Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (41158) > Сторінка 527 з 686
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BZX384C18-HG3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 200MW SOD323 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 15000 шт В кошику од. на суму грн. | |||||||||||||||
| BZX384C18-HG3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 18V 200MW SOD323 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: SOD-323 Grade: Automotive Part Status: Active Power - Max: 200 mW Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
V10K100C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTTKY 100V FLATPAKQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 400 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io) (per Diode): 3.9A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10K100C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTTKY 100V FLATPAKQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 400 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 100 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io) (per Diode): 3.9A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 2351 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10PWM12HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 10A SLIMDPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 400 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 1130pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||||
|
V10PWM12HM3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 10A SLIMDPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 400 µA @ 120 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 1130pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Packaging: Cut Tape (CT) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 |
на замовлення 4490 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10KM60C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 4.8A FLATPAKCurrent - Reverse Leakage @ Vr: 600 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io) (per Diode): 4.8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10KM60C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 60V 4.8A FLATPAKCurrent - Reverse Leakage @ Vr: 600 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io) (per Diode): 4.8A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10DM153CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DUAL 150V, 10A TMBS (TRENCH MOSCurrent - Reverse Leakage @ Vr: 50 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Packaging: Tape & Reel (TR) |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10DM153CHM3/I | Vishay General Semiconductor - Diodes Division |
Description: DUAL 150V, 10A TMBS (TRENCH MOSCurrent - Reverse Leakage @ Vr: 50 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-263AC (SMPD) Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant Packaging: Cut Tape (CT) Part Status: Active |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10KM120C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTTKY 120V FLATPAKPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.9A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 120 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10KM120C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTTKY 120V FLATPAKPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 3.9A Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 120 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10P22HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3.1A TO277AQualification: AEC-Q101 Grade: Automotive Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3.1A Capacitance @ Vr, F: 500pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 150 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10P22HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3.1A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3.1A Capacitance @ Vr, F: 500pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3750 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10P22-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3.1A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3.1A Capacitance @ Vr, F: 500pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10P22-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 200V 3.1A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 150 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 3.1A Capacitance @ Vr, F: 500pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 2725 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10PM63HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.5A TO277ACurrent - Average Rectified (Io): 4.5A Capacitance @ Vr, F: 2190pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10PM63HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.5A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 4.5A Capacitance @ Vr, F: 2190pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10PM63-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.5A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 4.5A Capacitance @ Vr, F: 2060pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10PM63-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 4.5A TO277AQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 25 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-277A (SMPC) Current - Average Rectified (Io): 4.5A Capacitance @ Vr, F: 2060pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) |
на замовлення 3089 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10PWM10-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A SLIMDPAKCurrent - Reverse Leakage @ Vr: 120 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 1200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 4500 шт В кошику од. на суму грн. | ||||||||||||||
|
V10PWM10-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 10A SLIMDPAKCurrent - Reverse Leakage @ Vr: 120 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: SlimDPAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 1200pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 1389 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| V10D170C-M3/I | Vishay General Semiconductor - Diodes Division | Description: 10A,170V,SMPD, TRENCH SKY RECT. |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||||
| V10D170C-M3/I | Vishay General Semiconductor - Diodes Division | Description: 10A,170V,SMPD, TRENCH SKY RECT. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
V10K150C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 3A FLATPAKQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io) (per Diode): 3A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V10K150C-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOTT 150V 3A FLATPAKDiode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 200 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Grade: Automotive Operating Temperature - Junction: -40°C ~ 150°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io) (per Diode): 3A |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAT43-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA DO204AHPackaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10509 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAT43-TAP | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 200MA DO204AHPackaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA Current - Reverse Leakage @ Vr: 500 nA @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
|
VS-20L15T-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 20A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A Current - Reverse Leakage @ Vr: 10 mA @ 15 V |
на замовлення 4229 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
VS-19TQ015STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 19A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Current - Average Rectified (Io): 19A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
VS-19TQ015STRR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 15V 19A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Current - Average Rectified (Io): 19A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V |
на замовлення 7425 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LL4150-M-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 600MA SOD80Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
LL4150-M-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 50V 600MA SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 600mA Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max) Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: AEC-Q101 |
на замовлення 12165 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SMCJ43A-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 43VWM 69.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.6A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. | ||||||||||||||
|
SMCJ43A-E3/9AT | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 43VWM 69.4VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 21.6A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
на замовлення 2257 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SMCJ43CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 43VWM 69.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 21.6A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||||||||||||||
|
SMCJ43CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 43VWM 69.4VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 21.6A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1253 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V20KM100HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 4.2A FLATPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 250 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 165°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io): 4.2A Capacitance @ Vr, F: 1900pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
|
V20KM100HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 4.2A FLATPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 250 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 165°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io): 4.2A Capacitance @ Vr, F: 1900pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 1490 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V20KM100-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 4.2A FLATPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 250 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 165°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io): 4.2A Capacitance @ Vr, F: 1900pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V20KM100-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 4.2A FLATPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 250 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 165°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io): 4.2A Capacitance @ Vr, F: 1900pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4507 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
V30KM100HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 4.4A FLATPAKQualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 300 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 165°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io): 4.4A Capacitance @ Vr, F: 2450pF @ 4V, 1MHz Technology: Schottky |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
|
V30KM100HM3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 4.4A FLATPAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 300 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -40°C ~ 165°C Supplier Device Package: FlatPAK (5x6) Current - Average Rectified (Io): 4.4A Capacitance @ Vr, F: 2450pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 669 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAV20W-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 250MA SOD123Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAV20W-G3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 150V 250MA SOD123Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-123 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 150 V |
на замовлення 14158 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
VS-ETU3006S2LHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO263ABCurrent - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263AB (D2PAK) Current - Average Rectified (Io): 30A Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
|
SMBJ13CA-E3/5B | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13VWM 21.5VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 6400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SMBJ13CA-E3/5B | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 13VWM 21.5VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
на замовлення 9421 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
P600B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 6A P600Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: P600 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 150pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: P600, Axial Packaging: Cut Tape (CT) |
на замовлення 449 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
P600B-E3/73 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 6A P600Current - Reverse Leakage @ Vr: 5 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: -50°C ~ 150°C Supplier Device Package: P600 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 150pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: P600, Axial Packaging: Tape & Box (TB) |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
P4SMA480AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 408VWM 658VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P4SMA480AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 408VWM 658VC DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P4SMA480AHM3_B/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 408VWM 658VC DO214AC |
товару немає в наявності |
Мінімальне замовлення: 5400 шт В кошику од. на суму грн. | ||||||||||||||
|
P4SMA480AHM3_B/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 408VWM 658VC DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
|
SS1H9-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A DO214AC |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
|
SS1H9-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A DO214AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SS1H9HE3_B/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A SMA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | |||||||||||||||
| SS1H9HE3_B/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 90V 1A SMA |
товару немає в наявності |
Мінімальне замовлення: 3600 шт В кошику од. на суму грн. | |||||||||||||||
|
BYG22D-M3/TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BYG22D-M3/TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 2A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Avalanche Current - Average Rectified (Io): 2A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
на замовлення 10483 шт: термін постачання 21-31 дні (днів) |
|
| BZX384C18-HG3-08 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 15000 шт
В кошику
од. на суму грн.
| BZX384C18-HG3-18 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
Description: DIODE ZENER 18V 200MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| V10K100C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 18.24 грн |
| V10K100C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTTKY 100V FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3.9A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 2351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 69.91 грн |
| 10+ | 44.33 грн |
| 100+ | 31.46 грн |
| 500+ | 22.92 грн |
| V10PWM12HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| V10PWM12HM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description: DIODE SCHOTTKY 120V 10A SLIMDPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 400 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1130pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
на замовлення 4490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 64.42 грн |
| 10+ | 42.97 грн |
| 100+ | 33.94 грн |
| 500+ | 24.78 грн |
| 1000+ | 21.91 грн |
| 2000+ | 20.64 грн |
| V10KM60C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 23.77 грн |
| V10KM60C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE ARR SCHOT 60V 4.8A FLATPAK
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 4.8A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.41 грн |
| 10+ | 52.35 грн |
| 100+ | 34.37 грн |
| 500+ | 25.01 грн |
| V10DM153CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Tape & Reel (TR)
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 38.54 грн |
| V10DM153CHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Part Status: Active
Description: DUAL 150V, 10A TMBS (TRENCH MOS
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 81.70 грн |
| 10+ | 70.28 грн |
| 100+ | 54.83 грн |
| 500+ | 42.51 грн |
| 1000+ | 34.83 грн |
| V10KM120C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 28.33 грн |
| V10KM120C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 120V FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3.9A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 5 A
Current - Reverse Leakage @ Vr: 200 µA @ 120 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 99.77 грн |
| 10+ | 60.97 грн |
| 100+ | 40.39 грн |
| 500+ | 29.63 грн |
| V10P22HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 31.56 грн |
| 3000+ | 28.61 грн |
| V10P22HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 71.49 грн |
| 10+ | 56.58 грн |
| 100+ | 44.01 грн |
| 500+ | 35.01 грн |
| V10P22-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 25.88 грн |
| V10P22-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 200V 3.1A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 3.1A
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 2725 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 92.70 грн |
| 10+ | 55.83 грн |
| 100+ | 36.95 грн |
| 500+ | 27.08 грн |
| V10PM63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 14.73 грн |
| 3000+ | 13.88 грн |
| V10PM63HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 59.70 грн |
| 10+ | 37.52 грн |
| 100+ | 27.80 грн |
| 500+ | 20.14 грн |
| V10PM63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 19.09 грн |
| 3000+ | 16.82 грн |
| V10PM63-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 4.5A TO277A
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 25 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-277A (SMPC)
Current - Average Rectified (Io): 4.5A
Capacitance @ Vr, F: 2060pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
на замовлення 3089 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 70.70 грн |
| 10+ | 42.51 грн |
| 100+ | 27.80 грн |
| 500+ | 20.14 грн |
| V10PWM10-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 4500 шт
В кошику
од. на суму грн.
| V10PWM10-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SCHOTTKY 100V 10A SLIMDPAK
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: SlimDPAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 1200pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 1389 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.99 грн |
| 10+ | 37.60 грн |
| 100+ | 29.56 грн |
| 500+ | 21.47 грн |
| 1000+ | 18.63 грн |
| V10D170C-M3/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 10A,170V,SMPD, TRENCH SKY RECT.
Description: 10A,170V,SMPD, TRENCH SKY RECT.
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| V10D170C-M3/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 10A,170V,SMPD, TRENCH SKY RECT.
Description: 10A,170V,SMPD, TRENCH SKY RECT.
товару немає в наявності
В кошику
од. на суму грн.
| V10K150C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3A FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 150V 3A FLATPAK
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 23.08 грн |
| 3000+ | 19.79 грн |
| V10K150C-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 3A FLATPAK
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3A
Description: DIODE ARR SCHOTT 150V 3A FLATPAK
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io) (per Diode): 3A
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.20 грн |
| 10+ | 45.09 грн |
| 100+ | 31.26 грн |
| 500+ | 24.51 грн |
| BAT43-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.78 грн |
| 16+ | 19.82 грн |
| 100+ | 12.56 грн |
| 500+ | 8.82 грн |
| 1000+ | 7.86 грн |
| 2000+ | 7.05 грн |
| 5000+ | 6.07 грн |
| BAT43-TAP |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 30V 200MA DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10000+ | 6.23 грн |
| 20000+ | 5.52 грн |
| 30000+ | 5.27 грн |
| VS-20L15T-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Description: DIODE SCHOTTKY 15V 20A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
на замовлення 4229 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 99.77 грн |
| 50+ | 77.36 грн |
| 100+ | 61.30 грн |
| 500+ | 48.76 грн |
| 1000+ | 39.72 грн |
| 2000+ | 37.39 грн |
| VS-19TQ015STRR-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 19A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Description: DIODE SCHOTTKY 15V 19A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 39.71 грн |
| VS-19TQ015STRR-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 15V 19A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
Description: DIODE SCHOTTKY 15V 19A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Current - Average Rectified (Io): 19A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 38 A
Current - Reverse Leakage @ Vr: 10.5 mA @ 15 V
на замовлення 7425 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.98 грн |
| 10+ | 78.75 грн |
| 100+ | 55.53 грн |
| LL4150-M-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 600MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 600MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 2.20 грн |
| 5000+ | 1.88 грн |
| 7500+ | 1.74 грн |
| LL4150-M-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 600MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
Description: DIODE STANDARD 50V 600MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
на замовлення 12165 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 34+ | 9.43 грн |
| 50+ | 6.05 грн |
| 100+ | 4.99 грн |
| 500+ | 3.37 грн |
| 1000+ | 2.94 грн |
| SMCJ43A-E3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| SMCJ43A-E3/9AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 2257 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 68.34 грн |
| 10+ | 41.38 грн |
| 100+ | 26.90 грн |
| 500+ | 19.41 грн |
| 1000+ | 17.53 грн |
| SMCJ43CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 850 шт
В кошику
од. на суму грн.
| SMCJ43CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 43VWM 69.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1253 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 107.62 грн |
| 10+ | 65.43 грн |
| 100+ | 43.51 грн |
| V20KM100HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| V20KM100HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 1490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 82.48 грн |
| 10+ | 50.08 грн |
| 100+ | 37.90 грн |
| 500+ | 27.80 грн |
| V20KM100-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 25.77 грн |
| 3000+ | 22.21 грн |
| V20KM100-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 4.2A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 250 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.2A
Capacitance @ Vr, F: 1900pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4507 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 94.27 грн |
| 10+ | 56.81 грн |
| 100+ | 37.90 грн |
| 500+ | 27.80 грн |
| V30KM100HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.4A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.4A
Capacitance @ Vr, F: 2450pF @ 4V, 1MHz
Technology: Schottky
Description: DIODE SCHOTTKY 100V 4.4A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.4A
Capacitance @ Vr, F: 2450pF @ 4V, 1MHz
Technology: Schottky
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| V30KM100HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 4.4A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.4A
Capacitance @ Vr, F: 2450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 100V 4.4A FLATPAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 165°C
Supplier Device Package: FlatPAK (5x6)
Current - Average Rectified (Io): 4.4A
Capacitance @ Vr, F: 2450pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 669 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 86.41 грн |
| 10+ | 53.03 грн |
| 100+ | 42.48 грн |
| 500+ | 31.30 грн |
| BAV20W-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE STANDARD 150V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.37 грн |
| 6000+ | 2.91 грн |
| 9000+ | 2.74 грн |
| BAV20W-G3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 150V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Description: DIODE STANDARD 150V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
на замовлення 14158 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 16+ | 19.64 грн |
| 32+ | 9.76 грн |
| 100+ | 6.04 грн |
| 500+ | 4.16 грн |
| 1000+ | 3.67 грн |
| VS-ETU3006S2LHM3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO263AB
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE STANDARD 600V 30A TO263AB
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SMBJ13CA-E3/5B |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 6400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3200+ | 5.80 грн |
| 6400+ | 5.56 грн |
| SMBJ13CA-E3/5B |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
на замовлення 9421 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 20+ | 15.71 грн |
| 22+ | 13.84 грн |
| 100+ | 11.68 грн |
| 500+ | 8.61 грн |
| P600B-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 100V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
на замовлення 449 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.34 грн |
| 10+ | 68.08 грн |
| 100+ | 50.86 грн |
| P600B-E3/73 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Box (TB)
Description: DIODE GEN PURP 100V 6A P600
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -50°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Box (TB)
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 300+ | 41.86 грн |
| 600+ | 39.92 грн |
| 900+ | 39.28 грн |
| 1500+ | 35.66 грн |
| P4SMA480AHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AC
Description: TVS DIODE 408VWM 658VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA480AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AC
Description: TVS DIODE 408VWM 658VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| P4SMA480AHM3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AC
Description: TVS DIODE 408VWM 658VC DO214AC
товару немає в наявності
Мінімальне замовлення: 5400 шт
В кошику
од. на суму грн.
| P4SMA480AHM3_B/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 408VWM 658VC DO214AC
Description: TVS DIODE 408VWM 658VC DO214AC
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS1H9-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AC
Description: DIODE SCHOTTKY 90V 1A DO214AC
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS1H9-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A DO214AC
Description: DIODE SCHOTTKY 90V 1A DO214AC
товару немає в наявності
В кошику
од. на суму грн.
| SS1H9HE3_B/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A SMA
Description: DIODE SCHOTTKY 90V 1A SMA
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS1H9HE3_B/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 90V 1A SMA
Description: DIODE SCHOTTKY 90V 1A SMA
товару немає в наявності
Мінімальне замовлення: 3600 шт
В кошику
од. на суму грн.
| BYG22D-M3/TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1800+ | 9.58 грн |
| 3600+ | 9.18 грн |
| BYG22D-M3/TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE AVALANCHE 200V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 10483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 40.85 грн |
| 12+ | 25.57 грн |
| 100+ | 20.16 грн |
| 500+ | 14.44 грн |





_Top.jpg)
_Top.jpg)










