Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (49653) > Сторінка 815 з 828
| Фото | Назва | Виробник | Інформація |
Доступність |
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| P4KE440CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE Type of diode: TVS Breakdown voltage: 418V Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE Max. forward impulse current: 0.69A Max. off-state voltage: 376V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4148 A0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Kind of package: Ammo Pack Max. forward impulse current: 2A Case: DO35 Max. forward voltage: 1V Reverse recovery time: 4ns Capacitance: 4pF Max. load current: 0.45A |
на замовлення 452 шт: термін постачання 14-30 дні (днів) |
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| SMAJ58A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 4.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 1N4746A | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1W; 18V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 18V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MUR120S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Max. forward voltage: 0.875V Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| MUR120SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Max. forward voltage: 0.875V Reverse recovery time: 25ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZV55C2V4 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2.4V; SMD; MiniMELF glass; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.4V Mounting: SMD Tolerance: ±5% Case: MiniMELF glass Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 6833 шт: термін постачання 14-30 дні (днів) |
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BZX55C6V2 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 1421 шт: термін постачання 14-30 дні (днів) |
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BZX55C6V2 R0 | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 230 шт: термін постачання 14-30 дні (днів) |
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BZX55C7V5 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 155 шт: термін постачання 14-30 дні (днів) |
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BZX55C9V1 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 899 шт: термін постачання 14-30 дні (днів) |
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| SMBJ26A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ26AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 14.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ58A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ58AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 6.7A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ15CA R5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 25.1A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Number of channels: 1 |
на замовлення 7650 шт: термін постачання 14-30 дні (днів) |
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GBU405 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 4A Max. forward impulse current: 80A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 96 шт: термін постачання 14-30 дні (днів) |
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GBU407 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 80A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 104 шт: термін постачання 14-30 дні (днів) |
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| SMBJ33CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 11.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1N4448 A0G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: reel; tape |
на замовлення 2318 шт: термін постачання 14-30 дні (днів) |
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1N4448 A0 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. load current: 0.45A Max. forward impulse current: 2A Kind of package: Ammo Pack |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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| SMAJ58CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 58V Breakdown voltage: 64.4V Max. forward impulse current: 4.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| DBLS152G | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A Case: DBLS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.1V Load current: 1.5A Max. forward impulse current: 50A Max. off-state voltage: 0.1kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1.5KE16A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 160V; 66.7A; unidirectional; ±5%; DO201; 1.5KE Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 16V Breakdown voltage: 160V Max. forward impulse current: 66.7A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Manufacturer series: 1.5KE Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| US1DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Features of semiconductor devices: superfast switching Semiconductor structure: single diode Capacitance: 10pF Reverse recovery time: 75ns Max. forward voltage: 1V Load current: 1A Max. forward impulse current: 30A Max. off-state voltage: 200V Kind of package: reel; tape Application: automotive industry Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SF1004GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns Mounting: THT Case: TO220AB Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 200V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SF1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns Mounting: THT Case: TO220AB Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 300V Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SF1006GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns Mounting: THT Case: TO220AB Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Type of diode: rectifying Reverse recovery time: 35ns Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 0.4kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ5.0CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1.6mA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 353 шт: термін постачання 14-30 дні (днів) |
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| BAT43W RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 1V Max. load current: 0.5A Max. forward impulse current: 4A Kind of package: reel; tape Capacitance: 10pF Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ20CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 19.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2524 шт: термін постачання 14-30 дні (днів) |
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| SMBJ20A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 19.4A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TSCDF06065G1 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube Kind of package: tube Case: ITO220AC Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Mounting: THT Load current: 6A Max. off-state voltage: 650V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GA | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES2GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ABS15J | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 0.6kV Case: ABS |
на замовлення 323 шт: термін постачання 14-30 дні (днів) |
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ABS15M | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 40A; ABS Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 1kV Case: ABS |
на замовлення 485 шт: термін постачання 14-30 дні (днів) |
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BZX85C10 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 305 шт: термін постачання 14-30 дні (днів) |
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BZX85C24 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 24V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 24V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 178 шт: термін постачання 14-30 дні (днів) |
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| HER1005GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: TO220AB Reverse recovery time: 50ns Application: automotive industry Max. load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMCJ12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 13.3÷14.7V; 79A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 79A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMBJ12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
на замовлення 2164 шт: термін постачання 14-30 дні (днів) |
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| SMCJ28A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SK26A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 3799 шт: термін постачання 14-30 дні (днів) |
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| SK26AH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SK26AHR3G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD Type of diode: Schottky rectifying Case: DO214AC; SMA Mounting: SMD Max. forward voltage: 0.7V Leakage current: 0.5mA |
на замовлення 244800 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
на замовлення 920 шт: термін постачання 14-30 дні (днів) |
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BZT52C5V6 RH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
на замовлення 690 шт: термін постачання 14-30 дні (днів) |
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GBPC5008 | TAIWAN SEMICONDUCTOR |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 50A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 50A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: in-tray |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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| MBRAD8100H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.85V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMA6J26A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 28.9V; 14.7A; unidirectional; SMA; reel,tape Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMA Semiconductor structure: unidirectional Manufacturer series: SMA6J Max. forward impulse current: 14.7A Max. off-state voltage: 26V Breakdown voltage: 28.9V Peak pulse power dissipation: 0.6kW |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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| HER1604GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns Case: TO220AB Mounting: THT Application: automotive industry Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| HER1604PTH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry Case: TO3P Mounting: THT Application: automotive industry Type of diode: rectifying Reverse recovery time: 50ns Load current: 8A x2 Max. load current: 16A Max. off-state voltage: 300V Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching |
товару немає в наявності |
В кошику од. на суму грн. |
| P4KE440CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Max. forward impulse current: 0.69A
Max. off-state voltage: 376V
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.69A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Breakdown voltage: 418V
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Max. forward impulse current: 0.69A
Max. off-state voltage: 376V
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| 1N4148 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Max. load current: 0.45A
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Kind of package: Ammo Pack
Max. forward impulse current: 2A
Case: DO35
Max. forward voltage: 1V
Reverse recovery time: 4ns
Capacitance: 4pF
Max. load current: 0.45A
на замовлення 452 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.29 грн |
| 87+ | 4.91 грн |
| 162+ | 2.62 грн |
| SMAJ58A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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В кошику
од. на суму грн.
| 1N4746A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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В кошику
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| MUR120S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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од. на суму грн.
| MUR120SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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В кошику
од. на суму грн.
| BZV55C2V4 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; MiniMELF glass; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF glass
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.4V; SMD; MiniMELF glass; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF glass
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 6833 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.85 грн |
| 57+ | 7.53 грн |
| 100+ | 4.86 грн |
| 250+ | 4.07 грн |
| 500+ | 3.57 грн |
| 1000+ | 3.42 грн |
| BZX55C6V2 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 1421 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.67 грн |
| 47+ | 9.06 грн |
| 100+ | 5.41 грн |
| 250+ | 4.34 грн |
| 500+ | 3.67 грн |
| 1000+ | 3.08 грн |
| BZX55C6V2 R0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 230 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 118+ | 3.89 грн |
| 163+ | 2.60 грн |
| BZX55C7V5 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 155 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.60 грн |
| 155+ | 2.75 грн |
| BZX55C9V1 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; tape; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 899 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.85 грн |
| 58+ | 7.36 грн |
| 100+ | 4.44 грн |
| 500+ | 3.12 грн |
| SMBJ26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| SMBJ26AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 14.9A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 14.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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| SMBJ58A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ58AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 64.4÷71.2V; 6.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 6.7A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| SMBJ15CA R5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 16.7V; 25.1A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 25.1A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Number of channels: 1
на замовлення 7650 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3400+ | 11.30 грн |
| GBU405 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 96 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.99 грн |
| 10+ | 55.28 грн |
| 20+ | 48.25 грн |
| GBU407 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 80A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 80A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 104 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.99 грн |
| 10+ | 55.02 грн |
| 20+ | 49.94 грн |
| 100+ | 46.56 грн |
| SMBJ33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 36.7V; 11.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 11.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Application: automotive industry
Kind of package: reel; tape
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| 1N4448 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: reel; tape
на замовлення 2318 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.59 грн |
| 35+ | 12.13 грн |
| 40+ | 10.84 грн |
| 59+ | 7.18 грн |
| 100+ | 6.45 грн |
| 250+ | 3.60 грн |
| 500+ | 3.24 грн |
| 1000+ | 2.69 грн |
| 1N4448 A0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.15A; Ammo Pack; Ifsm: 2A; DO35; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Capacitance: 4pF
Case: DO35
Max. forward voltage: 1V
Max. load current: 0.45A
Max. forward impulse current: 2A
Kind of package: Ammo Pack
на замовлення 125 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.59 грн |
| 35+ | 12.13 грн |
| 40+ | 10.84 грн |
| 59+ | 7.18 грн |
| 100+ | 6.45 грн |
| SMAJ58CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 64.4V; 4.3A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4V
Max. forward impulse current: 4.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| DBLS152G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 1.5A; Ifsm: 50A
Case: DBLS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.1V
Load current: 1.5A
Max. forward impulse current: 50A
Max. off-state voltage: 0.1kV
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| 1.5KE16A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 160V; 66.7A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 160V
Max. forward impulse current: 66.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5KE
Tolerance: ±5%
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 160V; 66.7A; unidirectional; ±5%; DO201; 1.5KE
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 16V
Breakdown voltage: 160V
Max. forward impulse current: 66.7A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: 1.5KE
Tolerance: ±5%
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| US1DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Capacitance: 10pF
Reverse recovery time: 75ns
Max. forward voltage: 1V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SMA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 75ns; SMA; Ufmax: 1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Capacitance: 10pF
Reverse recovery time: 75ns
Max. forward voltage: 1V
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 200V
Kind of package: reel; tape
Application: automotive industry
Case: SMA
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| SF1004GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 200V
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 200V
Application: automotive industry
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| SF1005GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 300V
Application: automotive industry
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| SF1006GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 35ns
Mounting: THT
Case: TO220AB
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.4kV
Application: automotive industry
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| SMBJ5.0CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 6.4÷7V; 68A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1.6mA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 353 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.35 грн |
| 20+ | 21.67 грн |
| 22+ | 19.47 грн |
| 100+ | 12.11 грн |
| BAT43W RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Capacitance: 10pF
Reverse recovery time: 5ns
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| SMBJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 26.7÷29.5V; 16A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| SMBJ20CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2524 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.17 грн |
| 18+ | 24.72 грн |
| 19+ | 23.28 грн |
| 50+ | 18.96 грн |
| 100+ | 17.01 грн |
| 500+ | 12.36 грн |
| 1000+ | 10.33 грн |
| SMBJ20A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 19.4A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 19.4A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| TSCDF06065G1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. off-state voltage: 650V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; ITO220AC; tube
Kind of package: tube
Case: ITO220AC
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Mounting: THT
Load current: 6A
Max. off-state voltage: 650V
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| ES2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES2GA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES2GAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES2GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES2GALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES2GFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES2GFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES2GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; 35ns; SMB; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ABS15J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Case: ABS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 40A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 0.6kV
Case: ABS
на замовлення 323 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.32 грн |
| 16+ | 27.17 грн |
| 100+ | 17.52 грн |
| 250+ | 14.64 грн |
| ABS15M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 40A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 1kV
Case: ABS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 40A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 1kV
Case: ABS
на замовлення 485 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 43.76 грн |
| 17+ | 25.48 грн |
| 100+ | 16.17 грн |
| BZX85C10 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 305 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 91+ | 5.01 грн |
| 102+ | 4.17 грн |
| BZX85C24 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 178 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.79 грн |
| 27+ | 16.08 грн |
| 100+ | 8.89 грн |
| HER1005GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 10A
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 5Ax2; TO220AB; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: TO220AB
Reverse recovery time: 50ns
Application: automotive industry
Max. load current: 10A
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| SMCJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 79A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 79A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 79A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 79A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SMBJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
на замовлення 2164 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.44 грн |
| 26+ | 16.42 грн |
| 50+ | 12.11 грн |
| 100+ | 10.58 грн |
| 250+ | 8.89 грн |
| 500+ | 7.87 грн |
| SMCJ28A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 34A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| SK26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 3799 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 26.44 грн |
| 26+ | 16.59 грн |
| 50+ | 11.33 грн |
| 100+ | 9.57 грн |
| 500+ | 6.51 грн |
| 1000+ | 5.55 грн |
| 2000+ | 4.77 грн |
| SK26AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Application: automotive industry
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| SK26AHR3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. forward voltage: 0.7V
Leakage current: 0.5mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD
Type of diode: Schottky rectifying
Case: DO214AC; SMA
Mounting: SMD
Max. forward voltage: 0.7V
Leakage current: 0.5mA
на замовлення 244800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27000+ | 1.37 грн |
| BZT52C5V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 920 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 9.12 грн |
| 81+ | 5.25 грн |
| 142+ | 2.99 грн |
| BZT52C5V6 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
на замовлення 690 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.76 грн |
| 55+ | 7.79 грн |
| 100+ | 4.72 грн |
| 500+ | 3.31 грн |
| GBPC5008 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 50A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 50A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 50A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: in-tray
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 375.59 грн |
| MBRAD8100H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Application: automotive industry
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| SMA6J26A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9V; 14.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: SMA6J
Max. forward impulse current: 14.7A
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Peak pulse power dissipation: 0.6kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 28.9V; 14.7A; unidirectional; SMA; reel,tape
Type of diode: TVS
Mounting: SMD
Kind of package: reel; tape
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: SMA6J
Max. forward impulse current: 14.7A
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Peak pulse power dissipation: 0.6kW
на замовлення 20 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.11 грн |
| 20+ | 21.16 грн |
| HER1604GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO220AB; 50ns
Case: TO220AB
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
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| HER1604PTH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8Ax2; TO3P; 50ns; automotive industry
Case: TO3P
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Reverse recovery time: 50ns
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 300V
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
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