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P4SMA170H P4SMA170H Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170 P4SMA170 Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA170CA P4SMA170CA Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA170CAH P4SMA170CAH Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170CH P4SMA170CH Taiwan Semiconductor Corporation P4SMAH SERIES_A2102.pdf Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170C P4SMA170C Taiwan Semiconductor Corporation P4SMA SERIES_S2102.pdf Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
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ES3FB ES3FB Taiwan Semiconductor Corporation ES3AB SERIES_C2102.pdf Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.28 грн
Мінімальне замовлення: 3000
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ES3FB ES3FB Taiwan Semiconductor Corporation ES3AB SERIES_C2102.pdf Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
10+33.12 грн
12+27.59 грн
100+19.15 грн
500+14.03 грн
1000+11.40 грн
Мінімальне замовлення: 10
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ES3FBH ES3FBH Taiwan Semiconductor Corporation ES3ABH SERIES_A2102.pdf Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+11.28 грн
Мінімальне замовлення: 3000
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ES3FBH ES3FBH Taiwan Semiconductor Corporation ES3ABH SERIES_A2102.pdf Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
10+33.12 грн
12+27.59 грн
100+19.15 грн
500+14.03 грн
1000+11.40 грн
Мінімальне замовлення: 10
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GBPC15005 GBPC15005 Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1PHASE 50V 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBPC15005W GBPC15005W Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 50V 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBPC15005M GBPC15005M Taiwan Semiconductor Corporation GBPC15_25_35%20SERIES_M2211.pdf Description: BRIDGE RECT 1P 50V 15A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N4933G-K 1N4933G-K Taiwan Semiconductor Corporation 1N4933G-K SERIES_B2104.pdf Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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3KSMC26AH 3KSMC26AH Taiwan Semiconductor Corporation 3KSMC12AH SERIES_B2012.pdf Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KSMC26AH 5KSMC26AH Taiwan Semiconductor Corporation 5KSMC10AH%20SERIES_A2012.pdf Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 118.8A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ8.5CAH SMAJ8.5CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: 400W, 9.9V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ17A SMCJ17A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ17A SMCJ17A Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZX85C7V5 R0G BZX85C7V5 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 7.5V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
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BZX85C7V5 BZX85C7V5 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 7.5V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
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BZX85C7V5 A0G BZX85C7V5 A0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 7.5V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
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BZW04-15B BZW04-15B Taiwan Semiconductor Corporation BZW04 SERIES_J2104.pdf Description: TVS DIODE 15.3VWM 25.2V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-15 BZW04-15 Taiwan Semiconductor Corporation BZW04 SERIES_J2104.pdf Description: TVS DIODE 15.3VWM 25.2V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-154 BZW04-154 Taiwan Semiconductor Corporation BZW04 SERIES_J2104.pdf Description: TVS DIODE 154VWM 246VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 400W
Power Line Protection: No
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P6KE300 P6KE300 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 300V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE300H P6KE300H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 300V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE300CH P6KE300CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 300V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE300C P6KE300C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 300V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE150H P6KE150H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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P6KE150 P6KE150 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
P6KE150CH P6KE150CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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P6KE150C P6KE150C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
TLD8S28CAH TLD8S28CAH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: 6600W, 32.75V, 5%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
750+128.89 грн
1500+106.28 грн
2250+100.07 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
TLD8S28CAH TLD8S28CAH Taiwan Semiconductor Corporation TLD8S10AH SERIES_E2310.pdf Description: 6600W, 32.75V, 5%, BIDIRECTIONAL
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+213.64 грн
10+172.63 грн
100+139.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SMBJ28CH SMBJ28CH Taiwan Semiconductor Corporation SMBJH SERIES_A2102.pdf Description: 600W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ28C SMBJ28C Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: 600W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ28CH SMCJ28CH Taiwan Semiconductor Corporation SMCJH SERIES_A2102.pdf Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ28C SMCJ28C Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
TSM60NC620CH C5G TSM60NC620CH C5G Taiwan Semiconductor Corporation TSM60NC620CH_A2303.pdf Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3+119.24 грн
10+95.13 грн
100+75.72 грн
500+60.13 грн
1000+51.02 грн
2000+48.47 грн
5000+45.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TSM60NC620CP ROG TSM60NC620CP ROG Taiwan Semiconductor Corporation TSM60NC620CP_A2303.pdf Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+52.27 грн
5000+48.05 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM60NC620CP ROG TSM60NC620CP ROG Taiwan Semiconductor Corporation TSM60NC620CP_A2303.pdf Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+178.86 грн
10+110.68 грн
100+75.53 грн
500+56.73 грн
1000+52.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM60NE285CH C5G TSM60NE285CH C5G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE285CH Description: MOSFET
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
на замовлення 3726 шт:
термін постачання 21-31 дні (днів)
2+264.15 грн
10+166.25 грн
100+116.36 грн
500+89.20 грн
1000+82.77 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM60NE285CIT C0G TSM60NE285CIT C0G Taiwan Semiconductor Corporation Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+222.75 грн
10+179.65 грн
100+145.32 грн
500+121.22 грн
1000+103.79 грн
2000+97.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM60NE200CIT C0G TSM60NE200CIT C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE200CIT Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+293.13 грн
10+187.23 грн
100+133.17 грн
500+112.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM60NE180CIT C0G TSM60NE180CIT C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE180CIT Description: 600V, 13A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+322.94 грн
10+207.24 грн
100+148.19 грн
500+128.49 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TSM60NE084CIT C0G TSM60NE084CIT C0G Taiwan Semiconductor Corporation pdf.php?pn=TSM60NE084CIT Description: 600V, 21A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+722.06 грн
10+476.99 грн
100+353.62 грн
500+294.91 грн
В кошику  од. на суму  грн.
TSM60NE084PW C0G TSM60NE084PW C0G Taiwan Semiconductor Corporation TSM60NE084PW_A2403.pdf Description: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+667.41 грн
10+550.83 грн
300+432.03 грн
В кошику  од. на суму  грн.
TSM60NE069CIT C0G TSM60NE069CIT C0G Taiwan Semiconductor Corporation TSM60NE069CIT_A2403.pdf Description: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+728.69 грн
10+601.71 грн
100+501.39 грн
500+415.18 грн
1000+373.66 грн
В кошику  од. на суму  грн.
TSM60NE069PW C0G TSM60NE069PW C0G Taiwan Semiconductor Corporation TSM60NE069PW_A2403.pdf Description: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
1+786.65 грн
10+649.39 грн
В кошику  од. на суму  грн.
TSM60NE048PW C0G TSM60NE048PW C0G Taiwan Semiconductor Corporation Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+943.98 грн
10+800.49 грн
300+670.72 грн
В кошику  од. на суму  грн.
TSM60NC165CI Taiwan Semiconductor Corporation Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
товару немає в наявності
В кошику  од. на суму  грн.
UG54GH UG54GH Taiwan Semiconductor Corporation UG54G SERIES_F2111.pdf Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
1250+15.59 грн
Мінімальне замовлення: 1250
В кошику  од. на суму  грн.
UG54GH UG54GH Taiwan Semiconductor Corporation UG54G SERIES_F2111.pdf Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
8+41.40 грн
10+34.05 грн
100+23.67 грн
500+17.34 грн
Мінімальне замовлення: 8
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TSP3H150S TSP3H150S Taiwan Semiconductor Corporation TSP3H150S_B2103.pdf Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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TSP3H150S TSP3H150S Taiwan Semiconductor Corporation TSP3H150S_B2103.pdf Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
10+34.78 грн
11+29.02 грн
100+20.16 грн
Мінімальне замовлення: 10
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MBR2035CT-Y MBR2035CT-Y Taiwan Semiconductor Corporation MBR2035CT-Y%20SERIES_B2104.pdf Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CT MBR2035CT Taiwan Semiconductor Corporation MBR2035CT%20SERIES_M2104.pdf Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CTH MBR2035CTH Taiwan Semiconductor Corporation MBR2035CT%20SERIES_M2104.pdf Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
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UG1005G UG1005G Taiwan Semiconductor Corporation UG1004G SERIES_B2104.pdf Description: DIODE ARRAY GP 300V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
6+64.59 грн
50+50.03 грн
100+39.65 грн
500+31.54 грн
1000+25.69 грн
Мінімальне замовлення: 6
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P4SMA170H P4SMAH SERIES_A2102.pdf
P4SMA170H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170 P4SMA SERIES_S2102.pdf
P4SMA170
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA170CA P4SMA SERIES_S2102.pdf
P4SMA170CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4SMA170CAH P4SMAH SERIES_A2102.pdf
P4SMA170CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 145VWM 234VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.8A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170CH P4SMAH SERIES_A2102.pdf
P4SMA170CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA170C P4SMA SERIES_S2102.pdf
P4SMA170C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 138VWM 244VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 138V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 153V
Voltage - Clamping (Max) @ Ipp: 244V
Power - Peak Pulse: 400W
Power Line Protection: No
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ES3FB ES3AB SERIES_C2102.pdf
ES3FB
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ES3FB ES3AB SERIES_C2102.pdf
ES3FB
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.12 грн
12+27.59 грн
100+19.15 грн
500+14.03 грн
1000+11.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
ES3FBH ES3ABH SERIES_A2102.pdf
ES3FBH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.28 грн
Мінімальне замовлення: 3000
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ES3FBH ES3ABH SERIES_A2102.pdf
ES3FBH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 41pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
Qualification: AEC-Q101
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.12 грн
12+27.59 грн
100+19.15 грн
500+14.03 грн
1000+11.40 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
GBPC15005 GBPC15_25_35%20SERIES_M2211.pdf
GBPC15005
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 15A GBPC
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBPC15005W GBPC15_25_35%20SERIES_M2211.pdf
GBPC15005W
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 15A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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GBPC15005M GBPC15_25_35%20SERIES_M2211.pdf
GBPC15005M
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 50V 15A GBPC-M
Packaging: Tray
Package / Case: 4-Square, GBPC-M
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-M
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N4933G-K 1N4933G-K SERIES_B2104.pdf
1N4933G-K
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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3KSMC26AH 3KSMC12AH SERIES_B2012.pdf
3KSMC26AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V (Max)
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KSMC26AH 5KSMC10AH%20SERIES_A2012.pdf
5KSMC26AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 118.8A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ8.5CAH SMAJH SERIES_A2102.pdf
SMAJ8.5CAH
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 9.9V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ17A SMCJ SERIES_S2104.pdf
SMCJ17A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ17A SMCJ SERIES_S2104.pdf
SMCJ17A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 54.3A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZX85C7V5 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C7V5 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
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BZX85C7V5 BZX85C3V3%20SERIES_H2301.pdf
BZX85C7V5
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
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BZX85C7V5 A0G BZX85C3V3%20SERIES_H2301.pdf
BZX85C7V5 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 4.5 V
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BZW04-15B BZW04 SERIES_J2104.pdf
BZW04-15B
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.2V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-15 BZW04 SERIES_J2104.pdf
BZW04-15
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.2V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 400W
Power Line Protection: No
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BZW04-154 BZW04 SERIES_J2104.pdf
BZW04-154
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 154VWM 246VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.6A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 400W
Power Line Protection: No
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P6KE300 P6KE SERIES_P2203.pdf
P6KE300
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 300V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE300H P6KE SERIES_P2203.pdf
P6KE300H
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 300V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE300CH P6KE SERIES_P2203.pdf
P6KE300CH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 300V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE300C P6KE SERIES_P2203.pdf
P6KE300C
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 300V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.4A
Voltage - Reverse Standoff (Typ): 243V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 270V
Voltage - Clamping (Max) @ Ipp: 430V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE150H P6KE SERIES_P2203.pdf
P6KE150H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE150 P6KE SERIES_P2203.pdf
P6KE150
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE150CH P6KE SERIES_P2203.pdf
P6KE150CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE150C P6KE SERIES_P2203.pdf
P6KE150C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 121VWM 215VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.9A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 600W
Power Line Protection: No
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TLD8S28CAH TLD8S10AH SERIES_E2310.pdf
TLD8S28CAH
Виробник: Taiwan Semiconductor Corporation
Description: 6600W, 32.75V, 5%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+128.89 грн
1500+106.28 грн
2250+100.07 грн
Мінімальне замовлення: 750
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TLD8S28CAH TLD8S10AH SERIES_E2310.pdf
TLD8S28CAH
Виробник: Taiwan Semiconductor Corporation
Description: 6600W, 32.75V, 5%, BIDIRECTIONAL
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 145A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.64 грн
10+172.63 грн
100+139.63 грн
Мінімальне замовлення: 2
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SMBJ28CH SMBJH SERIES_A2102.pdf
SMBJ28CH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ28C SMBJ SERIES_R2104.pdf
SMBJ28C
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 34.6V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.6A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMCJ28CH SMCJH SERIES_A2102.pdf
SMCJ28CH
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ28C SMCJ SERIES_S2104.pdf
SMCJ28C
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 34.6V, 10%, BIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 50V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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TSM60NC620CH C5G TSM60NC620CH_A2303.pdf
TSM60NC620CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.24 грн
10+95.13 грн
100+75.72 грн
500+60.13 грн
1000+51.02 грн
2000+48.47 грн
5000+45.88 грн
Мінімальне замовлення: 3
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TSM60NC620CP ROG TSM60NC620CP_A2303.pdf
TSM60NC620CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.27 грн
5000+48.05 грн
Мінімальне замовлення: 2500
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TSM60NC620CP ROG TSM60NC620CP_A2303.pdf
TSM60NC620CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.86 грн
10+110.68 грн
100+75.53 грн
500+56.73 грн
1000+52.17 грн
Мінімальне замовлення: 2
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TSM60NE285CH C5G pdf.php?pn=TSM60NE285CH
TSM60NE285CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
на замовлення 3726 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+264.15 грн
10+166.25 грн
100+116.36 грн
500+89.20 грн
1000+82.77 грн
Мінімальне замовлення: 2
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TSM60NE285CIT C0G
TSM60NE285CIT C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 3.2A, 12V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.75 грн
10+179.65 грн
100+145.32 грн
500+121.22 грн
1000+103.79 грн
2000+97.73 грн
Мінімальне замовлення: 2
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TSM60NE200CIT C0G pdf.php?pn=TSM60NE200CIT
TSM60NE200CIT C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+293.13 грн
10+187.23 грн
100+133.17 грн
500+112.88 грн
Мінімальне замовлення: 2
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TSM60NE180CIT C0G pdf.php?pn=TSM60NE180CIT
TSM60NE180CIT C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 13A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+322.94 грн
10+207.24 грн
100+148.19 грн
500+128.49 грн
Мінімальне замовлення: 2
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TSM60NE084CIT C0G pdf.php?pn=TSM60NE084CIT
TSM60NE084CIT C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 21A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+722.06 грн
10+476.99 грн
100+353.62 грн
500+294.91 грн
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TSM60NE084PW C0G TSM60NE084PW_A2403.pdf
TSM60NE084PW C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+667.41 грн
10+550.83 грн
300+432.03 грн
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TSM60NE069CIT C0G TSM60NE069CIT_A2403.pdf
TSM60NE069CIT C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+728.69 грн
10+601.71 грн
100+501.39 грн
500+415.18 грн
1000+373.66 грн
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TSM60NE069PW C0G TSM60NE069PW_A2403.pdf
TSM60NE069PW C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+786.65 грн
10+649.39 грн
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TSM60NE048PW C0G
TSM60NE048PW C0G
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+943.98 грн
10+800.49 грн
300+670.72 грн
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TSM60NC165CI
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
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UG54GH UG54G SERIES_F2111.pdf
UG54GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1250+15.59 грн
Мінімальне замовлення: 1250
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UG54GH UG54G SERIES_F2111.pdf
UG54GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+41.40 грн
10+34.05 грн
100+23.67 грн
500+17.34 грн
Мінімальне замовлення: 8
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TSP3H150S TSP3H150S_B2103.pdf
TSP3H150S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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TSP3H150S TSP3H150S_B2103.pdf
TSP3H150S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 3A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.78 грн
11+29.02 грн
100+20.16 грн
Мінімальне замовлення: 10
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MBR2035CT-Y MBR2035CT-Y%20SERIES_B2104.pdf
MBR2035CT-Y
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CT MBR2035CT%20SERIES_M2104.pdf
MBR2035CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR2035CTH MBR2035CT%20SERIES_M2104.pdf
MBR2035CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Qualification: AEC-Q101
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UG1005G UG1004G SERIES_B2104.pdf
UG1005G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+64.59 грн
50+50.03 грн
100+39.65 грн
500+31.54 грн
1000+25.69 грн
Мінімальне замовлення: 6
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