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V15P45-M3/86A V15P45-M3/86A Vishay General Semiconductor - Diodes Division v15p45.pdf Description: DIODE SCHOTTKY 15A 45V TO-277A
товару немає в наявності
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VBUS051CD-HD1-G-08 VBUS051CD-HD1-G-08 Vishay General Semiconductor - Diodes Division vbus051cd.pdf Description: TVS DIODE 5.5VWM 14VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 28W
Power Line Protection: No
Part Status: Active
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VBUS053BZ-HNH-G-08 VBUS053BZ-HNH-G-08 Vishay General Semiconductor - Diodes Division VBUS053BZ-HNH.pdf Description: TVS DIODE 5.5VWM 18VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 36W
Power Line Protection: Yes
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VBUS053CZ-HAF-G-08 VBUS053CZ-HAF-G-08 Vishay General Semiconductor - Diodes Division vbus053c.pdf Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 54W
Power Line Protection: Yes
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+17.57 грн
6000+15.61 грн
Мінімальне замовлення: 3000
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VBUS54DD-HS4-G4-08 VBUS54DD-HS4-G4-08 Vishay General Semiconductor - Diodes Division vbus54dd.pdf Description: TVS DIODE 5.5VWM 19VC LLP1010-5L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
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VBUS54ED-FBL-G4-08 Vishay General Semiconductor - Diodes Division VBUS54ED-FBL.pdf Description: TVS DIODE 5.5VWM 12V LLP2510-10L
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP2510-10L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: Yes
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VCUT05B1-DD1-G-08 VCUT05B1-DD1-G-08 Vishay General Semiconductor - Diodes Division vcut05b1dd1.pdf Description: TVS DIODE 5.5VWM 12.5V LLP10062M
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2M
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 38W
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+3.81 грн
Мінімальне замовлення: 8000
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VCUT07B1-HD1-G4-08 VCUT07B1-HD1-G4-08 Vishay General Semiconductor - Diodes Division vcut07b1hd1.pdf Description: TVS DIODE 7VWM 15VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
8000+2.87 грн
Мінімальне замовлення: 8000
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VEMI353A-HAF-G-08 Vishay General Semiconductor - Diodes Division vemi353a.pdf Description: FILTER RC(PI) 30 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 30Ohms, C = 37pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 30
ESD Protection: Yes
Number of Channels: 3
Current: 4 A
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VEMI35AA-HAF-G-08 Vishay General Semiconductor - Diodes Division vemi35aa.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 37pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 3
Current: 4 A
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VEMI45AB-HNH-GS08 Vishay General Semiconductor - Diodes Division vemi45ab.pdf Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Current: 4 A
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VEMI85AC-HGK-GS08 Vishay General Semiconductor - Diodes Division vemi85ac.pdf Description: FILTER RC(PI) 100 OHM/13PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 13pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 240MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
Current: 4 A
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VESD03A1C-HD1-GS08 VESD03A1C-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd03a1.pdf Description: TVS DIODE 3.3VWM 10VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
8000+4.72 грн
16000+4.45 грн
24000+4.36 грн
40000+3.24 грн
56000+3.12 грн
80000+3.01 грн
Мінімальне замовлення: 8000
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VESD05A1C-HD1-GS08 VESD05A1C-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd05a1.pdf Description: TVS DIODE 5VWM 10VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 63pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
8000+3.99 грн
16000+3.75 грн
24000+3.65 грн
Мінімальне замовлення: 8000
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VLZ18C-GS08 VLZ18C-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 17.88V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17.88 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 16.5 V
Qualification: AEC-Q101
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VLZ24A-GS08 VLZ24A-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 22.62V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22.62 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 20.9 V
Qualification: AEC-Q101
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VLZ24C-GS08 VLZ24C-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 23.72V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 23.72 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 22 V
Qualification: AEC-Q101
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VLZ30A-GS08 VLZ30A-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 27.69V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27.69 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 25.6 V
Qualification: AEC-Q101
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VLZ33A-GS08 VLZ33A-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 30.45V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30.45 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 28.2 V
Qualification: AEC-Q101
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VLZ33B-GS08 VLZ33B-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 31.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 31.1 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 28.8 V
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VLZ33C-GS08 VLZ33C-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 31.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 31.7 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 29.4 V
Qualification: AEC-Q101
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VLZ36B-GS08 VLZ36B-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 33.64V 500MW SOD80
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VLZ39E-GS08 VLZ39E-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 38.33V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 38.33 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 35.5 V
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VLZ47-GS08 VLZ47-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 46.5V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 46.5 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 41.8 V
Qualification: AEC-Q101
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VLZ4V7B-GS08 VLZ4V7B-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 4.68V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.68 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 2 V
Qualification: AEC-Q101
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VLZ4V7-GS08 VLZ4V7-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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VLZ9V1A-GS08 VLZ9V1A-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 8.51V 500MW SOD80
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VLZ9V1C-GS08 VLZ9V1C-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 9.07V 500MW SOD80
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PB3006-E3/45 PB3006-E3/45 Vishay General Semiconductor - Diodes Division pb3006.pdf Description: BRIDGE RECT 1PHASE 600V 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 404 шт:
термін постачання 21-31 дні (днів)
1+313.38 грн
20+134.28 грн
100+129.09 грн
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PB3010-E3/45 PB3010-E3/45 Vishay General Semiconductor - Diodes Division pb3006.pdf Description: BRIDGE RECT 1PHASE 1KV 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
1+313.38 грн
20+169.42 грн
100+141.81 грн
500+107.70 грн
В кошику  од. на суму  грн.
PB4010-E3/45 PB4010-E3/45 Vishay General Semiconductor - Diodes Division pb4006.pdf Description: BRIDGE RECT 1PHASE 1KV 40A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 3908 шт:
термін постачання 21-31 дні (днів)
1+321.85 грн
20+183.73 грн
100+146.03 грн
500+113.33 грн
1000+105.72 грн
2000+105.46 грн
В кошику  од. на суму  грн.
V10150SHM3/4W V10150SHM3/4W Vishay General Semiconductor - Diodes Division v10150s.pdf Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V10150S-M3/4W V10150S-M3/4W Vishay General Semiconductor - Diodes Division v10150s.pdf Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V20100SG-M3/4W V20100SG-M3/4W Vishay General Semiconductor - Diodes Division v20100sg.pdf Description: DIODE SCHOTTKY 100V 20A TO220-3
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V20120CHM3/4W V20120CHM3/4W Vishay General Semiconductor - Diodes Division v20120c.pdf Description: DIODE ARR SCHOT 120V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 8 µA @ 90 V
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V20120C-M3/4W V20120C-M3/4W Vishay General Semiconductor - Diodes Division v20120c.pdf Description: DIODE ARR SCHOT 120V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 120 V
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V20120SGHM3/4W V20120SGHM3/4W Vishay General Semiconductor - Diodes Division v20120sg.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Qualification: AEC-Q101
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V20120SG-M3/4W V20120SG-M3/4W Vishay General Semiconductor - Diodes Division v20120sg.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20120SHM3/4W V20120SHM3/4W Vishay General Semiconductor - Diodes Division v20120s.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
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V20120S-M3/4W V20120S-M3/4W Vishay General Semiconductor - Diodes Division v20120s.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20150CHM3/4W V20150CHM3/4W Vishay General Semiconductor - Diodes Division v20150c.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150C-M3/4W V20150C-M3/4W Vishay General Semiconductor - Diodes Division v20150c.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150SGHM3/4W V20150SGHM3/4W Vishay General Semiconductor - Diodes Division v20150sg.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150SG-M3/4W V20150SG-M3/4W Vishay General Semiconductor - Diodes Division v20150sg.pdf Description: DIODE SCHOTTKY 150V 20A TO220-3
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V20150SHM3/4W V20150SHM3/4W Vishay General Semiconductor - Diodes Division v20150s.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150S-M3/4W V20150S-M3/4W Vishay General Semiconductor - Diodes Division v20150s.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20M100M-E3/4W V20M100M-E3/4W Vishay General Semiconductor - Diodes Division v20m100m.pdf Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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V30100CHM3/4W V30100CHM3/4W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V30100C-M3/4W V30100C-M3/4W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
2+174.78 грн
50+82.26 грн
100+73.90 грн
500+55.60 грн
Мінімальне замовлення: 2
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V30100SGHM3/4W V30100SGHM3/4W Vishay General Semiconductor - Diodes Division v30100sg.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
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V30100SG-M3/4W V30100SG-M3/4W Vishay General Semiconductor - Diodes Division v30100sg.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
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V30100SHM3/4W V30100SHM3/4W Vishay General Semiconductor - Diodes Division v30100s.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
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V30100S-M3/4W V30100S-M3/4W Vishay General Semiconductor - Diodes Division v30100s.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
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V30120CHM3/4W V30120CHM3/4W Vishay General Semiconductor - Diodes Division v30120c.pdf Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
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V30120C-M3/4W V30120C-M3/4W Vishay General Semiconductor - Diodes Division v30120c.pdf Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V30120SG-M3/4W V30120SG-M3/4W Vishay General Semiconductor - Diodes Division v30120sg.pdf Description: DIODE SCHOTTKY 120V 30A TO220-3
товару немає в наявності
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V30150CHM3/4W V30150CHM3/4W Vishay General Semiconductor - Diodes Division v30150c.pdf Description: DIODE ARR SCHOT 150V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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V40100CHM3/4W V40100CHM3/4W Vishay General Semiconductor - Diodes Division v40100c.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V40100GHM3/4W V40100GHM3/4W Vishay General Semiconductor - Diodes Division v40100g.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V40100G-M3/4W V40100G-M3/4W Vishay General Semiconductor - Diodes Division v40100g.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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V15P45-M3/86A v15p45.pdf
V15P45-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15A 45V TO-277A
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VBUS051CD-HD1-G-08 vbus051cd.pdf
VBUS051CD-HD1-G-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 14VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 14V
Power - Peak Pulse: 28W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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VBUS053BZ-HNH-G-08 VBUS053BZ-HNH.pdf
VBUS053BZ-HNH-G-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 18VC LLP1713-9L
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Min)
Supplier Device Package: LLP1713-9L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 36W
Power Line Protection: Yes
товару немає в наявності
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VBUS053CZ-HAF-G-08 vbus053c.pdf
VBUS053CZ-HAF-G-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 54W
Power Line Protection: Yes
Part Status: Active
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+17.57 грн
6000+15.61 грн
Мінімальне замовлення: 3000
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VBUS54DD-HS4-G4-08 vbus54dd.pdf
VBUS54DD-HS4-G4-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 19VC LLP1010-5L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1010-5L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 57W
Power Line Protection: No
товару немає в наявності
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VBUS54ED-FBL-G4-08 VBUS54ED-FBL.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 12V LLP2510-10L
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP2510-10L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: Yes
товару немає в наявності
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VCUT05B1-DD1-G-08 vcut05b1dd1.pdf
VCUT05B1-DD1-G-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 12.5V LLP10062M
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2M
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 38W
Power Line Protection: No
Part Status: Active
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+3.81 грн
Мінімальне замовлення: 8000
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VCUT07B1-HD1-G4-08 vcut07b1hd1.pdf
VCUT07B1-HD1-G4-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 15VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 60W
Power Line Protection: No
на замовлення 32000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+2.87 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
VEMI353A-HAF-G-08 vemi353a.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 30 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 30Ohms, C = 37pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 30
ESD Protection: Yes
Number of Channels: 3
Current: 4 A
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VEMI35AA-HAF-G-08 vemi35aa.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 37pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 100MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 3
Current: 4 A
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VEMI45AB-HNH-GS08 vemi45ab.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.067" L x 0.053" W (1.70mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Current: 4 A
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VEMI85AC-HGK-GS08 vemi85ac.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHM/13PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.130" L x 0.053" W (3.30mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 13pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 240MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
Current: 4 A
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VESD03A1C-HD1-GS08 vesd03a1.pdf
VESD03A1C-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 10VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+4.72 грн
16000+4.45 грн
24000+4.36 грн
40000+3.24 грн
56000+3.12 грн
80000+3.01 грн
Мінімальне замовлення: 8000
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VESD05A1C-HD1-GS08 vesd05a1.pdf
VESD05A1C-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 10VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 63pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 80W
Power Line Protection: No
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+3.99 грн
16000+3.75 грн
24000+3.65 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
VLZ18C-GS08 VLZ_Series.pdf
VLZ18C-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 17.88V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17.88 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 16.5 V
Qualification: AEC-Q101
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VLZ24A-GS08 VLZ_Series.pdf
VLZ24A-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 22.62V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 22.62 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 20.9 V
Qualification: AEC-Q101
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VLZ24C-GS08 VLZ_Series.pdf
VLZ24C-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 23.72V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 23.72 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 22 V
Qualification: AEC-Q101
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VLZ30A-GS08 VLZ_Series.pdf
VLZ30A-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27.69V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 27.69 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 25.6 V
Qualification: AEC-Q101
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VLZ33A-GS08 VLZ_Series.pdf
VLZ33A-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30.45V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30.45 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 28.2 V
Qualification: AEC-Q101
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VLZ33B-GS08 VLZ_Series.pdf
VLZ33B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 31.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 31.1 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 28.8 V
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VLZ33C-GS08 VLZ_Series.pdf
VLZ33C-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 31.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 31.7 V
Impedance (Max) (Zzt): 65 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 29.4 V
Qualification: AEC-Q101
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VLZ36B-GS08 VLZ_Series.pdf
VLZ36B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33.64V 500MW SOD80
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VLZ39E-GS08 VLZ_Series.pdf
VLZ39E-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 38.33V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 38.33 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 35.5 V
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VLZ47-GS08 VLZ_Series.pdf
VLZ47-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 46.5V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 46.5 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 40 µA @ 41.8 V
Qualification: AEC-Q101
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VLZ4V7B-GS08 VLZ_Series.pdf
VLZ4V7B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.68V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.68 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 2 V
Qualification: AEC-Q101
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VLZ4V7-GS08 VLZ_Series.pdf
VLZ4V7-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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VLZ9V1A-GS08 VLZ_Series.pdf
VLZ9V1A-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.51V 500MW SOD80
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VLZ9V1C-GS08 VLZ_Series.pdf
VLZ9V1C-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 500MW SOD80
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PB3006-E3/45 pb3006.pdf
PB3006-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 404 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+313.38 грн
20+134.28 грн
100+129.09 грн
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PB3010-E3/45 pb3006.pdf
PB3010-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+313.38 грн
20+169.42 грн
100+141.81 грн
500+107.70 грн
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PB4010-E3/45 pb4006.pdf
PB4010-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 40A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 3908 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+321.85 грн
20+183.73 грн
100+146.03 грн
500+113.33 грн
1000+105.72 грн
2000+105.46 грн
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V10150SHM3/4W v10150s.pdf
V10150SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V10150S-M3/4W v10150s.pdf
V10150S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V20100SG-M3/4W v20100sg.pdf
V20100SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A TO220-3
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V20120CHM3/4W v20120c.pdf
V20120CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 8 µA @ 90 V
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V20120C-M3/4W v20120c.pdf
V20120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 700 µA @ 120 V
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V20120SGHM3/4W v20120sg.pdf
V20120SGHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Qualification: AEC-Q101
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V20120SG-M3/4W v20120sg.pdf
V20120SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20120SHM3/4W v20120s.pdf
V20120SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
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V20120S-M3/4W v20120s.pdf
V20120S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20150CHM3/4W v20150c.pdf
V20150CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150C-M3/4W v20150c.pdf
V20150C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150SGHM3/4W v20150sg.pdf
V20150SGHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150SG-M3/4W v20150sg.pdf
V20150SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A TO220-3
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V20150SHM3/4W v20150s.pdf
V20150SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150S-M3/4W v20150s.pdf
V20150S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20M100M-E3/4W v20m100m.pdf
V20M100M-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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V30100CHM3/4W v30100c.pdf
V30100CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V30100C-M3/4W v30100c.pdf
V30100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.78 грн
50+82.26 грн
100+73.90 грн
500+55.60 грн
Мінімальне замовлення: 2
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V30100SGHM3/4W v30100sg.pdf
V30100SGHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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V30100SG-M3/4W v30100sg.pdf
V30100SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
товару немає в наявності
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V30100SHM3/4W v30100s.pdf
V30100SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V30100S-M3/4W v30100s.pdf
V30100S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
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V30120CHM3/4W v30120c.pdf
V30120CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V30120C-M3/4W v30120c.pdf
V30120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V30120SG-M3/4W v30120sg.pdf
V30120SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A TO220-3
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В кошику  од. на суму  грн.
V30150CHM3/4W v30150c.pdf
V30150CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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V40100CHM3/4W v40100c.pdf
V40100CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V40100GHM3/4W v40100g.pdf
V40100GHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V40100G-M3/4W v40100g.pdf
V40100G-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
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