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SR802 A0G SR802 A0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR802HA0G SR802HA0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR809 A0G SR809 A0G Taiwan Semiconductor Corporation SR802%20SERIES_I13.pdf Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR809HA0G SR809HA0G Taiwan Semiconductor Corporation SR802%20SERIES_J2105.pdf Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR810 A0G SR810 A0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR810HA0G SR810HA0G Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
SRT12HA0G Taiwan Semiconductor Corporation SRT12%20SERIES_H13.pdf Description: DIODE SCHOTTKY 20V 1A TS-1
товар відсутній
SRT15HA0G SRT15HA0G Taiwan Semiconductor Corporation SRT12%20SERIES_I2104.pdf Description: DIODE SCHOTTKY 50V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SRT16 A0G Taiwan Semiconductor Corporation SRT12%20SERIES_H13.pdf Description: DIODE SCHOTTKY 60V 1A TS-1
товар відсутній
UG2DHA0G UG2DHA0G Taiwan Semiconductor Corporation UG2D_F2105.pdf Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB05 D2G D2SB05 D2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
D2SB05HD2G D2SB05HD2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
D2SB10 D2G D2SB10 D2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
D2SB10HD2G D2SB10HD2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
D2SB20 D2G D2SB20 D2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
D2SB20HD2G D2SB20HD2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB40 D2G D2SB40 D2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
D2SB40HD2G D2SB40HD2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB60HD2G D2SB60HD2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB80HD2G D2SB80HD2G Taiwan Semiconductor Corporation D2SB05%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DBL101G C1G DBL101G C1G Taiwan Semiconductor Corporation DBL101G%20SERIES_Q15.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBL
товар відсутній
DBL106GHC1G DBL106GHC1G Taiwan Semiconductor Corporation DBL101G%20SERIES_Q15.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBL
товар відсутній
DBL201G C1G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 50V 2A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
товар відсутній
DBL201GHC1G Taiwan Semiconductor Corporation Description: BRIDGE RECT 1PHASE 50V 2A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
Qualification: AEC-Q101
товар відсутній
DBL202G C1G DBL202G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 100V 2A DBL
товар відсутній
DBL202GHC1G DBL202GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 100V 2A DBL
товар відсутній
DBL203G C1G DBL203G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 200V 2A DBL
товар відсутній
DBL203GHC1G DBL203GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 200V 2A DBL
товар відсутній
DBL204G C1G DBL204G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBL
товар відсутній
DBL204GHC1G DBL204GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBL
товар відсутній
DBL205G C1G DBL205G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBL
товар відсутній
DBL205GHC1G DBL205GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBL
товар відсутній
DBL206G C1G DBL206G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBL
товар відсутній
DBL206GHC1G DBL206GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBL
товар відсутній
DBL207G C1G DBL207G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBL
товар відсутній
DBL207GHC1G DBL207GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBL
товар відсутній
DBL208G C1G DBL208G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBL
товар відсутній
DBL208GHC1G DBL208GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBL
товар відсутній
DBL209G C1G DBL209G C1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBL
товар відсутній
DBL209GHC1G DBL209GHC1G Taiwan Semiconductor Corporation DBL201G%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBL
товар відсутній
DBLS101G C1G DBLS101G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
DBLS101GHC1G DBLS101GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DBLS102G C1G DBLS102G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 100V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
DBLS102GHC1G DBLS102GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 100V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DBLS103G C1G DBLS103G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
DBLS103GHC1G DBLS103GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 200V 1A DBLS
товар відсутній
DBLS104G C1G DBLS104G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 400V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
DBLS104GHC1G DBLS104GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 400V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
DBLS105G C1G DBLS105G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
товар відсутній
DBLS105GHC1G DBLS105GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBLS
товар відсутній
DBLS106G C1G DBLS106G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
товар відсутній
DBLS106GHC1G DBLS106GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
товар відсутній
DBLS107G C1G DBLS107G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
товар відсутній
DBLS107GHC1G DBLS107GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
товар відсутній
DBLS151G C1G DBLS151G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
DBLS151GHC1G DBLS151GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
DBLS152G C1G DBLS152G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
DBLS152GHC1G DBLS152GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
DBLS153G C1G DBLS153G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
DBLS153GHC1G DBLS153GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
SR802 A0G SR802%20SERIES_I13.pdf
SR802 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR802HA0G SR802%20SERIES_I13.pdf
SR802HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 8A DO201AD
товар відсутній
SR809 A0G SR802%20SERIES_I13.pdf
SR809 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR809HA0G SR802%20SERIES_J2105.pdf
SR809HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 8A DO201AD
товар відсутній
SR810 A0G
SR810 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
SR810HA0G
SR810HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 8A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
SRT12HA0G SRT12%20SERIES_H13.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A TS-1
товар відсутній
SRT15HA0G SRT12%20SERIES_I2104.pdf
SRT15HA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 1A TS-1
Packaging: Tape & Box (TB)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
SRT16 A0G SRT12%20SERIES_H13.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A TS-1
товар відсутній
UG2DHA0G UG2D_F2105.pdf
UG2DHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB05 D2G D2SB05%20SERIES_K2103.pdf
D2SB05 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товар відсутній
D2SB05HD2G D2SB05%20SERIES_K2103.pdf
D2SB05HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Qualification: AEC-Q101
товар відсутній
D2SB10 D2G D2SB05%20SERIES_K2103.pdf
D2SB10 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
D2SB10HD2G D2SB05%20SERIES_K2103.pdf
D2SB10HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
D2SB20 D2G D2SB05%20SERIES_K2103.pdf
D2SB20 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товар відсутній
D2SB20HD2G D2SB05%20SERIES_K2103.pdf
D2SB20HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB40 D2G D2SB05%20SERIES_K2103.pdf
D2SB40 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товар відсутній
D2SB40HD2G D2SB05%20SERIES_K2103.pdf
D2SB40HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB60HD2G D2SB05%20SERIES_K2103.pdf
D2SB60HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
D2SB80HD2G D2SB05%20SERIES_K2103.pdf
D2SB80HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DBL101G C1G DBL101G%20SERIES_Q15.pdf
DBL101G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBL
товар відсутній
DBL106GHC1G DBL101G%20SERIES_Q15.pdf
DBL106GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
товар відсутній
DBL201G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
товар відсутній
DBL201GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
Qualification: AEC-Q101
товар відсутній
DBL202G C1G DBL201G%20SERIES_J15.pdf
DBL202G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A DBL
товар відсутній
DBL202GHC1G DBL201G%20SERIES_J15.pdf
DBL202GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A DBL
товар відсутній
DBL203G C1G DBL201G%20SERIES_J15.pdf
DBL203G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A DBL
товар відсутній
DBL203GHC1G DBL201G%20SERIES_J15.pdf
DBL203GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A DBL
товар відсутній
DBL204G C1G DBL201G%20SERIES_J15.pdf
DBL204G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBL
товар відсутній
DBL204GHC1G DBL201G%20SERIES_J15.pdf
DBL204GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBL
товар відсутній
DBL205G C1G DBL201G%20SERIES_J15.pdf
DBL205G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBL
товар відсутній
DBL205GHC1G DBL201G%20SERIES_J15.pdf
DBL205GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBL
товар відсутній
DBL206G C1G DBL201G%20SERIES_J15.pdf
DBL206G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBL
товар відсутній
DBL206GHC1G DBL201G%20SERIES_J15.pdf
DBL206GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBL
товар відсутній
DBL207G C1G DBL201G%20SERIES_J15.pdf
DBL207G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBL
товар відсутній
DBL207GHC1G DBL201G%20SERIES_J15.pdf
DBL207GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBL
товар відсутній
DBL208G C1G DBL201G%20SERIES_J15.pdf
DBL208G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBL
товар відсутній
DBL208GHC1G DBL201G%20SERIES_J15.pdf
DBL208GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBL
товар відсутній
DBL209G C1G DBL201G%20SERIES_J15.pdf
DBL209G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBL
товар відсутній
DBL209GHC1G DBL201G%20SERIES_J15.pdf
DBL209GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBL
товар відсутній
DBLS101G C1G DBLS101G%20SERIES_P2103.pdf
DBLS101G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
DBLS101GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS101GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DBLS102G C1G DBLS101G%20SERIES_P2103.pdf
DBLS102G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
DBLS102GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS102GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
DBLS103G C1G DBLS101G%20SERIES_P2103.pdf
DBLS103G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
DBLS103GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS103GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 1A DBLS
товар відсутній
DBLS104G C1G DBLS101G%20SERIES_P2103.pdf
DBLS104G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
DBLS104GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS104GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
товар відсутній
DBLS105G C1G DBLS101G%20SERIES_P2103.pdf
DBLS105G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
товар відсутній
DBLS105GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS105GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBLS
товар відсутній
DBLS106G C1G DBLS101G%20SERIES_P2103.pdf
DBLS106G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
товар відсутній
DBLS106GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS106GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
товар відсутній
DBLS107G C1G DBLS101G%20SERIES_P2103.pdf
DBLS107G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
товар відсутній
DBLS107GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS107GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
товар відсутній
DBLS151G C1G DBLS151G%20SERIES_M2103.pdf
DBLS151G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
DBLS151GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS151GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
товар відсутній
DBLS152G C1G DBLS151G%20SERIES_M2103.pdf
DBLS152G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
DBLS152GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS152GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
товар відсутній
DBLS153G C1G DBLS151G%20SERIES_M2103.pdf
DBLS153G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
DBLS153GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS153GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
товар відсутній
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