| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-EPH6007L-N3 | VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 650V Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 520A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2.2V Reverse recovery time: 65ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-A5PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-A5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.7V Reverse recovery time: 54ns Application: automotive industry Max. load current: 120A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.24kA Case: TO247AD-3 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 55ns Application: automotive industry Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-C5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Max. forward impulse current: 330A Case: TO247AD-3 Kind of package: tube Max. forward voltage: 1.6V Reverse recovery time: 46ns Application: automotive industry Max. load current: 60A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E4PH6006L-N3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E4PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 425A Case: TO247AD-2 Kind of package: tube Max. forward voltage: 2V Reverse recovery time: 68ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VS-E5PH6006LHN3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 60A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 0.5kA Case: TO247AD Max. forward voltage: 1.7V Reverse recovery time: 29ns |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||||
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MBE04140C6800FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C Length: 11.9mm Tolerance: ±1% Diameter: 4.2mm Type of resistor: metal film Mounting: THT Operating temperature: -55...155°C Resistance: 680Ω Leads: axial Body dimensions: Ø4.2x11.9mm Power: 1W Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.8x31mm Operating voltage: 500V |
на замовлення 657 шт: термін постачання 14-30 дні (днів) |
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IRF9620STRLPBF | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W Case: D2PAK; TO263 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Drain-source voltage: -200V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 1.5Ω Pulsed drain current: -14A Power dissipation: 40W Polarisation: unipolar Drain current: -2A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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VS-26MT40 | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 25A Max. forward impulse current: 360A Electrical mounting: THT Version: square Max. forward voltage: 1.26V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: D-63 Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| VS-200MT40KPBF | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA Type of bridge rectifier: three-phase Max. off-state voltage: 0.4kV Load current: 200A Max. forward impulse current: 1.8kA Electrical mounting: screw Version: module Max. forward voltage: 1.4V Leads: M5 screws Case: MTK Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIZF928DT-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 150...400A Case: PowerPAIR® 6x5 Gate-source voltage: -12...16V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Semiconductor structure: asymmetric |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | |||||||||||||||
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SIHP11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
на замовлення 145 шт: термін постачання 14-30 дні (днів) |
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SIHA11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHA11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHB11N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHB11N80AE-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 391mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 22A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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SIHB11N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHD11N80AE-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 391mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
| SIHG11N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Power dissipation: 78W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 42nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIHG11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIHP11N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 88nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHB15N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 29A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Pulsed drain current: 29A Gate charge: 53nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHA15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 29A Gate charge: 53nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SIHA15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| SIHG15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 53nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIHG15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIHP15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 304mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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SIHP15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CRCW120649K9FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 49.9kΩ; SMD; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 49.9kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Roll diameter max.: 180mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Body dimensions: 3.2x1.6x0.55mm |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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VS-MBRB1535CT-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Kind of package: tube Manufacturer standard package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-MBRB1535CTL-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-MBRB1535CTR-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.57V Kind of package: 13 inch reel Manufacturer standard package: 800pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RCC04020000Z0ED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0Ω; SMD; 0402; 125mW; RCC; 1x0.5x0.35mm Type of resistor: thick film Resistance: 0Ω Mounting: SMD Case - inch: 0402 Case - mm: 1005 Power: 0.125W Manufacturer series: RCC Max. operating voltage: 75V Body dimensions: 1x0.5x0.35mm Operating temperature: -55...155°C Temperature coefficient: 0ppm/°C Conform to the norm: AEC-Q200 |
на замовлення 80000 шт: термін постачання 14-30 дні (днів) |
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MAL214097012E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; 3000h; 120mΩ Type of capacitor: electrolytic Mounting: SMD Capacitance: 330µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...125°C Service life: 3000h Impedance: 0.12Ω Conform to the norm: AEC-Q200 |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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CMB02070X1601FB200 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm Type of resistor: carbon film Resistance: 1.6kΩ Mounting: SMD Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±1% Operating voltage: 500V Operating temperature: -55...125°C Case: MELF Conform to the norm: AEC-Q200 Diameter: 2.2mm Length: 5.8mm Body dimensions: Ø2.2x5.8mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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CMB02070X1601FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm Type of resistor: carbon film Resistance: 1.6kΩ Mounting: SMD Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±1% Operating voltage: 500V Operating temperature: -55...125°C Case: MELF Conform to the norm: AEC-Q200 Diameter: 2.2mm Length: 5.8mm Body dimensions: Ø2.2x5.8mm Roll diameter max.: 330mm |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||
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CMB02070X1601GB200 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±2%; 500V; L: 5.8mm Type of resistor: carbon film Resistance: 1.6kΩ Mounting: SMD Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±2% Operating voltage: 500V Operating temperature: -55...125°C Case: MELF Conform to the norm: AEC-Q200 Diameter: 2.2mm Length: 5.8mm Body dimensions: Ø2.2x5.8mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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CMB02070X1601GB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±2%; 500V; L: 5.8mm Type of resistor: carbon film Resistance: 1.6kΩ Mounting: SMD Case - inch: 0207 Case - mm: 6123 Power: 1W Tolerance: ±2% Operating voltage: 500V Operating temperature: -55...125°C Case: MELF Conform to the norm: AEC-Q200 Diameter: 2.2mm Length: 5.8mm Body dimensions: Ø2.2x5.8mm Roll diameter max.: 330mm |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||||
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MMB02070C1601FB200 | VISHAY |
Category: SMD resistors Description: Resistor: metal film; 1.6kΩ; SMD; 1W; ±1%; 350V; Ø2.2x5.8mm Type of resistor: metal film Resistance: 1.6kΩ Mounting: SMD Power: 1W Tolerance: ±1% Operating voltage: 350V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Quantity in set/package: 2000pcs. Body dimensions: Ø2.2x5.8mm Roll diameter max.: 180mm |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
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RCA1206270KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 270kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Resistance: 270kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW1206270KJNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 270kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 270kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Temperature coefficient: 200ppm/°C Roll diameter max.: 180mm Body dimensions: 3.2x1.6x0.55mm Conform to the norm: AEC-Q200 Quantity in set/package: 5000pcs. Mounting: SMD Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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CRCW1206270KJNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 270kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Resistance: 270kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating voltage: 200V Mounting: SMD Operating temperature: -55...155°C |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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S3D-E3/57T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 2.5us; DO214AB,SMC; Ufmax: 1.15V Mounting: SMD Features of semiconductor devices: glass passivated Max. off-state voltage: 200V Load current: 3A Kind of package: 7 inch reel Semiconductor structure: single diode Leakage current: 0.25mA Case: DO214AB; SMC Capacitance: 60pF Type of diode: rectifying Reverse recovery time: 2.5µs Max. forward impulse current: 100A Manufacturer standard package: 850pcs. Max. forward voltage: 1.15V |
на замовлення 624 шт: термін постачання 14-30 дні (днів) |
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ESH3D-E3/9AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB,SMC; Ufmax: 0.9V Mounting: SMD Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 200V Load current: 3A Kind of package: 13 inch reel Semiconductor structure: single diode Case: DO214AB; SMC Type of diode: rectifying Reverse recovery time: 25ns Max. forward impulse current: 125A Manufacturer standard package: 3500pcs. Max. forward voltage: 0.9V |
на замовлення 2715 шт: термін постачання 14-30 дні (днів) |
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| VS-EPH6007L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 60A; Ifsm: 520A; TO247AD-2; tube; 65ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 520A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2.2V
Reverse recovery time: 65ns
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В кошику
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| VS-C4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Max. load current: 60A
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В кошику
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| VS-A5PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Max. load current: 120A
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В кошику
од. на суму грн.
| VS-A5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD-3; tube; 54ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.7V
Reverse recovery time: 54ns
Application: automotive industry
Max. load current: 120A
товару немає в наявності
В кошику
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| VS-C4PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 240A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.24kA
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 55ns
Application: automotive industry
Max. load current: 60A
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| VS-C5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 330A; TO247AD-3; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 330A
Case: TO247AD-3
Kind of package: tube
Max. forward voltage: 1.6V
Reverse recovery time: 46ns
Application: automotive industry
Max. load current: 60A
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| VS-E4PH6006L-N3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
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| VS-E4PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 425A; TO247AD-2; tube; 68ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 425A
Case: TO247AD-2
Kind of package: tube
Max. forward voltage: 2V
Reverse recovery time: 68ns
Application: automotive industry
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| VS-E5PH6006LHN3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; Ifsm: 500A; TO247AD; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 0.5kA
Case: TO247AD
Max. forward voltage: 1.7V
Reverse recovery time: 29ns
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| MBE04140C6800FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Length: 11.9mm
Tolerance: ±1%
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
Category: THT Resistors
Description: Resistor: metal film; 680Ω; THT; 1W; ±1%; 500V; Ø0.8x31mm; -55÷155°C
Length: 11.9mm
Tolerance: ±1%
Diameter: 4.2mm
Type of resistor: metal film
Mounting: THT
Operating temperature: -55...155°C
Resistance: 680Ω
Leads: axial
Body dimensions: Ø4.2x11.9mm
Power: 1W
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.8x31mm
Operating voltage: 500V
на замовлення 657 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 31.89 грн |
| 19+ | 22.40 грн |
| 25+ | 18.83 грн |
| 50+ | 16.37 грн |
| 100+ | 14.34 грн |
| 250+ | 12.13 грн |
| 500+ | 10.86 грн |
| IRF9620STRLPBF |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2A; Idm: -14A; 40W
Case: D2PAK; TO263
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: -200V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Pulsed drain current: -14A
Power dissipation: 40W
Polarisation: unipolar
Drain current: -2A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| VS-26MT40 |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 360A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.26V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 25A; Ifsm: 360A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 25A
Max. forward impulse current: 360A
Electrical mounting: THT
Version: square
Max. forward voltage: 1.26V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: D-63
Kind of package: bulk
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| VS-200MT40KPBF |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 200A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.4V
Leads: M5 screws
Case: MTK
Kind of package: bulk
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 400V; If: 200A; Ifsm: 1.8kA
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.4kV
Load current: 200A
Max. forward impulse current: 1.8kA
Electrical mounting: screw
Version: module
Max. forward voltage: 1.4V
Leads: M5 screws
Case: MTK
Kind of package: bulk
Mechanical mounting: screw
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| SIZF928DT-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 150...400A
Case: PowerPAIR® 6x5
Gate-source voltage: -12...16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 150÷400A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 150...400A
Case: PowerPAIR® 6x5
Gate-source voltage: -12...16V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| SIHP11N80AE-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
на замовлення 145 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 179.99 грн |
| 10+ | 108.60 грн |
| 50+ | 94.17 грн |
| SIHA11N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
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| SIHA11N80E-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
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| SIHB11N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
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| SIHB11N80AE-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| SIHB11N80E-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
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| SIHD11N80AE-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 391mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SIHG11N80AE-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 22A; 78W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 78W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 42nC
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В кошику
од. на суму грн.
| SIHG11N80E-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
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од. на суму грн.
| SIHP11N80E-GE3 |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 179W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 440mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 32A
Gate charge: 88nC
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В кошику
од. на суму грн.
| SIHB15N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 29A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 29A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIHA15N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
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В кошику
од. на суму грн.
| SIHA15N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
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В кошику
од. на суму грн.
| SIHG15N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 53nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 53nC
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од. на суму грн.
| SIHG15N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
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од. на суму грн.
| SIHP15N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 304mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 13A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 304mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SIHP15N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
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| CRCW120649K9FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 49.9kΩ; SMD; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 49.9kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 49.9kΩ; SMD; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 49.9kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Roll diameter max.: 180mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Body dimensions: 3.2x1.6x0.55mm
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| VS-MBRB1535CT-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: tube
Manufacturer standard package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: tube
Manufacturer standard package: 50pcs.
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| VS-MBRB1535CTL-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
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| VS-MBRB1535CTR-M3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 35V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.57V
Kind of package: 13 inch reel
Manufacturer standard package: 800pcs.
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| RCC04020000Z0ED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0402; 125mW; RCC; 1x0.5x0.35mm
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Power: 0.125W
Manufacturer series: RCC
Max. operating voltage: 75V
Body dimensions: 1x0.5x0.35mm
Operating temperature: -55...155°C
Temperature coefficient: 0ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0Ω; SMD; 0402; 125mW; RCC; 1x0.5x0.35mm
Type of resistor: thick film
Resistance: 0Ω
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Power: 0.125W
Manufacturer series: RCC
Max. operating voltage: 75V
Body dimensions: 1x0.5x0.35mm
Operating temperature: -55...155°C
Temperature coefficient: 0ppm/°C
Conform to the norm: AEC-Q200
на замовлення 80000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20000+ | 0.61 грн |
| MAL214097012E3 |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; 3000h; 120mΩ
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Service life: 3000h
Impedance: 0.12Ω
Conform to the norm: AEC-Q200
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 330uF; 35VDC; ±20%; 3000h; 120mΩ
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 330µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...125°C
Service life: 3000h
Impedance: 0.12Ω
Conform to the norm: AEC-Q200
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 86.80 грн |
| CMB02070X1601FB200 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| CMB02070X1601FB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±1%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±1%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 330mm
товару немає в наявності
Мінімальне замовлення: 7000 шт
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| CMB02070X1601GB200 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CMB02070X1601GB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 330mm
Category: SMD resistors
Description: Resistor: carbon film; 1.6kΩ; SMD; MELF; 0207; 1W; ±2%; 500V; L: 5.8mm
Type of resistor: carbon film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 0207
Case - mm: 6123
Power: 1W
Tolerance: ±2%
Operating voltage: 500V
Operating temperature: -55...125°C
Case: MELF
Conform to the norm: AEC-Q200
Diameter: 2.2mm
Length: 5.8mm
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 330mm
товару немає в наявності
Мінімальне замовлення: 7000 шт
В кошику
од. на суму грн.
| MMB02070C1601FB200 |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal film; 1.6kΩ; SMD; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: metal film
Resistance: 1.6kΩ
Mounting: SMD
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 2000pcs.
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: metal film; 1.6kΩ; SMD; 1W; ±1%; 350V; Ø2.2x5.8mm
Type of resistor: metal film
Resistance: 1.6kΩ
Mounting: SMD
Power: 1W
Tolerance: ±1%
Operating voltage: 350V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Quantity in set/package: 2000pcs.
Body dimensions: Ø2.2x5.8mm
Roll diameter max.: 180mm
товару немає в наявності
Мінімальне замовлення: 2000 шт
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од. на суму грн.
| RCA1206270KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 270kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 270kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 270kΩ; 1206; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 270kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| CRCW1206270KJNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 270kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 270kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Temperature coefficient: 200ppm/°C
Roll diameter max.: 180mm
Body dimensions: 3.2x1.6x0.55mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 270kΩ; SMD; 1206; 250mW; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 270kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Temperature coefficient: 200ppm/°C
Roll diameter max.: 180mm
Body dimensions: 3.2x1.6x0.55mm
Conform to the norm: AEC-Q200
Quantity in set/package: 5000pcs.
Mounting: SMD
Operating temperature: -55...155°C
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CRCW1206270KJNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 270kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 270kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 270kΩ; SMD; 1206; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Resistance: 270kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Mounting: SMD
Operating temperature: -55...155°C
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| S3D-E3/57T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 2.5us; DO214AB,SMC; Ufmax: 1.15V
Mounting: SMD
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 0.25mA
Case: DO214AB; SMC
Capacitance: 60pF
Type of diode: rectifying
Reverse recovery time: 2.5µs
Max. forward impulse current: 100A
Manufacturer standard package: 850pcs.
Max. forward voltage: 1.15V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 2.5us; DO214AB,SMC; Ufmax: 1.15V
Mounting: SMD
Features of semiconductor devices: glass passivated
Max. off-state voltage: 200V
Load current: 3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 0.25mA
Case: DO214AB; SMC
Capacitance: 60pF
Type of diode: rectifying
Reverse recovery time: 2.5µs
Max. forward impulse current: 100A
Manufacturer standard package: 850pcs.
Max. forward voltage: 1.15V
на замовлення 624 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.41 грн |
| 23+ | 19.17 грн |
| 25+ | 17.05 грн |
| 100+ | 12.22 грн |
| 500+ | 9.93 грн |
| ESH3D-E3/9AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB,SMC; Ufmax: 0.9V
Mounting: SMD
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO214AB; SMC
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward impulse current: 125A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.9V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 25ns; DO214AB,SMC; Ufmax: 0.9V
Mounting: SMD
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 200V
Load current: 3A
Kind of package: 13 inch reel
Semiconductor structure: single diode
Case: DO214AB; SMC
Type of diode: rectifying
Reverse recovery time: 25ns
Max. forward impulse current: 125A
Manufacturer standard package: 3500pcs.
Max. forward voltage: 0.9V
на замовлення 2715 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.17 грн |
| 11+ | 38.69 грн |
| 25+ | 33.94 грн |
| 100+ | 32.58 грн |