| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SI3424CDV-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3440ADV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.2A Pulsed drain current: 4A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 432mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3417DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3443CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: SC74; TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3429EDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -40A Power dissipation: 2.7W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38mΩ Mounting: SMD Gate charge: 43.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3473CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -20A Power dissipation: 4.2W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 36mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SI3473DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -8A Pulsed drain current: -30A Power dissipation: 3.6W Case: SC74; TSOP6 Gate-source voltage: ±8V On-state resistance: 38.8mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW12103K30FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 3.3kΩ Mounting: SMD Case - inch: 1210 Case - mm: 3225 Power: 0.5W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.2x2.5x0.55mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW12103K30FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 3.3kΩ Mounting: SMD Case - inch: 1210 Case - mm: 3225 Power: 0.5W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Quantity in set/package: 5000pcs. Body dimensions: 3.2x2.5x0.55mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW08051K91FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V Type of resistor: thick film Resistance: 1.91kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||||||||
| VS-EPH6007L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 520A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2.2V Reverse recovery time: 65ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-A5PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-A5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Application: automotive industry Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Application: automotive industry Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 330A Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.6V Reverse recovery time: 46ns Application: automotive industry Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD Max. forward voltage: 1.7V Reverse recovery time: 29ns |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
 |
MBE04140C6800FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C Length: 11.9mm Tolerance: ±1% Diameter: 4.2mm Type of resistor: metal film Mounting: THT Operating temperature: -55...155°C Resistance: 680Ω Leads: axial Body dimensions: Ø4.2x11.9mm Power: 1W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.8x31mm Operating voltage: 500V |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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IRF9620STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5Ω Pulsed drain current: -14A Power dissipation: 40W Polarisation: unipolar Drain current: -2A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| SI3424CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3440ADV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3417DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI3443CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3443CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SC74; TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI3440DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| Si3410DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SI3424CDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| SI3429EDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; ESD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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Мінімальне замовлення: 3000 шт
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| SI3473CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -20A
Power dissipation: 4.2W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| SI3473DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -8A
Pulsed drain current: -30A
Power dissipation: 3.6W
Case: SC74; TSOP6
Gate-source voltage: ±8V
On-state resistance: 38.8mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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Мінімальне замовлення: 3000 шт
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| CRCW12103K30FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
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| CRCW12103K30FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 3.3kΩ; SMD; 1210; 500mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 3.3kΩ
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Power: 0.5W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x2.5x0.55mm
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| CRCW08051K91FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; 1.91kΩ; SMD; 0805; 0.125W; ±1%; 150V
Type of resistor: thick film
Resistance: 1.91kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
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Мінімальне замовлення: 100 шт
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| VS-EPH6007L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
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| VS-C4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
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| VS-A5PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
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| VS-A5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
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| VS-C4PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
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| VS-C5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
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| VS-E4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
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| VS-E4PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
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| VS-E5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
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Мінімальне замовлення: 500 шт
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| MBE04140C6800FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Length: 11.9mm
Tolerance: ±1%
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Length: 11.9mm
Tolerance: ±1%
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.89 грн |
| 19+ | 22.40 грн |
| 25+ | 18.83 грн |
| 50+ | 16.37 грн |
| 100+ | 14.34 грн |
| 250+ | 12.13 грн |
| 500+ | 10.86 грн |
| IRF9620STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
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Мінімальне замовлення: 800 шт
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