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DBLS205G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS204G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS208G TAIWAN SEMICONDUCTOR DBLS201G_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.2kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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SMA4F60AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 4.1A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 67.1...74.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F12AH TAIWAN SEMICONDUCTOR SMA4F12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 20.5A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 13.4...14.8V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F15AH TAIWAN SEMICONDUCTOR SMA4F12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.8÷18.5V; 16.4A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 16.4A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 16.8...18.5V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F18AH TAIWAN SEMICONDUCTOR SMA4F12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.1÷22.2V; 13.7A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 13.7A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 20.1...22.2V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F24AH TAIWAN SEMICONDUCTOR SMA4F12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.8÷29.6V; 10.3A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.3A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 26.8...29.6V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F30AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.5÷37.1V; 8.2A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 8.2A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 33.5...37.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F33AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.9÷40.8V; 7.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 33V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 7.5A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 36.9...40.8V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F36AH TAIWAN SEMICONDUCTOR SMA4F12AH SERIES_C2103.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40.2÷44.5V; 6.8A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 6.8A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 40.2...44.5V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F39AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 43.6÷48.2V; 6.3A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 6.3A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 43.6...48.2V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F43AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 48.1÷53.1V; 5.7A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 43V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5.7A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 48.1...53.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F47AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 52.5÷58.1V; 5.2A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 47V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5.2A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 52.5...58.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F56AH TAIWAN SEMICONDUCTOR Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 62.6÷69.2V; 4.4A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 4.4A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 62.6...69.2V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SFF1604GH TAIWAN SEMICONDUCTOR SFF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
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SFF1606GH TAIWAN SEMICONDUCTOR SFF1601G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
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SFF1608GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
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GBPC2501 TAIWAN SEMICONDUCTOR GBPC15_25_35_ser.pdf Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Case: GBPC
Leads: connectors FASTON
Kind of package: in-tray
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
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SMAJ18CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d description Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188A TAIWAN SEMICONDUCTOR SMAJ SERIES_U2102.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ15A TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MBRF20H100CT TAIWAN SEMICONDUCTOR MBRF20H100CT SERIES_I2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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BZX84C2V7 RFG BZX84C2V7 RFG TAIWAN SEMICONDUCTOR BZX84C2V4%20SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5970 шт:
термін постачання 14-30 дні (днів)
45+10.30 грн
75+5.77 грн
100+4.60 грн
500+4.41 грн
Мінімальне замовлення: 45
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BZX55C2V7 R0G BZX55C2V7 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
на замовлення 564 шт:
термін постачання 14-30 дні (днів)
36+12.65 грн
50+8.48 грн
100+5.05 грн
250+4.05 грн
500+3.42 грн
Мінімальне замовлення: 36
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BZT52C2V7 RHG BZT52C2V7 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
105+4.34 грн
145+2.94 грн
250+2.64 грн
Мінімальне замовлення: 105
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BZX55C2V7 R0 BZX55C2V7 R0 TAIWAN SEMICONDUCTOR BZX55C10-R0.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
111+4.09 грн
153+2.75 грн
500+2.40 грн
Мінімальне замовлення: 111
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SMAJ24CA TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24CAH TAIWAN SEMICONDUCTOR eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24AH TAIWAN SEMICONDUCTOR SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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P4KE440A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE440CA TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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1N4148 A0G 1N4148 A0G TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Max. load current: 0.45A
на замовлення 1252 шт:
термін постачання 14-30 дні (днів)
63+7.23 грн
87+4.87 грн
162+2.59 грн
500+1.69 грн
1000+1.43 грн
Мінімальне замовлення: 63
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SMAJ58A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1N4746A TAIWAN SEMICONDUCTOR 1n4736at-d.pdf 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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MUR120S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZV55C2V4 L0G BZV55C2V4 L0G TAIWAN SEMICONDUCTOR BZV55C2V4%20SERIES_H2301.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)
39+11.75 грн
57+7.47 грн
100+4.82 грн
250+4.04 грн
500+3.54 грн
1000+3.37 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BZT52B6V8S RRG BZT52B6V8S RRG TAIWAN SEMICONDUCTOR BZT52B2V4S SERIES_H2212.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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BZT52B6V8 RHG TAIWAN SEMICONDUCTOR BZT52B2V4 series_F15.pdf Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.8V; SMD; SOD123F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+2.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZX55C6V2 R0G BZX55C6V2 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
34+13.56 грн
47+8.98 грн
100+5.36 грн
250+4.31 грн
500+3.63 грн
1000+3.05 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
BZX55C6V2 R0 BZX55C6V2 R0 TAIWAN SEMICONDUCTOR BZX55C10-R0.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
118+3.86 грн
163+2.58 грн
Мінімальне замовлення: 118
В кошику  од. на суму  грн.
BZX55C7V5 R0G BZX55C7V5 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
130+3.57 грн
155+2.73 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
BZX55C8V2 R0G BZX55C8V2 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1155 шт:
термін постачання 14-30 дні (днів)
130+3.57 грн
155+2.73 грн
500+2.40 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
BZX55C9V1 R0G BZX55C9V1 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
на замовлення 446 шт:
термін постачання 14-30 дні (днів)
39+11.75 грн
58+7.30 грн
100+4.41 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
SMBJ26A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ58A TAIWAN SEMICONDUCTOR SMBJ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ58AH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMCJ15CA TAIWAN SEMICONDUCTOR SMCJ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ15CA R5G TAIWAN SEMICONDUCTOR SMBJ%20SERIES_R2104.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
3400+11.21 грн
Мінімальне замовлення: 3400
В кошику  од. на суму  грн.
GBU405 GBU405 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
5+92.19 грн
10+54.80 грн
20+47.84 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
GBU407 GBU407 TAIWAN SEMICONDUCTOR GBU407_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
5+92.19 грн
10+54.55 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMBJ33CAH TAIWAN SEMICONDUCTOR SMBJH.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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1N4448 A0G 1N4448 A0G TAIWAN SEMICONDUCTOR 1N4148%20SERIES_J1804.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2438 шт:
термін постачання 14-30 дні (днів)
32+14.46 грн
35+12.03 грн
40+10.74 грн
59+7.12 грн
100+6.40 грн
250+3.57 грн
500+3.21 грн
1000+2.67 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1N4448 A0 1N4448 A0 TAIWAN SEMICONDUCTOR 1N4448.pdf Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
32+14.46 грн
35+12.03 грн
40+10.74 грн
59+7.12 грн
100+6.40 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
KBU1006G KBU1006G TAIWAN SEMICONDUCTOR KBU1007G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
3+161.78 грн
10+102.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBU1007G TAIWAN SEMICONDUCTOR KBU1007G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU1004G TAIWAN SEMICONDUCTOR KBU1007G_ser.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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DBLS205G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.6kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS204G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 50A; DBLS
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.15V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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DBLS208G DBLS201G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; If: 2A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Max. forward voltage: 1.3V
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 1.2kV
Type of bridge rectifier: single-phase
Electrical mounting: SMT
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SMA4F60AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 67.1÷74.1V; 4.1A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 60V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 4.1A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 67.1...74.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F12AH SMA4F12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 20.5A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 13.4...14.8V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F15AH SMA4F12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.8÷18.5V; 16.4A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 15V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 16.4A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 16.8...18.5V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F18AH SMA4F12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 20.1÷22.2V; 13.7A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 18V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 13.7A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 20.1...22.2V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F24AH SMA4F12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 26.8÷29.6V; 10.3A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 10.3A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 26.8...29.6V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F30AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.5÷37.1V; 8.2A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 8.2A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 33.5...37.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F33AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36.9÷40.8V; 7.5A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 33V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 7.5A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 36.9...40.8V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F36AH SMA4F12AH SERIES_C2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 40.2÷44.5V; 6.8A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 6.8A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 40.2...44.5V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F39AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 43.6÷48.2V; 6.3A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 39V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 6.3A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 43.6...48.2V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F43AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 48.1÷53.1V; 5.7A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 43V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5.7A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 48.1...53.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F47AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 52.5÷58.1V; 5.2A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 47V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 5.2A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 52.5...58.1V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SMA4F56AH
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 62.6÷69.2V; 4.4A; unidirectional; ±5%; SMA flat
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 56V
Semiconductor structure: unidirectional
Case: SMA flat
Max. forward impulse current: 4.4A
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Breakdown voltage: 62.6...69.2V
Peak pulse power dissipation: 0.4kW
Manufacturer series: SMA4F
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SFF1604GH SFF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
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SFF1606GH SFF1601G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
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SFF1608GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: superfast switching
Reverse recovery time: 35ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
Application: automotive industry
Semiconductor structure: common cathode; double
Case: ITO220AB
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GBPC2501 GBPC15_25_35_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; Ufmax: 1.1V; If: 25A
Version: square
Electrical mounting: THT
Features of semiconductor devices: glass passivated
Case: GBPC
Leads: connectors FASTON
Kind of package: in-tray
Max. forward voltage: 1.1V
Load current: 25A
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Max. forward impulse current: 0.3kA
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SMAJ18CA description tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20V; 13.7A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 13.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188A SMAJ SERIES_U2102.pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ188CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209V; 0.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209V
Max. forward impulse current: 0.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMCJ15A SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MBRF20H100CT MBRF20H100CT SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Kind of package: tube
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BZX84C2V7 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C2V7 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
на замовлення 5970 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
45+10.30 грн
75+5.77 грн
100+4.60 грн
500+4.41 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
BZX55C2V7 R0G
BZX55C2V7 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
на замовлення 564 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
36+12.65 грн
50+8.48 грн
100+5.05 грн
250+4.05 грн
500+3.42 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
BZT52C2V7 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C2V7 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 960 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
105+4.34 грн
145+2.94 грн
250+2.64 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZX55C2V7 R0 BZX55C10-R0.pdf
BZX55C2V7 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
на замовлення 500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
111+4.09 грн
153+2.75 грн
500+2.40 грн
Мінімальне замовлення: 111
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SMAJ24CA tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24CAH eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Application: automotive industry
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ24AH SMAJH SERIES_A2102.pdf eaton-smaje-automotive-tvs-diode-power-esd-suppressor-data-sheet-elx1062-en.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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P4KE440A littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 418V; 0.69A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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P4KE440CA littelfuse_tvs_diode_p4ke_datasheet.pdf?assetguid=9d68a9f4-5b44-447b-b9f9-0a1c5386b383 P4KE%20SERIES%20N0220%20REV.B.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.69A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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1N4148 A0G 1N4448.pdf
1N4148 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Max. load current: 0.45A
на замовлення 1252 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
63+7.23 грн
87+4.87 грн
162+2.59 грн
500+1.69 грн
1000+1.43 грн
Мінімальне замовлення: 63
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SMAJ58A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1N4746A 1n4736at-d.pdf 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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MUR120S MUR105S SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH MUR105SH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZV55C2V4 L0G BZV55C2V4%20SERIES_H2301.pdf
BZV55C2V4 L0G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.75 грн
57+7.47 грн
100+4.82 грн
250+4.04 грн
500+3.54 грн
1000+3.37 грн
Мінімальне замовлення: 39
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BZT52B6V8S RRG BZT52B2V4S SERIES_H2212.pdf
BZT52B6V8S RRG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 6.8V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
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BZT52B6V8 RHG BZT52B2V4 series_F15.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 6.8V; SMD; SOD123F
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD123F
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+2.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZX55C6V2 R0G
BZX55C6V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
34+13.56 грн
47+8.98 грн
100+5.36 грн
250+4.31 грн
500+3.63 грн
1000+3.05 грн
Мінімальне замовлення: 34
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BZX55C6V2 R0 BZX55C10-R0.pdf
BZX55C6V2 R0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
118+3.86 грн
163+2.58 грн
Мінімальне замовлення: 118
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BZX55C7V5 R0G
BZX55C7V5 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
130+3.57 грн
155+2.73 грн
Мінімальне замовлення: 130
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BZX55C8V2 R0G
BZX55C8V2 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1155 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
130+3.57 грн
155+2.73 грн
500+2.40 грн
Мінімальне замовлення: 130
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BZX55C9V1 R0G
BZX55C9V1 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO35
Semiconductor structure: single diode
на замовлення 446 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
39+11.75 грн
58+7.30 грн
100+4.41 грн
Мінімальне замовлення: 39
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SMBJ26A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ26AH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMBJ58A SMBJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ58AH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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SMCJ15CA SMCJ.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 16.7÷18.5V; 64A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 64A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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SMBJ15CA R5G SMBJ%20SERIES_R2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3400+11.21 грн
Мінімальне замовлення: 3400
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GBU405 GBU407_ser.pdf
GBU405
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+92.19 грн
10+54.80 грн
20+47.84 грн
Мінімальне замовлення: 5
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GBU407 GBU407_ser.pdf
GBU407
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+92.19 грн
10+54.55 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
SMBJ33CAH SMBJH.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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1N4448 A0G 1N4148%20SERIES_J1804.pdf
1N4448 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2438 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.46 грн
35+12.03 грн
40+10.74 грн
59+7.12 грн
100+6.40 грн
250+3.57 грн
500+3.21 грн
1000+2.67 грн
Мінімальне замовлення: 32
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1N4448 A0 1N4448.pdf
1N4448 A0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 135 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
32+14.46 грн
35+12.03 грн
40+10.74 грн
59+7.12 грн
100+6.40 грн
Мінімальне замовлення: 32
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KBU1006G KBU1007G_ser.pdf
KBU1006G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+161.78 грн
10+102.39 грн
Мінімальне замовлення: 3
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KBU1007G KBU1007G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU1004G KBU1007G_ser.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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