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MBRF1045HE3_A/P MBRF1045HE3_A/P Vishay General Semiconductor - Diodes Division mbr10xx.pdf Description: DIODE SCHOTTKY 45V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MMSZ5248C-HE3_A-18 MMSZ5248C-HE3_A-18 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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MMSZ5248C-HE3_A-08 MMSZ5248C-HE3_A-08 Vishay General Semiconductor - Diodes Division mmsz5225_to_mmsz5267.pdf Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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VS-10TQ035STRLHM3 VS-10TQ035STRLHM3 Vishay General Semiconductor - Diodes Division vs-10tq035shm3.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Qualification: AEC-Q101
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VS-10TQ035STRRHM3 VS-10TQ035STRRHM3 Vishay General Semiconductor - Diodes Division vs-10tq035shm3.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Qualification: AEC-Q101
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SMCJ12CAHM3_A/I SMCJ12CAHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 75.4A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZT52C3V3-HE3_A-18 BZT52C3V3-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.3V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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BZT52C3V3-HE3_A-08 BZT52C3V3-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 3.3V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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BYG23T-M3/TR3 BYG23T-M3/TR3 Vishay General Semiconductor - Diodes Division byg23t.pdf Description: DIODE AVALANCHE 1.3KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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BYG23T-M3/TR3 BYG23T-M3/TR3 Vishay General Semiconductor - Diodes Division byg23t.pdf Description: DIODE AVALANCHE 1.3KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
на замовлення 4392 шт:
термін постачання 21-31 дні (днів)
7+53.54 грн
11+32.02 грн
100+20.52 грн
500+14.59 грн
1000+13.09 грн
2000+11.82 грн
Мінімальне замовлення: 7
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BYG23MHE3_A/I BYG23MHE3_A/I Vishay General Semiconductor - Diodes Division byg23m.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 14900 шт:
термін постачання 21-31 дні (днів)
9+39.73 грн
12+30.02 грн
100+18.00 грн
500+15.65 грн
1000+10.64 грн
2000+9.79 грн
Мінімальне замовлення: 9
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AU1PM-M3/85A AU1PM-M3/85A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+11.83 грн
Мінімальне замовлення: 10000
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AU1PM-M3/85A AU1PM-M3/85A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
8+43.18 грн
10+33.76 грн
100+22.97 грн
500+16.17 грн
1000+12.13 грн
2000+11.12 грн
5000+10.27 грн
Мінімальне замовлення: 8
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AU1PKHM3/85A AU1PKHM3/85A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
9+41.45 грн
10+33.93 грн
100+23.62 грн
500+17.31 грн
1000+14.07 грн
2000+12.58 грн
5000+11.74 грн
Мінімальне замовлення: 9
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AU1PDHM3/84A AU1PDHM3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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AU1PDHM3/84A AU1PDHM3/84A Vishay General Semiconductor - Diodes Division au1pm.pdf Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BZX84C15-HE3_A-18 BZX84C15-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 15V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Qualification: AEC-Q101
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SS24SHE3_B/I SS24SHE3_B/I Vishay General Semiconductor - Diodes Division ss22s.pdf Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 13841 шт:
термін постачання 21-31 дні (днів)
10+37.13 грн
16+21.46 грн
100+13.89 грн
500+9.78 грн
1000+8.48 грн
2000+7.84 грн
Мінімальне замовлення: 10
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BZT52C2V7-HE3_A-18 BZT52C2V7-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 2.7V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52C2V7-HE3_A-08 BZT52C2V7-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52_series.pdf Description: DIODE ZENER 2.7V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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V30K45-M3/I V30K45-M3/I Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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V30K45HM3/I V30K45HM3/I Vishay General Semiconductor - Diodes Division v30k45.pdf Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Qualification: AEC-Q101
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UG10DCT-E3/45 UG10DCT-E3/45 Vishay General Semiconductor - Diodes Division byq28e_ug10xct.pdf Description: DIODE ARRAY GP 200V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
4+97.59 грн
10+84.16 грн
100+65.63 грн
500+50.88 грн
1000+41.68 грн
Мінімальне замовлення: 4
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SMBJ15AHM3_B/H SMBJ15AHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C5V1-HE3_A-18 BZT52C5V1-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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BZT52C5V1-HE3_A-08 BZT52C5V1-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+4.98 грн
6000+4.32 грн
9000+4.08 грн
Мінімальне замовлення: 3000
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BZT52C9V1-G3-18 BZT52C9V1-G3-18 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.10 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZT52C9V1-G3-18 BZT52C9V1-G3-18 Vishay General Semiconductor - Diodes Division bzt52-g.pdf Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
27+12.95 грн
41+8.23 грн
100+3.57 грн
500+3.15 грн
1000+2.88 грн
2000+2.84 грн
5000+2.76 грн
Мінімальне замовлення: 27
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BZT52C9V1-HE3_A-08 BZT52C9V1-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 9.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Qualification: AEC-Q101
товару немає в наявності
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BZT52C9V1-HE3_A-18 BZT52C9V1-HE3_A-18 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 9.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Qualification: AEC-Q101
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BZX84C12-HE3_A-18 BZX84C12-HE3_A-18 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 12V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C12-HE3_A-08 BZX84C12-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 12V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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SMBJ6.5CAHE3_B/H SMBJ6.5CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMBJ6.5CAHE3_B/I SMBJ6.5CAHE3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMBJ6.5CAHM3_B/I SMBJ6.5CAHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMBJ6.5CAHM3_B/H SMBJ6.5CAHM3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BZD27C18P-HE3-08 BZD27C18P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
3000+10.26 грн
6000+9.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C18P-HE3-08 BZD27C18P-HE3-08 Vishay General Semiconductor - Diodes Division bzd27series.pdf Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 28651 шт:
термін постачання 21-31 дні (днів)
11+33.68 грн
13+26.69 грн
100+18.15 грн
500+13.30 грн
1000+11.51 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
V7NM63-M3/I V7NM63-M3/I Vishay General Semiconductor - Diodes Division v7nm63.pdf Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V7NM63-M3/I V7NM63-M3/I Vishay General Semiconductor - Diodes Division v7nm63.pdf Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12536 шт:
термін постачання 21-31 дні (днів)
8+45.77 грн
12+29.86 грн
100+23.58 грн
500+16.91 грн
1000+14.46 грн
2000+13.77 грн
5000+12.27 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7NL63-M3/I V7NL63-M3/I Vishay General Semiconductor - Diodes Division v7nl63.pdf Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V7NL63-M3/I V7NL63-M3/I Vishay General Semiconductor - Diodes Division v7nl63.pdf Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10085 шт:
термін постачання 21-31 дні (днів)
8+45.77 грн
12+29.86 грн
100+23.58 грн
500+16.91 грн
1000+14.46 грн
2000+13.77 грн
5000+12.27 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N103-M3/I V7N103-M3/I Vishay General Semiconductor - Diodes Division v7n103.pdf Description: 7A, 100V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V7N103-M3/I V7N103-M3/I Vishay General Semiconductor - Diodes Division v7n103.pdf Description: 7A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12714 шт:
термін постачання 21-31 дні (днів)
9+42.32 грн
10+34.68 грн
100+24.18 грн
500+17.74 грн
1000+14.66 грн
2000+14.12 грн
5000+12.68 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
V7NM103-M3/I V7NM103-M3/I Vishay General Semiconductor - Diodes Division v7nm103.pdf Description: DIODE SCHOTTK 100V 2.3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 160 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
V7NM103-M3/I V7NM103-M3/I Vishay General Semiconductor - Diodes Division v7nm103.pdf Description: DIODE SCHOTTK 100V 2.3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 160 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11852 шт:
термін постачання 21-31 дні (днів)
8+45.77 грн
11+30.27 грн
100+23.85 грн
500+17.12 грн
1000+14.64 грн
2000+13.99 грн
5000+12.49 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7NM153-M3/I V7NM153-M3/I Vishay General Semiconductor - Diodes Division v7nm153.pdf Description: 7A, 150V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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V7NM153-M3/I V7NM153-M3/I Vishay General Semiconductor - Diodes Division v7nm153.pdf Description: 7A, 150V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13789 шт:
термін постачання 21-31 дні (днів)
8+43.18 грн
10+35.26 грн
100+24.54 грн
500+17.97 грн
1000+16.19 грн
2000+14.69 грн
5000+12.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMA6J12A-E3/61 SMA6J12A-E3/61 Vishay General Semiconductor - Diodes Division sma6jm3.pdf Description: TVS DIODE 12VWM 23.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+6.34 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
SMA6J12A-E3/61 SMA6J12A-E3/61 Vishay General Semiconductor - Diodes Division sma6jm3.pdf Description: TVS DIODE 12VWM 23.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)
12+30.23 грн
18+19.54 грн
100+13.24 грн
500+9.67 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SMA6F17A-M3/6A SMA6F17A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 17VWM 31.4VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111A (8/20µs)
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 31.4V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+10.22 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SMA6F17A-M3/6A SMA6F17A-M3/6A Vishay General Semiconductor - Diodes Division sma6f5.pdf Description: TVS DIODE 17VWM 31.4VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111A (8/20µs)
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 31.4V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
10+34.54 грн
14+24.53 грн
100+16.67 грн
500+12.20 грн
1000+10.99 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
P6SMB300AHM3_D/I P6SMB300AHM3_D/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,300V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.45A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB300AHM3_D/H P6SMB300AHM3_D/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,300V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.45A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ7.5CAHE3_B/H SMBJ7.5CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: 600W,7.5V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ48AHM3_B/I SMBJ48AHM3_B/I Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ48AHE3_B/H SMBJ48AHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N5237B-T 1N5237B-T Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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1.5KE33AHE3_B/C 1.5KE33AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 28.2VWM 45.7VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.5CAHE3_B/H SMBJ8.5CAHE3_B/H Vishay General Semiconductor - Diodes Division smbj.pdf Description: TVS DIODE 8.5VWM 14.4V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBRF1045HE3_A/P mbr10xx.pdf
MBRF1045HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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MMSZ5248C-HE3_A-18 mmsz5225_to_mmsz5267.pdf
MMSZ5248C-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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MMSZ5248C-HE3_A-08 mmsz5225_to_mmsz5267.pdf
MMSZ5248C-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 500MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 21 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Qualification: AEC-Q101
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VS-10TQ035STRLHM3 vs-10tq035shm3.pdf
VS-10TQ035STRLHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Qualification: AEC-Q101
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VS-10TQ035STRRHM3 vs-10tq035shm3.pdf
VS-10TQ035STRRHM3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 10 A
Current - Reverse Leakage @ Vr: 2 mA @ 35 V
Qualification: AEC-Q101
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SMCJ12CAHM3_A/I smcj.pdf
SMCJ12CAHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 19.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 75.4A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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BZT52C3V3-HE3_A-18 bzt52.pdf
BZT52C3V3-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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BZT52C3V3-HE3_A-08 bzt52.pdf
BZT52C3V3-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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BYG23T-M3/TR3 byg23t.pdf
BYG23T-M3/TR3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.3KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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BYG23T-M3/TR3 byg23t.pdf
BYG23T-M3/TR3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1.3KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
на замовлення 4392 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+53.54 грн
11+32.02 грн
100+20.52 грн
500+14.59 грн
1000+13.09 грн
2000+11.82 грн
Мінімальне замовлення: 7
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BYG23MHE3_A/I byg23m.pdf
BYG23MHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 14900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+39.73 грн
12+30.02 грн
100+18.00 грн
500+15.65 грн
1000+10.64 грн
2000+9.79 грн
Мінімальне замовлення: 9
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AU1PM-M3/85A au1pm.pdf
AU1PM-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+11.83 грн
Мінімальне замовлення: 10000
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AU1PM-M3/85A au1pm.pdf
AU1PM-M3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.18 грн
10+33.76 грн
100+22.97 грн
500+16.17 грн
1000+12.13 грн
2000+11.12 грн
5000+10.27 грн
Мінімальне замовлення: 8
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AU1PKHM3/85A au1pm.pdf
AU1PKHM3/85A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.45 грн
10+33.93 грн
100+23.62 грн
500+17.31 грн
1000+14.07 грн
2000+12.58 грн
5000+11.74 грн
Мінімальне замовлення: 9
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AU1PDHM3/84A au1pm.pdf
AU1PDHM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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AU1PDHM3/84A au1pm.pdf
AU1PDHM3/84A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Capacitance @ Vr, F: 11pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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BZX84C15-HE3_A-18 bzx84_series.pdf
BZX84C15-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 300MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Qualification: AEC-Q101
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SS24SHE3_B/I ss22s.pdf
SS24SHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 2A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Qualification: AEC-Q101
на замовлення 13841 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+37.13 грн
16+21.46 грн
100+13.89 грн
500+9.78 грн
1000+8.48 грн
2000+7.84 грн
Мінімальне замовлення: 10
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BZT52C2V7-HE3_A-18 bzt52_series.pdf
BZT52C2V7-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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BZT52C2V7-HE3_A-08 bzt52_series.pdf
BZT52C2V7-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.7V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 83 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Qualification: AEC-Q101
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V30K45-M3/I v30k45.pdf
V30K45-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
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V30K45HM3/I v30k45.pdf
V30K45HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 30A FLATPAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 4000pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Current - Reverse Leakage @ Vr: 2 mA @ 45 V
Qualification: AEC-Q101
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UG10DCT-E3/45 byq28e_ug10xct.pdf
UG10DCT-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.59 грн
10+84.16 грн
100+65.63 грн
500+50.88 грн
1000+41.68 грн
Мінімальне замовлення: 4
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SMBJ15AHM3_B/H smbj.pdf
SMBJ15AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 24.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C5V1-HE3_A-18 bzt52.pdf
BZT52C5V1-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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BZT52C5V1-HE3_A-08 bzt52.pdf
BZT52C5V1-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.98 грн
6000+4.32 грн
9000+4.08 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52C9V1-G3-18 bzt52-g.pdf
BZT52C9V1-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.10 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZT52C9V1-G3-18 bzt52-g.pdf
BZT52C9V1-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 410MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+12.95 грн
41+8.23 грн
100+3.57 грн
500+3.15 грн
1000+2.88 грн
2000+2.84 грн
5000+2.76 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
BZT52C9V1-HE3_A-08 bzt52.pdf
BZT52C9V1-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Qualification: AEC-Q101
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BZT52C9V1-HE3_A-18 bzt52.pdf
BZT52C9V1-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 300MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 7 V
Qualification: AEC-Q101
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BZX84C12-HE3_A-18 bzx84_series.pdf
BZX84C12-HE3_A-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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BZX84C12-HE3_A-08 bzx84_series.pdf
BZX84C12-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 300MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Grade: Automotive
Qualification: AEC-Q101
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SMBJ6.5CAHE3_B/H smbj.pdf
SMBJ6.5CAHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ6.5CAHE3_B/I smbj.pdf
SMBJ6.5CAHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ6.5CAHM3_B/I smbj.pdf
SMBJ6.5CAHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ6.5CAHM3_B/H smbj.pdf
SMBJ6.5CAHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6.5VWM 11.2V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 53.6A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZD27C18P-HE3-08 bzd27series.pdf
BZD27C18P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.26 грн
6000+9.17 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZD27C18P-HE3-08 bzd27series.pdf
BZD27C18P-HE3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-219AB (SMF)
Grade: Automotive
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Qualification: AEC-Q101
на замовлення 28651 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+33.68 грн
13+26.69 грн
100+18.15 грн
500+13.30 грн
1000+11.51 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
V7NM63-M3/I v7nm63.pdf
V7NM63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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V7NM63-M3/I v7nm63.pdf
V7NM63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1060pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 7 A
Current - Reverse Leakage @ Vr: 15 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12536 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.77 грн
12+29.86 грн
100+23.58 грн
500+16.91 грн
1000+14.46 грн
2000+13.77 грн
5000+12.27 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7NL63-M3/I v7nl63.pdf
V7NL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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V7NL63-M3/I v7nl63.pdf
V7NL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2.6A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1150pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.6A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 7 A
Current - Reverse Leakage @ Vr: 110 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10085 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.77 грн
12+29.86 грн
100+23.58 грн
500+16.91 грн
1000+14.46 грн
2000+13.77 грн
5000+12.27 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
V7N103-M3/I v7n103.pdf
V7N103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V7N103-M3/I v7n103.pdf
V7N103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 100V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 860pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 660 mV @ 6 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12714 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+42.32 грн
10+34.68 грн
100+24.18 грн
500+17.74 грн
1000+14.66 грн
2000+14.12 грн
5000+12.68 грн
Мінімальне замовлення: 9
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V7NM103-M3/I v7nm103.pdf
V7NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.3A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 160 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V7NM103-M3/I v7nm103.pdf
V7NM103-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.3A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 770pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 7 A
Current - Reverse Leakage @ Vr: 160 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.77 грн
11+30.27 грн
100+23.85 грн
500+17.12 грн
1000+14.64 грн
2000+13.99 грн
5000+12.49 грн
Мінімальне замовлення: 8
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V7NM153-M3/I v7nm153.pdf
V7NM153-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V, DFN3820A TRENCH SKY RE
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
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V7NM153-M3/I v7nm153.pdf
V7NM153-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 7A, 150V, DFN3820A TRENCH SKY RE
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 390pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 7 A
Current - Reverse Leakage @ Vr: 70 µA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+43.18 грн
10+35.26 грн
100+24.54 грн
500+17.97 грн
1000+16.19 грн
2000+14.69 грн
5000+12.86 грн
Мінімальне замовлення: 8
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SMA6J12A-E3/61 sma6jm3.pdf
SMA6J12A-E3/61
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 23.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+6.34 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
SMA6J12A-E3/61 sma6jm3.pdf
SMA6J12A-E3/61
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12VWM 23.5VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 23.5V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 2580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+30.23 грн
18+19.54 грн
100+13.24 грн
500+9.67 грн
Мінімальне замовлення: 12
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SMA6F17A-M3/6A sma6f5.pdf
SMA6F17A-M3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 31.4VC DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111A (8/20µs)
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 31.4V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+10.22 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SMA6F17A-M3/6A sma6f5.pdf
SMA6F17A-M3/6A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 17VWM 31.4VC DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 111A (8/20µs)
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-221AC (SlimSMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 31.4V
Power - Peak Pulse: 4000W (4kW)
Power Line Protection: No
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.54 грн
14+24.53 грн
100+16.67 грн
500+12.20 грн
1000+10.99 грн
Мінімальне замовлення: 10
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P6SMB300AHM3_D/I p6smb.pdf
P6SMB300AHM3_D/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,300V 5%,UNIDIR,SMB TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.45A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB300AHM3_D/H p6smb.pdf
P6SMB300AHM3_D/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,300V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Automotive, Telecom
Current - Peak Pulse (10/1000µs): 1.45A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ7.5CAHE3_B/H smbj.pdf
SMBJ7.5CAHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,7.5V 5%,BIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 46.5A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ48AHM3_B/I smbj.pdf
SMBJ48AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ48AHE3_B/H smbj.pdf
SMBJ48AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 48VWM 77.4VC DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 7.8A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1N5237B-T 1n5221.pdf
1N5237B-T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 500 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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1.5KE33AHE3_B/C 15ke.pdf
1.5KE33AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 28.2VWM 45.7VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 34A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ8.5CAHE3_B/H smbj.pdf
SMBJ8.5CAHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 8.5VWM 14.4V DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 41.7A
Voltage - Reverse Standoff (Typ): 8.5V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.44V
Voltage - Clamping (Max) @ Ipp: 14.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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