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VLZ4V7B-GS08 VLZ4V7B-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 4.68V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.68 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 2 V
Qualification: AEC-Q101
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VLZ4V7-GS08 VLZ4V7-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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VLZ9V1A-GS08 VLZ9V1A-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 8.51V 500MW SOD80
товару немає в наявності
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VLZ9V1C-GS08 VLZ9V1C-GS08 Vishay General Semiconductor - Diodes Division VLZ_Series.pdf Description: DIODE ZENER 9.07V 500MW SOD80
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PB3006-E3/45 PB3006-E3/45 Vishay General Semiconductor - Diodes Division pb3006.pdf Description: BRIDGE RECT 1PHASE 600V 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 404 шт:
термін постачання 21-31 дні (днів)
1+337.02 грн
20+144.41 грн
100+138.82 грн
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PB3010-E3/45 PB3010-E3/45 Vishay General Semiconductor - Diodes Division pb3006.pdf Description: BRIDGE RECT 1PHASE 1KV 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
1+337.02 грн
20+182.20 грн
100+152.51 грн
500+115.82 грн
В кошику  од. на суму  грн.
PB4010-E3/45 PB4010-E3/45 Vishay General Semiconductor - Diodes Division pb4006.pdf Description: BRIDGE RECT 1PHASE 1KV 40A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)
1+348.61 грн
20+199.31 грн
100+158.40 грн
500+122.93 грн
1000+114.67 грн
2000+114.40 грн
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V10150SHM3/4W V10150SHM3/4W Vishay General Semiconductor - Diodes Division v10150s.pdf Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V10150S-M3/4W V10150S-M3/4W Vishay General Semiconductor - Diodes Division v10150s.pdf Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V20100SG-M3/4W V20100SG-M3/4W Vishay General Semiconductor - Diodes Division v20100sg.pdf Description: DIODE SCHOTTKY 100V 20A TO220-3
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V20120SGHM3/4W V20120SGHM3/4W Vishay General Semiconductor - Diodes Division v20120sg.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Qualification: AEC-Q101
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V20120SG-M3/4W V20120SG-M3/4W Vishay General Semiconductor - Diodes Division v20120sg.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20120SHM3/4W V20120SHM3/4W Vishay General Semiconductor - Diodes Division v20120s.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
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V20120S-M3/4W V20120S-M3/4W Vishay General Semiconductor - Diodes Division v20120s.pdf Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20150CHM3/4W V20150CHM3/4W Vishay General Semiconductor - Diodes Division v20150c.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150C-M3/4W V20150C-M3/4W Vishay General Semiconductor - Diodes Division v20150c.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150SGHM3/4W V20150SGHM3/4W Vishay General Semiconductor - Diodes Division v20150sg.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150SG-M3/4W V20150SG-M3/4W Vishay General Semiconductor - Diodes Division v20150sg.pdf Description: DIODE SCHOTTKY 150V 20A TO220-3
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V20150SHM3/4W V20150SHM3/4W Vishay General Semiconductor - Diodes Division v20150s.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150S-M3/4W V20150S-M3/4W Vishay General Semiconductor - Diodes Division v20150s.pdf Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20M100M-E3/4W V20M100M-E3/4W Vishay General Semiconductor - Diodes Division v20m100m.pdf Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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V30100CHM3/4W V30100CHM3/4W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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V30100C-M3/4W V30100C-M3/4W Vishay General Semiconductor - Diodes Division v30100c.pdf Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
2+187.97 грн
50+88.46 грн
100+79.48 грн
500+59.79 грн
Мінімальне замовлення: 2
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V30100SGHM3/4W V30100SGHM3/4W Vishay General Semiconductor - Diodes Division v30100sg.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
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V30100SG-M3/4W V30100SG-M3/4W Vishay General Semiconductor - Diodes Division v30100sg.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
товару немає в наявності
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V30100SHM3/4W V30100SHM3/4W Vishay General Semiconductor - Diodes Division v30100s.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
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V30100S-M3/4W V30100S-M3/4W Vishay General Semiconductor - Diodes Division v30100s.pdf Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
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V30120CHM3/4W V30120CHM3/4W Vishay General Semiconductor - Diodes Division v30120c.pdf Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V30120C-M3/4W V30120C-M3/4W Vishay General Semiconductor - Diodes Division v30120c.pdf Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V30120SG-M3/4W V30120SG-M3/4W Vishay General Semiconductor - Diodes Division v30120sg.pdf Description: DIODE SCHOTTKY 120V 30A TO220-3
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V30150CHM3/4W V30150CHM3/4W Vishay General Semiconductor - Diodes Division v30150c.pdf Description: DIODE ARR SCHOT 150V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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V40100CHM3/4W V40100CHM3/4W Vishay General Semiconductor - Diodes Division v40100c.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Qualification: AEC-Q101
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V40100GHM3/4W V40100GHM3/4W Vishay General Semiconductor - Diodes Division v40100g.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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V40100G-M3/4W V40100G-M3/4W Vishay General Semiconductor - Diodes Division v40100g.pdf Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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V40120CHM3/4W V40120CHM3/4W Vishay General Semiconductor - Diodes Division v40120c.pdf Description: DIODE SCHOTTKY 40A 120V TO-220AB
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V40120C-M3/4W V40120C-M3/4W Vishay General Semiconductor - Diodes Division v40120c.pdf Description: DIODE SCHOTTKY 40A 120V TO-220AB
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V40M120CHM3/4W V40M120CHM3/4W Vishay General Semiconductor - Diodes Division v40m120c.pdf Description: DIODE ARR SCHOT 120V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
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V40M120C-M3/4W V40M120C-M3/4W Vishay General Semiconductor - Diodes Division v40m120c.pdf Description: DIODE ARR SCHOT 120V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
2+167.27 грн
10+133.72 грн
100+106.39 грн
500+84.49 грн
1000+71.69 грн
2000+68.10 грн
5000+64.47 грн
Мінімальне замовлення: 2
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V60100CHM3/4W V60100CHM3/4W Vishay General Semiconductor - Diodes Division v60100c.pdf Description: DIODE SCHOTTKY 60A 100V TO-220AB
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V60100C-M3/4W V60100C-M3/4W Vishay General Semiconductor - Diodes Division v60100c.pdf Description: DIODE SCHOTTKY 60A 100V TO-220AB
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+231.03 грн
10+199.74 грн
100+160.57 грн
500+123.80 грн
1000+110.12 грн
Мінімальне замовлення: 2
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V80H150PW-M3/4W V80H150PW-M3/4W Vishay General Semiconductor - Diodes Division Description: DIODE ARR SCHOTT 150V 40A TO-3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
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VB10150C-M3/4W VB10150C-M3/4W Vishay General Semiconductor - Diodes Division vb10150c-m3.pdf Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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VB10150S-M3/4W VB10150S-M3/4W Vishay General Semiconductor - Diodes Division vb10150s-m3.pdf Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
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VB20100C-M3/4W VB20100C-M3/4W Vishay General Semiconductor - Diodes Division vb20100c.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
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VB20100SG-E3/4W VB20100SG-E3/4W Vishay General Semiconductor - Diodes Division v20100sg.pdf Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 20 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
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VB20100S-M3/4W VB20100S-M3/4W Vishay General Semiconductor - Diodes Division v20100s-m3.pdf Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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VB20120SG-M3/4W VB20120SG-M3/4W Vishay General Semiconductor - Diodes Division vb20120sg-m3.pdf Description: DIODE SCHOTTKY 120V 20A TO263AB
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VB30100C-M3/4W VB30100C-M3/4W Vishay General Semiconductor - Diodes Division vb30100c.pdf Description: DIODE SCHOTTKY 30A 100V TO-263AB
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VB30100SG-M3/4W VB30100SG-M3/4W Vishay General Semiconductor - Diodes Division vb30100sg-m3.pdf Description: DIODE SCHOTTKY 100V 30A TO263AB
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VB30100S-M3/4W VB30100S-M3/4W Vishay General Semiconductor - Diodes Division vb30100s-m3.pdf Description: DIODE SCHOTTKY 30A 100V TO-263AB
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VB30150C-M3/4W VB30150C-M3/4W Vishay General Semiconductor - Diodes Division vb30150c-m3.pdf Description: DIODE ARR SCHOT 150V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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VB40100C-M3/4W VB40100C-M3/4W Vishay General Semiconductor - Diodes Division vb40100c.pdf Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VB40120C-M3/4W VB40120C-M3/4W Vishay General Semiconductor - Diodes Division v40120c.pdf Description: DIODE SCHOTTKY 40A 120V TO-263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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VB40150C-M3/4W Vishay General Semiconductor - Diodes Division vb30150c-m3.pdf Description: DIODE SCHOTTKY 40A 150V TO-263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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VB40M120C-E3/4W VB40M120C-E3/4W Vishay General Semiconductor - Diodes Division vb40m120c.pdf Description: DIODE ARR SCHOT 120V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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VB60100C-M3/4W VB60100C-M3/4W Vishay General Semiconductor - Diodes Division vb60100c.pdf Description: DIODE SCHOTTKY 60A 100V TO-263AB
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VB60170G-E3/4W VB60170G-E3/4W Vishay General Semiconductor - Diodes Division vb60170g.pdf Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
на замовлення 8200 шт:
термін постачання 21-31 дні (днів)
2+269.12 грн
50+205.65 грн
100+176.26 грн
500+147.04 грн
1000+125.90 грн
2000+118.55 грн
5000+111.87 грн
Мінімальне замовлення: 2
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VBT1045BP-M3/4W VBT1045BP-M3/4W Vishay General Semiconductor - Diodes Division vbt1045bp-m3.pdf Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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VBT1045CBP-E3/4W VBT1045CBP-E3/4W Vishay General Semiconductor - Diodes Division vbt145cb.pdf Description: DIODE ARR SCHOTT 45V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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VBT1045CBP-M3/4W VBT1045CBP-M3/4W Vishay General Semiconductor - Diodes Division vbt145cb-m3.pdf Description: DIODE ARR SCHOTT 45V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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VLZ4V7B-GS08 VLZ_Series.pdf
VLZ4V7B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.68V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.68 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 2 V
Qualification: AEC-Q101
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VLZ4V7-GS08 VLZ_Series.pdf
VLZ4V7-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Qualification: AEC-Q101
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VLZ9V1A-GS08 VLZ_Series.pdf
VLZ9V1A-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.51V 500MW SOD80
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VLZ9V1C-GS08 VLZ_Series.pdf
VLZ9V1C-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 500MW SOD80
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PB3006-E3/45 pb3006.pdf
PB3006-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 404 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.02 грн
20+144.41 грн
100+138.82 грн
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PB3010-E3/45 pb3006.pdf
PB3010-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 30A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 30 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.02 грн
20+182.20 грн
100+152.51 грн
500+115.82 грн
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PB4010-E3/45 pb4006.pdf
PB4010-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 1KV 40A PB
Packaging: Tube
Package / Case: 4-SIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ PB
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 40 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 3943 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+348.61 грн
20+199.31 грн
100+158.40 грн
500+122.93 грн
1000+114.67 грн
2000+114.40 грн
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V10150SHM3/4W v10150s.pdf
V10150SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V10150S-M3/4W v10150s.pdf
V10150S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 10A 150V TO-220AB
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V20100SG-M3/4W v20100sg.pdf
V20100SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A TO220-3
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V20120SGHM3/4W v20120sg.pdf
V20120SGHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
Qualification: AEC-Q101
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V20120SG-M3/4W v20120sg.pdf
V20120SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20120SHM3/4W v20120s.pdf
V20120SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 120 V
Qualification: AEC-Q101
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V20120S-M3/4W v20120s.pdf
V20120S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 20 A
Current - Reverse Leakage @ Vr: 250 µA @ 120 V
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V20150CHM3/4W v20150c.pdf
V20150CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150C-M3/4W v20150c.pdf
V20150C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
товару немає в наявності
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V20150SGHM3/4W v20150sg.pdf
V20150SGHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
товару немає в наявності
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V20150SG-M3/4W v20150sg.pdf
V20150SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A TO220-3
товару немає в наявності
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V20150SHM3/4W v20150s.pdf
V20150SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20150S-M3/4W v20150s.pdf
V20150S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20A 150V TO-220AB
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V20M100M-E3/4W v20m100m.pdf
V20M100M-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
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V30100CHM3/4W v30100c.pdf
V30100CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
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V30100C-M3/4W v30100c.pdf
V30100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+187.97 грн
50+88.46 грн
100+79.48 грн
500+59.79 грн
Мінімальне замовлення: 2
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V30100SGHM3/4W v30100sg.pdf
V30100SGHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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V30100SG-M3/4W v30100sg.pdf
V30100SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
товару немає в наявності
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V30100SHM3/4W v30100s.pdf
V30100SHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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V30100S-M3/4W v30100s.pdf
V30100S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
товару немає в наявності
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V30120CHM3/4W v30120c.pdf
V30120CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Qualification: AEC-Q101
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V30120C-M3/4W v30120c.pdf
V30120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
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V30120SG-M3/4W v30120sg.pdf
V30120SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A TO220-3
товару немає в наявності
В кошику  од. на суму  грн.
V30150CHM3/4W v30150c.pdf
V30150CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
товару немає в наявності
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V40100CHM3/4W v40100c.pdf
V40100CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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V40100GHM3/4W v40100g.pdf
V40100GHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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V40100G-M3/4W v40100g.pdf
V40100G-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
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V40120CHM3/4W v40120c.pdf
V40120CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40A 120V TO-220AB
товару немає в наявності
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V40120C-M3/4W v40120c.pdf
V40120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40A 120V TO-220AB
товару немає в наявності
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V40M120CHM3/4W v40m120c.pdf
V40M120CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
товару немає в наявності
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V40M120C-M3/4W v40m120c.pdf
V40M120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.27 грн
10+133.72 грн
100+106.39 грн
500+84.49 грн
1000+71.69 грн
2000+68.10 грн
5000+64.47 грн
Мінімальне замовлення: 2
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V60100CHM3/4W v60100c.pdf
V60100CHM3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60A 100V TO-220AB
товару немає в наявності
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V60100C-M3/4W v60100c.pdf
V60100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60A 100V TO-220AB
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+231.03 грн
10+199.74 грн
100+160.57 грн
500+123.80 грн
1000+110.12 грн
Мінімальне замовлення: 2
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V80H150PW-M3/4W
V80H150PW-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 40A TO-3PW
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-3PW
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 910 mV @ 40 A
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
товару немає в наявності
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VB10150C-M3/4W vb10150c-m3.pdf
VB10150C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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VB10150S-M3/4W vb10150s-m3.pdf
VB10150S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
товару немає в наявності
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VB20100C-M3/4W vb20100c.pdf
VB20100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
товару немає в наявності
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VB20100SG-E3/4W v20100sg.pdf
VB20100SG-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 20 A
Current - Reverse Leakage @ Vr: 350 µA @ 100 V
товару немає в наявності
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VB20100S-M3/4W v20100s-m3.pdf
VB20100S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
товару немає в наявності
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VB20120SG-M3/4W vb20120sg-m3.pdf
VB20120SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO263AB
товару немає в наявності
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VB30100C-M3/4W vb30100c.pdf
VB30100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30A 100V TO-263AB
товару немає в наявності
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VB30100SG-M3/4W vb30100sg-m3.pdf
VB30100SG-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 30A TO263AB
товару немає в наявності
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VB30100S-M3/4W vb30100s-m3.pdf
VB30100S-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30A 100V TO-263AB
товару немає в наявності
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VB30150C-M3/4W vb30150c-m3.pdf
VB30150C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 150V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
товару немає в наявності
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VB40100C-M3/4W vb40100c.pdf
VB40100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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VB40120C-M3/4W v40120c.pdf
VB40120C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40A 120V TO-263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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VB40150C-M3/4W vb30150c-m3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40A 150V TO-263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
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VB40M120C-E3/4W vb40m120c.pdf
VB40M120C-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 120V 20A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
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VB60100C-M3/4W vb60100c.pdf
VB60100C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60A 100V TO-263AB
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VB60170G-E3/4W vb60170g.pdf
VB60170G-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 170V 30A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 30 A
Current - Reverse Leakage @ Vr: 450 µA @ 170 V
на замовлення 8200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.12 грн
50+205.65 грн
100+176.26 грн
500+147.04 грн
1000+125.90 грн
2000+118.55 грн
5000+111.87 грн
Мінімальне замовлення: 2
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VBT1045BP-M3/4W vbt1045bp-m3.pdf
VBT1045BP-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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VBT1045CBP-E3/4W vbt145cb.pdf
VBT1045CBP-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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VBT1045CBP-M3/4W vbt145cb-m3.pdf
VBT1045CBP-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 5 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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