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SMAJ36AHE3_A/I SMAJ36AHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5487 шт:
термін постачання 21-31 дні (днів)
8+42.08 грн
13+25.23 грн
100+16.12 грн
500+11.41 грн
1000+10.21 грн
2000+9.20 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMAJ36CAHE3_A/I SMAJ36CAHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
8+44.46 грн
12+26.45 грн
100+16.92 грн
500+12.00 грн
1000+10.75 грн
2000+9.69 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
1N6285AHE3_B/C 1N6285AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,39V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3_A/D 1N6285AHE3_A/D Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3_A/C 1N6285AHE3_A/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3/51 1N6285AHE3/51 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
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1N5222B-TAP 1N5222B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 19930 шт:
термін постачання 21-31 дні (днів)
37+8.73 грн
58+5.27 грн
120+2.55 грн
500+2.21 грн
1000+2.02 грн
2000+1.96 грн
5000+1.90 грн
Мінімальне замовлення: 37
В кошику  од. на суму  грн.
1N5222B-TAP 1N5222B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 2.5V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.65 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
VS-1N1184 VS-1N1184 Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE GEN PURP 100V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
Current - Reverse Leakage @ Vr: 10 mA @ 100 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
1+785.95 грн
10+545.69 грн
В кошику  од. на суму  грн.
VS-1N1184A VS-1N1184A Vishay General Semiconductor - Diodes Division vs-1n1183series.pdf Description: DIODE STANDARD 100V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 100 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
1+840.73 грн
10+576.73 грн
100+476.90 грн
В кошику  од. на суму  грн.
BZX584C5V6-G3-08 BZX584C5V6-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
8000+2.27 грн
Мінімальне замовлення: 8000
В кошику  од. на суму  грн.
BZX584C5V6-G3-08 BZX584C5V6-G3-08 Vishay General Semiconductor - Diodes Division bzx584c-series.pdf Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 15340 шт:
термін постачання 21-31 дні (днів)
25+12.70 грн
38+8.18 грн
100+3.65 грн
500+3.15 грн
1000+2.60 грн
2000+2.57 грн
Мінімальне замовлення: 25
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P6SMB6.8AHM3_B/H P6SMB6.8AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB6.8AHE3_B/I P6SMB6.8AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB6.8AHM3_B/I P6SMB6.8AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB6.8AHE3_B/H P6SMB6.8AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ36CAHM3_A/I SMCJ36CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ36CAHE3_A/I SMCJ36CAHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C11-HE3_A-08 BZT52C11-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 11V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Qualification: AEC-Q101
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BZT52C11-HE3_A-18 BZT52C11-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 11V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Qualification: AEC-Q101
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MMSZ5267B-HE3_A-18 MMSZ5267B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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MMSZ5267B-HE3_A-08 MMSZ5267B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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MMSZ5267C-HE3_A-18 MMSZ5267C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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MMSZ5267C-HE3_A-08 MMSZ5267C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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VS-8CSH01HM3/86A VS-8CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-8csh01hm3.pdf Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+26.97 грн
3000+24.45 грн
Мінімальне замовлення: 1500
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VS-8CSH01HM3/86A VS-8CSH01HM3/86A Vishay General Semiconductor - Diodes Division vs-8csh01hm3.pdf Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
6+61.92 грн
10+48.32 грн
100+37.62 грн
500+29.92 грн
Мінімальне замовлення: 6
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VS-4ESH01-M3/87A VS-4ESH01-M3/87A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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VS-4ESH01-M3/87A VS-4ESH01-M3/87A Vishay General Semiconductor - Diodes Division vs-4esh01-m3.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
на замовлення 6240 шт:
термін постачання 21-31 дні (днів)
8+42.87 грн
10+34.86 грн
100+24.26 грн
500+17.78 грн
1000+14.45 грн
2000+12.92 грн
Мінімальне замовлення: 8
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VS-6ESH01HM3/87A VS-6ESH01HM3/87A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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VS-6ESH01HM3/87A VS-6ESH01HM3/87A Vishay General Semiconductor - Diodes Division vs-6esh01hm3.pdf Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5425 шт:
термін постачання 21-31 дні (днів)
6+57.16 грн
10+47.47 грн
100+32.84 грн
500+25.75 грн
1000+21.92 грн
2000+19.52 грн
Мінімальне замовлення: 6
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V15PM6-M3/I Vishay General Semiconductor - Diodes Division v15pm6.pdf Description: DIODE SCHOTTKY 60V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
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V15PM6HM3/I Vishay General Semiconductor - Diodes Division v15pm6.pdf Description: DIODE SCHOTTKY 60V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
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BZT52C15-HE3_A-18 BZT52C15-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 15V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
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BZT52C15-HE3_A-08 BZT52C15-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 15V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
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VSSA36S-M3/61T VSSA36S-M3/61T Vishay General Semiconductor - Diodes Division vssa36s-m3.pdf Description: DIODE SCHOTTKY 60V 2.4A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 245pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
на замовлення 8550 шт:
термін постачання 21-31 дні (днів)
13+26.20 грн
19+16.74 грн
100+11.28 грн
500+8.20 грн
Мінімальне замовлення: 13
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P4KE47CAHE3/54 P4KE47CAHE3/54 Vishay General Semiconductor - Diodes Division p4ke.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE47CAHE3/54 P4KE47CAHE3/54 Vishay General Semiconductor - Diodes Division p4ke.pdf Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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MMSZ5232B-HE3_A-18 MMSZ5232B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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MMSZ5232B-HE3_A-08 MMSZ5232B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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EGF1D-E3/5CA EGF1D-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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EGF1D-E3/5CA EGF1D-E3/5CA Vishay General Semiconductor - Diodes Division egf1a.pdf Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5670 шт:
термін постачання 21-31 дні (днів)
6+61.92 грн
10+39.37 грн
100+29.72 грн
500+21.72 грн
1000+18.85 грн
2000+18.19 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BYW72-TAP BYW72-TAP Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2095 шт:
термін постачання 21-31 дні (днів)
4+93.68 грн
10+60.17 грн
100+46.04 грн
500+35.61 грн
1000+32.44 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BYW72-TAP BYW72-TAP Vishay General Semiconductor - Diodes Division byw72.pdf Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+29.64 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RGP30D-E3/73 RGP30D-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
3+112.73 грн
10+72.70 грн
100+54.90 грн
500+40.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RGP30D-E3/73 RGP30D-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RGP30B-E3/73 RGP30B-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
3+107.18 грн
10+69.57 грн
100+54.90 грн
500+40.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
RGP30B-E3/73 RGP30B-E3/73 Vishay General Semiconductor - Diodes Division rgp30a.pdf Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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SM6T24AHE3_B/I SM6T24AHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHE3_B/H SM6T24AHE3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHM3_B/I SM6T24AHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHM3_B/H SM6T24AHM3_B/H Vishay General Semiconductor - Diodes Division sm6t.pdf Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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VS-MURD620CTHM3 VS-MURD620CTHM3 Vishay General Semiconductor - Diodes Division vs-murd620c.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4510 шт:
термін постачання 21-31 дні (днів)
3+153.22 грн
75+68.29 грн
150+59.83 грн
525+53.49 грн
1050+52.20 грн
2025+49.85 грн
Мінімальне замовлення: 3
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VS-MURD620CTTRR-M3 VS-MURD620CTTRR-M3 Vishay General Semiconductor - Diodes Division vs-murd620c.pdf Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 8299 шт:
термін постачання 21-31 дні (днів)
4+91.30 грн
10+55.20 грн
100+36.41 грн
500+26.58 грн
1000+24.14 грн
Мінімальне замовлення: 4
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MURD620CT MURD620CT Vishay General Semiconductor - Diodes Division murd620ct.pdf Description: DIODE ARRAY GP 200V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SML4750-E3/61 SML4750-E3/61 Vishay General Semiconductor - Diodes Division SML4728-SML4764A.pdf Description: DIODE ZENER 27V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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SML4750-E3/61 SML4750-E3/61 Vishay General Semiconductor - Diodes Division SML4728-SML4764A.pdf Description: DIODE ZENER 27V 1W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
9+36.52 грн
12+27.14 грн
100+18.49 грн
Мінімальне замовлення: 9
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MBRF1045HE3_A/P MBRF1045HE3_A/P Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MMSZ5248C-HE3_A-18 MMSZ5248C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
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MMSZ5248C-HE3_A-08 MMSZ5248C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
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VS-10TQ035STRLHM3 VS-10TQ035STRLHM3 Vishay General Semiconductor - Diodes Division vs-10tq035shm3.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
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SMAJ36AHE3_A/I smaj50a.pdf
SMAJ36AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.08 грн
13+25.23 грн
100+16.12 грн
500+11.41 грн
1000+10.21 грн
2000+9.20 грн
Мінімальне замовлення: 8
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SMAJ36CAHE3_A/I smaj50a.pdf
SMAJ36CAHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 6.9A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.46 грн
12+26.45 грн
100+16.92 грн
500+12.00 грн
1000+10.75 грн
2000+9.69 грн
Мінімальне замовлення: 8
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1N6285AHE3_B/C 15ke.pdf
1N6285AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,39V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3_A/D 15ke.pdf
1N6285AHE3_A/D
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3_A/C 15ke.pdf
1N6285AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6285AHE3/51 1.5KE6.8A%20_-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1N6285AHE3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC 1.5KE
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 27.8A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N5222B-TAP 1n5221.pdf
1N5222B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 19930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.73 грн
58+5.27 грн
120+2.55 грн
500+2.21 грн
1000+2.02 грн
2000+1.96 грн
5000+1.90 грн
Мінімальне замовлення: 37
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1N5222B-TAP 1n5221.pdf
1N5222B-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.5V 500MW DO204AH
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.65 грн
Мінімальне замовлення: 10000
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VS-1N1184 vs-1n1183series.pdf
VS-1N1184
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 35A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 110 A
Current - Reverse Leakage @ Vr: 10 mA @ 100 V
на замовлення 86 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+785.95 грн
10+545.69 грн
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VS-1N1184A vs-1n1183series.pdf
VS-1N1184A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 126 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 100 V
на замовлення 254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+840.73 грн
10+576.73 грн
100+476.90 грн
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BZX584C5V6-G3-08 bzx584c-series.pdf
BZX584C5V6-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+2.27 грн
Мінімальне замовлення: 8000
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BZX584C5V6-G3-08 bzx584c-series.pdf
BZX584C5V6-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 200MW SOD523
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
на замовлення 15340 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.70 грн
38+8.18 грн
100+3.65 грн
500+3.15 грн
1000+2.60 грн
2000+2.57 грн
Мінімальне замовлення: 25
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P6SMB6.8AHM3_B/H p6smb.pdf
P6SMB6.8AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB6.8AHE3_B/I p6smb.pdf
P6SMB6.8AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB6.8AHM3_B/I p6smb.pdf
P6SMB6.8AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB6.8AHE3_B/H p6smb.pdf
P6SMB6.8AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 57.1A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.45V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ36CAHM3_A/I smcj.pdf
SMCJ36CAHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ36CAHE3_A/I smcj.pdf
SMCJ36CAHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 58.1VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 25.8A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C11-HE3_A-08 bzt52.pdf
BZT52C11-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Qualification: AEC-Q101
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BZT52C11-HE3_A-18 bzt52.pdf
BZT52C11-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8.5 V
Qualification: AEC-Q101
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MMSZ5267B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5267B-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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MMSZ5267B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267B-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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MMSZ5267C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5267C-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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MMSZ5267C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5267C-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 270 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 56 V
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VS-8CSH01HM3/86A vs-8csh01hm3.pdf
VS-8CSH01HM3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+26.97 грн
3000+24.45 грн
Мінімальне замовлення: 1500
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VS-8CSH01HM3/86A vs-8csh01hm3.pdf
VS-8CSH01HM3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.92 грн
10+48.32 грн
100+37.62 грн
500+29.92 грн
Мінімальне замовлення: 6
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VS-4ESH01-M3/87A vs-4esh01-m3.pdf
VS-4ESH01-M3/87A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
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VS-4ESH01-M3/87A vs-4esh01-m3.pdf
VS-4ESH01-M3/87A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
на замовлення 6240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.87 грн
10+34.86 грн
100+24.26 грн
500+17.78 грн
1000+14.45 грн
2000+12.92 грн
Мінімальне замовлення: 8
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VS-6ESH01HM3/87A vs-6esh01hm3.pdf
VS-6ESH01HM3/87A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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VS-6ESH01HM3/87A vs-6esh01hm3.pdf
VS-6ESH01HM3/87A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 6A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 22 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5425 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.16 грн
10+47.47 грн
100+32.84 грн
500+25.75 грн
1000+21.92 грн
2000+19.52 грн
Мінімальне замовлення: 6
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V15PM6-M3/I v15pm6.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
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V15PM6HM3/I v15pm6.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 15A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2300pF @ 4V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 60 V
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BZT52C15-HE3_A-18 bzt52_series.pdf
BZT52C15-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 410MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
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BZT52C15-HE3_A-08 bzt52.pdf
BZT52C15-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-123
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Grade: Automotive
Qualification: AEC-Q101
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VSSA36S-M3/61T vssa36s-m3.pdf
VSSA36S-M3/61T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.4A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 245pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 3 A
Current - Reverse Leakage @ Vr: 900 µA @ 60 V
на замовлення 8550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.20 грн
19+16.74 грн
100+11.28 грн
500+8.20 грн
Мінімальне замовлення: 13
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P4KE47CAHE3/54 p4ke.pdf
P4KE47CAHE3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE47CAHE3/54 p4ke.pdf
P4KE47CAHE3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 40.2VWM 64.8VC DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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MMSZ5232B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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MMSZ5232B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5232B-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Grade: Automotive
Qualification: AEC-Q101
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EGF1D-E3/5CA egf1a.pdf
EGF1D-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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EGF1D-E3/5CA egf1a.pdf
EGF1D-E3/5CA
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO214BA
Packaging: Cut Tape (CT)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.92 грн
10+39.37 грн
100+29.72 грн
500+21.72 грн
1000+18.85 грн
2000+18.19 грн
Мінімальне замовлення: 6
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BYW72-TAP byw72.pdf
BYW72-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2095 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.68 грн
10+60.17 грн
100+46.04 грн
500+35.61 грн
1000+32.44 грн
Мінімальне замовлення: 4
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BYW72-TAP byw72.pdf
BYW72-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Box (TB)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+29.64 грн
Мінімальне замовлення: 2500
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RGP30D-E3/73 rgp30a.pdf
RGP30D-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.73 грн
10+72.70 грн
100+54.90 грн
500+40.69 грн
Мінімальне замовлення: 3
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RGP30D-E3/73 rgp30a.pdf
RGP30D-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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RGP30B-E3/73 rgp30a.pdf
RGP30B-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+107.18 грн
10+69.57 грн
100+54.90 грн
500+40.69 грн
Мінімальне замовлення: 3
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RGP30B-E3/73 rgp30a.pdf
RGP30B-E3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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SM6T24AHE3_B/I sm6t.pdf
SM6T24AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHE3_B/H sm6t.pdf
SM6T24AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHM3_B/I sm6t.pdf
SM6T24AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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SM6T24AHM3_B/H sm6t.pdf
SM6T24AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,24V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 18A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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VS-MURD620CTHM3 vs-murd620c.pdf
VS-MURD620CTHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 4510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.22 грн
75+68.29 грн
150+59.83 грн
525+53.49 грн
1050+52.20 грн
2025+49.85 грн
Мінімальне замовлення: 3
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VS-MURD620CTTRR-M3 vs-murd620c.pdf
VS-MURD620CTTRR-M3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 8299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.30 грн
10+55.20 грн
100+36.41 грн
500+26.58 грн
1000+24.14 грн
Мінімальне замовлення: 4
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MURD620CT murd620ct.pdf
MURD620CT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 6A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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SML4750-E3/61 SML4728-SML4764A.pdf
SML4750-E3/61
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1W DO214AC
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
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SML4750-E3/61 SML4728-SML4764A.pdf
SML4750-E3/61
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 1W DO214AC
Packaging: Cut Tape (CT)
Tolerance: ±10%
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 20.6 V
на замовлення 308 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+36.52 грн
12+27.14 грн
100+18.49 грн
Мінімальне замовлення: 9
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MBRF1045HE3_A/P mbr10xx.pdf
MBRF1045HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MMSZ5248C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5248C-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
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MMSZ5248C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5248C-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Grade: Automotive
Qualification: AEC-Q101
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VS-10TQ035STRLHM3 vs-10tq035shm3.pdf
VS-10TQ035STRLHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Grade: Automotive
Qualification: AEC-Q101
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