| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BAT54WS-E3-18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Power dissipation: 0.15W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BAT54WS-G3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Leakage current: 2µA Reverse recovery time: 5ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RCA120647K0JNEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 47kΩ Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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1N4148W-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.2V; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOD123 Max. forward voltage: 1.2V Max. forward impulse current: 0.5A Power dissipation: 0.35W Leakage current: 0.1mA |
на замовлення 2629 шт: термін постачання 14-30 дні (днів) |
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| SMBJ5.0A-M3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Technology: TransZorb® Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ5.0A-M3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Technology: TransZorb® Tolerance: ±5% Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ5.0AHE3_A/I | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Manufacturer series: SMBJ Technology: TransZorb® Tolerance: ±5% Features of semiconductor devices: glass passivated Application: automotive industry Kind of package: 13 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RCA060318K7FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 18.7kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
на замовлення 2790 шт: термін постачання 14-30 дні (днів) |
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| SMBJ33AHE3_B/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ30A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAS70-06-HE3-08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel Type of diode: Schottky switching Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Semiconductor structure: common anode; double Max. forward voltage: 1V Leakage current: 0.1µA Reverse recovery time: 5ns Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 3000pcs. Application: automotive industry Features of semiconductor devices: small signal Capacitance: 2pF Max. forward impulse current: 0.2A |
на замовлення 2214 шт: термін постачання 14-30 дні (днів) |
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| SIHH250N60EF-T1GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 600V Drain current: 13A Power dissipation: 89W Case: 8; X Gate-source voltage: 30V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 23nC Kind of channel: enhancement |
на замовлення 3000 шт: термін постачання 14-30 дні (днів) |
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| SIHB20N50E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263 Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 19A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: 30V Mounting: SMD Gate charge: 92nC |
на замовлення 800 шт: термін постачання 14-30 дні (днів) |
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CRCW080549R9FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 49.9Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD Manufacturer series: CRCW0805 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| SMAJ5.0CAHE3_A/I | VISHAY |
Category: Diodes - UnclassifiedDescription: SMAJ5.0CAHE3_A/I |
на замовлення 105000 шт: термін постачання 14-30 дні (днів) |
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TZMC15-GS08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs. Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: MiniMELF; SOD80 Semiconductor structure: single diode Quantity in set/package: 2500pcs. |
на замовлення 18075 шт: термін постачання 14-30 дні (днів) |
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| ES1D-M3/61T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES1D-M3/5AT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| ES1DHE3_A/H | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 15ns; DO214AC,SMA; Ufmax: 920mV Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 15ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 0.92V Max. forward impulse current: 30A Leakage current: 5µA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMCJ24A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 1167 шт: термін постачання 14-30 дні (днів) |
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| SMCJ24A-E3/9AT | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMCJ24AHE3_A/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 38.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SIHP18N50C-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 500V Drain current: 18A Power dissipation: 223W Case: TO220AB Gate-source voltage: 30V Mounting: THT Gate charge: 76nC Kind of channel: enhancement Semiconductor structure: single transistor |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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GBU8M-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BZX55C4V7-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Kind of package: 14 inch reel Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Quantity in set/package: 10000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CRCW120639K0JNTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.25W Tolerance: ±5% Resistance: 39kΩ Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 1100 шт: термін постачання 14-30 дні (днів) |
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| IRLZ34PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 110A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±10V On-state resistance: 70mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BPW20RF | VISHAY |
Category: PhotodiodesDescription: Photodiode; THT; 920nm; 550÷1040nm; 100° Type of photoelement: photodiode Mounting: THT Wavelength of peak sensitivity: 920nm Wavelength: 550...1040nm Viewing angle: 100° Active area: 7.5mm2 Reverse light current at 1klx: 60µA |
на замовлення 540 шт: термін постачання 14-30 дні (днів) |
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SF4007-TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 10 inch reel; Ifsm: 30A; SOD57; 75ns Type of diode: rectifying Semiconductor structure: single diode Mounting: THT Reverse recovery time: 75ns Load current: 1A Max. forward voltage: 1.7V Max. forward impulse current: 30A Max. off-state voltage: 1kV Quantity in set/package: 5000pcs. Kind of package: 10 inch reel Case: SOD57 Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching |
на замовлення 8008 шт: термін постачання 14-30 дні (днів) |
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VS-GBPC3512A | VISHAY |
Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 1.2kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 475A Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
на замовлення 19 шт: термін постачання 14-30 дні (днів) |
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VLMY1500-GS08 | VISHAY |
Category: SMD colour LEDsDescription: LED; yellow; SMD; 0402; 28÷180mcd; 2÷2.4VDC; 1x0.5x0.35mm; 130° Type of diode: LED LED colour: yellow Mounting: SMD Case - inch: 0402 Case - mm: 1005 Luminosity: 28...180mcd Operating voltage: 2...2.4V DC Dimensions: 1x0.5x0.35mm Viewing angle: 130° LED current: 20mA Wavelength: 587...597nm Front: flat |
на замовлення 3336 шт: термін постачання 14-30 дні (днів) |
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| 4N25-X009 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Mounting: SMD Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Manufacturer series: 4N25 Insulation voltage: 5kV Case: SMD6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 4N25-X006 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Manufacturer series: 4N2X Insulation voltage: 5kV Case: DIP6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 4N25-X001 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Manufacturer series: 4N2X Insulation voltage: 5kV Case: DIP6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 4N25-X016 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6 Mounting: THT Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Manufacturer series: 4N2X Insulation voltage: 5kV Case: DIP6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 4N25-X017 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Mounting: SMD Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Manufacturer series: 4N2X Insulation voltage: 5kV Case: SMD6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| 4N25-X017T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6 Mounting: SMD Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Manufacturer series: 4N2X Insulation voltage: 5kV Case: SMD6 Type of optocoupler: optocoupler Kind of output: transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RCA120620R0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; 1206; 20Ω; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 20Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CRCW120620R0FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 20Ω; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 20Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Mounting: SMD Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CRCW120620R0FKEAHP | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 20Ω; 750mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 20Ω Power: 0.75W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Body dimensions: 3.1x1.6x0.5mm Roll diameter max.: 180mm Quantity in set/package: 5000pcs. Conform to the norm: AEC-Q200 Mounting: SMD Operating temperature: -55...155°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DF06S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFS Electrical mounting: SMT Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Kind of package: reel; tape |
на замовлення 1947 шт: термін постачання 14-30 дні (днів) |
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DF06SA-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
на замовлення 1390 шт: термін постачання 14-30 дні (днів) |
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DF06S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 50A Case: DFS Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| DF06SA-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 1A Max. forward impulse current: 30A Case: DFS Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BYV26D-TAP | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1A; Ifsm: 30A; SOD57; 2.5V; 75ns Type of diode: rectifying Mounting: THT Load current: 1A Max. forward impulse current: 30A Case: SOD57 Max. forward voltage: 2.5V Reverse recovery time: 75ns |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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SMBJ30CD-M3/H | VISHAY |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33.8÷36.3V; 12.6A; bidirectional; ±3.5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.8...36.3V Max. forward impulse current: 12.6A Semiconductor structure: bidirectional Tolerance: ±3.5% Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CRCW040210K0JNTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±5%; 50V; -55÷155°C Resistance: 10kΩ Operating temperature: -55...155°C Mounting: SMD Type of resistor: thick film Power: 62.5mW Tolerance: ±5% Case - inch: 0402 Temperature coefficient: 200ppm/°C Operating voltage: 50V Case - mm: 1005 |
на замовлення 100130 шт: термін постачання 14-30 дні (днів) |
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CRCW040210K0JNED | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±5%; 50V; -55÷155°C Resistance: 10kΩ Operating temperature: -55...155°C Mounting: SMD Type of resistor: thick film Power: 63mW Tolerance: ±5% Case - inch: 0402 Temperature coefficient: 200ppm/°C Operating voltage: 50V Case - mm: 1005 |
на замовлення 4720 шт: термін постачання 14-30 дні (днів) |
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H11AA1 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 30V Case: DIP6 CTR@If: 20%@10mA |
на замовлення 1511 шт: термін постачання 14-30 дні (днів) |
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| H11AA1-X007T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 30V Case: SMD6 Conform to the norm: UL Manufacturer series: H11AA CTR@If: 20%@10mA Turn-on time: 4µs Turn-off time: 5µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| H11AA1-X006 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 30V Case: DIP6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| H11AA1-X001 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV Collector-emitter voltage: 30V Case: DIP6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SM6T36A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated |
на замовлення 1778 шт: термін постачання 14-30 дні (днів) |
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GRC00PB4R72WTFL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4.7uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Manufacturer series: GRC Dimensions: 8x11.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GRC00PB4R72WTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 4.7uF; 450VDC; ±20%; 2000h; -40÷105°C Type of capacitor: electrolytic Mounting: THT Capacitance: 4.7µF Operating voltage: 450V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 8x11.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| 1N5062TR | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; SOD57 Type of diode: rectifying Mounting: THT Semiconductor structure: single diode Case: SOD57 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SIHB24N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 70A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 70A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| WSL36376L000FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: metal strip; current shunt,sensing; SMD; 3637; 6mΩ; 3W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 3637 Case - mm: 9491 Resistance: 6mΩ Power: 3W Tolerance: ±1% Operating temperature: -65...170°C Manufacturer series: WSL3637 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SFH615A-2 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 4.2µs Turn-off time: 2.3µs |
на замовлення 2066 шт: термін постачання 14-30 дні (днів) |
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SFH615A-4 | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 160-320%@5mA Collector-emitter voltage: 70V Case: DIP4 Turn-on time: 6µs Turn-off time: 2.5µs |
на замовлення 1607 шт: термін постачання 14-30 дні (днів) |
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| BAT54WS-E3-18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; 150mW
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Power dissipation: 0.15W
товару немає в наявності
В кошику
од. на суму грн.
| BAT54WS-G3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Leakage current: 2µA
Reverse recovery time: 5ns
товару немає в наявності
В кошику
од. на суму грн.
| RCA120647K0JNEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 47kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 47kΩ; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 47kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
товару немає в наявності
В кошику
од. на суму грн.
| 1N4148W-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.2V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Power dissipation: 0.35W
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD123; Ufmax: 1.2V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123
Max. forward voltage: 1.2V
Max. forward impulse current: 0.5A
Power dissipation: 0.35W
Leakage current: 0.1mA
на замовлення 2629 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 6.30 грн |
| 152+ | 2.76 грн |
| 175+ | 2.40 грн |
| 500+ | 2.15 грн |
| 1000+ | 2.04 грн |
| SMBJ5.0A-M3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Technology: TransZorb®
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Technology: TransZorb®
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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В кошику
од. на суму грн.
| SMBJ5.0A-M3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Technology: TransZorb®
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Technology: TransZorb®
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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В кошику
од. на суму грн.
| SMBJ5.0AHE3_A/I |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Technology: TransZorb®
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4÷7.07V; 65.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Manufacturer series: SMBJ
Technology: TransZorb®
Tolerance: ±5%
Features of semiconductor devices: glass passivated
Application: automotive industry
Kind of package: 13 inch reel; tape
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В кошику
од. на суму грн.
| RCA060318K7FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0603; 18.7kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 18.7kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
на замовлення 2790 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.48 грн |
| 400+ | 1.07 грн |
| 440+ | 0.95 грн |
| 570+ | 0.74 грн |
| 1000+ | 0.68 грн |
| SMBJ33AHE3_B/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36.7÷40.6V; 11.3A; unidirectional; ±5%; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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В кошику
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| SMBJ30A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3÷36.8V; 12.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| BAS70-06-HE3-08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; 5ns; 7 inch reel
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Leakage current: 0.1µA
Reverse recovery time: 5ns
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 3000pcs.
Application: automotive industry
Features of semiconductor devices: small signal
Capacitance: 2pF
Max. forward impulse current: 0.2A
на замовлення 2214 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 55+ | 8.54 грн |
| 100+ | 4.70 грн |
| 500+ | 4.15 грн |
| SIHH250N60EF-T1GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: 8; X
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 13A; 89W; 8,X
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 89W
Case: 8; X
Gate-source voltage: 30V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhancement
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 219.46 грн |
| SIHB20N50E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 19A; 179W; D2PAK,TO263
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 19A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: 30V
Mounting: SMD
Gate charge: 92nC
на замовлення 800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 154.70 грн |
| CRCW080549R9FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Manufacturer series: CRCW0805
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 49.9Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 49.9Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Manufacturer series: CRCW0805
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| SMAJ5.0CAHE3_A/I |
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на замовлення 105000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 8.90 грн |
| TZMC15-GS08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; 7 inch reel; MiniMELF,SOD80; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: MiniMELF; SOD80
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
на замовлення 18075 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.99 грн |
| 85+ | 4.93 грн |
| 179+ | 2.34 грн |
| 500+ | 1.84 грн |
| 1000+ | 1.60 грн |
| 2500+ | 1.45 грн |
| 5000+ | 1.44 грн |
| 10000+ | 1.41 грн |
| ES1D-M3/61T |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
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| ES1D-M3/5AT |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
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| ES1DHE3_A/H |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 15ns; DO214AC,SMA; Ufmax: 920mV
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 15ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 0.92V
Max. forward impulse current: 30A
Leakage current: 5µA
Application: automotive industry
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| SMCJ24A-E3/57T |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 1167 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 44.07 грн |
| 16+ | 26.81 грн |
| 100+ | 17.79 грн |
| 500+ | 12.78 грн |
| SMCJ24A-E3/9AT |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| SMCJ24AHE3_A/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 38.6A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 38.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Application: automotive industry
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| SIHP18N50C-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 223W
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Gate charge: 76nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 18A; 223W; TO220AB
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 18A
Power dissipation: 223W
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Gate charge: 76nC
Kind of channel: enhancement
Semiconductor structure: single transistor
на замовлення 500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 131.32 грн |
| GBU8M-M3/45 |
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Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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| BZX55C4V7-TR |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
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| CRCW120639K0JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±5%
Resistance: 39kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 39kΩ; 0.25W; ±5%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±5%
Resistance: 39kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 1100 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.52 грн |
| 600+ | 0.82 грн |
| 1000+ | 0.53 грн |
| IRLZ34PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 110A; 88W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 110A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±10V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
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| BPW20RF |
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Виробник: VISHAY
Category: Photodiodes
Description: Photodiode; THT; 920nm; 550÷1040nm; 100°
Type of photoelement: photodiode
Mounting: THT
Wavelength of peak sensitivity: 920nm
Wavelength: 550...1040nm
Viewing angle: 100°
Active area: 7.5mm2
Reverse light current at 1klx: 60µA
Category: Photodiodes
Description: Photodiode; THT; 920nm; 550÷1040nm; 100°
Type of photoelement: photodiode
Mounting: THT
Wavelength of peak sensitivity: 920nm
Wavelength: 550...1040nm
Viewing angle: 100°
Active area: 7.5mm2
Reverse light current at 1klx: 60µA
на замовлення 540 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 359.77 грн |
| 5+ | 270.60 грн |
| 25+ | 269.76 грн |
| SF4007-TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 10 inch reel; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Quantity in set/package: 5000pcs.
Kind of package: 10 inch reel
Case: SOD57
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 10 inch reel; Ifsm: 30A; SOD57; 75ns
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 75ns
Load current: 1A
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Quantity in set/package: 5000pcs.
Kind of package: 10 inch reel
Case: SOD57
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
на замовлення 8008 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.98 грн |
| 5000+ | 17.20 грн |
| VS-GBPC3512A |
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Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 475A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.2kV; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 475A
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
на замовлення 19 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 395.74 грн |
| 5+ | 347.43 грн |
| 10+ | 334.90 грн |
| VLMY1500-GS08 |
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Виробник: VISHAY
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 28÷180mcd; 2÷2.4VDC; 1x0.5x0.35mm; 130°
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Luminosity: 28...180mcd
Operating voltage: 2...2.4V DC
Dimensions: 1x0.5x0.35mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 587...597nm
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 28÷180mcd; 2÷2.4VDC; 1x0.5x0.35mm; 130°
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Luminosity: 28...180mcd
Operating voltage: 2...2.4V DC
Dimensions: 1x0.5x0.35mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 587...597nm
Front: flat
на замовлення 3336 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.69 грн |
| 53+ | 8.02 грн |
| 100+ | 5.85 грн |
| 500+ | 5.01 грн |
| 1000+ | 4.59 грн |
| 3000+ | 4.43 грн |
| 4N25-X009 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N25
Insulation voltage: 5kV
Case: SMD6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N25
Insulation voltage: 5kV
Case: SMD6
Type of optocoupler: optocoupler
Kind of output: transistor
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| 4N25-X006 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
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| 4N25-X001 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
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| 4N25-X016 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP6
Mounting: THT
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: DIP6
Type of optocoupler: optocoupler
Kind of output: transistor
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| 4N25-X017 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: SMD6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: SMD6
Type of optocoupler: optocoupler
Kind of output: transistor
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| 4N25-X017T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: SMD6
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD6
Mounting: SMD
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Manufacturer series: 4N2X
Insulation voltage: 5kV
Case: SMD6
Type of optocoupler: optocoupler
Kind of output: transistor
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| RCA120620R0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 20Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 1206; 20Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
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| CRCW120620R0FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 20Ω; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 20Ω; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...125°C
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| CRCW120620R0FKEAHP |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 20Ω; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Body dimensions: 3.1x1.6x0.5mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 20Ω; 750mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 20Ω
Power: 0.75W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Body dimensions: 3.1x1.6x0.5mm
Roll diameter max.: 180mm
Quantity in set/package: 5000pcs.
Conform to the norm: AEC-Q200
Mounting: SMD
Operating temperature: -55...155°C
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| DF06S-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Electrical mounting: SMT
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
на замовлення 1947 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.75 грн |
| 14+ | 31.99 грн |
| 100+ | 22.47 грн |
| 500+ | 17.54 грн |
| 1000+ | 16.70 грн |
| DF06SA-E3/77 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
на замовлення 1390 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.86 грн |
| 13+ | 33.24 грн |
| 100+ | 21.55 грн |
| 500+ | 17.04 грн |
| 1000+ | 15.70 грн |
| DF06S-E3/45 | ![]() |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
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| DF06SA-E3/45 |
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Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
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| BYV26D-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1A; Ifsm: 30A; SOD57; 2.5V; 75ns
Type of diode: rectifying
Mounting: THT
Load current: 1A
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 2.5V
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1A; Ifsm: 30A; SOD57; 2.5V; 75ns
Type of diode: rectifying
Mounting: THT
Load current: 1A
Max. forward impulse current: 30A
Case: SOD57
Max. forward voltage: 2.5V
Reverse recovery time: 75ns
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 25.90 грн |
| SMBJ30CD-M3/H |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.8÷36.3V; 12.6A; bidirectional; ±3.5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8...36.3V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±3.5%
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.8÷36.3V; 12.6A; bidirectional; ±3.5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.8...36.3V
Max. forward impulse current: 12.6A
Semiconductor structure: bidirectional
Tolerance: ±3.5%
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
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| CRCW040210K0JNTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±5%; 50V; -55÷155°C
Resistance: 10kΩ
Operating temperature: -55...155°C
Mounting: SMD
Type of resistor: thick film
Power: 62.5mW
Tolerance: ±5%
Case - inch: 0402
Temperature coefficient: 200ppm/°C
Operating voltage: 50V
Case - mm: 1005
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±5%; 50V; -55÷155°C
Resistance: 10kΩ
Operating temperature: -55...155°C
Mounting: SMD
Type of resistor: thick film
Power: 62.5mW
Tolerance: ±5%
Case - inch: 0402
Temperature coefficient: 200ppm/°C
Operating voltage: 50V
Case - mm: 1005
на замовлення 100130 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 0.92 грн |
| 910+ | 0.46 грн |
| 3130+ | 0.13 грн |
| 7700+ | 0.05 грн |
| 10000+ | 0.04 грн |
| CRCW040210K0JNED |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±5%; 50V; -55÷155°C
Resistance: 10kΩ
Operating temperature: -55...155°C
Mounting: SMD
Type of resistor: thick film
Power: 63mW
Tolerance: ±5%
Case - inch: 0402
Temperature coefficient: 200ppm/°C
Operating voltage: 50V
Case - mm: 1005
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 0.063W; ±5%; 50V; -55÷155°C
Resistance: 10kΩ
Operating temperature: -55...155°C
Mounting: SMD
Type of resistor: thick film
Power: 63mW
Tolerance: ±5%
Case - inch: 0402
Temperature coefficient: 200ppm/°C
Operating voltage: 50V
Case - mm: 1005
на замовлення 4720 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 490+ | 0.93 грн |
| 860+ | 0.49 грн |
| 1180+ | 0.35 грн |
| 1350+ | 0.31 грн |
| 2500+ | 0.26 грн |
| H11AA1 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
CTR@If: 20%@10mA
на замовлення 1511 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.95 грн |
| 10+ | 46.44 грн |
| 25+ | 43.26 грн |
| 50+ | 41.01 грн |
| 100+ | 38.92 грн |
| 500+ | 33.82 грн |
| 1000+ | 31.65 грн |
| H11AA1-X007T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL
Manufacturer series: H11AA
CTR@If: 20%@10mA
Turn-on time: 4µs
Turn-off time: 5µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: SMD6
Conform to the norm: UL
Manufacturer series: H11AA
CTR@If: 20%@10mA
Turn-on time: 4µs
Turn-off time: 5µs
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| H11AA1-X006 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
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| H11AA1-X001 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Collector-emitter voltage: 30V
Case: DIP6
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| SM6T36A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
на замовлення 1778 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.49 грн |
| 54+ | 7.85 грн |
| 56+ | 7.52 грн |
| 750+ | 7.02 грн |
| GRC00PB4R72WTFL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Manufacturer series: GRC
Dimensions: 8x11.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Manufacturer series: GRC
Dimensions: 8x11.5mm
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| GRC00PB4R72WTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 8x11.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 4.7uF; 450VDC; ±20%; 2000h; -40÷105°C
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 4.7µF
Operating voltage: 450V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 8x11.5mm
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| 1N5062TR |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; SOD57
Type of diode: rectifying
Mounting: THT
Semiconductor structure: single diode
Case: SOD57
Category: THT universal diodes
Description: Diode: rectifying; THT; SOD57
Type of diode: rectifying
Mounting: THT
Semiconductor structure: single diode
Case: SOD57
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| SIHB24N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 70A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 70A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16A; Idm: 70A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 70A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WSL36376L000FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 3637; 6mΩ; 3W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 3637
Case - mm: 9491
Resistance: 6mΩ
Power: 3W
Tolerance: ±1%
Operating temperature: -65...170°C
Manufacturer series: WSL3637
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 3637; 6mΩ; 3W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 3637
Case - mm: 9491
Resistance: 6mΩ
Power: 3W
Tolerance: ±1%
Operating temperature: -65...170°C
Manufacturer series: WSL3637
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| SFH615A-2 |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 4.2µs
Turn-off time: 2.3µs
на замовлення 2066 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.68 грн |
| 21+ | 20.38 грн |
| 25+ | 18.71 грн |
| 50+ | 17.46 грн |
| 100+ | 16.12 грн |
| 500+ | 13.20 грн |
| 1000+ | 12.44 грн |
| 2000+ | 11.61 грн |
| SFH615A-4 | ![]() |
![]() |
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 2.5µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Turn-on time: 6µs
Turn-off time: 2.5µs
на замовлення 1607 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 51.27 грн |
| 13+ | 34.33 грн |
| 25+ | 25.39 грн |
| 50+ | 19.71 грн |
| 100+ | 16.04 грн |
| 200+ | 14.11 грн |
| 300+ | 13.53 грн |
| 1000+ | 12.53 грн |


















