Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (35966) > Сторінка 231 з 600
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LL103C-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 20V 200MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 10 ns Technology: Schottky Capacitance @ Vr, F: 50pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 10 V |
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LL4148-M-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 300MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LL4150-M-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 600MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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LL4151-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 300MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LL4151-M-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 300MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 50 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
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LL42-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 30V 200MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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LL43-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 30V 200MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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LL4448-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 300MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 300mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Current - Reverse Leakage @ Vr: 25 nA @ 20 V Grade: Automotive Qualification: AEC-Q101 |
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LL46-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 100V 150MA SOD80 Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 10pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
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LS101A-GS18 | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 60V 30MA SOD80 |
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LS101B-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOT 50V 30MA SOD80 Packaging: Tape & Reel (TR) Package / Case: SOD-80 Variant Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Current - Average Rectified (Io): 30mA Supplier Device Package: SOD-80 QuadroMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 40 V |
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MBL106S-M3/I | Vishay General Semiconductor - Diodes Division | Description: BRIDGE RECT 1PHASE 600V 1A 4SMD |
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MBRB10100CT-M3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 90V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
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MBRB10100-M3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
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MBRB10H35-E3/81 | Vishay General Semiconductor - Diodes Division | Description: DIODE SCHOTTKY 35V 10A TO263AB |
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MBRB20100CT-M3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 10A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 100 V |
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MBRB25H50CTHE3/81 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 50V TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A Current - Reverse Leakage @ Vr: 100 µA @ 50 V |
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MCL103A-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTT 40V 200MA MICROMELF Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 200mA Supplier Device Package: MicroMELF Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 30 V Grade: Automotive Qualification: AEC-Q101 |
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MCL4151-TR3 | Vishay General Semiconductor - Diodes Division | Description: DIODE GEN PURP 75V 200MA MICMELF |
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MCL4448-TR3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 75V 150MA MICROMELF Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 8 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: MicroMELF Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 19932 шт: термін постачання 21-31 дні (днів) |
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MMBD6050-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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MMBD6050-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
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MMBD6050-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 70V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Grade: Automotive Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
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MMBD914-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MMBD914-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 100V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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MMBZ27VDA-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 27V 225MW SOT23 |
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MMBZ27VDA-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 27V 225MW SOT23 |
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MMBZ4624-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 350MW SOT23-3 |
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MMBZ4624-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 350MW SOT23-3 |
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MMBZ4701-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 14V 350MW SOT23-3 |
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MMBZ5225B-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 3V 225MW SOT23-3 |
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MMBZ5225B-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 3V 225MW SOT23-3 |
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MMBZ5225B-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 3V 225MW SOT23-3 |
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MMBZ5225C-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 3V 225MW SOT23-3 |
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MMBZ5225C-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 3V 225MW SOT23-3 |
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MMBZ5225C-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 3V 225MW SOT23-3 |
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MMBZ5226B-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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MMBZ5226B-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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MMBZ5226B-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 225 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V Qualification: AEC-Q101 |
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MMBZ5226C-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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MMBZ5226C-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V |
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MMBZ5226C-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 28 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 225 mW Current - Reverse Leakage @ Vr: 25 µA @ 1 V Qualification: AEC-Q101 |
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MMBZ5227B-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
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MMBZ5227B-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 225MW SOT23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
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MMBZ5227B-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 225MW SOT23-3 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 225 mW Current - Reverse Leakage @ Vr: 15 µA @ 1 V Qualification: AEC-Q101 |
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MMBZ5227C-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
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MMBZ5227C-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
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MMBZ5227C-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 3.6V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 225 mW Current - Reverse Leakage @ Vr: 15 µA @ 1 V Qualification: AEC-Q101 |
товар відсутній |
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MMBZ5229B-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
товар відсутній |
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MMBZ5229B-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
товар відсутній |
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MMBZ5229B-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
товар відсутній |
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MMBZ5229C-E3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
товар відсутній |
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MMBZ5229C-G3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOT-23-3 Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
товар відсутній |
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MMBZ5229C-HE3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 4.3V 225MW SOT23-3 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: SOT-23-3 Grade: Automotive Power - Max: 225 mW Current - Reverse Leakage @ Vr: 5 µA @ 1 V Qualification: AEC-Q101 |
товар відсутній |
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MMBZ5230B-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 225MW SOT23-3 |
товар відсутній |
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MMBZ5230B-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 225MW SOT23-3 |
товар відсутній |
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MMBZ5230B-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 225MW SOT23-3 |
товар відсутній |
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MMBZ5230C-E3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 225MW SOT23-3 |
товар відсутній |
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MMBZ5230C-G3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 225MW SOT23-3 |
товар відсутній |
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MMBZ5230C-HE3-18 | Vishay General Semiconductor - Diodes Division | Description: DIODE ZENER 4.7V 225MW SOT23-3 |
товар відсутній |
LL103C-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 20V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
Description: DIODE SCHOT 20V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10 V
товар відсутній
LL4148-M-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 100V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.76 грн |
LL4150-M-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 600MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 600MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
LL4151-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.66 грн |
LL4151-M-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
LL42-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
LL43-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 5.37 грн |
LL4448-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
LL46-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 100V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOT 100V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
LS101A-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD80
Description: DIODE SCHOTTKY 60V 30MA SOD80
товар відсутній
LS101B-GS18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 50V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Description: DIODE SCHOT 50V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
товар відсутній
MBL106S-M3/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1A 4SMD
Description: BRIDGE RECT 1PHASE 600V 1A 4SMD
товар відсутній
MBRB10100CT-M3/8W |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
MBRB10100-M3/8W |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
MBRB10H35-E3/81 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Description: DIODE SCHOTTKY 35V 10A TO263AB
товар відсутній
MBRB20100CT-M3/8W |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товар відсутній
MBRB25H50CTHE3/81 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Description: DIODE ARRAY SCHOTTKY 50V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
товар відсутній
MCL103A-TR3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTT 40V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
MCL4151-TR3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 75V 200MA MICMELF
Description: DIODE GEN PURP 75V 200MA MICMELF
товар відсутній
MCL4448-TR3 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 19932 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.83 грн |
MMBD6050-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
MMBD6050-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
товар відсутній
MMBD6050-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
товар відсутній
MMBD914-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.68 грн |
MMBD914-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10000+ | 1.76 грн |
MMBZ27VDA-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 225MW SOT23
Description: DIODE ZENER 27V 225MW SOT23
товар відсутній
MMBZ27VDA-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 225MW SOT23
Description: DIODE ZENER 27V 225MW SOT23
товар відсутній
MMBZ4624-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
Description: DIODE ZENER 4.7V 350MW SOT23-3
товар відсутній
MMBZ4624-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
Description: DIODE ZENER 4.7V 350MW SOT23-3
товар відсутній
MMBZ4701-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 350MW SOT23-3
Description: DIODE ZENER 14V 350MW SOT23-3
товар відсутній
MMBZ5225B-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Description: DIODE ZENER 3V 225MW SOT23-3
товар відсутній
MMBZ5225B-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Description: DIODE ZENER 3V 225MW SOT23-3
товар відсутній
MMBZ5225B-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Description: DIODE ZENER 3V 225MW SOT23-3
товар відсутній
MMBZ5225C-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Description: DIODE ZENER 3V 225MW SOT23-3
товар відсутній
MMBZ5225C-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Description: DIODE ZENER 3V 225MW SOT23-3
товар відсутній
MMBZ5225C-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
Description: DIODE ZENER 3V 225MW SOT23-3
товар відсутній
MMBZ5226B-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
MMBZ5226B-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
MMBZ5226B-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
MMBZ5226C-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
MMBZ5226C-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
товар відсутній
MMBZ5226C-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
MMBZ5227B-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
товар відсутній
MMBZ5227B-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: DIODE ZENER 3.6V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
товар відсутній
MMBZ5227B-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
MMBZ5227C-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
товар відсутній
MMBZ5227C-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
товар відсутній
MMBZ5227C-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
MMBZ5229B-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
MMBZ5229B-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
MMBZ5229B-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
MMBZ5229C-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
MMBZ5229C-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
товар відсутній
MMBZ5229C-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
MMBZ5230B-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Description: DIODE ZENER 4.7V 225MW SOT23-3
товар відсутній
MMBZ5230B-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Description: DIODE ZENER 4.7V 225MW SOT23-3
товар відсутній
MMBZ5230B-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Description: DIODE ZENER 4.7V 225MW SOT23-3
товар відсутній
MMBZ5230C-E3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Description: DIODE ZENER 4.7V 225MW SOT23-3
товар відсутній
MMBZ5230C-G3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Description: DIODE ZENER 4.7V 225MW SOT23-3
товар відсутній
MMBZ5230C-HE3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
Description: DIODE ZENER 4.7V 225MW SOT23-3
товар відсутній