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BZD27B18P-HE3-18 BZD27B18P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
товар відсутній
BZD27B30P-HE3-18 BZD27B30P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Qualification: AEC-Q101
товар відсутній
BZD27B33P-HE3-18 BZD27B33P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
товар відсутній
BZD27B3V6P-HE3-18 BZD27B3V6P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B3V9P-HE3-18 BZD27B3V9P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B4V3P-HE3-18 BZD27B4V3P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B4V7P-HE3-18 BZD27B4V7P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B56P-HE3-18 BZD27B56P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 56V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Qualification: AEC-Q101
товар відсутній
BZD27B5V1P-HE3-18 BZD27B5V1P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B62P-HE3-18 BZD27B62P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 62V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Qualification: AEC-Q101
товар відсутній
BZD27B68P-HE3-18 BZD27B68P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 68V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 51 V
Qualification: AEC-Q101
товар відсутній
BZD27B6V2P-HE3-18 BZD27B6V2P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
товар відсутній
BZD27B6V8P-HE3-18 BZD27B6V8P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
товар відсутній
BZD27B75P-HE3-18 BZD27B75P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 75V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
товар відсутній
BZD27B7V5P-HE3-18 BZD27B7V5P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
товар відсутній
BZD27B82P-HE3-18 BZD27B82P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 82V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Qualification: AEC-Q101
товар відсутній
BZD27B8V2P-HE3-18 BZD27B8V2P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
товар відсутній
BZD27B91P-HE3-18 BZD27B91P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 91V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Qualification: AEC-Q101
товар відсутній
BZD27B9V1P-HE3-18 BZD27B9V1P-HE3-18 Vishay General Semiconductor - Diodes Division bzd27bseries.pdf Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Qualification: AEC-Q101
товар відсутній
S1KHE3_A/I S1KHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+4.63 грн
Мінімальне замовлення: 7500
S1KHE3_A/I S1KHE3_A/I Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 13950 шт:
термін постачання 21-31 дні (днів)
11+26.59 грн
16+ 18.13 грн
100+ 9.15 грн
500+ 7.01 грн
1000+ 5.2 грн
2000+ 4.37 грн
Мінімальне замовлення: 11
S1KHM3_A/H S1KHM3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
1800+6.34 грн
3600+ 5.46 грн
5400+ 5.34 грн
9000+ 4.44 грн
Мінімальне замовлення: 1800
S1KHM3_A/H S1KHM3_A/H Vishay General Semiconductor - Diodes Division s1.pdf Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
12+25.87 грн
16+ 17.51 грн
100+ 8.85 грн
500+ 7.36 грн
Мінімальне замовлення: 12
V8PM10HM3/H V8PM10HM3/H Vishay General Semiconductor - Diodes Division v8pm10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
1500+17.47 грн
3000+ 14.98 грн
7500+ 14.19 грн
Мінімальне замовлення: 1500
V8PM10HM3/H V8PM10HM3/H Vishay General Semiconductor - Diodes Division v8pm10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
на замовлення 9346 шт:
термін постачання 21-31 дні (днів)
8+40.96 грн
10+ 34.18 грн
100+ 23.66 грн
500+ 18.55 грн
Мінімальне замовлення: 8
GSOT36C-G3-18 GSOT36C-G3-18 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
товар відсутній
GSOT36C-G3-18 GSOT36C-G3-18 Vishay General Semiconductor - Diodes Division gsot03c.pdf Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
на замовлення 8930 шт:
термін постачання 21-31 дні (днів)
11+27.3 грн
15+ 18.96 грн
100+ 9.55 грн
500+ 7.94 грн
1000+ 6.18 грн
2000+ 5.53 грн
5000+ 5.32 грн
Мінімальне замовлення: 11
MMSZ5243B-E3-08 MMSZ5243B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+2.92 грн
6000+ 2.61 грн
9000+ 2.17 грн
Мінімальне замовлення: 3000
MMSZ5243B-E3-08 MMSZ5243B-E3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
на замовлення 18800 шт:
термін постачання 21-31 дні (днів)
16+17.96 грн
25+ 11.49 грн
100+ 5.61 грн
500+ 4.39 грн
1000+ 3.05 грн
Мінімальне замовлення: 16
MMSZ5243C-HE3-08 MMSZ5243C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243C-HE3-08 MMSZ5243C-HE3-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
14+21.56 грн
20+ 14.46 грн
100+ 7.06 грн
500+ 5.53 грн
1000+ 3.84 грн
Мінімальне замовлення: 14
MMSZ5243B-HE3_A-08 MMSZ5243B-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243B-HE3_A-18 MMSZ5243B-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243C-HE3_A-08 MMSZ5243C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243C-HE3_A-18 MMSZ5243C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
5KP120AHE3_A/C 5KP120AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5KP12AHE3_A/C 5KP12AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
S4PD-M3/86A S4PD-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1500+11.58 грн
3000+ 9.97 грн
Мінімальне замовлення: 1500
S4PD-M3/86A S4PD-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3952 шт:
термін постачання 21-31 дні (днів)
10+30.9 грн
11+ 25.32 грн
100+ 17.58 грн
500+ 12.88 грн
Мінімальне замовлення: 10
S4PJHM3_A/H S4PJHM3_A/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+13.1 грн
Мінімальне замовлення: 1500
S4PJHM3_A/H S4PJHM3_A/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 2366 шт:
термін постачання 21-31 дні (днів)
9+34.49 грн
10+ 28.58 грн
100+ 19.88 грн
500+ 14.57 грн
Мінімальне замовлення: 9
S4PB-M3/86A S4PB-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
S4PB-M3/86A S4PB-M3/86A Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)
10+30.9 грн
11+ 25.32 грн
100+ 17.58 грн
500+ 12.88 грн
Мінімальне замовлення: 10
S4PBHM3_B/I S4PBHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
S4PGHM3_B/I S4PGHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
S4PGHM3_B/H S4PGHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
S4PKHM3_B/H S4PKHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
S4PDHM3_B/I S4PDHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
S4PJHM3_B/H S4PJHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
S4PJHM3_B/I S4PJHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
S4PMHM3_B/I S4PMHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
S4PKHM3_B/I S4PKHM3_B/I Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
S4PDHM3_B/H S4PDHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
S4PMHM3_B/H S4PMHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
S4PBHM3_B/H S4PBHM3_B/H Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
1N5241B-T 1N5241B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 11V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
товар відсутній
TPSMB39AHE3_A/I TPSMB39AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
3200+12.16 грн
Мінімальне замовлення: 3200
TPSMB39AHE3_A/I TPSMB39AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
8+35.93 грн
10+ 29.68 грн
100+ 20.64 грн
500+ 15.12 грн
1000+ 12.29 грн
Мінімальне замовлення: 8
TPSMB24AHE3_A/I TPSMB24AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 20.5VWM 33.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
3200+12.16 грн
Мінімальне замовлення: 3200
TPSMB24AHE3_A/I TPSMB24AHE3_A/I Vishay General Semiconductor - Diodes Division tpsmb.pdf Description: TVS DIODE 20.5VWM 33.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
8+35.93 грн
10+ 29.68 грн
100+ 20.64 грн
500+ 15.12 грн
1000+ 12.29 грн
Мінімальне замовлення: 8
BZD27B18P-HE3-18 bzd27bseries.pdf
BZD27B18P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
товар відсутній
BZD27B30P-HE3-18 bzd27bseries.pdf
BZD27B30P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 30V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 22 V
Qualification: AEC-Q101
товар відсутній
BZD27B33P-HE3-18 bzd27bseries.pdf
BZD27B33P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 33V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 24 V
Qualification: AEC-Q101
товар відсутній
BZD27B3V6P-HE3-18 bzd27bseries.pdf
BZD27B3V6P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B3V9P-HE3-18 bzd27bseries.pdf
BZD27B3V9P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B4V3P-HE3-18 bzd27bseries.pdf
BZD27B4V3P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B4V7P-HE3-18 bzd27bseries.pdf
BZD27B4V7P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B56P-HE3-18 bzd27bseries.pdf
BZD27B56P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
Qualification: AEC-Q101
товар відсутній
BZD27B5V1P-HE3-18 bzd27bseries.pdf
BZD27B5V1P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
товар відсутній
BZD27B62P-HE3-18 bzd27bseries.pdf
BZD27B62P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 62V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 47 V
Qualification: AEC-Q101
товар відсутній
BZD27B68P-HE3-18 bzd27bseries.pdf
BZD27B68P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 68V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 51 V
Qualification: AEC-Q101
товар відсутній
BZD27B6V2P-HE3-18 bzd27bseries.pdf
BZD27B6V2P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: AEC-Q101
товар відсутній
BZD27B6V8P-HE3-18 bzd27bseries.pdf
BZD27B6V8P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
товар відсутній
BZD27B75P-HE3-18 bzd27bseries.pdf
BZD27B75P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 75V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 56 V
Qualification: AEC-Q101
товар відсутній
BZD27B7V5P-HE3-18 bzd27bseries.pdf
BZD27B7V5P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 3 V
Qualification: AEC-Q101
товар відсутній
BZD27B82P-HE3-18 bzd27bseries.pdf
BZD27B82P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 82V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 62 V
Qualification: AEC-Q101
товар відсутній
BZD27B8V2P-HE3-18 bzd27bseries.pdf
BZD27B8V2P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
Qualification: AEC-Q101
товар відсутній
BZD27B91P-HE3-18 bzd27bseries.pdf
BZD27B91P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 68 V
Qualification: AEC-Q101
товар відсутній
BZD27B9V1P-HE3-18 bzd27bseries.pdf
BZD27B9V1P-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 5 V
Qualification: AEC-Q101
товар відсутній
S1KHE3_A/I s1.pdf
S1KHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7500+4.63 грн
Мінімальне замовлення: 7500
S1KHE3_A/I s1.pdf
S1KHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 13950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+26.59 грн
16+ 18.13 грн
100+ 9.15 грн
500+ 7.01 грн
1000+ 5.2 грн
2000+ 4.37 грн
Мінімальне замовлення: 11
S1KHM3_A/H s1.pdf
S1KHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+6.34 грн
3600+ 5.46 грн
5400+ 5.34 грн
9000+ 4.44 грн
Мінімальне замовлення: 1800
S1KHM3_A/H s1.pdf
S1KHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
12+25.87 грн
16+ 17.51 грн
100+ 8.85 грн
500+ 7.36 грн
Мінімальне замовлення: 12
V8PM10HM3/H v8pm10.pdf
V8PM10HM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+17.47 грн
3000+ 14.98 грн
7500+ 14.19 грн
Мінімальне замовлення: 1500
V8PM10HM3/H v8pm10.pdf
V8PM10HM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
Qualification: AEC-Q101
на замовлення 9346 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+40.96 грн
10+ 34.18 грн
100+ 23.66 грн
500+ 18.55 грн
Мінімальне замовлення: 8
GSOT36C-G3-18 gsot03c.pdf
GSOT36C-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
товар відсутній
GSOT36C-G3-18 gsot03c.pdf
GSOT36C-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 36VWM 71VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 52pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: SOT-23-3
Unidirectional Channels: 2
Voltage - Breakdown (Min): 39V
Voltage - Clamping (Max) @ Ipp: 71V
Power - Peak Pulse: 248W
Power Line Protection: No
на замовлення 8930 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
11+27.3 грн
15+ 18.96 грн
100+ 9.55 грн
500+ 7.94 грн
1000+ 6.18 грн
2000+ 5.53 грн
5000+ 5.32 грн
Мінімальне замовлення: 11
MMSZ5243B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.92 грн
6000+ 2.61 грн
9000+ 2.17 грн
Мінімальне замовлення: 3000
MMSZ5243B-E3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-E3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
на замовлення 18800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
16+17.96 грн
25+ 11.49 грн
100+ 5.61 грн
500+ 4.39 грн
1000+ 3.05 грн
Мінімальне замовлення: 16
MMSZ5243C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243C-HE3-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
на замовлення 2940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
14+21.56 грн
20+ 14.46 грн
100+ 7.06 грн
500+ 5.53 грн
1000+ 3.84 грн
Мінімальне замовлення: 14
MMSZ5243B-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243B-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5243B-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
MMSZ5243C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5243C-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Qualification: AEC-Q101
товар відсутній
5KP120AHE3_A/C 5kp8_5a.pdf
5KP120AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 25.9A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
5KP12AHE3_A/C 5kp8_5a.pdf
5KP12AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 251A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
S4PD-M3/86A s4pm.pdf
S4PD-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+11.58 грн
3000+ 9.97 грн
Мінімальне замовлення: 1500
S4PD-M3/86A s4pm.pdf
S4PD-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 3952 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.9 грн
11+ 25.32 грн
100+ 17.58 грн
500+ 12.88 грн
Мінімальне замовлення: 10
S4PJHM3_A/H s4pm.pdf
S4PJHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1500+13.1 грн
Мінімальне замовлення: 1500
S4PJHM3_A/H s4pm.pdf
S4PJHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 2366 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
9+34.49 грн
10+ 28.58 грн
100+ 19.88 грн
500+ 14.57 грн
Мінімальне замовлення: 9
S4PB-M3/86A s4pm.pdf
S4PB-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товар відсутній
S4PB-M3/86A s4pm.pdf
S4PB-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 2840 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
10+30.9 грн
11+ 25.32 грн
100+ 17.58 грн
500+ 12.88 грн
Мінімальне замовлення: 10
S4PBHM3_B/I s4pm.pdf
S4PBHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
S4PGHM3_B/I s4pm.pdf
S4PGHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
S4PGHM3_B/H s4pm.pdf
S4PGHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товар відсутній
S4PKHM3_B/H s4pm.pdf
S4PKHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
S4PDHM3_B/I s4pm.pdf
S4PDHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
S4PJHM3_B/H s4pm.pdf
S4PJHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
S4PJHM3_B/I s4pm.pdf
S4PJHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товар відсутній
S4PMHM3_B/I s4pm.pdf
S4PMHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
S4PKHM3_B/I s4pm.pdf
S4PKHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
товар відсутній
S4PDHM3_B/H s4pm.pdf
S4PDHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
товар відсутній
S4PMHM3_B/H s4pm.pdf
S4PMHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
товар відсутній
S4PBHM3_B/H s4pm.pdf
S4PBHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товар відсутній
1N5241B-T 1n5221.pdf
1N5241B-T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 11V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 8.4 V
Qualification: AEC-Q101
товар відсутній
TPSMB39AHE3_A/I tpsmb.pdf
TPSMB39AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3200+12.16 грн
Мінімальне замовлення: 3200
TPSMB39AHE3_A/I tpsmb.pdf
TPSMB39AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+35.93 грн
10+ 29.68 грн
100+ 20.64 грн
500+ 15.12 грн
1000+ 12.29 грн
Мінімальне замовлення: 8
TPSMB24AHE3_A/I tpsmb.pdf
TPSMB24AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3200+12.16 грн
Мінімальне замовлення: 3200
TPSMB24AHE3_A/I tpsmb.pdf
TPSMB24AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
8+35.93 грн
10+ 29.68 грн
100+ 20.64 грн
500+ 15.12 грн
1000+ 12.29 грн
Мінімальне замовлення: 8
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