| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SS24HE3_A/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS24HM3_A/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 75A Kind of package: 13 inch reel Quantity in set/package: 3200pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS24S-E3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SS24S-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 3728 шт: термін постачання 14-30 дні (днів) |
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SS24S-M3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SS24S-M3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||
| TZMC10GS08 | VISHAY |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; SMD; MiniMELF,SOD80; 7 inch reel; 2500pcs. Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Case: MiniMELF; SOD80 Kind of package: 7 inch reel Semiconductor structure: single diode Quantity in set/package: 2500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS26S-M3/5AT | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Case: SMA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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SS26S-M3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.7V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS26SHE3_B/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Application: automotive industry Case: SMA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS26SHE3_B/I | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel Mounting: SMD Type of diode: Schottky rectifying Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 2A Max. forward impulse current: 40A Max. off-state voltage: 60V Kind of package: 13 inch reel Quantity in set/package: 7500pcs. Application: automotive industry Case: SMA |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||
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MRS16000C8209FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 82Ω; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C Mounting: THT Operating voltage: 200V Type of resistor: thin film Operating temperature: -55...155°C Leads dimensions: Ø0.5x29mm Diameter: 1.6mm Body dimensions: Ø1.6x3.6mm Length: 3.6mm Power: 0.4W Tolerance: ±1% Temperature coefficient: 50ppm/°C Resistance: 82Ω |
на замовлення 3770 шт: термін постачання 14-30 дні (днів) |
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MRS25000C8209FCT00 | VISHAY |
Category: THT ResistorsDescription: Resistor: thin film; THT; 82Ω; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 82Ω Power: 0.6W Tolerance: ±1% Operating voltage: 350V Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm Temperature coefficient: 50ppm/°C Length: 6.5mm Diameter: 2.5mm |
на замовлення 406 шт: термін постачання 14-30 дні (днів) |
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BFC233915474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±10% Mounting: THT Type of capacitor: polypropylene Kind of capacitor: X2 Capacitance: 0.47µF Terminal pitch: 22.5mm Tolerance: ±10% Operating voltage: 310V AC; 800V DC |
на замовлення 274 шт: термін постачання 14-30 дні (днів) |
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BFC233921474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20% Type of capacitor: polypropylene Capacitance: 0.47µF Operating voltage: 310V AC; 800V DC Tolerance: ±20% Mounting: THT Terminal pitch: 22.5mm Kind of capacitor: X2 |
на замовлення 848 шт: термін постачання 14-30 дні (днів) |
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MCT06030C1002FP500 | VISHAY |
Category: SMD resistorsDescription: Resistor: thin film; SMD; 0603; 10kΩ; 0.125W; ±1%; MCT0603; 0; 75V Type of resistor: thin film Case - inch: 0603 Case - mm: 1608 Resistance: 10kΩ Power: 0.125W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm Manufacturer series: MCT0603 Version: 0 Mounting: SMD Operating temperature: -55...125°C; -55...155°C |
на замовлення 2880 шт: термін постачання 14-30 дні (днів) |
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| SIHG050N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Pulsed drain current: 155A Power dissipation: 278W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIHP050N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 32A Pulsed drain current: 155A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SS36HM3_A/H | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 7 inch reel; 850pcs. Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 100A Kind of package: 7 inch reel Quantity in set/package: 850pcs. Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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MAL213639101E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm Mounting: THT Type of capacitor: electrolytic Operating temperature: -55...105°C Capacitance: 100µF Terminal pitch: 5mm Manufacturer series: MAL2136 Diameter: 12.5mm Body dimensions: Ø12.5x20mm Height: 20mm Tolerance: ±20% Operating voltage: 100V DC Service life: 7000h |
на замовлення 384 шт: термін постачання 14-30 дні (днів) |
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| IRF530STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 56A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF740ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
на замовлення 963 шт: термін постачання 14-30 дні (днів) |
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IRF740ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF740PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
на замовлення 408 шт: термін постачання 14-30 дні (днів) |
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IRF740STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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IRFZ44RPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFZ44SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFZ44STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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IRFZ24PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
на замовлення 461 шт: термін постачання 14-30 дні (днів) |
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| IRFZ40PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| IRFZ48PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IRFZ48RSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
| IRFZ48SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IRFZ48STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 290A Power dissipation: 190W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| BFC238330104 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT Mounting: THT Climate class: 55/110/56 Type of capacitor: polypropylene Capacitance: 0.1µF Leads: 2pin Terminal pitch: 22.5mm Body dimensions: 26x19.5x10mm Tolerance: ±5% Operating voltage: 350V AC; 1kV DC |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | |||||||||||||||
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BFC238330153 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT Type of capacitor: polypropylene Capacitance: 15nF Operating voltage: 350V AC; 1kV DC Tolerance: ±5% Mounting: THT Terminal pitch: 15mm Lead length: 3.5mm Body dimensions: 17.5x11x5mm Leads: 2pin Climate class: 55/110/56 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IRL540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IRL540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
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TS53YJ103MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V Resistance: 10kΩ Power: 0.25W Tolerance: ±20% Operating voltage: 200V Temperature coefficient: 100ppm/°C Mounting: SMD Operating temperature: -55...155°C Body dimensions: 5x5x2.7mm Torque: 1.5Ncm Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Leads: YJ Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Kind of potentiometer: single turn |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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1.5KE82CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 364 шт: термін постачання 14-30 дні (днів) |
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GRC00DD1021CTNL | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Terminal pitch: 5mm Tolerance: ±20% Operating temperature: -40...105°C Dimensions: 10x16mm Service life: 2000h |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||||
| IRFP21N60LPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 84A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRF540STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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IRF540STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
|
GSC00AF2211VARL | VISHAY |
Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Manufacturer series: GSC Nominal life: 2000h Height: 10mm |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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BZX55C3V0-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 13600 шт: термін постачання 14-30 дні (днів) |
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IRF510STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5A Pulsed drain current: 20A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRF830ALPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
на замовлення 934 шт: термін постачання 14-30 дні (днів) |
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| IRF830ASPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IRF830ASTRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| IRF830BPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IRF840ASTRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| IRF840LCLPBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IRF840LCSPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRF840STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.1A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
| IRF9530STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
| IRF9530STRRPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -8.2A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||||
|
IRFB13N50APBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRF640PBF-BE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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IRF640STRRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| SS24HE3_A/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SS24HM3_A/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 75A
Kind of package: 13 inch reel
Quantity in set/package: 3200pcs.
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| SS24S-E3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS24S-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 3728 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 25+ | 17.90 грн |
| 33+ | 12.88 грн |
| 100+ | 10.14 грн |
| 500+ | 9.89 грн |
| SS24S-M3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS24S-M3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| TZMC10GS08 |
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Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; MiniMELF,SOD80; 7 inch reel; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Kind of package: 7 inch reel
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; MiniMELF,SOD80; 7 inch reel; 2500pcs.
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Case: MiniMELF; SOD80
Kind of package: 7 inch reel
Semiconductor structure: single diode
Quantity in set/package: 2500pcs.
товару немає в наявності
В кошику
од. на суму грн.
| SS26S-M3/5AT |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Case: SMA
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| SS26S-M3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS26SHE3_B/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 7 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Application: automotive industry
Case: SMA
товару немає в наявності
В кошику
од. на суму грн.
| SS26SHE3_B/I |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Application: automotive industry
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 2A; 13 inch reel
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 2A
Max. forward impulse current: 40A
Max. off-state voltage: 60V
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Application: automotive industry
Case: SMA
товару немає в наявності
Мінімальне замовлення: 7500 шт
В кошику
од. на суму грн.
| MRS16000C8209FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C
Mounting: THT
Operating voltage: 200V
Type of resistor: thin film
Operating temperature: -55...155°C
Leads dimensions: Ø0.5x29mm
Diameter: 1.6mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Power: 0.4W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Resistance: 82Ω
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 400mW; ±1%; 200V; Ø0.5x29mm; 50ppm/°C
Mounting: THT
Operating voltage: 200V
Type of resistor: thin film
Operating temperature: -55...155°C
Leads dimensions: Ø0.5x29mm
Diameter: 1.6mm
Body dimensions: Ø1.6x3.6mm
Length: 3.6mm
Power: 0.4W
Tolerance: ±1%
Temperature coefficient: 50ppm/°C
Resistance: 82Ω
на замовлення 3770 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 61+ | 7.34 грн |
| 76+ | 5.53 грн |
| 100+ | 5.02 грн |
| 250+ | 4.30 грн |
| 500+ | 3.74 грн |
| 1000+ | 3.27 грн |
| 2500+ | 2.91 грн |
| MRS25000C8209FCT00 |
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Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 82Ω
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
Category: THT Resistors
Description: Resistor: thin film; THT; 82Ω; 600mW; ±1%; 350V; Ø0.6x28mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 82Ω
Power: 0.6W
Tolerance: ±1%
Operating voltage: 350V
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Temperature coefficient: 50ppm/°C
Length: 6.5mm
Diameter: 2.5mm
на замовлення 406 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 28+ | 16.16 грн |
| BFC233915474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±10%
Mounting: THT
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 0.47µF
Terminal pitch: 22.5mm
Tolerance: ±10%
Operating voltage: 310V AC; 800V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±10%
Mounting: THT
Type of capacitor: polypropylene
Kind of capacitor: X2
Capacitance: 0.47µF
Terminal pitch: 22.5mm
Tolerance: ±10%
Operating voltage: 310V AC; 800V DC
на замовлення 274 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 173.61 грн |
| 250+ | 87.25 грн |
| BFC233921474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 22.5mm
Kind of capacitor: X2
Category: THT Film Capacitors
Description: Capacitor: polypropylene; X2; 470nF; 800VDC; 310VAC; THT; ±20%
Type of capacitor: polypropylene
Capacitance: 0.47µF
Operating voltage: 310V AC; 800V DC
Tolerance: ±20%
Mounting: THT
Terminal pitch: 22.5mm
Kind of capacitor: X2
на замовлення 848 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 42.06 грн |
| 18+ | 23.52 грн |
| 50+ | 19.86 грн |
| 100+ | 17.70 грн |
| 200+ | 15.87 грн |
| 400+ | 15.29 грн |
| 600+ | 15.04 грн |
| MCT06030C1002FP500 |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Version: 0
Mounting: SMD
Operating temperature: -55...125°C; -55...155°C
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 10kΩ; 0.125W; ±1%; MCT0603; 0; 75V
Type of resistor: thin film
Case - inch: 0603
Case - mm: 1608
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Manufacturer series: MCT0603
Version: 0
Mounting: SMD
Operating temperature: -55...125°C; -55...155°C
на замовлення 2880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 68+ | 6.63 грн |
| 192+ | 2.17 грн |
| 260+ | 1.60 грн |
| 500+ | 1.32 грн |
| 1000+ | 1.21 грн |
| SIHG050N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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| SIHP050N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; Idm: 155A; 278W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Pulsed drain current: 155A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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| SS36HM3_A/H |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; 7 inch reel; 850pcs.
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 100A
Kind of package: 7 inch reel
Quantity in set/package: 850pcs.
Application: automotive industry
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| MAL213639101E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Mounting: THT
Type of capacitor: electrolytic
Operating temperature: -55...105°C
Capacitance: 100µF
Terminal pitch: 5mm
Manufacturer series: MAL2136
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Tolerance: ±20%
Operating voltage: 100V DC
Service life: 7000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 100VDC; Ø12.5x20mm; Pitch: 5mm
Mounting: THT
Type of capacitor: electrolytic
Operating temperature: -55...105°C
Capacitance: 100µF
Terminal pitch: 5mm
Manufacturer series: MAL2136
Diameter: 12.5mm
Body dimensions: Ø12.5x20mm
Height: 20mm
Tolerance: ±20%
Operating voltage: 100V DC
Service life: 7000h
на замовлення 384 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 176.29 грн |
| 10+ | 110.52 грн |
| 50+ | 92.24 грн |
| 100+ | 83.93 грн |
| 200+ | 76.45 грн |
| IRF530STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 56A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 56A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| IRF740ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 963 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 192.40 грн |
| 10+ | 110.52 грн |
| 50+ | 89.74 грн |
| 100+ | 84.76 грн |
| IRF740ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| IRF740PBF-BE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 408 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 150.34 грн |
| 10+ | 99.72 грн |
| 25+ | 88.91 грн |
| 50+ | 82.27 грн |
| 100+ | 73.96 грн |
| IRF740STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFZ44RPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| IRFZ44SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| IRFZ44STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFZ24PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 461 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 137.81 грн |
| 10+ | 57.09 грн |
| 50+ | 50.61 грн |
| 100+ | 47.86 грн |
| 250+ | 44.29 грн |
| IRFZ40PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRFZ48PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| IRFZ48RSPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRFZ48SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| IRFZ48STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 290A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 290A
Power dissipation: 190W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BFC238330104 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 0.1µF
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 1kVDC; 350VAC; 26x19.5x10mm; THT
Mounting: THT
Climate class: 55/110/56
Type of capacitor: polypropylene
Capacitance: 0.1µF
Leads: 2pin
Terminal pitch: 22.5mm
Body dimensions: 26x19.5x10mm
Tolerance: ±5%
Operating voltage: 350V AC; 1kV DC
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Мінімальне замовлення: 200 шт
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| BFC238330153 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Type of capacitor: polypropylene
Capacitance: 15nF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 15mm
Lead length: 3.5mm
Body dimensions: 17.5x11x5mm
Leads: 2pin
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 15nF; 1kVDC; 350VAC; 17.5x11x5mm; THT
Type of capacitor: polypropylene
Capacitance: 15nF
Operating voltage: 350V AC; 1kV DC
Tolerance: ±5%
Mounting: THT
Terminal pitch: 15mm
Lead length: 3.5mm
Body dimensions: 17.5x11x5mm
Leads: 2pin
Climate class: 55/110/56
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| IRL540SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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| IRL540STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 800 шт
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| TS53YJ103MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 5x5x2.7mm
Torque: 1.5Ncm
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%; 200V
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 5x5x2.7mm
Torque: 1.5Ncm
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Leads: YJ
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Kind of potentiometer: single turn
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 161.08 грн |
| 10+ | 128.80 грн |
| 25+ | 118.83 грн |
| 1.5KE82CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 364 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 17+ | 27.74 грн |
| 19+ | 22.85 грн |
| 100+ | 20.03 грн |
| 250+ | 18.36 грн |
| GRC00DD1021CTNL |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Terminal pitch: 5mm
Tolerance: ±20%
Operating temperature: -40...105°C
Dimensions: 10x16mm
Service life: 2000h
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Мінімальне замовлення: 2 шт
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| IRFP21N60LPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 84A
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| IRF540STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
товару немає в наявності
Мінімальне замовлення: 800 шт
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| IRF540STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| GSC00AF2211VARL |
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Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Manufacturer series: GSC
Nominal life: 2000h
Height: 10mm
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 30+ | 19.42 грн |
| 50+ | 11.55 грн |
| BZX55C3V0-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 13600 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 72+ | 6.26 грн |
| 103+ | 4.07 грн |
| 122+ | 3.41 грн |
| 182+ | 2.29 грн |
| 1000+ | 1.64 грн |
| 5000+ | 1.50 грн |
| 10000+ | 1.46 грн |
| IRF510STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 43W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| IRF830ALPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 934 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 161.08 грн |
| 5+ | 132.12 грн |
| 10+ | 99.72 грн |
| 50+ | 69.80 грн |
| 100+ | 65.65 грн |
| IRF830ASPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
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| IRF830ASTRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF830BPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840ASTRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
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од. на суму грн.
| IRF840LCLPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840LCSPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
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| IRF840STRRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.1A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.1A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF9530STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRF9530STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -8.2A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFB13N50APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF640PBF-BE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 170.03 грн |
| 10+ | 82.27 грн |
| 25+ | 76.45 грн |
| 50+ | 72.29 грн |
| 100+ | 68.97 грн |
| IRF640STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.

























