| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RCA06033M32FKEA | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; 0603; 3.32MΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 3.32MΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
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CRCW06033M32FHEAP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.32MΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 3.32MΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Conform to the norm: AEC-Q200 Roll diameter max.: 180mm Body dimensions: 1.55x0.85x0.45mm Quantity in set/package: 5000pcs. Mounting: SMD |
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CRCW06033M32FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 3.32MΩ; 125mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 3.32MΩ Power: 0.125W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 1.55x0.85x0.45mm Quantity in set/package: 5000pcs. Mounting: SMD |
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| SMAJ20A-E3/61 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| SMAJ20A-E3/5A | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| SMAJ20CA-E3/61 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
| SMAJ20CAHE3_A/H | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Manufacturer series: SMAJ Technology: TransZorb® Application: automotive industry Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
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В кошику од. на суму грн. | |||||||||||||||
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VS-8ETX06FP-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 110A; TO220FP; Ir: 500uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 17pF Kind of package: tube Max. forward impulse current: 110A Case: TO220FP Max. forward voltage: 1.7V Max. load current: 18A Leakage current: 0.5mA Reverse recovery time: 40ns |
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В кошику од. на суму грн. | ||||||||||||||
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CRCW2512845RFKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 845Ω; 1W; ±1%; 500V; -55÷155°C Operating voltage: 500V Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Power: 1W Tolerance: ±1% Temperature coefficient: 100ppm/°C Resistance: 845Ω Case - inch: 2512 Case - mm: 6332 |
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В кошику од. на суму грн. | ||||||||||||||
| SM6T39CA-E3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 39V; 11.1A; bidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||
| SM6T39CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 39V; 11.1A; bidirectional; ±5%; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 13 inch reel; tape Technology: TransZorb® Manufacturer series: SM6T Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||
| SIR440DP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 60A Pulsed drain current: 100A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhancement |
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MBB02070C1004FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 1MΩ; 0.6W; ±1%; 350V; Ø0.6x28mm; 50ppm/°C Resistance: 1MΩ Tolerance: ±1% Operating temperature: -55...155°C Power: 0.6W Mounting: THT Operating voltage: 350V Temperature coefficient: 50ppm/°C Body dimensions: Ø2.5x6.5mm Diameter: 2.5mm Length: 6.5mm Leads: axial Type of resistor: metal film Leads dimensions: Ø0.6x28mm |
на замовлення 504 шт: термін постачання 21-30 дні (днів) |
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SA60A-E3/73 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15 Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: 7 inch reel Features of semiconductor devices: glass passivated Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA60CA-E3/73 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; TransZorb® Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: 7 inch reel Features of semiconductor devices: glass passivated Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA60A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15 Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: 13 inch reel Features of semiconductor devices: glass passivated Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SA60CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; TransZorb® Type of diode: TVS Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 0.5kW Kind of package: 13 inch reel Features of semiconductor devices: glass passivated Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMCJ54A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 77 шт: термін постачання 21-30 дні (днів) |
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| SMCJ54AHE3_A/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60V; 17.2A; unidirectional; DO214AB,SMC; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Number of channels: 1 |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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SMCJ54CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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P16NP223MAB15 | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 22kΩ; 1W; ±20%; linear; soldered Resistance: 22kΩ Tolerance: ±20% Operating temperature: -40...85°C Power: 1W Mounting: soldered Temperature coefficient: 150ppm/°C Panel cutout diameter: 10mm Knob dimensions: Ø16x8mm Electrical rotation angle: 270° Leads: solder lugs Track material: cermet Potentiometer features: for industrial use; with knob IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn |
на замовлення 392 шт: термін постачання 21-30 дні (днів) |
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PE30L0FL223KAB | VISHAY |
Category: Cermet single turn potentiometers Description: Potentiometer: shaft; single turn; 22kΩ; 3W; ±10%; 6mm; linear; 25mm Resistance: 22kΩ Tolerance: ±10% Operating temperature: -55...125°C Power: 3W Mounting: on panel Operating voltage: 300V Temperature coefficient: 150ppm/°C Thread length: 12mm Shaft diameter: 6mm Shaft length: 25mm Electrical rotation angle: 270 ±10° Mechanical rotation angle: 300 ±5° Min. insulation resistance: 1TΩ Leads: for soldering Track material: cermet Shaft surface: smooth Potentiometer features: for industrial use; for military use IP rating: IP67 Characteristics: linear Type of potentiometer: shaft Kind of potentiometer: single turn |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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| IRFP26N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 100A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| SIHH26N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 50A Power dissipation: 202W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 135mΩ Mounting: SMD Gate charge: 116nC Kind of package: reel; tape Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| VOMA617A-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-200%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
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В кошику од. на суму грн. | |||||||||||||||
| VOMA617A-4X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 160-320%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
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В кошику од. на суму грн. | |||||||||||||||
| VOMA617A-8X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 130-260%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
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В кошику од. на суму грн. | |||||||||||||||
| VOMA617A-X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 50-600%@5mA Collector-emitter voltage: 80V Case: SOP4 Conform to the norm: UL; VDE Turn-on time: 2µs Turn-off time: 10.6µs Max. off-state voltage: 5V Manufacturer series: VOMA617A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SQ2364EES-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23; ESD Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 1.3A Gate charge: 2nC On-state resistance: 245mΩ Power dissipation: 1W Gate-source voltage: ±8V Polarisation: unipolar Kind of channel: enhancement Version: ESD |
на замовлення 1692 шт: термін постачання 21-30 дні (днів) |
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| BAT41-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; DO35; 100V; 100mA; 5ns; 200mW Type of diode: Schottky switching Case: DO35 Max. off-state voltage: 100V Load current: 0.1A Max. forward voltage: 1V Max. forward impulse current: 0.75A Power dissipation: 0.2W Leakage current: 0.1µA Reverse recovery time: 5ns |
на замовлення 40000 шт: термін постачання 21-30 дні (днів) |
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| MMSZ5248B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 18V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Quantity in set/package: 3000pcs. |
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В кошику од. на суму грн. | |||||||||||||||
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RCA06120000Z0EALS | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0612; 125mW; 200V; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0612 Case - mm: 1632 Power: 0.125W Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
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В кошику од. на суму грн. | ||||||||||||||
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RS1J-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Capacitance: 7pF Max. forward impulse current: 30A Quantity in set/package: 1800pcs. Case: DO214AC; SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: 7 inch reel |
на замовлення 2005 шт: термін постачання 21-30 дні (днів) |
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RS1J-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V Mounting: SMD Max. forward impulse current: 30A Quantity in set/package: 7500pcs. Case: DO214AC; SMA Features of semiconductor devices: fast switching; glass passivated Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 250ns Leakage current: 50µA Load current: 1A Max. forward voltage: 1.3V Max. off-state voltage: 0.6kV Kind of package: 13 inch reel |
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В кошику од. на суму грн. | ||||||||||||||
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SFH6106-2T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: Gull wing 4 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 2.3µs Turn-on time: 3µs Number of channels: 1 CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Insulation voltage: 5.3kV |
на замовлення 904 шт: термін постачання 21-30 дні (днів) |
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SFH6106-2X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: Gull wing 4 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 2.3µs Turn-on time: 3µs Number of channels: 1 CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Insulation voltage: 5.3kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SFH6106-2 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Conform to the norm: UL Case: SMD4 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 23µs Turn-on time: 4.2µs Number of channels: 1 Max. off-state voltage: 6V CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Insulation voltage: 5.3kV Manufacturer series: SFH6106 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SFH6106-2X001 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Case: SMD4 Type of optocoupler: optocoupler Mounting: SMD Kind of output: transistor Turn-off time: 2.3µs Turn-on time: 3µs Number of channels: 1 Max. off-state voltage: 6V Collector-emitter voltage: 70V Insulation voltage: 5.3kV Manufacturer series: SFH |
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В кошику од. на суму грн. | |||||||||||||||
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VS-40CPQ100-N3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO247AC; Ufmax: 0.61V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247AC Max. forward voltage: 0.61V Max. load current: 40A Max. forward impulse current: 0.3kA Kind of package: tube Quantity in set/package: 25pcs. |
на замовлення 472 шт: термін постачання 21-30 дні (днів) |
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IRFUC20PBF | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
на замовлення 188 шт: термін постачання 21-30 дні (днів) |
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SQ2325ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -1A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -2A Application: automotive industry |
на замовлення 2498 шт: термін постачання 21-30 дні (днів) |
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IRFIBC20GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; 30W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.1A Power dissipation: 30W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
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| IRFDC20PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.32A Power dissipation: 1W Case: HVMDIP Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 2.6A |
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| SIHFBC20L-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.4A Power dissipation: 50W Case: I2PAK; TO262 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A |
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| SIHFRC20-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A |
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| SIHFRC20TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 8A |
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| SIHFUC20-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.3A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 4.4Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A |
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В кошику од. на суму грн. | |||||||||||||||
| SiUD403ED-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.5A; Idm: -0.8A Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Polarisation: unipolar Drain current: -0.5A Drain-source voltage: -20V Pulsed drain current: -0.8A Gate charge: 1.7nC On-state resistance: 4.4Ω Power dissipation: 1.25W Gate-source voltage: ±8V Case: PowerPAK® 0806-3 Technology: TrenchFET® Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||
| MAL210119472E3 | VISHAY |
Category: Screw terminal and others el. capacitors Description: Capacitor: electrolytic; screw type; 4.7mF; 100VDC; Ø35x80mm; ±20% Type of capacitor: electrolytic Mounting: screw type Capacitance: 4.7mF Operating voltage: 100V DC Body dimensions: Ø35x80mm Tolerance: ±20% Service life: 10000h Operating temperature: -40...85°C Height: 80mm Diameter: 35mm |
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В кошику од. на суму грн. | |||||||||||||||
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1.5KE75CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 75.05V; 14.6A; bidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 64.1V Breakdown voltage: 75.05V Max. forward impulse current: 14.6A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 1187 шт: термін постачання 21-30 дні (днів) |
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| ESH3C-E3/57T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying Type of diode: rectifying |
на замовлення 2550 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R99FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 4.99Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Resistance: 4.99Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Case - mm: 2012 Case - inch: 0805 |
на замовлення 4900 шт: термін постачання 21-30 дні (днів) |
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RCA06034R99FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 4.99Ω; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 4.99Ω Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Case - mm: 1608 Conform to the norm: AEC-Q200 Case - inch: 0603 |
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RCA12064R99FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 4.99Ω; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 4.99Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Case - mm: 3216 Conform to the norm: AEC-Q200 Case - inch: 1206 |
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В кошику од. на суму грн. | ||||||||||||||
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RCA06034R99FKEC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 4.99Ω; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Resistance: 4.99Ω Power: 0.1W Tolerance: ±1% Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Case - mm: 1608 Conform to the norm: AEC-Q200 Case - inch: 0603 |
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В кошику од. на суму грн. | ||||||||||||||
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RCA08054R99FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 4.99Ω; 125mW; ±1%; 150V; -55÷155°C Type of resistor: thick film Resistance: 4.99Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Case - mm: 2012 Conform to the norm: AEC-Q200 Case - inch: 0805 |
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MBA02040C4998FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; 0; 200V; Ø0.5x29mm Type of resistor: metal film Mounting: THT Resistance: 4.99Ω Power: 0.4W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Quantity in set/package: 1000pcs. Diameter: 1.6mm Manufacturer series: 0 Leads: axial Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Length: 3.6mm |
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В кошику од. на суму грн. | ||||||||||||||
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MBA02040C4998FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; 0; 200V; Ø0.5x29mm Type of resistor: metal film Mounting: THT Resistance: 4.99Ω Power: 0.4W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Quantity in set/package: 5000pcs. Diameter: 1.6mm Manufacturer series: 0 Leads: axial Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Length: 3.6mm |
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В кошику од. на суму грн. | ||||||||||||||
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MBA0204VC4998FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; V; 200V; Ø0.5x29mm Type of resistor: metal film Mounting: THT Resistance: 4.99Ω Power: 0.4W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Quantity in set/package: 1000pcs. Diameter: 1.6mm Manufacturer series: V Leads: axial Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Length: 3.6mm |
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В кошику од. на суму грн. | ||||||||||||||
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MBA0204VC4998FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; V; 200V; Ø0.5x29mm Type of resistor: metal film Mounting: THT Resistance: 4.99Ω Power: 0.4W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Quantity in set/package: 5000pcs. Diameter: 1.6mm Manufacturer series: V Leads: axial Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm Length: 3.6mm |
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В кошику од. на суму грн. |
| RCA06033M32FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 3.32MΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 3.32MΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 3.32MΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 3.32MΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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| CRCW06033M32FHEAP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.32MΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 3.32MΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Body dimensions: 1.55x0.85x0.45mm
Quantity in set/package: 5000pcs.
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.32MΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 3.32MΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Conform to the norm: AEC-Q200
Roll diameter max.: 180mm
Body dimensions: 1.55x0.85x0.45mm
Quantity in set/package: 5000pcs.
Mounting: SMD
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| CRCW06033M32FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.32MΩ; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 3.32MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 1.55x0.85x0.45mm
Quantity in set/package: 5000pcs.
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 3.32MΩ; 125mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 3.32MΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 1.55x0.85x0.45mm
Quantity in set/package: 5000pcs.
Mounting: SMD
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од. на суму грн.
| SMAJ20A-E3/61 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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| SMAJ20A-E3/5A |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; unidirectional; SMA; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
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| SMAJ20CA-E3/61 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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| SMAJ20CAHE3_A/H |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 22.2÷24.5V; 12.3A; bidirectional; SMA; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
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| VS-8ETX06FP-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 110A; TO220FP; Ir: 500uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 17pF
Kind of package: tube
Max. forward impulse current: 110A
Case: TO220FP
Max. forward voltage: 1.7V
Max. load current: 18A
Leakage current: 0.5mA
Reverse recovery time: 40ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; Ifsm: 110A; TO220FP; Ir: 500uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 17pF
Kind of package: tube
Max. forward impulse current: 110A
Case: TO220FP
Max. forward voltage: 1.7V
Max. load current: 18A
Leakage current: 0.5mA
Reverse recovery time: 40ns
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| CRCW2512845RFKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 845Ω; 1W; ±1%; 500V; -55÷155°C
Operating voltage: 500V
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 1W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 845Ω
Case - inch: 2512
Case - mm: 6332
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 845Ω; 1W; ±1%; 500V; -55÷155°C
Operating voltage: 500V
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 1W
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Resistance: 845Ω
Case - inch: 2512
Case - mm: 6332
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| SM6T39CA-E3/52 |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; bidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; bidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
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| SM6T39CA-E3/5B |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; bidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.1A; bidirectional; ±5%; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Manufacturer series: SM6T
Features of semiconductor devices: glass passivated
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| SIR440DP-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhancement
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| MBB02070C1004FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 1MΩ; 0.6W; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Resistance: 1MΩ
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.6W
Mounting: THT
Operating voltage: 350V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø2.5x6.5mm
Diameter: 2.5mm
Length: 6.5mm
Leads: axial
Type of resistor: metal film
Leads dimensions: Ø0.6x28mm
Category: THT Resistors
Description: Resistor: metal film; THT; 1MΩ; 0.6W; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Resistance: 1MΩ
Tolerance: ±1%
Operating temperature: -55...155°C
Power: 0.6W
Mounting: THT
Operating voltage: 350V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø2.5x6.5mm
Diameter: 2.5mm
Length: 6.5mm
Leads: axial
Type of resistor: metal film
Leads dimensions: Ø0.6x28mm
на замовлення 504 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.06 грн |
| 109+ | 3.81 грн |
| 119+ | 3.49 грн |
| 127+ | 3.27 грн |
| 136+ | 3.05 грн |
| 250+ | 2.75 грн |
| 500+ | 2.52 грн |
| SA60A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
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| SA60CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; TransZorb®
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; TransZorb®
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 7 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
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| SA60A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 500W; 66.7÷73.7V; 5.2A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
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| SA60CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; TransZorb®
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 66.7÷73.7V; 5.2A; bidirectional; DO15; 500W; TransZorb®
Type of diode: TVS
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 0.5kW
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Technology: TransZorb®
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| SMCJ54A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 77 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.01 грн |
| 30+ | 13.95 грн |
| SMCJ54AHE3_A/H |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60V; 17.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60V; 17.2A; unidirectional; DO214AB,SMC; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1700+ | 27.39 грн |
| SMCJ54CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 60÷66.3V; 17.2A; bidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
на замовлення 348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.02 грн |
| 15+ | 27.83 грн |
| 100+ | 17.51 грн |
| P16NP223MAB15 |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 22kΩ; 1W; ±20%; linear; soldered
Resistance: 22kΩ
Tolerance: ±20%
Operating temperature: -40...85°C
Power: 1W
Mounting: soldered
Temperature coefficient: 150ppm/°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 22kΩ; 1W; ±20%; linear; soldered
Resistance: 22kΩ
Tolerance: ±20%
Operating temperature: -40...85°C
Power: 1W
Mounting: soldered
Temperature coefficient: 150ppm/°C
Panel cutout diameter: 10mm
Knob dimensions: Ø16x8mm
Electrical rotation angle: 270°
Leads: solder lugs
Track material: cermet
Potentiometer features: for industrial use; with knob
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
на замовлення 392 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 702.50 грн |
| 5+ | 582.14 грн |
| 10+ | 579.66 грн |
| PE30L0FL223KAB |
|
Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 22kΩ; 3W; ±10%; 6mm; linear; 25mm
Resistance: 22kΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 3W
Mounting: on panel
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
Thread length: 12mm
Shaft diameter: 6mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 22kΩ; 3W; ±10%; 6mm; linear; 25mm
Resistance: 22kΩ
Tolerance: ±10%
Operating temperature: -55...125°C
Power: 3W
Mounting: on panel
Operating voltage: 300V
Temperature coefficient: 150ppm/°C
Thread length: 12mm
Shaft diameter: 6mm
Shaft length: 25mm
Electrical rotation angle: 270 ±10°
Mechanical rotation angle: 300 ±5°
Min. insulation resistance: 1TΩ
Leads: for soldering
Track material: cermet
Shaft surface: smooth
Potentiometer features: for industrial use; for military use
IP rating: IP67
Characteristics: linear
Type of potentiometer: shaft
Kind of potentiometer: single turn
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2638.39 грн |
| 2+ | 2359.93 грн |
| IRFP26N60LPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 100A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
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| SIHH26N60E-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 50A; 202W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 202W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: reel; tape
Kind of channel: enhancement
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| VOMA617A-3X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
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| VOMA617A-4X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 160-320%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
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| VOMA617A-8X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
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| VOMA617A-X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 50-600%@5mA
Collector-emitter voltage: 80V
Case: SOP4
Conform to the norm: UL; VDE
Turn-on time: 2µs
Turn-off time: 10.6µs
Max. off-state voltage: 5V
Manufacturer series: VOMA617A
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| SQ2364EES-T1_GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 1.3A
Gate charge: 2nC
On-state resistance: 245mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.3A; 1W; SOT23; ESD
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 1.3A
Gate charge: 2nC
On-state resistance: 245mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Polarisation: unipolar
Kind of channel: enhancement
Version: ESD
на замовлення 1692 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 54.24 грн |
| 11+ | 40.05 грн |
| 25+ | 32.95 грн |
| 50+ | 27.74 грн |
| 100+ | 23.37 грн |
| BAT41-TR |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO35; 100V; 100mA; 5ns; 200mW
Type of diode: Schottky switching
Case: DO35
Max. off-state voltage: 100V
Load current: 0.1A
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Power dissipation: 0.2W
Leakage current: 0.1µA
Reverse recovery time: 5ns
Category: SMD Schottky diodes
Description: Diode: Schottky switching; DO35; 100V; 100mA; 5ns; 200mW
Type of diode: Schottky switching
Case: DO35
Max. off-state voltage: 100V
Load current: 0.1A
Max. forward voltage: 1V
Max. forward impulse current: 0.75A
Power dissipation: 0.2W
Leakage current: 0.1µA
Reverse recovery time: 5ns
на замовлення 40000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20000+ | 3.55 грн |
| MMSZ5248B-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
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| RCA06120000Z0EALS |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0612; 125mW; 200V; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0612
Case - mm: 1632
Power: 0.125W
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0612; 125mW; 200V; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0612
Case - mm: 1632
Power: 0.125W
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
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| RS1J-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Quantity in set/package: 1800pcs.
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: 7 inch reel
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Capacitance: 7pF
Max. forward impulse current: 30A
Quantity in set/package: 1800pcs.
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: 7 inch reel
на замовлення 2005 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.23 грн |
| 36+ | 11.73 грн |
| 40+ | 10.49 грн |
| 100+ | 6.38 грн |
| 500+ | 4.29 грн |
| 1000+ | 3.72 грн |
| RS1J-E3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Quantity in set/package: 7500pcs.
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: 13 inch reel
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 250ns; DO214AC,SMA; Ufmax: 1.3V
Mounting: SMD
Max. forward impulse current: 30A
Quantity in set/package: 7500pcs.
Case: DO214AC; SMA
Features of semiconductor devices: fast switching; glass passivated
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 250ns
Leakage current: 50µA
Load current: 1A
Max. forward voltage: 1.3V
Max. off-state voltage: 0.6kV
Kind of package: 13 inch reel
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| SFH6106-2T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
Number of channels: 1
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
Number of channels: 1
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
на замовлення 904 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 59.58 грн |
| 11+ | 40.46 грн |
| 50+ | 32.62 грн |
| 100+ | 29.31 грн |
| 500+ | 21.72 грн |
| SFH6106-2X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
Number of channels: 1
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: Gull wing 4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
Number of channels: 1
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
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| SFH6106-2 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Conform to the norm: UL
Case: SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 23µs
Turn-on time: 4.2µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Manufacturer series: SFH6106
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Conform to the norm: UL
Case: SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 23µs
Turn-on time: 4.2µs
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Manufacturer series: SFH6106
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| SFH6106-2X001 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Manufacturer series: SFH
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Case: SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Kind of output: transistor
Turn-off time: 2.3µs
Turn-on time: 3µs
Number of channels: 1
Max. off-state voltage: 6V
Collector-emitter voltage: 70V
Insulation voltage: 5.3kV
Manufacturer series: SFH
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| VS-40CPQ100-N3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO247AC; Ufmax: 0.61V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247AC
Max. forward voltage: 0.61V
Max. load current: 40A
Max. forward impulse current: 0.3kA
Kind of package: tube
Quantity in set/package: 25pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 20Ax2; TO247AC; Ufmax: 0.61V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247AC
Max. forward voltage: 0.61V
Max. load current: 40A
Max. forward impulse current: 0.3kA
Kind of package: tube
Quantity in set/package: 25pcs.
на замовлення 472 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 211.64 грн |
| 10+ | 109.00 грн |
| 25+ | 105.69 грн |
| IRFUC20PBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 188 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 55.13 грн |
| SQ2325ES-T1_GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2A
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1A; Idm: -2A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -2A
Application: automotive industry
на замовлення 2498 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.14 грн |
| 10+ | 42.28 грн |
| 50+ | 30.55 грн |
| 100+ | 26.59 грн |
| 500+ | 20.15 грн |
| 1000+ | 19.24 грн |
| IRFIBC20GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; 30W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Power dissipation: 30W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.1A; 30W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.1A
Power dissipation: 30W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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| IRFDC20PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 2.6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.32A; Idm: 2.6A; 1W; HVMDIP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.32A
Power dissipation: 1W
Case: HVMDIP
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 2.6A
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| SIHFBC20L-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.4A; Idm: 8A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.4A
Power dissipation: 50W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
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| SIHFRC20-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
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| SIHFRC20TR-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
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| SIHFUC20-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.3A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 4.4Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
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| SiUD403ED-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.5A; Idm: -0.8A
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -0.5A
Drain-source voltage: -20V
Pulsed drain current: -0.8A
Gate charge: 1.7nC
On-state resistance: 4.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Case: PowerPAK® 0806-3
Technology: TrenchFET®
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -0.5A; Idm: -0.8A
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -0.5A
Drain-source voltage: -20V
Pulsed drain current: -0.8A
Gate charge: 1.7nC
On-state resistance: 4.4Ω
Power dissipation: 1.25W
Gate-source voltage: ±8V
Case: PowerPAK® 0806-3
Technology: TrenchFET®
Kind of channel: enhancement
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| MAL210119472E3 |
|
Виробник: VISHAY
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 4.7mF; 100VDC; Ø35x80mm; ±20%
Type of capacitor: electrolytic
Mounting: screw type
Capacitance: 4.7mF
Operating voltage: 100V DC
Body dimensions: Ø35x80mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Height: 80mm
Diameter: 35mm
Category: Screw terminal and others el. capacitors
Description: Capacitor: electrolytic; screw type; 4.7mF; 100VDC; Ø35x80mm; ±20%
Type of capacitor: electrolytic
Mounting: screw type
Capacitance: 4.7mF
Operating voltage: 100V DC
Body dimensions: Ø35x80mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -40...85°C
Height: 80mm
Diameter: 35mm
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| 1.5KE75CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.05V; 14.6A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 64.1V
Breakdown voltage: 75.05V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 75.05V; 14.6A; bidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 64.1V
Breakdown voltage: 75.05V
Max. forward impulse current: 14.6A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 1187 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.23 грн |
| 18+ | 24.03 грн |
| 100+ | 19.40 грн |
| 500+ | 18.17 грн |
| ESH3C-E3/57T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 2550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1700+ | 34.32 грн |
| CRCW08054R99FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.99Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 4.99Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.99Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Resistance: 4.99Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Case - mm: 2012
Case - inch: 0805
на замовлення 4900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.63 грн |
| 500+ | 1.32 грн |
| 1000+ | 1.05 грн |
| RCA06034R99FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.99Ω; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 1608
Conform to the norm: AEC-Q200
Case - inch: 0603
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.99Ω; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 1608
Conform to the norm: AEC-Q200
Case - inch: 0603
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од. на суму грн.
| RCA12064R99FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 4.99Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 3216
Conform to the norm: AEC-Q200
Case - inch: 1206
Category: SMD resistors
Description: Resistor: thick film; 1206; 4.99Ω; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 3216
Conform to the norm: AEC-Q200
Case - inch: 1206
товару немає в наявності
В кошику
од. на суму грн.
| RCA06034R99FKEC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.99Ω; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 1608
Conform to the norm: AEC-Q200
Case - inch: 0603
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.99Ω; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 1608
Conform to the norm: AEC-Q200
Case - inch: 0603
товару немає в наявності
В кошику
од. на суму грн.
| RCA08054R99FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 4.99Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 2012
Conform to the norm: AEC-Q200
Case - inch: 0805
Category: SMD resistors
Description: Resistor: thick film; 0805; 4.99Ω; 125mW; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Resistance: 4.99Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Case - mm: 2012
Conform to the norm: AEC-Q200
Case - inch: 0805
товару немає в наявності
В кошику
од. на суму грн.
| MBA02040C4998FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; 0; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 1000pcs.
Diameter: 1.6mm
Manufacturer series: 0
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; 0; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 1000pcs.
Diameter: 1.6mm
Manufacturer series: 0
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
товару немає в наявності
В кошику
од. на суму грн.
| MBA02040C4998FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; 0; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 5000pcs.
Diameter: 1.6mm
Manufacturer series: 0
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; 0; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 5000pcs.
Diameter: 1.6mm
Manufacturer series: 0
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
товару немає в наявності
В кошику
од. на суму грн.
| MBA0204VC4998FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; V; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 1000pcs.
Diameter: 1.6mm
Manufacturer series: V
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; V; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 1000pcs.
Diameter: 1.6mm
Manufacturer series: V
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
товару немає в наявності
В кошику
од. на суму грн.
| MBA0204VC4998FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; V; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 5000pcs.
Diameter: 1.6mm
Manufacturer series: V
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 4.99Ω; 400mW; ±1%; V; 200V; Ø0.5x29mm
Type of resistor: metal film
Mounting: THT
Resistance: 4.99Ω
Power: 0.4W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 5000pcs.
Diameter: 1.6mm
Manufacturer series: V
Leads: axial
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
товару немає в наявності
В кошику
од. на суму грн.