Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40748) > Сторінка 533 з 680
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SML4743AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 13V 1W DO214ACTolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: 150°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-214AC (SMA) Grade: Automotive Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V Qualification: AEC-Q101 |
на замовлення 1137 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SB260S-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO204ALPackaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SB260S-E3/54 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 2A DO204ALPackaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 9844 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
MMSZ5256B-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW SOD123Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 49 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
MMSZ5256B-HE3-08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 30V 500MW SOD123Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 30 V Impedance (Max) (Zzt): 49 Ohms Supplier Device Package: SOD-123 Grade: Automotive Part Status: Active Power - Max: 500 mW Current - Reverse Leakage @ Vr: 100 nA @ 23 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RS1B-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RS1B-E3/5AT | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
на замовлення 2854 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
RS1DHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Qualification: AEC-Q101 |
на замовлення 6470 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FJ-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FJ-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 29891 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FK-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FK-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 29151 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 14670 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FM-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FM-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 43497 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLJ-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLJ-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 15530 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLM-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLM-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 56955 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLD-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLD-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 200V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 28979 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 24000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FG-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
на замовлення 26598 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLK-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLK-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 800V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 16817 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FD-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FD-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 29995 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
RS1FLG-M3/I | Vishay General Semiconductor - Diodes Division |
Description: 1A,400V,500NS SMF FAST SWITCHING |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
P6SMB47CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40.2VWM 64.8VC DO214AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
P6SMB47CA-E3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 40.2VWM 64.8VC DO214AA |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
|
SMC3K22CAHM3/57 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 22VWM 35.5VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 84.5A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1771 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC5K22CA-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 22VWM 35.5VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC5K22CA-M3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 22VWM 35.5VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 141A Voltage - Reverse Standoff (Typ): 22V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.4V Voltage - Clamping (Max) @ Ipp: 35.5V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
на замовлення 1615 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC3K22CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: 3KW, 22V 5%,BIDIR,SMC TVS |
на замовлення 1700 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC3K22CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: 3KW, 22V 5%,BIDIR,SMC TVS |
на замовлення 1730 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC3K24CAHM3/57 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 38.9VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2550 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC3K24CAHM3/57 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 24VWM 38.9VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3622 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC3K24CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: 3KW, 24V 5%,BIDIR,SMC TVSPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 850 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMC3K24CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: 3KW, 24V 5%,BIDIR,SMC TVSPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 77.1A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1335 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| 1.5KE39CA-E3/51 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 27.8A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: 1.5KE Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Part Status: Obsolete Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
VS-AZH3106FP-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 600V 30A TO3PFPackaging: Tube Package / Case: SC-94 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 90 ns Technology: Standard Capacitance @ Vr, F: 19pF @ 600V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-3PF Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 245 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
S3MHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
S3MHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 230 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
1.5SMC18AHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.3VWM 25.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 59.5A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
1.5SMC18AHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.3VWM 25.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 59.5A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
1.5SMC18AHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 15.3VWM 25.2VC SMCPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 59.5A Voltage - Reverse Standoff (Typ): 15.3V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 17.1V Voltage - Clamping (Max) @ Ipp: 25.2V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SMCJ33CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 28.1A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SMCJ33CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 28.1A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AB (SMCJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 641 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1800 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33AHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 3435 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5900 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 7200 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8481 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SMAJ33CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SMAJ33CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33VWM 53.3VC DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 7.5A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5824 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AS1FM-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3 µs Technology: Avalanche Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
AU1FM-M3/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1A DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Avalanche Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
|
| SML4743AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Qualification: AEC-Q101
Description: DIODE ZENER 13V 1W DO214AC
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-214AC (SMA)
Grade: Automotive
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Qualification: AEC-Q101
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.74 грн |
| 11+ | 30.23 грн |
| 100+ | 20.67 грн |
| 500+ | 15.22 грн |
| SB260S-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| SB260S-E3/54 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 2A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 2 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 9844 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.58 грн |
| 25+ | 13.30 грн |
| 100+ | 11.46 грн |
| 500+ | 8.45 грн |
| MMSZ5256B-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5256B-HE3-08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
Description: DIODE ZENER 30V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 49 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 100 nA @ 23 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RS1B-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| RS1B-E3/5AT |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 2854 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 24.87 грн |
| 23+ | 14.95 грн |
| 100+ | 10.69 грн |
| 500+ | 7.46 грн |
| 1000+ | 5.01 грн |
| 2000+ | 4.53 грн |
| RS1DHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| RS1DHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 6470 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.44 грн |
| 19+ | 17.76 грн |
| 100+ | 12.01 грн |
| 500+ | 9.56 грн |
| 1000+ | 8.17 грн |
| 2000+ | 7.48 грн |
| RS1FJ-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.11 грн |
| 6000+ | 4.56 грн |
| 9000+ | 3.78 грн |
| RS1FJ-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 29891 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.88 грн |
| 17+ | 20.07 грн |
| 100+ | 9.79 грн |
| 500+ | 7.67 грн |
| 1000+ | 5.33 грн |
| RS1FK-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.14 грн |
| 6000+ | 2.85 грн |
| 9000+ | 2.78 грн |
| 15000+ | 2.60 грн |
| 21000+ | 2.52 грн |
| RS1FK-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 29151 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.58 грн |
| 34+ | 9.75 грн |
| 100+ | 7.94 грн |
| 500+ | 5.50 грн |
| 1000+ | 4.86 грн |
| RS1FLG-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.41 грн |
| 6000+ | 3.14 грн |
| 9000+ | 2.98 грн |
| RS1FLG-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 14670 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.44 грн |
| 19+ | 18.17 грн |
| 100+ | 9.17 грн |
| 500+ | 7.01 грн |
| 1000+ | 5.20 грн |
| RS1FM-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.21 грн |
| 6000+ | 3.68 грн |
| 9000+ | 3.49 грн |
| 15000+ | 3.08 грн |
| 21000+ | 2.96 грн |
| 30000+ | 2.84 грн |
| RS1FM-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 43497 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 15.44 грн |
| 32+ | 10.32 грн |
| 100+ | 6.95 грн |
| 500+ | 4.99 грн |
| 1000+ | 4.48 грн |
| RS1FLJ-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 4.86 грн |
| 6000+ | 4.48 грн |
| 9000+ | 3.87 грн |
| RS1FLJ-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 15530 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.44 грн |
| 19+ | 18.25 грн |
| 100+ | 9.20 грн |
| 500+ | 7.04 грн |
| 1000+ | 5.23 грн |
| RS1FLM-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.84 грн |
| 6000+ | 3.50 грн |
| 9000+ | 3.45 грн |
| 15000+ | 3.22 грн |
| 21000+ | 3.14 грн |
| 30000+ | 3.02 грн |
| RS1FLM-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE STANDARD 1000V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 56955 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 20.58 грн |
| 26+ | 12.88 грн |
| 100+ | 8.14 грн |
| 500+ | 6.26 грн |
| 1000+ | 5.54 грн |
| RS1FLD-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.14 грн |
| 6000+ | 2.85 грн |
| 9000+ | 2.81 грн |
| 15000+ | 2.63 грн |
| RS1FLD-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 28979 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 16.30 грн |
| 32+ | 10.49 грн |
| 100+ | 8.45 грн |
| 500+ | 5.86 грн |
| 1000+ | 5.19 грн |
| RS1FG-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.58 грн |
| 6000+ | 3.19 грн |
| 9000+ | 2.74 грн |
| RS1FG-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE GEN PURP 400V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 26598 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.02 грн |
| 17+ | 19.99 грн |
| 100+ | 9.75 грн |
| 500+ | 7.63 грн |
| 1000+ | 5.31 грн |
| RS1FLK-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 3.59 грн |
| 6000+ | 3.28 грн |
| 9000+ | 3.25 грн |
| 15000+ | 2.99 грн |
| RS1FLK-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: DIODE STANDARD 800V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 16817 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 16.30 грн |
| 32+ | 10.49 грн |
| 100+ | 8.45 грн |
| 500+ | 5.86 грн |
| 1000+ | 5.19 грн |
| RS1FD-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.11 грн |
| 6000+ | 4.56 грн |
| 9000+ | 3.78 грн |
| RS1FD-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 29995 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 30.88 грн |
| 17+ | 20.07 грн |
| 100+ | 9.79 грн |
| 500+ | 7.67 грн |
| 1000+ | 5.33 грн |
| RS1FLG-M3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1A,400V,500NS SMF FAST SWITCHING
Description: 1A,400V,500NS SMF FAST SWITCHING
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB47CA-E3/52 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC DO214AA
Description: TVS DIODE 40.2VWM 64.8VC DO214AA
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB47CA-E3/52 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC DO214AA
Description: TVS DIODE 40.2VWM 64.8VC DO214AA
на замовлення 2 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SMC3K22CAHM3/57 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 84.5A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1771 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 139.80 грн |
| 10+ | 102.74 грн |
| 100+ | 73.47 грн |
| SMC5K22CA-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 850+ | 51.71 грн |
| SMC5K22CA-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 22VWM 35.5VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 141A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
на замовлення 1615 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 96.06 грн |
| 10+ | 75.49 грн |
| 100+ | 58.75 грн |
| SMC3K22CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 3KW, 22V 5%,BIDIR,SMC TVS
Description: 3KW, 22V 5%,BIDIR,SMC TVS
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 850+ | 66.25 грн |
| 1700+ | 52.27 грн |
| SMC3K22CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 3KW, 22V 5%,BIDIR,SMC TVS
Description: 3KW, 22V 5%,BIDIR,SMC TVS
на замовлення 1730 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 114.92 грн |
| 10+ | 99.02 грн |
| 100+ | 77.23 грн |
| SMC3K24CAHM3/57 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 850+ | 59.54 грн |
| SMC3K24CAHM3/57 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3622 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 100.34 грн |
| 10+ | 79.78 грн |
| 100+ | 63.50 грн |
| SMC3K24CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 3KW, 24V 5%,BIDIR,SMC TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 3KW, 24V 5%,BIDIR,SMC TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 850 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 850+ | 41.23 грн |
| SMC3K24CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: 3KW, 24V 5%,BIDIR,SMC TVS
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 3KW, 24V 5%,BIDIR,SMC TVS
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 77.1A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1335 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 114.07 грн |
| 10+ | 74.25 грн |
| 100+ | 52.10 грн |
| 1.5KE39CA-E3/51 |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
Description: TVS DIODE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-AZH3106FP-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 30A TO3PF
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO3PF
Packaging: Tube
Package / Case: SC-94
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Capacitance @ Vr, F: 19pF @ 600V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 30 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 245 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 193.83 грн |
| 25+ | 73.57 грн |
| 100+ | 73.02 грн |
| S3MHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| S3MHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE STANDARD 1000V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 230 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.46 грн |
| 12+ | 29.73 грн |
| 100+ | 22.81 грн |
| 1.5SMC18AHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.3VWM 25.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC18AHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.3VWM 25.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| 1.5SMC18AHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15.3VWM 25.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 15.3VWM 25.2VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ33CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMCJ33CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28.1A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 641 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 45.46 грн |
| 12+ | 29.98 грн |
| SMAJ33AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 7.42 грн |
| SMAJ33AHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 3435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.31 грн |
| 16+ | 21.72 грн |
| 100+ | 14.86 грн |
| 500+ | 10.87 грн |
| SMAJ33CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 13.40 грн |
| 3600+ | 8.95 грн |
| SMAJ33CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.03 грн |
| 11+ | 32.13 грн |
| 100+ | 20.64 грн |
| 500+ | 14.70 грн |
| SMAJ33CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7200 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1800+ | 7.91 грн |
| SMAJ33CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.02 грн |
| 15+ | 22.63 грн |
| 100+ | 15.62 грн |
| 500+ | 12.96 грн |
| SMAJ33CAHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SMAJ33CAHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5824 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 36.02 грн |
| 15+ | 23.04 грн |
| 100+ | 15.62 грн |
| 500+ | 11.44 грн |
| 1000+ | 8.87 грн |
| 2000+ | 8.83 грн |
| AS1FM-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE AVALANCHE 1KV 1.5A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3 µs
Technology: Avalanche
Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 7.31 грн |
| 6000+ | 6.45 грн |
| 9000+ | 6.15 грн |
| 15000+ | 5.45 грн |
| AU1FM-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1KV 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 8.2pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 6.22 грн |
| 6000+ | 5.47 грн |
| 9000+ | 5.21 грн |
| 15000+ | 4.61 грн |
| 21000+ | 4.44 грн |
| 30000+ | 4.28 грн |





_Top.jpg)





