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MBRF1050CT C0G MBRF1050CT C0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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MBRF1060 C0G MBRF1060 C0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBRF1060CTHC0G MBRF1060CTHC0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 60V ITO220AB
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MBRF1060HC0G MBRF1060HC0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_M2105.pdf Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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MBRF1090 C0G MBRF1090 C0G Taiwan Semiconductor Corporation MBRF1035%20SERIES_L1512.pdf Description: DIODE SCHOTTKY 90V 10A ITO220AC
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MBRF1090CT C0G MBRF1090CT C0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 90V ITO220AB
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MBRF10H100CT C0G MBRF10H100CT C0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF10H150CT C0G MBRF10H150CT C0G Taiwan Semiconductor Corporation MBRF1035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF1660 C0G MBRF1660 C0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 60V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MBRF1660HC0G MBRF1660HC0G Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 60V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF20100 C0G MBRF20100 C0G Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
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MBRF20100CTHC0G MBRF20100CTHC0G Taiwan Semiconductor Corporation MBRF2035CT%20SERIES_O2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF20100HC0G MBRF20100HC0G Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Grade: Automotive
Qualification: AEC-Q101
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MBRF20150CTHC0G MBRF20150CTHC0G Taiwan Semiconductor Corporation MBRF2035CT%20SERIES_N13.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF20200CTHC0G MBRF20200CTHC0G Taiwan Semiconductor Corporation MBRF2035CT%20SERIES_O2105.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
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MBRF2045 C0G MBRF2045 C0G Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 45V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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MBRF2045CT C0G MBRF2045CT C0G Taiwan Semiconductor Corporation MBRF2035CT%20SERIES_N13.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF2045CTHC0G MBRF2045CTHC0G Taiwan Semiconductor Corporation MBRF2035CT%20SERIES_N13.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF2045HC0G MBRF2045HC0G Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 45V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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MBRF2060 C0G MBRF2060 C0G Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 60V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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MBRF2060CTHC0G MBRF2060CTHC0G Taiwan Semiconductor Corporation MBRF2035CT%20SERIES_O2105.pdf Description: DIODE ARR SCHOT 60V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF2060HC0G MBRF2060HC0G Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 60V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF20H150CT C0G MBRF20H150CT C0G Taiwan Semiconductor Corporation MBRF20H100CT%20SERIES_H13.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF20H200CT C0G MBRF20H200CT C0G Taiwan Semiconductor Corporation MBRF20H100CT%20SERIES_H13.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
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MBRF30100CT C0G MBRF30100CT C0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF30100CTHC0G MBRF30100CTHC0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF30150CT C0G MBRF30150CT C0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF30150CTHC0G MBRF30150CTHC0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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MBRF30200CTHC0G MBRF30200CTHC0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_M2105.pdf Description: DIODE ARR SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF3045CT C0G MBRF3045CT C0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF3045CTHC0G MBRF3045CTHC0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_L13.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF3080CT C0G MBRF3080CT C0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 80V ITO220AB
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MBRF3080CTHC0G MBRF3080CTHC0G Taiwan Semiconductor Corporation MBRF3035CT%20SERIES_M2105.pdf Description: DIODE ARRAY SCHOTT 80V ITO220AB
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MBRF30L120CT C0G MBRF30L120CT C0G Taiwan Semiconductor Corporation MBRF30L120CT_E13.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
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MBRF30L120CTHC0G MBRF30L120CTHC0G Taiwan Semiconductor Corporation MBRF30L120CT_E13.pdf Description: DIODE ARRAY SCHOTT 120V ITO220AB
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MBRF30L45CT C0G MBRF30L45CT C0G Taiwan Semiconductor Corporation MBRF30L45CT_K13.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF30L45CTHC0G MBRF30L45CTHC0G Taiwan Semiconductor Corporation MBRF30L45CT_L2105.pdf Description: DIODE ARR SCHOT 45V 30A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 30 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
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MBRF5100HC0G MBRF5100HC0G Taiwan Semiconductor Corporation MBRF5100%20SERIES_G1512.pdf Description: DIODE SCHOTTKY 100V 5A ITO220AC
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MBRI30100CT C0G MBRI30100CT C0G Taiwan Semiconductor Corporation MBRI30100CT_F2104.pdf Description: DIODE ARRAY SCHOTTKY 100V I2PAK
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MUR1620CTHC0G MUR1620CTHC0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MUR1640CT C0G MUR1640CT C0G Taiwan Semiconductor Corporation MUR1620CT%20SERIES_I2104.pdf Description: DIODE ARRAY GP 400V 16A TO220AB
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MUR1640CTHC0G MUR1640CTHC0G Taiwan Semiconductor Corporation MUR1620CT%20SERIES_I2104.pdf Description: DIODE ARRAY GP 400V 16A TO220AB
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MUR820 C0G Taiwan Semiconductor Corporation Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR820HC0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MUR840 C0G Taiwan Semiconductor Corporation Description: DIODE STANDARD 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MUR840HC0G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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MUR860HC0G Taiwan Semiconductor Corporation Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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MUR8L60 C0G MUR8L60 C0G Taiwan Semiconductor Corporation MUR8L60_B2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MUR8L60HC0G MUR8L60HC0G Taiwan Semiconductor Corporation MUR8L60_B2103.pdf Description: DIODE GEN PURP 600V 8A TO220AC
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MURF10L60 C0G MURF10L60 C0G Taiwan Semiconductor Corporation MURF10L60_A1601.pdf Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURF1640CT C0G MURF1640CT C0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_J1511.pdf Description: DIODE ARRAY GP 400V ITO-220AB
на замовлення 435 шт:
термін постачання 21-31 дні (днів)
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MURF1660CT C0G MURF1660CT C0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_J1511.pdf Description: DIODE ARRAY GP 600V ITO-220AB
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MURF1660CTHC0G MURF1660CTHC0G Taiwan Semiconductor Corporation MURF1620CT%20SERIES_J1511.pdf Description: DIODE ARRAY GP 600V ITO-220AB
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MURF8L60 C0G MURF8L60 C0G Taiwan Semiconductor Corporation MURF8L60_C2105.pdf Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RDBLS207G C1G RDBLS207G C1G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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RDBLS207GHC1G RDBLS207GHC1G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: AEC-Q101
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SF1003G C0G SF1003G C0G Taiwan Semiconductor Corporation SF1001G%20SERIES_J15.pdf Description: DIODE GEN PURP 150V 10A TO220AB
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SF1004G C0G SF1004G C0G Taiwan Semiconductor Corporation SF1001G%20SERIES_J15.pdf Description: DIODE GEN PURP 200V 10A TO220AB
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SF1004GHC0G SF1004GHC0G Taiwan Semiconductor Corporation SF1001G%20SERIES_K2104.pdf Description: DIODE GEN PURP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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SF1601PTHC0G SF1601PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MBRF1050CT C0G MBRF1035CT%20SERIES_M2105.pdf
MBRF1050CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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MBRF1060 C0G MBRF1035CT%20SERIES_M2105.pdf
MBRF1060 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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MBRF1060CTHC0G MBRF1035CT%20SERIES_L13.pdf
MBRF1060CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 60V ITO220AB
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MBRF1060HC0G MBRF1035CT%20SERIES_M2105.pdf
MBRF1060HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Qualification: AEC-Q101
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MBRF1090 C0G MBRF1035%20SERIES_L1512.pdf
MBRF1090 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A ITO220AC
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MBRF1090CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF1090CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 90V ITO220AB
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MBRF10H100CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF10H100CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF10H150CT C0G MBRF1035CT%20SERIES_L13.pdf
MBRF10H150CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF1660 C0G MBRF1635%20SERIES_K2105.pdf
MBRF1660 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MBRF1660HC0G MBRF1635%20SERIES_K2105.pdf
MBRF1660HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF20100 C0G MBRF2035%20SERIES_K2105.pdf
MBRF20100 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
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MBRF20100CTHC0G MBRF2035CT%20SERIES_O2105.pdf
MBRF20100CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF20100HC0G MBRF2035%20SERIES_K2105.pdf
MBRF20100HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 20
Voltage Coupled to Current - Reverse Leakage @ Vr: 100
Grade: Automotive
Qualification: AEC-Q101
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MBRF20150CTHC0G MBRF2035CT%20SERIES_N13.pdf
MBRF20150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF20200CTHC0G MBRF2035CT%20SERIES_O2105.pdf
MBRF20200CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
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MBRF2045 C0G MBRF2035%20SERIES_K2105.pdf
MBRF2045 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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MBRF2045CT C0G MBRF2035CT%20SERIES_N13.pdf
MBRF2045CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF2045CTHC0G MBRF2035CT%20SERIES_N13.pdf
MBRF2045CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF2045HC0G MBRF2035%20SERIES_K2105.pdf
MBRF2045HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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MBRF2060 C0G MBRF2035%20SERIES_K2105.pdf
MBRF2060 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
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MBRF2060CTHC0G MBRF2035CT%20SERIES_O2105.pdf
MBRF2060CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 60V 20A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF2060HC0G MBRF2035%20SERIES_K2105.pdf
MBRF2060HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 20A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF20H150CT C0G MBRF20H100CT%20SERIES_H13.pdf
MBRF20H150CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF20H200CT C0G MBRF20H100CT%20SERIES_H13.pdf
MBRF20H200CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 200V ITO220AB
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MBRF30100CT C0G MBRF3035CT%20SERIES_M2105.pdf
MBRF30100CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF30100CTHC0G MBRF3035CT%20SERIES_M2105.pdf
MBRF30100CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 100V ITO220AB
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MBRF30150CT C0G MBRF3035CT%20SERIES_L13.pdf
MBRF30150CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
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MBRF30150CTHC0G MBRF3035CT%20SERIES_M2105.pdf
MBRF30150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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MBRF30200CTHC0G MBRF3035CT%20SERIES_M2105.pdf
MBRF30200CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBRF3045CT C0G MBRF3035CT%20SERIES_L13.pdf
MBRF3045CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF3045CTHC0G MBRF3035CT%20SERIES_L13.pdf
MBRF3045CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF3080CT C0G MBRF3035CT%20SERIES_M2105.pdf
MBRF3080CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 80V ITO220AB
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MBRF3080CTHC0G MBRF3035CT%20SERIES_M2105.pdf
MBRF3080CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 80V ITO220AB
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MBRF30L120CT C0G MBRF30L120CT_E13.pdf
MBRF30L120CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
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MBRF30L120CTHC0G MBRF30L120CT_E13.pdf
MBRF30L120CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 120V ITO220AB
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MBRF30L45CT C0G MBRF30L45CT_K13.pdf
MBRF30L45CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
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MBRF30L45CTHC0G MBRF30L45CT_L2105.pdf
MBRF30L45CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 45V 30A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 30 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
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MBRF5100HC0G MBRF5100%20SERIES_G1512.pdf
MBRF5100HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A ITO220AC
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MBRI30100CT C0G MBRI30100CT_F2104.pdf
MBRI30100CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V I2PAK
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MUR1620CTHC0G
MUR1620CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MUR1640CT C0G MUR1620CT%20SERIES_I2104.pdf
MUR1640CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A TO220AB
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MUR1640CTHC0G MUR1620CT%20SERIES_I2104.pdf
MUR1640CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A TO220AB
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MUR820 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MUR820HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MUR840 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MUR840HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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MUR860HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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MUR8L60 C0G MUR8L60_B2103.pdf
MUR8L60 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MUR8L60HC0G MUR8L60_B2103.pdf
MUR8L60HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A TO220AC
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MURF10L60 C0G MURF10L60_A1601.pdf
MURF10L60 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURF1640CT C0G MURF1620CT%20SERIES_J1511.pdf
MURF1640CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V ITO-220AB
на замовлення 435 шт:
термін постачання 21-31 дні (днів)
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MURF1660CT C0G MURF1620CT%20SERIES_J1511.pdf
MURF1660CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V ITO-220AB
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MURF1660CTHC0G MURF1620CT%20SERIES_J1511.pdf
MURF1660CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V ITO-220AB
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MURF8L60 C0G MURF8L60_C2105.pdf
MURF8L60 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RDBLS207G C1G
RDBLS207G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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RDBLS207GHC1G
RDBLS207GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: AEC-Q101
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SF1003G C0G SF1001G%20SERIES_J15.pdf
SF1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A TO220AB
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SF1004G C0G SF1001G%20SERIES_J15.pdf
SF1004G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
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SF1004GHC0G SF1001G%20SERIES_K2104.pdf
SF1004GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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SF1601PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1601PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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