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SF1602PTHC0G SF1602PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF1603PTHC0G SF1603PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 150V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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SF1604G C0G SF1604G C0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 200V 16A TO220AB
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SF1604PTHC0G SF1604PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 200V 16A TO247AD
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SF1605G C0G SF1605G C0G Taiwan Semiconductor Corporation SF1601G%20SERIES_I2104.pdf Description: DIODE GEN PURP 300V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SF1605GHC0G SF1605GHC0G Taiwan Semiconductor Corporation SF1601G%20SERIES_H1511.pdf Description: DIODE GEN PURP 300V 16A TO220AB
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SF1605PTHC0G SF1605PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_F1601.pdf Description: DIODE GEN PURP 300V 16A TO247AD
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SF1606PTHC0G SF1606PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_F1601.pdf Description: DIODE GEN PURP 400V 16A TO247AD
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SF1607PTHC0G SF1607PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_F1601.pdf Description: DIODE GEN PURP 500V 16A TO247AD
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SF1608PTHC0G SF1608PTHC0G Taiwan Semiconductor Corporation SF1601PT%20SERIES_G2103.pdf Description: DIODE GEN PURP 600V 16A TO247AD
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SF2001PTHC0G SF2001PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 50V 20A TO247AD
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SF2002PTHC0G SF2002PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 100V 20A TO247AD
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SF2003PTHC0G SF2003PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 150V 20A TO247AD
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SF2004PT C0G SF2004PT C0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 200V 20A TO247AD
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SF2004PTHC0G SF2004PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 200V 20A TO247AD
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SF2005PTHC0G SF2005PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 300V 20A TO247AD
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SF2006PTHC0G SF2006PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 400V 20A TO247AD
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SF2007PTHC0G SF2007PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 500V 20A TO247AD
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SF2008PTHC0G SF2008PTHC0G Taiwan Semiconductor Corporation SF2001PT%20SERIES_H1601.pdf Description: DIODE GEN PURP 600V 20A TO247AD
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SF3001PTHC0G SF3001PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 50V 30A TO247AD
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SF3002PT C0G SF3002PT C0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_J2103.pdf Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF3002PTHC0G SF3002PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_J2103.pdf Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SF3003PTHC0G SF3003PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_J2103.pdf Description: DIODE STANDARD 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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SF3004PTHC0G SF3004PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 200V 30A TO247AD
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SF3006PT C0G SF3006PT C0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 400V 30A TO247AD
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SF3006PTHC0G SF3006PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 400V 30A TO247AD
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SF3008PTHC0G SF3008PTHC0G Taiwan Semiconductor Corporation SF3001PT%20SERIES_H15.pdf Description: DIODE GEN PURP 600V 30A TO247AD
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SFA1001G C0G SFA1001G C0G Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: DIODE GEN PURP 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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SFA1001GHC0G Taiwan Semiconductor Corporation SFA1001G%20SERIES_K2103.pdf Description: DIODE STANDARD 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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SFA1003G C0G SFA1003G C0G Taiwan Semiconductor Corporation SFA1001G%20SERIES_J1511.pdf Description: DIODE GEN PURP 150V 10A TO220AC
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SFAF1003G C0G SFAF1003G C0G Taiwan Semiconductor Corporation SFAF1001G%20SERIES_H2105.pdf Description: DIODE GEN PURP 150V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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SFAF1605G C0G SFAF1605G C0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFAF1605GHC0G SFAF1605GHC0G Taiwan Semiconductor Corporation SFAF1601G%20SERIES_H2105.pdf Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFAF502G C0G SFAF502G C0G Taiwan Semiconductor Corporation SFAF501G%20SERIES_H1512.pdf Description: DIODE GEN PURP 100V 5A ITO220AC
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SFF1003G C0G SFF1003G C0G Taiwan Semiconductor Corporation SFF1001G%20SERIES_L14.pdf Description: DIODE GEN PURP 150V 10A ITO220AB
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SFF1605G C0G SFF1605G C0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 16A ITO220AB
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SFF1605GHC0G SFF1605GHC0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 300V 16A ITO220AB
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SFF1606GHC0G SFF1606GHC0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 400V 16A ITO220AB
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SFF1608G C0G SFF1608G C0G Taiwan Semiconductor Corporation SFF1601G%20SERIES_H14.pdf Description: DIODE GEN PURP 600V 16A ITO220AB
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SFF502G C0G SFF502G C0G Taiwan Semiconductor Corporation SFF501G%20SERIES_H1511.pdf Description: DIODE GEN PURP 100V 5A ITO220AB
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SR1040 C0G SR1040 C0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 40V 10A TO220AB
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SR1040HC0G SR1040HC0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 40V 10A TO220AB
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SR1060 C0G SR1060 C0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
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SR1060HC0G SR1060HC0G Taiwan Semiconductor Corporation SR1020%20SERIES_L2104.pdf Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SR1090 C0G SR1090 C0G Taiwan Semiconductor Corporation SR1020%20SERIES_K13.pdf Description: DIODE SCHOTTKY 90V 10A TO220AB
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SR1090HC0G SR1090HC0G Taiwan Semiconductor Corporation SR1020%20SERIES_K13.pdf Description: DIODE SCHOTTKY 90V 10A TO220AB
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SR1620PT C0G SR1620PT C0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_H15.pdf Description: DIODE ARRAY SCHOTTKY 20V TO247AD
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SR1650 C0G SR1650 C0G Taiwan Semiconductor Corporation SR1620%20SERIES_J2104.pdf Description: DIODE ARR SCHOTT 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SR1650HC0G SR1650HC0G Taiwan Semiconductor Corporation SR1620%20SERIES_J2104.pdf Description: DIODE ARR SCHOTT 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SR1650PT C0G SR1650PT C0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_J2103.pdf Description: DIODE ARR SCHOTT 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SR1650PTHC0G SR1650PTHC0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_J2103.pdf Description: DIODE ARR SCHOTT 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SR2040 C0G SR2040 C0G Taiwan Semiconductor Corporation SR2020%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220AB
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SR2040HC0G SR2040HC0G Taiwan Semiconductor Corporation SR2020%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTTKY 40V TO220AB
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SR2040PT C0G SR2040PT C0G Taiwan Semiconductor Corporation SR2020PT%20SERIES_J2103.pdf Description: DIODE ARRAY GP 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SR2040PTHC0G SR2040PTHC0G Taiwan Semiconductor Corporation SR2020PT%20SERIES_J2103.pdf Description: DIODE ARRAY GP 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SR2060 C0G SR2060 C0G Taiwan Semiconductor Corporation SR2020%20SERIES_I13.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220AB
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SR30100PT C0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOT 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SR30100PTHC0G SR30100PTHC0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOT 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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SR3020PT C0G SR3020PT C0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 20V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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SR3020PTHC0G SR3020PTHC0G Taiwan Semiconductor Corporation SR3020PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 20V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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SF1602PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1602PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF1603PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1603PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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SF1604G C0G SF1601G%20SERIES_I2104.pdf
SF1604G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO220AB
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SF1604PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1604PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 16A TO247AD
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SF1605G C0G SF1601G%20SERIES_I2104.pdf
SF1605G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SF1605GHC0G SF1601G%20SERIES_H1511.pdf
SF1605GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO220AB
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SF1605PTHC0G SF1601PT%20SERIES_F1601.pdf
SF1605PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A TO247AD
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SF1606PTHC0G SF1601PT%20SERIES_F1601.pdf
SF1606PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A TO247AD
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SF1607PTHC0G SF1601PT%20SERIES_F1601.pdf
SF1607PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 16A TO247AD
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SF1608PTHC0G SF1601PT%20SERIES_G2103.pdf
SF1608PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A TO247AD
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SF2001PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2001PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 20A TO247AD
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SF2002PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2002PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 20A TO247AD
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SF2003PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2003PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 20A TO247AD
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SF2004PT C0G SF2001PT%20SERIES_H1601.pdf
SF2004PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO247AD
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SF2004PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2004PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 20A TO247AD
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SF2005PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2005PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 20A TO247AD
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SF2006PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2006PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 20A TO247AD
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SF2007PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2007PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 20A TO247AD
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SF2008PTHC0G SF2001PT%20SERIES_H1601.pdf
SF2008PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 20A TO247AD
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SF3001PTHC0G SF3001PT%20SERIES_H15.pdf
SF3001PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 30A TO247AD
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SF3002PT C0G SF3001PT%20SERIES_J2103.pdf
SF3002PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF3002PTHC0G SF3001PT%20SERIES_J2103.pdf
SF3002PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SF3003PTHC0G SF3001PT%20SERIES_J2103.pdf
SF3003PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 150V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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SF3004PTHC0G SF3001PT%20SERIES_H15.pdf
SF3004PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 30A TO247AD
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SF3006PT C0G SF3001PT%20SERIES_H15.pdf
SF3006PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 30A TO247AD
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SF3006PTHC0G SF3001PT%20SERIES_H15.pdf
SF3006PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 30A TO247AD
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SF3008PTHC0G SF3001PT%20SERIES_H15.pdf
SF3008PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 30A TO247AD
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SFA1001G C0G SFA1001G%20SERIES_K2103.pdf
SFA1001G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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SFA1001GHC0G SFA1001G%20SERIES_K2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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SFA1003G C0G SFA1001G%20SERIES_J1511.pdf
SFA1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A TO220AC
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SFAF1003G C0G SFAF1001G%20SERIES_H2105.pdf
SFAF1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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SFAF1605G C0G SFAF1601G%20SERIES_H2105.pdf
SFAF1605G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFAF1605GHC0G SFAF1601G%20SERIES_H2105.pdf
SFAF1605GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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SFAF502G C0G SFAF501G%20SERIES_H1512.pdf
SFAF502G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A ITO220AC
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SFF1003G C0G SFF1001G%20SERIES_L14.pdf
SFF1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 10A ITO220AB
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SFF1605G C0G SFF1601G%20SERIES_H14.pdf
SFF1605G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AB
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SFF1605GHC0G SFF1601G%20SERIES_H14.pdf
SFF1605GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 16A ITO220AB
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В кошику  од. на суму  грн.
SFF1606GHC0G SFF1601G%20SERIES_H14.pdf
SFF1606GHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A ITO220AB
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SFF1608G C0G SFF1601G%20SERIES_H14.pdf
SFF1608G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 16A ITO220AB
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SFF502G C0G SFF501G%20SERIES_H1511.pdf
SFF502G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 5A ITO220AB
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SR1040 C0G SR1020%20SERIES_L2104.pdf
SR1040 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 10A TO220AB
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SR1040HC0G SR1020%20SERIES_L2104.pdf
SR1040HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 10A TO220AB
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В кошику  од. на суму  грн.
SR1060 C0G SR1020%20SERIES_L2104.pdf
SR1060 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
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SR1060HC0G SR1020%20SERIES_L2104.pdf
SR1060HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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SR1090 C0G SR1020%20SERIES_K13.pdf
SR1090 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A TO220AB
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SR1090HC0G SR1020%20SERIES_K13.pdf
SR1090HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 10A TO220AB
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SR1620PT C0G SR1620PT%20SERIES_H15.pdf
SR1620PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 20V TO247AD
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SR1650 C0G SR1620%20SERIES_J2104.pdf
SR1650 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SR1650HC0G SR1620%20SERIES_J2104.pdf
SR1650HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SR1650PT C0G SR1620PT%20SERIES_J2103.pdf
SR1650PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
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SR1650PTHC0G SR1620PT%20SERIES_J2103.pdf
SR1650PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Qualification: AEC-Q101
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SR2040 C0G SR2020%20SERIES_I13.pdf
SR2040 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 40V TO220AB
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SR2040HC0G SR2020%20SERIES_I13.pdf
SR2040HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 40V TO220AB
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SR2040PT C0G SR2020PT%20SERIES_J2103.pdf
SR2040PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SR2040PTHC0G SR2020PT%20SERIES_J2103.pdf
SR2040PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SR2060 C0G SR2020%20SERIES_I13.pdf
SR2060 C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
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SR30100PT C0G SR3020PT%20SERIES_H2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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SR30100PTHC0G SR3020PT%20SERIES_H2103.pdf
SR30100PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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SR3020PT C0G SR3020PT%20SERIES_H2103.pdf
SR3020PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 20V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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SR3020PTHC0G SR3020PT%20SERIES_H2103.pdf
SR3020PTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 20V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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