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HDBLS101G C1G HDBLS101G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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HDBLS106G C1G HDBLS106G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HDBLS107G C1G HDBLS107G C1G Taiwan Semiconductor Corporation HDBLS101G%20SERIES_G2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HER1003G C0G HER1003G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HER1004G C0G HER1004G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_H1511.pdf Description: DIODE ARRAY GP 300V 10A TO220AB
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HER1006G C0G HER1006G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_H1511.pdf Description: DIODE ARRAY GP 600V 10A TO220AB
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HER1007G C0G HER1007G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_I2104.pdf Description: DIODE ARRAY GP 800V 10A TO220AB
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HER1008G C0G HER1008G C0G Taiwan Semiconductor Corporation HER1001G%20SERIES_H1511.pdf Description: DIODE ARRAY GP 10A TO220AB
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HER1601G C0G HER1601G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: DIODE ARRAY GP 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HER1601PT C0G HER1601PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HER1602G C0G HER1602G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: DIODE ARRAY GP 100V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HER1602PT C0G HER1602PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HER1603G C0G HER1603G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: DIODE ARRAY GP 200V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HER1603PT C0G HER1603PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HER1604G C0G HER1604G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_I1511.pdf Description: DIODE ARRAY GP 300V 16A TO220AB
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HER1604PT C0G HER1604PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 300V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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HER1605G C0G HER1605G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_I1511.pdf Description: DIODE ARRAY GP 400V 16A TO220AB
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HER1605PT C0G HER1605PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 400V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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HER1606G C0G HER1606G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: DIODE ARRAY GP 600V 16A TO220AB
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HER1606PT C0G HER1606PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 600V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HER1607G C0G HER1607G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_I1511.pdf Description: DIODE ARRAY GP 800V 16A TO220AB
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HER1607PT C0G HER1607PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_H2103.pdf Description: DIODE ARRAY GP 800V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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HER1608G C0G HER1608G C0G Taiwan Semiconductor Corporation HER1601G%20SERIES_I1511.pdf Description: DIODE ARRAY GP 16A TO220AB
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HER1608PT C0G HER1608PT C0G Taiwan Semiconductor Corporation HER1601PT%20SERIES_G1601.pdf Description: DIODE ARRAY GP 16A TO247AD
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HERAF1003G C0G HERAF1003G C0G Taiwan Semiconductor Corporation HERAF1001G%20SERIES_H1511.pdf Description: DIODE GEN PURP 200V 10A ITO220AC
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HERAF1605G C0G HERAF1605G C0G Taiwan Semiconductor Corporation HERAF1601G%20SERIES_J1512.pdf Description: DIODE GEN PURP 400V 16A ITO220AC
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HERF1001G C0G HERF1001G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HERF1002G C0G HERF1002G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 100V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HERF1003G C0G HERF1003G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HERF1004G C0G HERF1004G C0G Taiwan Semiconductor Corporation HERF1001G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 300V ITO-220AB
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HERF1005G C0G HERF1005G C0G Taiwan Semiconductor Corporation HERF1001G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 400V ITO-220AB
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HERF1006G C0G HERF1006G C0G Taiwan Semiconductor Corporation HERF1001G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 600V ITO-220AB
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HERF1007G C0G HERF1007G C0G Taiwan Semiconductor Corporation HERF1001G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 800V ITO-220AB
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HERF1007GA C0G HERF1007GA C0G Taiwan Semiconductor Corporation HERF1007GA%20SERIES_B2105.pdf Description: DIODE ARRAY GP 800V ITO-220AB
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HERF1008G C0G HERF1008G C0G Taiwan Semiconductor Corporation HERF1001G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 10A ITO-220AB
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HERF1008GA C0G HERF1008GA C0G Taiwan Semiconductor Corporation HERF1007GA%20SERIES_B2105.pdf Description: DIODE ARRAY GP 10A ITO-220AB
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HERF1601G C0G HERF1601G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 50V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HERF1602G C0G HERF1602G C0G Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 100V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HERF1603G C0G HERF1603G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HERF1604G C0G HERF1604G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 300V ITO-220AB
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HERF1605G C0G HERF1605G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 400V ITO-220AB
на замовлення 898 шт:
термін постачання 21-31 дні (днів)
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HERF1606G C0G HERF1606G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 600V ITO-220AB
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HERF1607G C0G HERF1607G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 800V ITO-220AB
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HERF1608G C0G HERF1608G C0G Taiwan Semiconductor Corporation HERF1601G%20SERIES_I2105.pdf Description: DIODE ARRAY GP 16A ITO-220AB
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MBR10100 C0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE SCHOTTKY 100V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR10100CT C0G MBR10100CT C0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
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MBR10100CTHC0G MBR10100CTHC0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARRAY SCHOTTKY 100V TO220
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MBR10150 C0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE STANDARD 150V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBR10150CTHC0G MBR10150CTHC0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBR10150HC0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE STANDARD 150V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBR10200 C0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE STANDARD 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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MBR10200CT C0G MBR10200CT C0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARRAY SCHOTTKY 200V TO220
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MBR10200CTHC0G MBR10200CTHC0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARRAY SCHOTTKY 200V TO220
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MBR10200HC0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1035 C0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE STANDARD 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR1035CT C0G MBR1035CT C0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR1035CTHC0G MBR1035CTHC0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1035HC0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE GEN PURP 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1045 C0G Taiwan Semiconductor Corporation MBR1035%20SERIES_M2103.pdf Description: DIODE STANDARD 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR1045CT C0G MBR1045CT C0G Taiwan Semiconductor Corporation MBR1035CT%20SERIES_O2104.pdf Description: DIODE ARRAY SCHOTTKY 45V TO220AB
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HDBLS101G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS101G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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HDBLS106G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS106G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HDBLS107G C1G HDBLS101G%20SERIES_G2103.pdf
HDBLS107G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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HER1003G C0G
HER1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HER1004G C0G HER1001G%20SERIES_H1511.pdf
HER1004G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 10A TO220AB
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HER1006G C0G HER1001G%20SERIES_H1511.pdf
HER1006G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 10A TO220AB
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HER1007G C0G HER1001G%20SERIES_I2104.pdf
HER1007G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 10A TO220AB
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HER1008G C0G HER1001G%20SERIES_H1511.pdf
HER1008G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 10A TO220AB
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HER1601G C0G HER1601G%20SERIES_J2104.pdf
HER1601G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HER1601PT C0G HER1601PT%20SERIES_H2103.pdf
HER1601PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HER1602G C0G HER1601G%20SERIES_J2104.pdf
HER1602G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HER1602PT C0G HER1601PT%20SERIES_H2103.pdf
HER1602PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HER1603G C0G HER1601G%20SERIES_J2104.pdf
HER1603G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HER1603PT C0G HER1601PT%20SERIES_H2103.pdf
HER1603PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HER1604G C0G HER1601G%20SERIES_I1511.pdf
HER1604G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 16A TO220AB
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HER1604PT C0G HER1601PT%20SERIES_H2103.pdf
HER1604PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 300 V
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HER1605G C0G HER1601G%20SERIES_I1511.pdf
HER1605G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A TO220AB
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HER1605PT C0G HER1601PT%20SERIES_H2103.pdf
HER1605PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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HER1606G C0G HER1601G%20SERIES_J2104.pdf
HER1606G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 16A TO220AB
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HER1606PT C0G HER1601PT%20SERIES_H2103.pdf
HER1606PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HER1607G C0G HER1601G%20SERIES_I1511.pdf
HER1607G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
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HER1607PT C0G HER1601PT%20SERIES_H2103.pdf
HER1607PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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HER1608G C0G HER1601G%20SERIES_I1511.pdf
HER1608G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A TO220AB
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HER1608PT C0G HER1601PT%20SERIES_G1601.pdf
HER1608PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A TO247AD
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HERAF1003G C0G HERAF1001G%20SERIES_H1511.pdf
HERAF1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A ITO220AC
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HERAF1605G C0G HERAF1601G%20SERIES_J1512.pdf
HERAF1605G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 16A ITO220AC
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HERF1001G C0G
HERF1001G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HERF1002G C0G
HERF1002G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HERF1003G C0G
HERF1003G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 10A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HERF1004G C0G HERF1001G%20SERIES_I2105.pdf
HERF1004G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V ITO-220AB
товару немає в наявності
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HERF1005G C0G HERF1001G%20SERIES_I2105.pdf
HERF1005G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V ITO-220AB
товару немає в наявності
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HERF1006G C0G HERF1001G%20SERIES_I2105.pdf
HERF1006G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V ITO-220AB
товару немає в наявності
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HERF1007G C0G HERF1001G%20SERIES_I2105.pdf
HERF1007G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V ITO-220AB
товару немає в наявності
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HERF1007GA C0G HERF1007GA%20SERIES_B2105.pdf
HERF1007GA C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V ITO-220AB
товару немає в наявності
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HERF1008G C0G HERF1001G%20SERIES_I2105.pdf
HERF1008G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 10A ITO-220AB
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HERF1008GA C0G HERF1007GA%20SERIES_B2105.pdf
HERF1008GA C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 10A ITO-220AB
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HERF1601G C0G HERF1601G%20SERIES_I2105.pdf
HERF1601G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 50V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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HERF1602G C0G
HERF1602G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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HERF1603G C0G HERF1601G%20SERIES_I2105.pdf
HERF1603G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 200V 16A ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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HERF1604G C0G HERF1601G%20SERIES_I2105.pdf
HERF1604G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 300V ITO-220AB
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HERF1605G C0G HERF1601G%20SERIES_I2105.pdf
HERF1605G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 400V ITO-220AB
на замовлення 898 шт:
термін постачання 21-31 дні (днів)
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HERF1606G C0G HERF1601G%20SERIES_I2105.pdf
HERF1606G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 600V ITO-220AB
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HERF1607G C0G HERF1601G%20SERIES_I2105.pdf
HERF1607G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V ITO-220AB
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HERF1608G C0G HERF1601G%20SERIES_I2105.pdf
HERF1608G C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A ITO-220AB
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В кошику  од. на суму  грн.
MBR10100 C0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR10100CT C0G MBR1035CT%20SERIES_O2104.pdf
MBR10100CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
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MBR10100CTHC0G MBR1035CT%20SERIES_O2104.pdf
MBR10100CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 100V TO220
товару немає в наявності
В кошику  од. на суму  грн.
MBR10150 C0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 150V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBR10150CTHC0G MBR1035CT%20SERIES_O2104.pdf
MBR10150CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MBR10150HC0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 150V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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MBR10200 C0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
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MBR10200CT C0G MBR1035CT%20SERIES_O2104.pdf
MBR10200CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V TO220
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MBR10200CTHC0G MBR1035CT%20SERIES_O2104.pdf
MBR10200CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 200V TO220
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MBR10200HC0G MBR1035CT%20SERIES_O2104.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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MBR1035 C0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR1035CT C0G MBR1035CT%20SERIES_O2104.pdf
MBR1035CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
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MBR1035CTHC0G MBR1035CT%20SERIES_O2104.pdf
MBR1035CTHC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MBR1035HC0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 35V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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MBR1045 C0G MBR1035%20SERIES_M2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 45V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MBR1045CT C0G MBR1035CT%20SERIES_O2104.pdf
MBR1045CT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTTKY 45V TO220AB
товару немає в наявності
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