Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (36333) > Сторінка 50 з 606
| Фото | Назва | Виробник | Інформація |
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VF30120C-E3/4W | Vishay General Semiconductor - Diodes Division |
 Description: DIODE ARR SCHOTT 120V ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A Current - Reverse Leakage @ Vr: 800 µA @ 120 V |
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VF30120S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 30A ITO220AB |
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VF30120SG-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 30A ITO220AB |
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VF30150C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 150V ITO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A Current - Reverse Leakage @ Vr: 200 µA @ 150 V |
на замовлення 652 шт: термін постачання 21-31 дні (днів) |
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VF40150C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 150V ITO220 |
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VI10150S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 10A TO262AA |
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VI20100C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 100V TO262 |
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VI20120C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 120V TO262 |
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VI20120SG-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 20A TO262AA |
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VI20150C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 150V TO262 |
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VI20150S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 20A TO262AA |
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VI20150SG-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 150V 20A TO262AA |
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VI30100C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 100V TO262 |
на замовлення 956 шт: термін постачання 21-31 дні (днів) |
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VI30120S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 30A TO262AA |
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VI30120SG-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 30A TO262AA |
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VI30200C-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARRAY SCHOTTKY 200V TO262 |
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V10P10-E3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 100 V |
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V12P10-E3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 12A TO277A |
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V8P10-E3/87A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 8A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
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VB20100S-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
на замовлення 11200 шт: термін постачання 21-31 дні (днів) |
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VS-6CWQ06FNPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 60V 3.5A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A Current - Reverse Leakage @ Vr: 2 mA @ 60 V |
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VS-70TPS12PBF | Vishay General Semiconductor - Diodes Division |
 Description: SCR 1.2KV 75A SUPER-247Packaging: Bulk Package / Case: TO-274AA Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A @ 50Hz Current - On State (It (AV)) (Max): 70 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.4 V Current - Off State (Max): 1 mA Supplier Device Package: SUPER-247™ (TO-274AA) Part Status: Active Current - On State (It (RMS)) (Max): 75 A Voltage - Off State: 1.2 kV |
на замовлення 337 шт: термін постачання 21-31 дні (днів) |
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VS-100MT160PAPBF | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 3P 1.6KV 100A 7MTPB Packaging: Bulk Package / Case: 7-MTPB Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: 7-MTPB Part Status: Active Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 100 A Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A |
на замовлення 43 шт: термін постачання 21-31 дні (днів) |
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VS-8EWS10SPBF | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 8A DPAK Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1000 V |
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VBUS051BD-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 16VC LLP1006-2L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 145°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.9V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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VCUT0505B-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 18pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: LLP1006-2L Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 56W Power Line Protection: No Part Status: Active |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
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VCUT0714A-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 14VWM LLP1006-2L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: RS-485 Capacitance @ Frequency: 8pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs) Voltage - Reverse Standoff (Typ): 7V, 14V Supplier Device Package: LLP1006-2L Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V, 14.5V Voltage - Clamping (Max) @ Ipp: 17V, 30V Power - Peak Pulse: 54W, 63W Power Line Protection: No |
на замовлення 56000 шт: термін постачання 21-31 дні (днів) |
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VESD03A1B-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 31W Power Line Protection: No |
на замовлення 64000 шт: термін постачання 21-31 дні (днів) |
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VESD05A1A-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC LLP1006-2L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 130pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 192W Power Line Protection: No |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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VESD05A1B-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 11VC LLP1006-2L Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 33W Power Line Protection: No Part Status: Active |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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VESD05A4A-HS4-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC LLP1010-6L Packaging: Tape & Reel (TR) Package / Case: 5-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1010-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 30W Power Line Protection: No |
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VEMI65AB-HCI-GS08 | Vishay General Semiconductor - Diodes Division |
Description: FILTER RC(PI) 100 OHM/24PF SMD Packaging: Tape & Reel (TR) Package / Case: 13-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 125°C Values: R = 100Ohms, C = 24pF Height: 0.024" (0.60mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 130MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 Current: 4 A |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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VESD09A4A-HS4-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 9VWM 23VC LLP1010-5L |
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VBUS051BD-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 16VC LLP1006-2L Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 145°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.9pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.9V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 45W Power Line Protection: No |
на замовлення 25445 шт: термін постачання 21-31 дні (днів) |
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VCUT0505B-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 18pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: LLP1006-2L Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 56W Power Line Protection: No Part Status: Active |
на замовлення 40602 шт: термін постачання 21-31 дні (днів) |
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VCUT0714A-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 7VWM 14VWM LLP1006-2L Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: RS-485 Capacitance @ Frequency: 8pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs) Voltage - Reverse Standoff (Typ): 7V, 14V Supplier Device Package: LLP1006-2L Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.3V, 14.5V Voltage - Clamping (Max) @ Ipp: 17V, 30V Power - Peak Pulse: 54W, 63W Power Line Protection: No |
на замовлення 68208 шт: термін постачання 21-31 дні (днів) |
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VESD03A1B-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 5V Voltage - Clamping (Max) @ Ipp: 9V Power - Peak Pulse: 31W Power Line Protection: No |
на замовлення 77335 шт: термін постачання 21-31 дні (днів) |
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VESD05A1A-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC LLP1006-2L Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 130pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 192W Power Line Protection: No |
на замовлення 32737 шт: термін постачання 21-31 дні (днів) |
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VESD05A1B-HD1-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 11VC LLP1006-2L Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1006-2L Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11V Power - Peak Pulse: 33W Power Line Protection: No Part Status: Active |
на замовлення 25316 шт: термін постачання 21-31 дні (днів) |
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VESD05A4A-HS4-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 12VC LLP1010-6L Packaging: Cut Tape (CT) Package / Case: 5-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: LLP1010-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 30W Power Line Protection: No |
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VEMI65AB-HCI-GS08 | Vishay General Semiconductor - Diodes Division |
Description: FILTER RC(PI) 100 OHM/24PF SMD Packaging: Cut Tape (CT) Package / Case: 13-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 125°C Values: R = 100Ohms, C = 24pF Height: 0.024" (0.60mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 130MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 Current: 4 A |
на замовлення 14375 шт: термін постачання 21-31 дні (днів) |
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VESD09A4A-HS4-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 9VWM 23VC LLP1010-5L |
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VBUS054B-HSF-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 5VWM 15VC LLP75-6L Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Min) Supplier Device Package: LLP75-6L Unidirectional Channels: 4 Voltage - Breakdown (Min): 6.9V Voltage - Clamping (Max) @ Ipp: 15V Power - Peak Pulse: 45W Power Line Protection: Yes |
на замовлення 18441 шт: термін постачання 21-31 дні (днів) |
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VESD12A1C-02Z-GS08 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 12VWM 23VC SOD923 Packaging: Cut Tape (CT) Package / Case: SOD-923 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 4A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOD-923 Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.5V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 92W Power Line Protection: No Part Status: Obsolete |
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BU10065S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.2A BU-5S |
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BU1006A5S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3A BU-5S |
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BU1006A-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3A BU |
товар відсутній |
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BU1006A-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3A BU |
товар відсутній |
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BU1006-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.2A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.2 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 742 шт: термін постачання 21-31 дні (днів) |
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BU1006-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.2A BU |
товар відсутній |
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BU1010A5S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3A BU-5S |
товар відсутній |
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BU1010A-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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BU1010A-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3A BU Packaging: Bulk Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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BU1010-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.2A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.2 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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BU1010-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 1KV 3.2A BU Packaging: Bulk Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 3.2 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товар відсутній |
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BU12065S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.4A BU-5S |
товар відсутній |
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BU1206-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.4A BU Packaging: Tube Package / Case: 4-SIP, BU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: isoCINK+™ BU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 3.4 A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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BU1206-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 600V 3.4A BU |
товар відсутній |
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BU12085S-E3/45 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.4A BU-5S |
товар відсутній |
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BU1208-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 800V 3.4A BU |
товар відсутній |
| VF30120C-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 120V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
Description: DIODE ARR SCHOTT 120V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 15 A
Current - Reverse Leakage @ Vr: 800 µA @ 120 V
товар відсутній
| VF30120S-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A ITO220AB
Description: DIODE SCHOTTKY 120V 30A ITO220AB
товар відсутній
| VF30120SG-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A ITO220AB
Description: DIODE SCHOTTKY 120V 30A ITO220AB
товар відсутній
| VF30150C-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Description: DIODE ARRAY SCHOTTKY 150V ITO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
на замовлення 652 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 168.48 грн |
| 10+ | 145.81 грн |
| 100+ | 117.17 грн |
| 500+ | 90.35 грн |
| VF40150C-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V ITO220
Description: DIODE ARRAY SCHOTTKY 150V ITO220
товар відсутній
| VI10150S-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 10A TO262AA
Description: DIODE SCHOTTKY 150V 10A TO262AA
товар відсутній
| VI20100C-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO262
Description: DIODE ARRAY SCHOTTKY 100V TO262
товар відсутній
| VI20120C-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 120V TO262
Description: DIODE ARRAY SCHOTTKY 120V TO262
товар відсутній
| VI20120SG-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 20A TO262AA
Description: DIODE SCHOTTKY 120V 20A TO262AA
товар відсутній
| VI20150C-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 150V TO262
Description: DIODE ARRAY SCHOTTKY 150V TO262
товар відсутній
| VI20150S-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A TO262AA
Description: DIODE SCHOTTKY 150V 20A TO262AA
товар відсутній
| VI20150SG-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 20A TO262AA
Description: DIODE SCHOTTKY 150V 20A TO262AA
товар відсутній
| VI30100C-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 100V TO262
Description: DIODE ARRAY SCHOTTKY 100V TO262
на замовлення 956 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.54 грн |
| 10+ | 109.74 грн |
| 100+ | 88.17 грн |
| 500+ | 67.99 грн |
| VI30120S-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A TO262AA
Description: DIODE SCHOTTKY 120V 30A TO262AA
товар відсутній
| VI30120SG-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 30A TO262AA
Description: DIODE SCHOTTKY 120V 30A TO262AA
товар відсутній
| VI30200C-E3/4W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 200V TO262
Description: DIODE ARRAY SCHOTTKY 200V TO262
товар відсутній
| V10P10-E3/87A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
Description: DIODE SCHOTTKY 100V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 100 V
товар відсутній
| V12P10-E3/87A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 12A TO277A
Description: DIODE SCHOTTKY 100V 12A TO277A
товар відсутній
| V8P10-E3/87A |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
товар відсутній
| VB20100S-E3/8W |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 20 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 11200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 53.79 грн |
| 1600+ | 42.2 грн |
| 2400+ | 39.72 грн |
| 5600+ | 35.5 грн |
| VS-6CWQ06FNPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
Description: DIODE ARR SCHOTT 60V 3.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 610 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 mA @ 60 V
товар відсутній
| VS-70TPS12PBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 75A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A @ 50Hz
Current - On State (It (AV)) (Max): 70 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 1 mA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.2 kV
Description: SCR 1.2KV 75A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1400A @ 50Hz
Current - On State (It (AV)) (Max): 70 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.4 V
Current - Off State (Max): 1 mA
Supplier Device Package: SUPER-247™ (TO-274AA)
Part Status: Active
Current - On State (It (RMS)) (Max): 75 A
Voltage - Off State: 1.2 kV
на замовлення 337 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 520.38 грн |
| 10+ | 429.78 грн |
| 100+ | 358.18 грн |
| VS-100MT160PAPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3P 1.6KV 100A 7MTPB
Packaging: Bulk
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
Description: BRIDGE RECT 3P 1.6KV 100A 7MTPB
Packaging: Bulk
Package / Case: 7-MTPB
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 7-MTPB
Part Status: Active
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 100 A
Voltage - Forward (Vf) (Max) @ If: 1.51 V @ 100 A
на замовлення 43 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2521.58 грн |
| 15+ | 2157.41 грн |
| VS-8EWS10SPBF |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
Description: DIODE GEN PURP 1KV 8A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1000 V
товар відсутній
| VBUS051BD-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5VWM 16VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 5.22 грн |
| 16000+ | 4.45 грн |
| 24000+ | 4.4 грн |
| VCUT0505B-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 4.91 грн |
| 16000+ | 4.09 грн |
| 24000+ | 4.01 грн |
| VCUT0714A-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 14VWM LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RS-485
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V, 14V
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V, 14.5V
Voltage - Clamping (Max) @ Ipp: 17V, 30V
Power - Peak Pulse: 54W, 63W
Power Line Protection: No
Description: TVS DIODE 7VWM 14VWM LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RS-485
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V, 14V
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V, 14.5V
Voltage - Clamping (Max) @ Ipp: 17V, 30V
Power - Peak Pulse: 54W, 63W
Power Line Protection: No
на замовлення 56000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 4.91 грн |
| 16000+ | 4.09 грн |
| 24000+ | 4.01 грн |
| 56000+ | 3.12 грн |
| VESD03A1B-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
на замовлення 64000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 5.22 грн |
| 16000+ | 4.45 грн |
| 24000+ | 4.4 грн |
| 56000+ | 3.51 грн |
| VESD05A1A-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 5.17 грн |
| 16000+ | 4.41 грн |
| VESD05A1B-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8000+ | 5.49 грн |
| 16000+ | 4.82 грн |
| VESD05A4A-HS4-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
| VEMI65AB-HCI-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.92 грн |
| 6000+ | 13.41 грн |
| VESD09A4A-HS4-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 23VC LLP1010-5L
Description: TVS DIODE 9VWM 23VC LLP1010-5L
товар відсутній
| VBUS051BD-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
Description: TVS DIODE 5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 45W
Power Line Protection: No
на замовлення 25445 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.17 грн |
| 17+ | 16.5 грн |
| 100+ | 8.33 грн |
| 500+ | 6.93 грн |
| 1000+ | 5.39 грн |
| 2000+ | 4.83 грн |
| VCUT0505B-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 16VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 56W
Power Line Protection: No
Part Status: Active
на замовлення 40602 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.44 грн |
| 15+ | 19.24 грн |
| 100+ | 9.7 грн |
| 500+ | 7.43 грн |
| 1000+ | 5.51 грн |
| 2000+ | 4.64 грн |
| VCUT0714A-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 14VWM LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RS-485
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V, 14V
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V, 14.5V
Voltage - Clamping (Max) @ Ipp: 17V, 30V
Power - Peak Pulse: 54W, 63W
Power Line Protection: No
Description: TVS DIODE 7VWM 14VWM LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: RS-485
Capacitance @ Frequency: 8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A, 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V, 14V
Supplier Device Package: LLP1006-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.3V, 14.5V
Voltage - Clamping (Max) @ Ipp: 17V, 30V
Power - Peak Pulse: 54W, 63W
Power Line Protection: No
на замовлення 68208 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.44 грн |
| 15+ | 19.24 грн |
| 100+ | 9.7 грн |
| 500+ | 7.43 грн |
| 1000+ | 5.51 грн |
| 2000+ | 4.64 грн |
| VESD03A1B-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
Description: TVS DIODE 3.3VWM 9VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 31W
Power Line Protection: No
на замовлення 77335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.17 грн |
| 17+ | 16.5 грн |
| 100+ | 8.33 грн |
| 500+ | 6.93 грн |
| 1000+ | 5.39 грн |
| 2000+ | 4.83 грн |
| VESD05A1A-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
Description: TVS DIODE 5VWM 12VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 130pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 192W
Power Line Protection: No
на замовлення 32737 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 24.17 грн |
| 17+ | 16.36 грн |
| 100+ | 8.25 грн |
| 500+ | 6.86 грн |
| 1000+ | 5.34 грн |
| 2000+ | 4.78 грн |
| VESD05A1B-HD1-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 11VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V
Power - Peak Pulse: 33W
Power Line Protection: No
Part Status: Active
на замовлення 25316 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 26.3 грн |
| 15+ | 18.96 грн |
| 100+ | 11.82 грн |
| 500+ | 7.59 грн |
| 1000+ | 5.84 грн |
| 2000+ | 5.26 грн |
| VESD05A4A-HS4-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5VWM 12VC LLP1010-6L
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: LLP1010-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 30W
Power Line Protection: No
товар відсутній
| VEMI65AB-HCI-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Cut Tape (CT)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
Description: FILTER RC(PI) 100 OHM/24PF SMD
Packaging: Cut Tape (CT)
Package / Case: 13-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.053" W (2.50mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 125°C
Values: R = 100Ohms, C = 24pF
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 130MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 4 A
на замовлення 14375 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.68 грн |
| 25+ | 23.47 грн |
| 50+ | 19.76 грн |
| 100+ | 17.98 грн |
| 250+ | 17.08 грн |
| 500+ | 15.03 грн |
| 1000+ | 14.14 грн |
| VESD09A4A-HS4-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 9VWM 23VC LLP1010-5L
Description: TVS DIODE 9VWM 23VC LLP1010-5L
товар відсутній
| VBUS054B-HSF-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5VWM 15VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: Yes
Description: TVS DIODE 5VWM 15VC LLP75-6L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Min)
Supplier Device Package: LLP75-6L
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: Yes
на замовлення 18441 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 41.23 грн |
| 10+ | 34.91 грн |
| 100+ | 24.17 грн |
| 500+ | 18.95 грн |
| 1000+ | 16.13 грн |
| VESD12A1C-02Z-GS08 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 23VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 92W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 12VWM 23VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.5V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 92W
Power Line Protection: No
Part Status: Obsolete
товар відсутній
| BU10065S-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
Description: BRIDGE RECT 1P 600V 3.2A BU-5S
товар відсутній
| BU1006A5S-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU-5S
Description: BRIDGE RECT 1P 600V 3A BU-5S
товар відсутній
| BU1006A-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Description: BRIDGE RECT 1P 600V 3A BU
товар відсутній
| BU1006A-E3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Description: BRIDGE RECT 1P 600V 3A BU
товар відсутній
| BU1006-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 742 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 144.31 грн |
| 10+ | 125 грн |
| 100+ | 100.46 грн |
| 500+ | 77.46 грн |
| BU1006-E3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.2A BU
Description: BRIDGE RECT 1P 600V 3.2A BU
товар відсутній
| BU1010A5S-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU-5S
Description: BRIDGE RECT 1P 1KV 3A BU-5S
товар відсутній
| BU1010A-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| BU1010A-E3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 3A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| BU1010-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| BU1010-E3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 3.2A BU
Packaging: Bulk
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 3.2 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товар відсутній
| BU12065S-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
Description: BRIDGE RECT 1P 600V 3.4A BU-5S
товар відсутній
| BU1206-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 3.4A BU
Packaging: Tube
Package / Case: 4-SIP, BU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: isoCINK+™ BU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 3.4 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 149.29 грн |
| 10+ | 128.84 грн |
| 100+ | 103.58 грн |
| BU1206-E3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3.4A BU
Description: BRIDGE RECT 1P 600V 3.4A BU
товар відсутній
| BU12085S-E3/45 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
Description: BRIDGE RECT 1P 800V 3.4A BU-5S
товар відсутній
| BU1208-E3/51 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 3.4A BU
Description: BRIDGE RECT 1P 800V 3.4A BU
товар відсутній