 грн
150+39.20 грн
525+30.59 грн
1050+27.90 грн
2025+25.75 грн
5025+22.92 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TDA7387EP en.DM00073039.pdf
TDA7387EP
Виробник: STMicroelectronics
Description: IC AMP AB QUAD 41W 25FLEXIWATT
Packaging: Tube
Package / Case: 25-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Type: Class AB
Operating Temperature: -30°C ~ 85°C
Max Output Power x Channels @ Load: 41W x 4 @ 4Ohm
Supplier Device Package: 25-Flexiwatt (Vertical)
Part Status: Active
Mounting Type: Through Hole
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TDA75612EP-HLX en.DM00102150.pdf
Виробник: STMicroelectronics
Description: IC AMP AB AUDIO BTL FLEXIWATT
Packaging: Tube
Part Status: Active
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TDA75616EP-HLX en.DM00102159.pdf
Виробник: STMicroelectronics
Description: IC AMP AUD QUAD BTL FLEXIWATT
Packaging: Tube
Part Status: Active
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TDA7850AEP en.SGAUDIOPOW0315.pdf
Виробник: STMicroelectronics
Description: IC AMP QUAD BRIDGE FLEXIWATT25
Packaging: Tube
Part Status: Active
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TN1215-800B-TR en.CD00002269.pdf
TN1215-800B-TR
Виробник: STMicroelectronics
Description: SCR 800V 12A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A, 115A
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: DPAK
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
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TN1215-800H en.CD00002269.pdf
TN1215-800H
Виробник: STMicroelectronics
Description: SCR 800V 12A IPAK (TO-251)
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 110A, 115A
Current - On State (It (AV)) (Max): 8 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: IPAK (TO-251)
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
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TYN1212RG en.DM00043172.pdf
TYN1212RG
Виробник: STMicroelectronics
Description: SCR 1.2KV 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 15 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 50Hz
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 1.2 kV
товару немає в наявності
В кошику  од. на суму  грн.
VIPER012HS en.DM00255197.pdf
VIPER012HS
Виробник: STMicroelectronics
Description: IC OFFLINE SW MULT TOP 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 4.5V ~ 30V
Supplier Device Package: 10-SSOP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Power (Watts): 7 W
на замовлення 1720 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.80 грн
10+104.85 грн
25+95.69 грн
100+80.29 грн
250+75.75 грн
500+73.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
VIPER013HS en.DM00255197.pdf
VIPER013HS
Виробник: STMicroelectronics
Description: IC OFFLINE SW MULT TOP 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 120kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 4.5V ~ 30V
Supplier Device Package: 10-SSOP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 8 V
Part Status: Active
Power (Watts): 7 W
на замовлення 1214 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+66.04 грн
10+45.65 грн
25+41.15 грн
100+34.00 грн
250+31.79 грн
500+30.46 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
VIPER013LS en.DM00255197.pdf
VIPER013LS
Виробник: STMicroelectronics
Description: IC OFFLINE SW MULT TOP 10SSOP
Packaging: Tube
Package / Case: 10-SOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Buck-Boost, Flyback
Voltage - Supply (Vcc/Vdd): 4.5V ~ 30V
Supplier Device Package: 10-SSOP
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Power (Watts): 7 W
товару немає в наявності
В кошику  од. на суму  грн.
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