Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (22668) > Сторінка 98 з 378
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SA33AHA0G | Taiwan Semiconductor Corporation |
 Description: TVS DIODE 33VWM 71.4VC DO204ACPackaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 9.8A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 71.4V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
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SA33CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33V 71.4V DO204AC |
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SA33CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33V 71.4V DO204AC |
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SA36A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36V 58.1V DO204AC |
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SA36AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36V 58.1V DO204AC |
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SA36CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 36V 58.1V DO204AC |
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SA45A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 45V 72.7V DO204AC |
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SA5.0A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5V 9.2V DO204AC |
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SA5.0AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5V 9.2V DO204AC |
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SA5.0CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5V 9.2V DO204AC |
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SA5.0CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 5V 9.2V DO204AC |
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SA54A A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 54V 87.1V DO204AC |
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SA54AHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 54V 87.1V DO204AC |
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SA54CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 54V 87.1V DO204AC |
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SA54CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 54V 87.1V DO204AC |
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SA6.0CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6V 10.3V DO204AC |
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SA6.0CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 6V 10.3V DO204AC |
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SA64CA A0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64V 103V DO204AC |
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SA64CAHA0G | Taiwan Semiconductor Corporation |
Description: TVS DIODE 64V 103V DO204AC |
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SF24GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
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SF26GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
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SF27G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 500 V |
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SF27GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 500 V Qualification: AEC-Q101 |
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SF28GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
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SF34GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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SF36GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
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SF37G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 3A DO201AD |
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SF37GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 500V 3A DO201AD |
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SF41G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 4A DO201AD |
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SF41GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 50V 4A DO201AD |
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SF48G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 4A DO201AD |
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SF62G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 6A DO201AD |
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SF64GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 200V 6A DO201AD |
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SF65G A0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 6A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
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SF65GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 300V 6A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V Qualification: AEC-Q101 |
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SF66GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 400V 6A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 50pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
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SF68GHA0G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 6A DO201AD |
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SK15H45 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 15A R-6 Packaging: Tape & Box (TB) Package / Case: R-6, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 15A Supplier Device Package: R-6 Operating Temperature - Junction: 200°C (Max) Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A Current - Reverse Leakage @ Vr: 150 µA @ 45 V |
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| SK20H45 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 45V 20A R-6 |
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SR1502 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 15A R-6 |
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| SR1504 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 15A R-6 |
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SR202 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 2A DO204AC |
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SR202HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 2A DO204AC |
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SR204HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A DO204AC Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
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SR220 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 2A DO204AC |
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SR220HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 2A DO204AC |
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SR302 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SR302HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
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SR304HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A DO201AD |
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SR306HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
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SR310HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Qualification: AEC-Q101 |
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SR320HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
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SR502 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 20V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 20 V |
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SR504HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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SR505 A0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
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SR505HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 50V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
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SR506HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
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SR510HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 100V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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SR515HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 150V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 |
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SR520HA0G | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 200V 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 |
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| SA33AHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33VWM 71.4VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 9.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 71.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 33VWM 71.4VC DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 9.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 71.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
товар відсутній
| SA33CA A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33V 71.4V DO204AC
Description: TVS DIODE 33V 71.4V DO204AC
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| SA33CAHA0G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33V 71.4V DO204AC
Description: TVS DIODE 33V 71.4V DO204AC
товар відсутній
| SA36A A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO204AC
Description: TVS DIODE 36V 58.1V DO204AC
товар відсутній
| SA36AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO204AC
Description: TVS DIODE 36V 58.1V DO204AC
товар відсутній
| SA36CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36V 58.1V DO204AC
Description: TVS DIODE 36V 58.1V DO204AC
товар відсутній
| SA45A A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 45V 72.7V DO204AC
Description: TVS DIODE 45V 72.7V DO204AC
товар відсутній
| SA5.0A A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5V 9.2V DO204AC
Description: TVS DIODE 5V 9.2V DO204AC
товар відсутній
| SA5.0AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5V 9.2V DO204AC
Description: TVS DIODE 5V 9.2V DO204AC
товар відсутній
| SA5.0CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5V 9.2V DO204AC
Description: TVS DIODE 5V 9.2V DO204AC
товар відсутній
| SA5.0CAHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5V 9.2V DO204AC
Description: TVS DIODE 5V 9.2V DO204AC
товар відсутній
| SA54A A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54V 87.1V DO204AC
Description: TVS DIODE 54V 87.1V DO204AC
товар відсутній
| SA54AHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54V 87.1V DO204AC
Description: TVS DIODE 54V 87.1V DO204AC
товар відсутній
| SA54CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54V 87.1V DO204AC
Description: TVS DIODE 54V 87.1V DO204AC
товар відсутній
| SA54CAHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 54V 87.1V DO204AC
Description: TVS DIODE 54V 87.1V DO204AC
товар відсутній
| SA6.0CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6V 10.3V DO204AC
Description: TVS DIODE 6V 10.3V DO204AC
товар відсутній
| SA6.0CAHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 6V 10.3V DO204AC
Description: TVS DIODE 6V 10.3V DO204AC
товар відсутній
| SA64CA A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO204AC
Description: TVS DIODE 64V 103V DO204AC
товар відсутній
| SA64CAHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 64V 103V DO204AC
Description: TVS DIODE 64V 103V DO204AC
товар відсутній
| SF24GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 200V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 2
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
| SF26GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
| SF27G A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
товар відсутній
| SF27GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 500V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Qualification: AEC-Q101
товар відсутній
| SF28GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
| SF34GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товар відсутній
| SF36GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товар відсутній
| SF37G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 3A DO201AD
Description: DIODE GEN PURP 500V 3A DO201AD
товар відсутній
| SF37GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 500V 3A DO201AD
Description: DIODE GEN PURP 500V 3A DO201AD
товар відсутній
| SF41G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 4A DO201AD
Description: DIODE GEN PURP 50V 4A DO201AD
товар відсутній
| SF41GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 4A DO201AD
Description: DIODE GEN PURP 50V 4A DO201AD
товар відсутній
| SF48G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 4A DO201AD
Description: DIODE GEN PURP 600V 4A DO201AD
товар відсутній
| SF62G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A DO201AD
Description: DIODE GEN PURP 100V 6A DO201AD
товар відсутній
| SF64GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 6A DO201AD
Description: DIODE GEN PURP 200V 6A DO201AD
товар відсутній
| SF65G A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE GEN PURP 300V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товар відсутній
| SF65GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 300V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 300V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Qualification: AEC-Q101
товар відсутній
| SF66GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 6A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
| SF68GHA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A DO201AD
Description: DIODE GEN PURP 600V 6A DO201AD
товар відсутній
| SK15H45 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 15A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: R-6
Operating Temperature - Junction: 200°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
Description: DIODE SCHOTTKY 45V 15A R-6
Packaging: Tape & Box (TB)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: R-6
Operating Temperature - Junction: 200°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 15 A
Current - Reverse Leakage @ Vr: 150 µA @ 45 V
товар відсутній
| SK20H45 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 45V 20A R-6
Description: DIODE SCHOTTKY 45V 20A R-6
товар відсутній
| SR1502 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 15A R-6
Description: DIODE SCHOTTKY 20V 15A R-6
товар відсутній
| SR1504 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 15A R-6
Description: DIODE SCHOTTKY 40V 15A R-6
товар відсутній
| SR202 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO204AC
Description: DIODE SCHOTTKY 20V 2A DO204AC
товар відсутній
| SR202HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO204AC
Description: DIODE SCHOTTKY 20V 2A DO204AC
товар відсутній
| SR204HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
товар відсутній
| SR220 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A DO204AC
Description: DIODE SCHOTTKY 200V 2A DO204AC
товар відсутній
| SR220HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 2A DO204AC
Description: DIODE SCHOTTKY 200V 2A DO204AC
товар відсутній
| SR302 A0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 13.49 грн |
| 1000+ | 8.84 грн |
| 2500+ | 8.13 грн |
| SR302HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
| SR304HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A DO201AD
Description: DIODE SCHOTTKY 40V 3A DO201AD
товар відсутній
| SR306HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SR310HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
| SR320HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
| SR502 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
Description: DIODE SCHOTTKY 20V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 20 V
товар відсутній
| SR504HA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SR505 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
| SR505HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
товар відсутній
| SR506HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SR510HA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 100V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
| SR515HA0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 150V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
товар відсутній
| SR520HA0G |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
товар відсутній