Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (42065) > Сторінка 204 з 702
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MPG06M-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A MPG06Packaging: Cut Tape (CT) Package / Case: MPG06, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 600 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MUR420-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 4A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4 Voltage Coupled to Current - Reverse Leakage @ Vr: 200 Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 1634 шт: термін постачання 21-31 дні (днів) |
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RS1A-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
на замовлення 11691 шт: термін постачання 21-31 дні (днів) |
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RS1G-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 14980 шт: термін постачання 21-31 дні (днів) |
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RS3J-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 34pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
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S5M-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 5A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SB130-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 7192 шт: термін постачання 21-31 дні (днів) |
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SB240S-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 2A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 83108 шт: термін постачання 21-31 дні (днів) |
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SRP100K-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SRP600A-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 6A P600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SS1H10-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
на замовлення 9999 шт: термін постачання 21-31 дні (днів) |
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SS25S-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 50V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 50 V |
на замовлення 16719 шт: термін постачання 21-31 дні (днів) |
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SS8PH9-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 140pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Current - Reverse Leakage @ Vr: 2 µA @ 90 V |
на замовлення 10708 шт: термін постачання 21-31 дні (днів) |
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SSA23L-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 17322 шт: термін постачання 21-31 дні (днів) |
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SSB44-E3/5BT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 4A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
на замовлення 14883 шт: термін постачання 21-31 дні (днів) |
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UG1D-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 6304 шт: термін постачання 21-31 дні (днів) |
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V12P10-M3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
на замовлення 2646 шт: термін постачання 21-31 дні (днів) |
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VB20150S-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 20A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VB20200G-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 200V 10A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 200 V |
на замовлення 8579 шт: термін постачання 21-31 дні (днів) |
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VS-12CWQ04FNTRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 6A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 6 A Current - Reverse Leakage @ Vr: 3 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-30WQ04FNTRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 3.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 189pF @ 5V, 1MHz Current - Average Rectified (Io): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-32CTQ030STRLPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 30V 15A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-HFA04SD60STRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 4A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VS-MBRS190TRPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 42pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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B360B-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 3A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3 Voltage Coupled to Current - Reverse Leakage @ Vr: 60 Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
на замовлення 5004 шт: термін постачання 21-31 дні (днів) |
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BYM07-300-E3/98 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STD 300V 500MA DO213AAPackaging: Cut Tape (CT) Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
на замовлення 7227 шт: термін постачання 21-31 дні (днів) |
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ES1DHE3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ES1D-M3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 16033 шт: термін постачання 21-31 дні (днів) |
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ES1PB-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO220AA |
на замовлення 5411 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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ES2C-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 2A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 18pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
на замовлення 3467 шт: термін постачання 21-31 дні (днів) |
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ES3A-E3/57T | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
на замовлення 3618 шт: термін постачання 21-31 дні (днів) |
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MSE1PD-M3/89A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219ADPackaging: Cut Tape (CT) Package / Case: DO-219AD Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AD (MicroSMP) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 8711 шт: термін постачання 21-31 дні (днів) |
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S1JHE3/61T | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SE15PJ-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1.5A DO220AA |
на замовлення 6003 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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SS12P3L-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 930pF @ 4V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 12 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
на замовлення 1359 шт: термін постачання 21-31 дні (днів) |
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SS29-E3/52T | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1.5A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A Current - Reverse Leakage @ Vr: 30 µA @ 90 V |
на замовлення 2700 шт: термін постачання 21-31 дні (днів) |
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SS8P4C-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTT 40V 4A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V |
на замовлення 3278 шт: термін постачання 21-31 дні (днів) |
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SS8PH9-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 8A TO277A |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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V8P10HM3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BA159-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 237 шт: термін постачання 21-31 дні (днів) |
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BA159GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 733 шт: термін постачання 21-31 дні (днів) |
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BY251GP-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 3A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 40pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 251 шт: термін постачання 21-31 дні (днів) |
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SB130-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
на замовлення 4133 шт: термін постачання 21-31 дні (днів) |
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SB140-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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SRP100B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UF4003-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
на замовлення 2689 шт: термін постачання 21-31 дні (днів) |
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UF4004-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
на замовлення 2284 шт: термін постачання 21-31 дні (днів) |
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UF4005-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
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UF4006-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
на замовлення 3194 шт: термін постачання 21-31 дні (днів) |
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SMF10A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 10VWM 17VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 562pF @ 1MHz Current - Peak Pulse (10/1000µs): 11.8A Voltage - Reverse Standoff (Typ): 10V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.1V Voltage - Clamping (Max) @ Ipp: 17V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMF11A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 11VWM 18.2VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 509pF @ 1MHz Current - Peak Pulse (10/1000µs): 11A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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SMF13A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13V 21.5V DO219AB |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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SMF16A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 16VWM 26VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 343pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.7A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMF17A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 17VWM 27.6VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 324pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 17V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.9V Voltage - Clamping (Max) @ Ipp: 27.6V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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SMF18A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 18VWM 29.2VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 320pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.8A Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 20V Voltage - Clamping (Max) @ Ipp: 29.2V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMF20A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 20VWM 32.4VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 283pF @ 1MHz Current - Peak Pulse (10/1000µs): 6.2A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMF22A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 22VWM 35.5VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 271pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.6A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SMF24A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 38.9VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 244pF @ 1MHz Current - Peak Pulse (10/1000µs): 5.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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SMF26A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 26VWM 42.1VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 230pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.8A Voltage - Reverse Standoff (Typ): 26V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 28.9V Voltage - Clamping (Max) @ Ipp: 42.1V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||||
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SMF28A-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 28VWM 45.4VC DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Capacitance @ Frequency: 227pF @ 1MHz Current - Peak Pulse (10/1000µs): 4.4A Voltage - Reverse Standoff (Typ): 28V Supplier Device Package: DO-219AB (SMF) Unidirectional Channels: 1 Voltage - Breakdown (Min): 31.1V Voltage - Clamping (Max) @ Ipp: 45.4V Power - Peak Pulse: 200W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| MPG06M-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A MPG06
Packaging: Cut Tape (CT)
Package / Case: MPG06, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 600 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| MUR420-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 4
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1634 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.92 грн |
| 10+ | 65.33 грн |
| 50+ | 48.72 грн |
| 100+ | 40.67 грн |
| 500+ | 31.81 грн |
| RS1A-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 11691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.74 грн |
| 17+ | 18.95 грн |
| 50+ | 13.66 грн |
| 100+ | 11.20 грн |
| 500+ | 8.36 грн |
| RS1G-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 14980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 31.74 грн |
| 17+ | 18.72 грн |
| 50+ | 13.51 грн |
| 100+ | 11.08 грн |
| 500+ | 8.26 грн |
| RS3J-E3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 34pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.75 грн |
| 10+ | 34.69 грн |
| 100+ | 27.48 грн |
| 500+ | 19.82 грн |
| 1000+ | 17.89 грн |
| S5M-E3/9AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: DIODE STANDARD 1000V 5A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| SB130-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 7192 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.53 грн |
| 16+ | 19.33 грн |
| 100+ | 12.25 грн |
| 500+ | 8.58 грн |
| 1000+ | 7.64 грн |
| 2000+ | 6.84 грн |
| SB240S-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 83108 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.82 грн |
| 12+ | 27.74 грн |
| 50+ | 20.19 грн |
| 100+ | 16.64 грн |
| 500+ | 12.59 грн |
| SRP100K-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| SRP600A-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 6A P600
Description: DIODE GEN PURP 50V 6A P600
товару немає в наявності
В кошику
од. на суму грн.
| SS1H10-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
на замовлення 9999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 40.47 грн |
| 13+ | 24.30 грн |
| 50+ | 17.67 грн |
| 100+ | 14.54 грн |
| 500+ | 10.95 грн |
| SS25S-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Description: DIODE SCHOTTKY 50V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 16719 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 37.29 грн |
| 14+ | 22.24 грн |
| 50+ | 16.12 грн |
| 100+ | 13.26 грн |
| 500+ | 9.94 грн |
| SS8PH9-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 90 V
Description: DIODE SCHOTTKY 90V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 2 µA @ 90 V
на замовлення 10708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.37 грн |
| 10+ | 33.85 грн |
| 100+ | 23.18 грн |
| 500+ | 17.19 грн |
| 1000+ | 15.68 грн |
| 2000+ | 14.40 грн |
| SSA23L-E3/5AT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 17322 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.15 грн |
| 14+ | 22.46 грн |
| 100+ | 13.46 грн |
| 500+ | 11.69 грн |
| 1000+ | 7.95 грн |
| 2000+ | 7.32 грн |
| SSB44-E3/5BT |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 4A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 4 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 14883 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.96 грн |
| 10+ | 32.47 грн |
| 50+ | 23.76 грн |
| 100+ | 19.63 грн |
| 500+ | 14.95 грн |
| UG1D-E3/54 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 6304 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 26.19 грн |
| 19+ | 16.89 грн |
| 100+ | 13.40 грн |
| 500+ | 9.45 грн |
| 1000+ | 8.19 грн |
| 2000+ | 7.59 грн |
| V12P10-M3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Description: DIODE SCHOTTKY 100V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 12 A
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
на замовлення 2646 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 105.54 грн |
| 10+ | 63.96 грн |
| 50+ | 47.65 грн |
| 100+ | 39.77 грн |
| 500+ | 31.09 грн |
| VB20150S-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A TO263AB
Description: DIODE SCHOTTKY 150V 20A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| VB20200G-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Description: DIODE ARR SCHOT 200V 10A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
на замовлення 8579 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 178.54 грн |
| 10+ | 110.41 грн |
| 50+ | 83.82 грн |
| 100+ | 70.63 грн |
| VS-12CWQ04FNTRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Description: DIODE ARRAY SCHOTTKY 40V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 6 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| VS-30WQ04FNTRPBF |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
Description: DIODE SCHOTTKY 40V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 189pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 40 V
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| VS-32CTQ030STRLPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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| VS-HFA04SD60STRPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
Description: DIODE STANDARD 600V 4A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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| VS-MBRS190TRPBF |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 42pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 90 V
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В кошику
од. на суму грн.
| B360B-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 3 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 3
Voltage Coupled to Current - Reverse Leakage @ Vr: 60
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
на замовлення 5004 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 49.20 грн |
| 11+ | 29.19 грн |
| 50+ | 21.26 грн |
| 100+ | 17.54 грн |
| BYM07-300-E3/98 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 300V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE STD 300V 500MA DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
на замовлення 7227 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.88 грн |
| 13+ | 24.45 грн |
| 100+ | 18.23 грн |
| 500+ | 13.20 грн |
| 1000+ | 11.83 грн |
| ES1DHE3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Description: DIODE GEN PURP 200V 1A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| ES1D-M3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 16033 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 46.82 грн |
| 11+ | 27.81 грн |
| 50+ | 20.22 грн |
| 100+ | 16.67 грн |
| 500+ | 12.60 грн |
| ES1PB-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO220AA
Description: DIODE GEN PURP 100V 1A DO220AA
на замовлення 5411 шт:
термін постачання 21-31 дні (днів)
| ES2C-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE STANDARD 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
на замовлення 3467 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.75 грн |
| 10+ | 32.70 грн |
| 50+ | 23.95 грн |
| 100+ | 19.78 грн |
| ES3A-E3/57T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 3618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 48.40 грн |
| 12+ | 27.43 грн |
| 100+ | 24.10 грн |
| MSE1PD-M3/89A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO219AD
Packaging: Cut Tape (CT)
Package / Case: DO-219AD
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AD (MicroSMP)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 8711 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.98 грн |
| 19+ | 16.20 грн |
| 50+ | 11.66 грн |
| 100+ | 9.54 грн |
| 500+ | 7.08 грн |
| S1JHE3/61T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| SE15PJ-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO220AA
Description: DIODE GEN PURP 600V 1.5A DO220AA
на замовлення 6003 шт:
термін постачання 21-31 дні (днів)
| SS12P3L-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 930pF @ 4V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 12 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 1359 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.45 грн |
| 10+ | 52.88 грн |
| 100+ | 41.12 грн |
| 500+ | 32.71 грн |
| SS29-E3/52T |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 90 V
Description: DIODE SCHOTTKY 90V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 µA @ 90 V
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 58.72 грн |
| 10+ | 34.92 грн |
| 100+ | 22.50 грн |
| SS8P4C-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 40V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A
Current - Reverse Leakage @ Vr: 300 µA @ 40 V
на замовлення 3278 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 52.37 грн |
| 10+ | 33.24 грн |
| 100+ | 25.43 грн |
| 500+ | 18.35 грн |
| SS8PH9-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 8A TO277A
Description: DIODE SCHOTTKY 90V 8A TO277A
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| V8P10HM3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BA159-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.85 грн |
| 12+ | 25.83 грн |
| 50+ | 18.78 грн |
| 100+ | 15.47 грн |
| BA159GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 733 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.57 грн |
| 10+ | 61.51 грн |
| 50+ | 45.80 грн |
| 100+ | 38.21 грн |
| 500+ | 29.83 грн |
| BY251GP-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.15 грн |
| 14+ | 22.31 грн |
| 100+ | 18.48 грн |
| SB130-E3/73 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
на замовлення 4133 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 20.63 грн |
| 23+ | 13.30 грн |
| 100+ | 8.09 грн |
| 500+ | 6.76 грн |
| 1000+ | 6.35 грн |
| SB140-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.96 грн |
| 10+ | 32.55 грн |
| 50+ | 23.78 грн |
| 100+ | 19.64 грн |
| SRP100B-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| UF4003-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2689 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.03 грн |
| 10+ | 41.80 грн |
| 50+ | 30.73 грн |
| 100+ | 25.49 грн |
| 500+ | 19.59 грн |
| UF4004-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
на замовлення 2284 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 69.83 грн |
| 10+ | 41.95 грн |
| 50+ | 30.85 грн |
| 100+ | 25.59 грн |
| 500+ | 19.67 грн |
| UF4005-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 65.86 грн |
| 10+ | 39.81 грн |
| 50+ | 29.22 грн |
| 100+ | 24.22 грн |
| 500+ | 18.57 грн |
| UF4006-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
на замовлення 3194 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.27 грн |
| 10+ | 38.82 грн |
| 50+ | 28.50 грн |
| 100+ | 23.61 грн |
| 500+ | 18.11 грн |
| SMF10A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 562pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 10VWM 17VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 562pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11.8A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMF11A-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 11VWM 18.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 509pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 11VWM 18.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 509pF @ 1MHz
Current - Peak Pulse (10/1000µs): 11A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SMF13A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13V 21.5V DO219AB
Description: TVS DIODE 13V 21.5V DO219AB
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SMF16A-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 343pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 16VWM 26VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 343pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMF17A-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 27.6VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 324pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 17VWM 27.6VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 324pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SMF18A-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 320pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 18VWM 29.2VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 320pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.8A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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| SMF20A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 32.4VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 283pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 283pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMF22A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 271pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 35.5VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 271pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.6A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| SMF24A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 244pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 38.9VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 244pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.07 грн |
| SMF26A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 26VWM 42.1VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 230pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26VWM 42.1VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 230pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| SMF28A-HE3-08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28VWM 45.4VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 227pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 28VWM 45.4VC DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Capacitance @ Frequency: 227pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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